arXiv subjects

Amit Agarwal

Publications and source records attributed to Amit Agarwal.

At least 127 records · Page 7Linked to original sources

arXiv2022

A New Framework for Quantum Oblivious Transfer

We present a new template for building oblivious transfer from quantum information that we call the "fixed basis" framework. Our framework departs from prior work (eg., Crepeau and Kilian, FOCS '88) by fixing the correct choice of measurement basis used by each player, except for some hidden trap qubits that are intentionally measured in a conjugate basis. We instantiate this template in the quantum random oracle model (QROM) to obtain simple protocols that implement, with security against malicious adversaries: 1. Non-interactive random-input bit OT in a model where parties share EPR pairs a priori. 2. Two-round random-input bit OT without setup, obtained by showing that the protocol above remains secure even if the (potentially malicious) OT receiver sets up the EPR pairs. 3. Three-round chosen-input string OT from BB84 states without entanglement or setup. This improves upon natural variations of the CK88 template that require at least five rounds. Along the way, we develop technical tools that may be of independent interest. We prove that natural functions like XOR enable seedless randomness extraction from certain quantum sources of entropy. We also use idealized (i.e. extractable and equivocal) bit commitments, which we obtain by proving security of simple and efficient constructions in the QROM.

quant-ph↗

arXiv2022

Large nonsaturating magnetoresistance, weak anti-localization and non-trivial topological states in SrAl$_2$Si$_2$

We explore the electronic and topological properties of single crystal SrAl$_2$Si$_2$ using magnetotransport experiments in conjunction with first-principle calculations. We find that the temperature-dependent resistivity shows a pronounced peak near 50 K. We observe several remarkable features at low temperatures, such as large non-saturating magnetoresistance, Shubnikov-de Haas oscillations and cusp-like magneto-conductivity. The maximum value of magnetoresistance turns out to be 459\% at 2 K and 12 T. The analysis of the cusp-like feature in magneto-conductivity indicates a clear signature of weak anti-localization. Our Hall resistivity measurements confirm the presence of two types of charge carriers in SrAl$_2$Si$_2$, with low carrier density.

cond-mat.str-el↗

arXiv2022

Strongly bound excitons in monolayer MoSi$_2$Z$_4$ (Z = pnictogen)

Reduced dielectric screening in two-dimensional materials enables bound excitons, which modifies their optical absorption and optoelectronic response even at room temperature. Here, we demonstrate the existence of excitons in the bandgap of the monolayer family of the newly discovered synthetic MoSi$_2$Z$_4$ (Z = N, P, and As) series of materials. All three monolayers support several bright and strongly bound excitons with binding energies varying from 1 eV to 1.35 eV for the lowest energy exciton resonances. On increasing the pump fluence, the exciton binding energies get renormalized, leading to a redshift-blueshift crossover. Our study shows that the MoSi$_2$Z$_4$ series of monolayers offer an exciting test-bed for exploring the physics of strongly bound excitons and their non-equilibrium dynamics.

cond-mat.mes-hall↗

arXiv2022

Charge density wave and Weyl Semimetal phase in Y$_2$Ir$_2$O$_7$

The subtle interplay of band topology and symmetry broken phase, induced by electron correlations, has immense contemporary relevance and potentially offers novel physical insights. Here, we demonstrate charge density wave (CDW) in bulk Y$_2$Ir$_2$O$_7$ for T < 10 K, and its transition to the Weyl semimetal (WSM) phase at higher temperatures. The CDW phase is evidenced by a) current induced nonlinear conductivity with negative differential resistance at low temperature, b) low frequency Debye like dielectric relaxation at low temperature with a large dielectric constant, and c) an anomaly in the temperature dependence of the thermal expansion coefficient. The WSM phase at higher temperature is confirmed by the DC and AC transport measurements which show an inductive response at low frequencies. More interestingly, we show that by reducing the crystallite size, the low temperature CDW phase can be eliminated leading to the restoration of the WSM phase.

cond-mat.mes-hall↗

arXiv2022

Nonlinear anomalous Hall effects probe topological phase-transitions in twisted double bilayer graphene

Nonlinear anomalous Hall effect is the Berry curvature dipole induced second-order Hall voltage or temperature difference in response to a longitudinal electric field or temperature gradient. These are the prominent Hall responses in time reversal symmetric systems. Here, we investigate the family of second-order nonlinear anomalous Hall effects, the electrical, thermoelectric and thermal nonlinear Hall effects in the moiré system of twisted double bilayer graphene. We demonstrate that the nonlinear anomalous Hall signals can be used to probe the topological phase-transitions in moiré systems, induced by a perpendicular electric field. Specifically, we show that the whole family of nonlinear anomalous Hall responses undergo a sign reversal across a topological phase-transition.

cond-mat.mes-hall↗

arXiv2022

Tunable interband and intraband plasmons in twisted double bilayer graphene

Flat bands in twisted moire superlattices support a variety of topological and strongly correlated phenomena along with easily tunable electrical and optical properties. Here, we demonstrate the existence of tunable, long-lived, and flat intraband and interband terahertz plasmons in twisted double bilayer graphene. We show that the interband plasmons originate from the presence of a Van Hove singularity in the joint density of states and a finite Berry connection between the pair of bands involved. We find that the gapped interband plasmon mode has a universal dispersion, and the plasmon gap is specified by the location of the Van Hove singularity in the joint density of states. Metallic moire systems support an additional intraband plasmon mode which becomes flat in the large momentum limit because of the influence of the interband correlations. We demonstrate that the undamped and flat plasmon modes in moire systems are highly tunable and can be controlled by varying the vertical electric field and electron doping, and they persist over a wide range of twist angles.

cond-mat.mes-hall↗

arXiv2022

Two-dimensional MoSi2N4: An Excellent 2D Semiconductor for Transistors

We report the performance of field-effect transistors (FETs), comprised of mono-layer of recently synthesized layered two-dimensional MoSi2N_4 as channel material, using the first principles quantum transport simulations. The devices' performance is assessed as per the International Roadmap for Devices and Systems (IRDS) 2020 roadmap for the year 2034 and compared to advanced silicon-based FETs, carbon nanotube-based FETs, and other promising two-dimensional materials based FETs. Finally, we estimate the figure of merits of a combinational and a sequential logic circuit based on our double gate devices and benchmark against promising alternative logic technologies. The performance of our devices and circuits based on them are encouraging, and competitive to other logic alternatives.

cond-mat.mes-hall↗

arXiv2022

Nonlinear magnetoconductivity in Weyl and multi-Weyl semimetal in quantizing magnetic field

Magnetotransport and magneto-optics experiments offer a very powerful probe for studying the physical properties of materials. Here, we investigate the second-order nonlinear magnetoconductivity of tilted type-I Weyl and multi-Weyl semimetal. In contrast to the presence of chiral anomaly in the linear response regime, we show that Weyl semimetal do not host chiral charge pumping in the nonlinear transport regime. We predict that an inversion symmetry broken and tilted Weyl semimetal can support finite longitudinal nonlinear magnetoconductivity, which is otherwise absent in untilted Weyl semimetal. The nonlinear magnetoconductivity vanishes in the ultra-quantum limit, oscillates in the intermediate magnetic field regime and saturates in the semiclassical limit. The nonlinear magnetoconductivity depends intricately on the tilt orientation, and it can be used to determine the tilt orientation in Weyl and multi-Weyl semimetals, via nonlinear magnetoresistivity or second harmonic generation experiments.

cond-mat.mes-hall↗

arXiv2022

Topological states in superlattices of HgTe-class materials for engineering three-dimensional flat bands

In search of materials with three-dimensional flat band dispersions, using {\em ab-initio} computations, we investigate how topological phases evolve as a function of hydrostatic pressure and uniaxial strain in two types of superlattices: HgTe/CdTe and HgTe/HgSe. In short-period HgTe/CdTe superlattices, our analysis unveils the presence of isoenergetic nodal lines, which could host strain-induced three-dimensional flat bands at the Fermi level without requiring doping, when fabricated, for instance, as core-shell nanowires. In contrast, HgTe/HgSe short-period superlattices are found to harbor a rich phase diagram with a plethora of topological phases. Notably, the unstrained superlattice realizes an ideal Weyl semimetal with Weyl points situated at the Fermi level. A small-gap topological insulator with multiple band inversions can be obtained by tuning the volume: under compressive uniaxial strain, the material transitions sequentially into a Dirac semimetal to a nodal-line semimetal, and finally into a topological insulator with a single band inversion.

cond-mat.mtrl-sci↗

arXiv2022

Berry curvature dipole senses topological transition in a moiré superlattice

Topological aspects of electron wavefunction play a crucial role in determining the physical properties of materials. Berry curvature and Chern number are used to define the topological structure of electronic bands. While Berry curvature and its effects in materials have been studied, detecting changes in the topological invariant, Chern number, is challenging. In this regard, twisted double bilayer graphene (TDBG) has emerged as a promising platform to gain electrical control over the Berry curvature hotspots and the valley Chern numbers of its flat bands. In addition, strain induced breaking of the three-fold rotation (C3) symmetry in TDBG, leads to a non-zero first moment of Berry curvature called the Berry curvature dipole (BCD), which can be sensed using nonlinear Hall (NLH) effect. We reveal, using TDBG, that the BCD detects topological transitions in the bands and changes its sign. In TDBG, the perpendicular electric field tunes the valley Chern number and the BCD simultaneously allowing us a tunable system to probe the physics of topological transitions. Furthermore, we find hysteresis of longitudinal and NLH responses with electric field that can be attributed to switching of electric polarization in moiré systems. Such a hysteretic response holds promise for next-generation Berry curvature-based memory devices. Probing topological transitions, as we show, can be emulated in other 3D topological systems.

cond-mat.mes-hall↗

arXiv2022

Magnetically tunable Dirac and Weyl fermions in the Zintl materials family

Recent classification efforts encompassing crystalline symmetries have revealed rich possibilities for solid-state systems to support a tapestry of exotic topological states. However, finding materials that realize such states remains a daunting challenge. Here we show how the interplay of topology, symmetry, and magnetism combined with doping and external electric and magnetic field controls can be used to drive the previously unreported SrIn$_2$As$_2$ materials family into a variety of topological phases. Our first-principles calculations and symmetry analysis reveal that SrIn$_2$As$_2$ is a dual topological insulator with $Z_2=(1;000)$ and mirror Chern number $C_M= -1$. Its isostructural and isovalent antiferromagnetic cousin EuIn$_2$As$_2$ is found to be an axion insulator with $Z_4= 2$. The broken time-reversal symmetry via Eu doping in Sr$_{1-x}$Eu$_x$In$_2$As$_2$ results in a higher-order or topological crystalline insulator state depending on the orientation of the magnetic easy axis. We also find that antiferromagnetic EuIn$_2$P$_2$ is a trivial insulator with $Z_4= 0$, and that it undergoes a magnetic field-driven transition to an ideal Weyl fermion or nodal fermion state with $Z_4= 1$ with applied magnetic field. Our study identifies Sr$_{1-x}$Eu$_x$In$_2$(As, P)$_2$ as a new tunable materials platform for investigating the physics and applications of Weyl and nodal fermions in the scaffolding of crystalline and axion insulator states.

cond-mat.mes-hall↗

arXiv2022

Collective plasmonic modes in the chiral multifold fermionic material CoSi

Plasmonics in topological semimetals offers exciting opportunities for fundamental physics exploration as well as for technological applications. Here, we investigate plasmons in the exemplar chiral crystal CoSi, which hosts a variety of multifold fermionic excitations. We show that CoSi hosts two distinct plasmon modes in the infrared regime at 0.1 eV and 1.1 eV in the long-wavelength limit. The 0.1 eV plasmon is found to be highly dispersive, and originates from intraband collective oscillations associated with a double spin-1 excitation, while the 1.1 eV plasmon is dispersionless and it involves interband correlations. Both plasmon modes lie outside the particle-hole continuum and possess long lifetime. Our study indicates that the CoSi class of materials will provide an interesting materials platform for exploring fundamental and technological aspects of topological plasmonics.

cond-mat.mtrl-sci↗

arXiv2022

Strain-tunable in-plane ferroelectricity and lateral tunnel junction in monolayer group-IV monochalcogenides

2D Ferroelectric materials are promising for designing low-dimensional memory devices. Here, we explore strain tunable ferroelectric properties of group-IV monochalcogenides MX (M=Ge, Sn; X=S, Se) and their potential application in lateral field tunnel junction devices. We find that these monolayers have in-plane ferroelectricity, with their ferroelectric parameters being on par with other known 2D ferroelectric materials. Amongst SnSe, SnS, GeSe, and GeS, we find that GeS has the best ferroelectric parameters for device applications, which can be improved further by applying uniaxial tensile strain. We use the calculated ferroelectric properties of these materials to study the tunneling electroresistance (TER) of a 4 nm device based on lateral ferroelectric tunnel junction. We find a substantial TER ratio $10^3-10^5$ in the devices based on these materials, which can be further improved up to a factor of 40 on the application of tensile strain.

cond-mat.mtrl-sci↗

arXiv2022

Nonlinear magnetotransport in Weyl semimetal

The recent discovery of the quantum nonlinear Hall effect has revived the field of nonlinear transport. Here, we predict magnetic field-induced nonlinear Hall effect in time-reversal symmetric Weyl semimetal. We show that the interplay of the band geometric quantities, such as the Berry curvature, and the magnetic part of the Lorentz force can give rise to finite nonlinear Hall conductivity that is linear in the magnetic field. Such nonlinear Hall conductivity can manifest through nonlinear transport measurement as well as nonlinear optical phenomena like photocurrent and the second harmonic generation.

cond-mat.mes-hall↗

arXiv2021

Realization of an intrinsic, ferromagnetic topological state in MnBi8Te13

The interplay between topology and magnetism is essential for realizing novel topological states including the axion insulator, the magnetic Weyl semimetal, etc. An intrinsically ferromagnetic topological material with only the topological bands at the charge neutrality energy has so far remained elusive. By rationally designing the natural heterostructure consisting of [MnBi2Te4] septuple layers and [Bi2Te3] quintuple layers, we report MnBi8Te13 as the first intrinsic ferromagnetic topological material with clean low-energy band structure. Based on the thermodynamic, transport and neutron diffraction measurements, our data show that despite the adjacent [MnBi2Te4] being 44.1 Å apart, MnBi8Te13 manifests long-range ferromagnetism below 10.5 K with strong coupling between magnetism and charge carriers. Our first-principles calculations and angle-resolved photoemission spectroscopy measurements further demonstrate that MnBi8Te13 is an intrinsic ferromagnetic axion state. Therefore, MnBi8Te13 serves as an ideal system to investigate rich emergent phenomena, including the quantized anomalous Hall effect and quantized topological magnetoelectric effect.

cond-mat.str-el↗

arXiv2021

Tunable spin polarization and electronic structure of bottom-up synthesized MoSi$_2$N$_4$ materials

Manipulation of spin-polarized electronic states of two-dimensional (2D) materials under ambient conditions is necessary for developing new quantum devices with small physical dimensions. Here, we explore spin-dependent electronic structures of ultra-thin films of recently introduced 2D synthetic materials MSi$_2$Z$_4$ (M = Mo or W and Z = N or As) using first-principles modeling. Stacking of MSi$_2$Z$_4$ monolayers is found to generate dynamically stable bilayer and bulk materials with thickness-dependent properties. When spin-orbit coupling (SOC) is included in the computations, MSi$_2$N$_4$ monolayers display indirect bandgaps and large spin-split states at the $K$ and $K'$ symmetry points at the corners of the Brillouin zone with nearly 100\% spin polarization. The spins are locked in opposite directions along an out-of-the-plane direction at $K$ and $K'$, leading to spin-valley coupling effects. As expected, spin polarization is absent in the pristine bilayers due to the presence of inversion symmetry, but it can be induced via an external out-of-plane electric field much like the case of Mo(W)S$_2$ bilayers. A transition from an indirect to a direct bandgap can be driven by replacing N by As in MSi$_2$(N, As)$_4$ monolayers. Our study indicates that the MSi$_2$Z$_4$ materials can provide a viable alternative to the MoS$_2$ class of 2D materials for valleytronics and optoelectronics applications.

cond-mat.mes-hall↗

arXiv2021

Photonic Topological Transitions and Epsilon-Near-Zero Surface Plasmons in Type-II Dirac Semimetal NiTe$_2$

Compared to artificial metamaterials, where nano-fabrication complexities and finite-size inclusions can hamper the desired electromagnetic response, several natural materials like van der Waals crystals hold great promise for designing efficient nanophotonic devices in the optical range. Here, we investigate the unusual optical response of NiTe$_2$, a van der Waals crystal and a type-II Dirac semimetal hosting Lorentz-violating Dirac fermions. By {\it ab~initio~} density functional theory modeling, we show that NiTe$_2$ harbors multiple topological photonic regimes for evanescent waves (such as surface plasmons) across the near-infrared and optical range. By electron energy-loss experiments, we identify surface plasmon resonances near the photonic topological transition points at the epsilon-near-zero (ENZ) frequencies $\approx 0.79$, $1.64$, and $2.22$ eV. Driven by the extreme crystal anisotropy and the presence of Lorentz-violating Dirac fermions, the experimental evidence of ENZ surface plasmon resonances confirm the non-trivial photonic and electronic topology of NiTe$_2$. Our study paves the way for realizing devices for light manipulation at the deep-subwavelength scales based on electronic and photonic topological physics for nanophotonics, optoelectronics, imaging, and biosensing applications.

cond-mat.mtrl-sci↗

arXiv2021

Berry curvature induced nonlinear magnetoresistivity in two dimensional systems

The band geometric properties of quantum materials play an elemental role in the linear and nonlinear transport of electrons. In this paper, we propose that the interplay of the Berry curvature, the orbital magnetic moment and the Lorentz force can induce a finite nonlinear resistivity in two dimensional systems in presence of a perpendicular magnetic field. The induced nonlinear magnetoresistivity scales linearly with the magnetic field and is purely quantum mechanical in origin. This novel transport signature can be used as an additional experimental probe for the geometric quantities in intrinsically time reversal symmetric systems.

cond-mat.mes-hall↗