arXiv subjects

Amirari Diego

Publications and source records attributed to Amirari Diego.

3 recordsLinked to original sources

arXiv2023

Utilization of Additive Manufacturing for the Rapid Prototyping of C-Band RF Loads

Additive manufacturing is a versatile technique that shows promise in providing quick and dynamic manufacturing for complex engineering problems. Research has been ongoing into the use of additive manufacturing for potential applications in radiofrequency (RF) component technologies. Here we present a method for developing an effective prototype load produced out of 316L stainless steel on a direct metal laser sintering machine. The model was tested within simulation software to verify the validity of the design. The load structure was manufactured utilizing an online digital manufacturing company, showing the viability of using easily accessible tools to manufacture RF structures. The produced load was able to produce an S$_{11}$ value of -22.8 dB at the C-band frequency of 5.712 GHz while under vacuum. In a high power test, the load was able to terminate a peak power of 8.1 MW. Discussion includes future applications of the present research and how it will help to improve the implementation of future accelerator concepts.

physics.acc-ph↗

arXiv2023

Electronic transport mechanisms in a thin crystal of the Kitaev candidate $α$-RuCl$_3$ probed through guarded high impedance measurements

$α$-RuCl$_3$ is considered to be the top candidate material for the experimental realization of the celebrated Kitaev model. It is however known that additional interactions beyond the Kitaev model trigger in $α$-RuCl$_3$, a long-range zigzag antiferromagnetic ground state. In this work, we investigate a nanoflake of $α$-RuCl$_3$ through guarded high impedance measurements aimed at reaching through electronic transport, the regime where the system turns into a zigzag antiferromagnet. We investigated a variety of temperatures (\SI{1.45}{\kelvin} - \SI{175}{\kelvin}) and out-of-plane magnetic fields ranging up to \SI{11}{\tesla}. We found a clear signature of a structural phase transition at $\approx 160$\,K as reported for thin crystals of $α$-RuCl$_3$, as well as a thermally activated behavior at temperatures above $\approx 30$\,K with a characteristic activation energy significantly smaller than the energy gap that we observe for $α$-RuCl$_3$ bulk crystals through our Angle Resolved Photoemission Spectroscopy (ARPES) experiments. Additionally we found that below $\approx 30$\,K, transport is ruled by Efros-Shklovskii (ES) VRH. These observations point to the presence of Coulomb impurities in our thin crystals. Most importantly, our data shows that below the magnetic ordering transition known for bulk $α$-RuCl$_3$ ($\approx 7$\,K), there is a clear deviation from VRH or thermal activation transport mechanisms. Our work demonstrates the possibility of reaching through specialized high impedance measurements, the thrilling ground states predicted for $α$-RuCl$_3$ at low temperatures in the frame of the Kitaev model, and informs about the transport mechanisms in this material in a wide temperature range as well as on important characteristic quantities such as the localization length of the impurities in a thin $α$-RuCl$_3$ crystal.

cond-mat.str-el↗

arXiv2020

Competition between magnetic order and charge localization in Na$_2$IrO$_3$ thin crystal devices

Spin orbit assisted Mott insulators such as sodium iridate (Na$_2$IrO$_3$) have been an important subject of study in the recent years. In these materials, the interplay of electronic correlations, spin-orbit coupling, crystal field effects and a honeycomb arrangement of ions bring exciting ground states, predicted in the frame of the Kitaev model. The insulating character of Na$_2$IrO$_3$ has hampered its integration to an electronic device, desirable for applications, such as the manipulation of quasiparticles interesting for topological quantum computing. Here we show through electronic transport measurements supported by Angle Resolved Photoemission Spectroscopy (ARPES) experiments, that electronic transport in Na$_2$IrO$_3$ is ruled by variable range hopping and it is strongly dependent on the magnetic ordering transition known for bulk Na$_2$IrO$_3$, as well as on external electric fields. Electronic transport measurements allow us to deduce a value for the localization length and the density of states in our Na$_2$IrO$_3$ thin crystals devices, offering an alternative approach to study insulating layered materials.

cond-mat.mes-hall↗