arXiv subjects

Amirehsan Boreiri

Publications and source records attributed to Amirehsan Boreiri.

3 recordsLinked to original sources

arXiv2026

Optically Active Single Hole Spin in ZnSe

Semiconductor hole spins offer a pathway to extended coherence times by decoupling from nuclear magnetic noise, while their spin-orbit coupling enables fast all-electrical control. In ZnSe, however, realizing this potential has been limited by p-doping challenges. Here, we circumvent this limit by optically activating acceptors within the ZnSe quantum well. We isolate a single-hole spin bound to a shallow acceptor, confirmed by antibunching and accessed via the fast (244 ps) radiative recombination of a bound exciton. Magnetic and Raman spectroscopy of the ground state reveal an effective hole g-factor of 0.7 and an optical resonance linewidth of 26.7 GHz. Complementary first-principles simulations, together with the experimental results, provide evidence that points toward nitrogen as the most likely acceptor impurity. These results introduce a promising new platform for optically active spin qubits and single-photon sources in ZnSe.

quant-ph↗

arXiv2026

Electrical Control of Optically Active Single Spin Qubits in ZnSe

Electrons bound to shallow donors in ZnSe quantum wells are promising candidates for optically addressable spin qubits and single-photon sources. However, their optical coherence and indistinguishability are often limited by spectral broadening arising from charge fluctuations in the local environment. Here, we report electrical control of single donor qubits in ZnSe quantum wells. The applied field induces a DC Stark shift that tunes the emission energy over a range exceeding 30 times the inhomogeneous linewidth, effectively compensating for emitter-to-emitter variations. Concurrently, the field stabilizes trap occupancy, yielding a twofold reduction in optical linewidth and the suppression of spectral wandering. A statistical model based on trap dynamics qualitatively reproduces these observations and elucidates the mechanism of field-assisted charge noise suppression. Our results identify electrical control as a versatile pathway to significantly improve optical and spin addressability.

quant-ph↗

arXiv2025

Bright and Purcell-enhanced single photon emission from a silicon G center

Silicon G centers show significant promise as single photon sources in a scalable silicon platform. But these color centers have large non-radiative decay and a low Debye-Waller factor, limiting their usability in quantum applications. In this work, we demonstrate bright Purcell-enhanced emission from a silicon G center by coupling it to a nanophotonic cavity. The nanobeam cavity enhances the spontaneous emission rate of a single G center by a factor of 6, corresponding to a Purcell factor greater than 31 when accounting for decay into the phonon sideband. We obtain a spontaneous emission rate of 0.97 ns, which is the fastest single photon emission rate reported in silicon. With this radiative enhancement, we achieve an order of magnitude improvement in emitter brightness compared to previously reported values. These results pave the way for scalable quantum light sources on a silicon photonic chip.

physics.optics↗