arXiv subjects

Amitayush Jha Thakur

Publications and source records attributed to Amitayush Jha Thakur.

3 recordsLinked to original sources

arXiv2026

Atomic scale demonstration of ferromagnetism in a single layer FeCl2 on Au(111)

FeCl2 is a promising single-layer material with sizeable magnetic susceptibility and insulating character that can be easily grown by molecular beam epitaxy on various surfaces. In order to include it into the select palette of van der Waals materials used to engineer functional heterostructures, it is necessary to confirm its magnetic and electronic ground states, and understand the influence of the supporting substrate. In this work, we unambiguously demonstrate ferromagnetic ordering in a single-layer FeCl2 on Au(111) by means of spin-polarized scanning tunnelling microscopy. The material features a relatively wide insulating gap of 3.3 eV and a strongly spin-polarized conduction band that emerges at 1.5 eV above the Fermi level. Atomic scale defects with triangular shape play a primary role in the electronic gap and spin density distribution. Specifically, in a region of 1.6 nm around each defect, the conduction band is locally suppressed and the tunnelling magneto-conductance is reduced a factor of four. By tracking the spin-dependent tunnelling conductance as a function of the applied magnetic field, we record atomically resolved hysteresis loops, revealing a soft ferromagnetic ground state with pronounced out-of-plane anisotropy and coercive fields in the range of 15-50 mT.

cond-mat.mtrl-sci↗

arXiv2026

Crystal growth and characterization of the ultra-high temperature substrate $\mathrm{Ta_{1-x}Hf_{x}C_{0.5}}$

Incorporation of $\mathrm{Al_{y}Ga_{1-y}N}$ (AGN) semiconductors into high power electronics offers efficiency improvements in power transmission, generation, and use, if approaches to eliminate the defects arising from film-lattice mismatch can be established. Here, we report the optical floating zone crystal growth of $\mathrm{Ta_{1-x}Hf_{x}C_{0.5}}$ (x = 0.2), a new metallic substrate material family lattice matched to the ultra-wide-band-gap, Al-rich side (y = 0.91) of the AGN solid solution. Laue diffraction demonstrates large single crystal domains in the as-grown boule. Single crystal x-ray diffraction at T = 213 K in conjunction with first principles calculations shows that the material adopts a layered crystal structure with AA-type stacking of (Ta/Hf)-C-(Ta/Hf) trilayers described in the trigonal space group P-3m1 (#164), with a = 3.1168(4) Å, c = 4.9644(4) Å, and $β$ = 120.0°. X-ray photoelectron spectroscopy (XPS) measurements show the Hf:Ta ratio to be close to the nominal value of 0.8:0.2 in the grown crystal. Density Functional Theory calculations reveal that this structure is stabilized by the low energy of carbon-vacancy formation of a hypothetical $\mathrm{(Ta/Hf)_{1}C_{1}}$ anti-NiAs structure type, and imply flexibility in interface structure with an overlayer nitride film. A surface preparation/polishing procedure is developed that reduces root mean square (RMS) surface roughness from as-cut 130 nm to 7 nm as measured by atomic force microscopy. Scanning electron microscopy shows the presence of a native surface oxide, removed by polishing, along with carbon-rich pits. Time-domain thermoreflectance measurements show a room temperature thermal conductivity of $κ$ = 18.1(4) W m-1 K-1. These results provide key first steps for utilizing metallic, lattice matched, substrates for the growth of Al-rich AGN semiconductors.

cond-mat.mtrl-sci↗

arXiv2025

Large Seebeck coefficient driven by "pudding mold" flat band in hole-doped CuRhO$_2$

We report the measurement, using angle-resolved photoemission spectroscopy, of the metallic electronic structure of the hole-doped thermoelectric oxide CuRh$_{0.9}$Mg$_{0.1}$O$_2$. The material is found to have a ``pudding mold'' type band structure, with a nearly flat band edge located near the Fermi level, which is thought to be the origin of the thermoelectric behavior of this material. The experimental data match the density functional theory of the undoped parent compound, simply corrected by a rigid shift of the bands. Transport calculations based on the observed band structure yield a Seebeck coefficient of $\sim 200 \,μ$V/K for the undoped parent material, consistent with experimental measurements. Our results show that CuRhO$_2$ is a textbook example of how pure band-structural effects can result in a large thermoelectric figure of merit, demonstrating that flat band edges in oxides are a realistic route for the efficient conversion of thermal energy.

cond-mat.str-el↗