arXiv subjects

Amos Sharoni

Publications and source records attributed to Amos Sharoni.

15 recordsLinked to original sources

arXiv2025

The spinterface mechanism for the chiral-induced spin selectivity effect: A Critical Perspective

The chiral-induced spin selectivity (CISS) effect, whereby chiral molecules preferentially transmit electrons of one spin orientation, remains one of the most intriguing and debated phenomena at the interface of spintronics, molecular electronics, and quantum materials. Despite extensive experimental observations across diverse platforms - including transport junctions, photoemission, and enantioselective chemistry - a comprehensive theoretical framework is still lacking. In this perspective, we critically examine the spinterface mechanism as a unifying explanation for the CISS effect. The spinterface model, which hypothesizes a feedback interaction between electron motion in chiral molecules and fluctuating surface magnetic moments, is shown to quantitatively reproduce experimental data across various systems and conditions. We contrast it with some existing theoretical models, highlighting key experimental features. Importantly, we also address open questions and criticisms of this model, including the nature of surface magnetism, the role of dissipation, and the applicability of the mechanism to non-helical or electrode-free systems. By offering falsifiable predictions and reconciling theory with experimental raw data, this work aims to sharpen the dialogue surrounding the microscopic origin of CISS and stimulate further experimental and theoretical progress.

cond-mat.mes-hall↗

arXiv2024

Ramp reversal memory in bulk crystals of 1T-TaS2

The ramp reversal memory (RRM) is a non-volatile memory effect previously observed in correlated oxides exhibiting temperature-driven metal-insulator transitions (MITs). In essence, when a system displaying RRM is heated to a specific temperature within the MIT regime - where metallic and insulating domains coexist - and then cooled by reversing the temperature ramp, the resistance increases in the subsequent heating cycle. Crucially, this increase occurs only in the vicinity of the reversal temperature, indicating that the system 'remembers' this temperature. However, this memory is erased in the next heating loop. While such an effect could potentially manifest in various systems, to date, it has only been reported in thin films of correlated transition metal oxides, including VO2, V2O3, and NdNiO3. In this work, we report the observation of RRM in macroscopic crystals of the layered material 1T-TaS2, which undergoes an MIT near 190 K along charge-density wave transitions. Our findings provide compelling evidence that RRM is a general phenomenon, extending beyond the previously studied oxides. Interestingly, the RRM in TaS2 displays significantly different characteristics: it is observed when reversing from cooling to heating (as opposed to heating to cooling), and its magnitude - representing the 'strength' of the memory - is nearly an order of magnitude larger than in correlated oxides. While we discuss potential mechanisms for the RRM in TaS2, a comprehensive first-principles model is still lacking. We hope that this study will prompt further investigation into the underlying mechanisms of ramp reversal memory, enhancing our understanding of this intriguing phenomenon.

cond-mat.str-el↗

arXiv2023

Temperature-dependence of the chirality-induced spin selectivity effect -- experiments and theory

The temperature dependence of the chirality-induced spin selectivity (CISS) effect can be used to discriminate between different theoretical proposals for the mechanism of the CISS effect. Here we briefly review key experimental results and discuss the effect of temperature in different models for the CISS effect. We then focus on the recently suggested spinterface mechanism and describe the different possible effects temperature can have within this model. Finally, we analyze in detail recent experimental results from Qian, et.al., (Nature, 606, 902-908 (2022)) and demonstrate that, opposite to the original interpretation by the authors, these data indicate that the CISS effect increases with decreasing temperature. Finally, we show how the spinterface model can accurately reproduce these experimental results.

cond-mat.mes-hall↗

arXiv2018

Spin-dependent Seebeck effect in non-local spin valve devices

We performed measurements of Py/Cu and Py/Ag lateral spin valves as function of injection current direction and magnitude. Above a 'critical' current, there is an unexpected dependence of spin injection on current direction. Positive currents show higher polarization of spin injection than negative. This implies that in addition to current-induced spin injection, there is a thermally induced injection from a spin-dependent Seebeck effect. A temperature gradient in the Py electrode, caused by Joule heating, is responsible for injecting excess spins into the non-magnetic channel. This effect has important consequences for understanding high-current spin-based devices, such as spin transfer torque devices.

cond-mat.mes-hall↗

arXiv2017

Ramp Reversal Memory and Phase-Boundary Scarring in Transition Metal Oxides

Transition metal oxides (TMOs) are complex electronic systems which exhibit a multitude of collective phenomena. Two archetypal examples are VO2 and NdNiO3, which undergo a metal-insulator phase-transition (MIT), the origin of which is still under debate. Here we report the discovery of a memory effect in both systems, manifest through an increase of resistance at a specific temperature, which is set by reversing the temperature-ramp from heating to cooling during the MIT. The characteristics of this ramp-reversal memory effect do not coincide with any previously reported history or memory effects in manganites, electron-glass or magnetic systems. From a broad range of experimental features, supported by theoretical modelling, we find that the main ingredients for the effect to arise are the spatial phase-separation of metallic and insulating regions during the MIT and the coupling of lattice strain to the local critical temperature of the phase transition. We conclude that the emergent memory effect originates from phase boundaries at the reversal-temperature leaving `scars` in the underlying lattice structure, giving rise to a local increase in the transition temperature. The universality and robustness of the effect shed new light on the MIT in complex oxides.

cond-mat.mtrl-sci↗

arXiv2015

High resolution Hall measurements across the VO2 metal-insulator transition reveal impact of spatial phase separation

Many strongly correlated transition metal oxides exhibit a metal-insulator transition (MIT), the manipulation of which is essential for their application as active device elements. However, such manipulation is hindered by lack of microscopic understanding of mechanisms involved in these transitions. A prototypical example is VO2, where previous studies indicated that the MIT resistance change correlate with changes in carrier density and mobility. We studied the MIT using Hall measurements with unprecedented resolution and accuracy, simultaneously with resistance measurements. Contrast to prior reports, we find that the MIT is not correlated with a change in mobility, but rather, is a macroscopic manifestation of the spatial phase separation which accompanies the MIT. Our results demonstrate that, surprisingly, properties of the nano-scale spatially-separated metallic and semiconducting domains actually retain their bulk properties. This study highlights the importance of taking into account local fluctuations and correlations when interpreting transport measurements in highly correlated systems.

cond-mat.str-el↗

arXiv2014

Resolving transitions in the mesoscale domain configuration in VO$_2$ using laser speckle pattern analysis

The configuration and evolution of coexisting mesoscopic domains with contrasting material properties are critical in creating novel functionality through emergent physical properties. However, current approaches that map the domain structure involve either spatially resolved but protracted scanning probe experiments without real time information on the domain evolution, or time resolved spectroscopic experiments lacking domain-scale spatial resolution. We demonstrate an elegant experimental technique that bridges these local and global methods, giving access to mesoscale information on domain formation and evolution at time scales orders of magnitude faster than current spatially resolved approaches. Our straightforward analysis of laser speckle patterns across the first order phase transition of VO$_2$ can be generalized to other systems with large scale phase separation and has potential as a powerful method with both spatial and temporal resolution to study phase separation in complex materials.

cond-mat.mes-hall↗

arXiv2011

Evidence for a capacitor network near the metal insulator transition in VO2 thin films probed by in-plane impedance spectroscopy

Impedance spectroscopy measurements were performed in high quality Vanadium dioxide (VO2) thin films. This technique allows us investigate the resistive and capacitive contribution to the dielectric response near the metal-insulator transition (MIT). A non ideal RC behavior was found in our films from room temperature up to 334 K. A decrease of the total capacitance was found in this region, possibly due to interface effects. Above the MIT, the system behaves like a metal as expected, and a modified equivalent circuit is necessary to describe the impedance data adequately. Around the MIT, an increase of the total capacitance is observed.

cond-mat.mtrl-sci↗

arXiv2009

Enhanced spin-flip scattering at the surface of copper in lateral spin valves

We performed non-local electrical measurements of a series of Py/Cu lateral spin valve devices with different Cu thicknesses. We show that both the spin diffusion length of Cu and the apparent spin polarization of Py increase with Cu thickness. By fitting the results to a modified spin-diffusion model, we show that the spin diffusion length of Cu is dominated by spin-flip scattering at the surface. In addition, the dependence of spin polarization of Py on Cu thickness is due to a strong spin-flip scattering at the Py/Cu interface.

cond-mat.mtrl-sci↗

arXiv2009

Control of spin injection by direct current in lateral spin valves

The spin injection and accumulation in metallic lateral spin valves with transparent interfaces is studied using d.c. injection current. Unlike a.c.-based techniques, this allows investigating the effects of the direction and magnitude of the injected current. We find that the spin accumulation is reversed by changing the direction of the injected current, whereas its magnitude does not change. The injection mechanism for both current directions is thus perfectly symmetric, leading to the same spin injection efficiency for both spin types. This result is accounted for by a spin-dependent diffusion model. Joule heating increases considerably the local temperature in the spin valves when high current densities are injected ($\sim$80--105 K for 1--2$\times10^{7}$A cm$^{-2}$), strongly affecting the spin accumulation.

cond-mat.mes-hall↗

arXiv2008

Multiple Avalanches Across the Metal-Insulator Transition of Vanadium Oxide Nano-scaled Junctions

The metal insulator transition of nano-scaled $VO_2$ devices is drastically different from the smooth transport curves generally reported. The temperature driven transition occurs through a series of resistance jumps ranging over 2 decades in amplitude, indicating that the transition is caused by avalanches. We find a power law distribution of the jump amplitudes, demonstrating an inherent property of the $VO_2$ films. We report a surprising relation between jump amplitude and device size. A percolation model captures the general transport behavior, but cannot account for the statistical behavior.

cond-mat.mes-hall↗

arXiv2004

Anomalous proximity effect in gold coated (110) $YBa_2Cu_3O_{7-δ}$ films: Penetration of the Andreev bound states

Scanning tunneling spectroscopy of (110) $YBa_2Cu_3O_{7-δ}/Au$ bi-layers reveal a proximity effect markedly different from the conventional one. While proximity-induced mini-gaps rarely appear in the Au layer, the Andreev bound states clearly penetrate into the metal. Zero bias conductance peaks are measured on Au layers thinner than 7 nm with magnitude similar to those detected on the bare superconductor films. The peaks then decay abruptly with Au thickness and disappear above 10 nm. This length is shorter than the normal coherence length and corresponds to the (ballistic) mean free path.

cond-mat.supr-con↗

arXiv2003

Manifestation of the Verwey Transition in the Tunneling Spectra of Magnetite Nanocrystals

Tunneling transport measurements performed on single particles and on arrays of Fe3O4 (magnetite) nanocrystals provide strong evidence for the existence of the Verwey metal-insulator transition at the nanoscale. The resistance measurements on nanocrystal arrays show an abrupt increase of the resistance around 100 K, consistent with the Verwey transition, while the current-voltage characteristics exhibit a sharp transition from an insulator gap to a peak structure around zero bias voltage. The tunneling spectra obtained on isolated particles using a Scanning Tunneling Microscope reveal an insulator-like gap structure in the density of states below the transition temperature that gradually disappeared with increasing temperature, transforming to a small peak structure at the Fermi energy. These data provide insight into the roles played by long- and short-range charge ordering in the Verwey transition.

cond-mat.mes-hall↗

arXiv2003

Proximity Effect in Gold Coated $YBa_2Ca_3O_{7-δ}$ Films Studied by Scanning Tunneling Spectroscopy

Scanning tunneling spectroscopy on gold layers over-coating \textit{c}-axis $YBa_2Ca_3O_{7-δ}$ (YBCO) films reveals proximity induced gap structures. The gap size reduced exponentially with distance from \textit{a}-axis facets, indicating that the proximity effect is primarily due to the (100) YBCO facets. The penetration depth of superconductivity into the gold is $\sim 30$ nm, in good agreement with estimations for the dirty limit. The extrapolated gap at the interface is $\sim 15$ meV, consistent with recent point-contact experiments. The proximity-induced order parameter appears to have predominant \textit{s}-wave symmetry.

cond-mat.supr-con↗

arXiv2001

Tunneling spectroscopy measurement of the superconductor gap parameter of MgB_2

Cryogenic scanning tunneling microscopy and magnetization measurements were used to study the superconducting properties of MgB_2. The magnetization measurements show a sharp superconductor transition onset at T_c = 38.5 K, in agreement with previous works. The tunneling spectra exhibit BCS gap structures, with gap parameters in the range of 5 to 7 meV, yielding a ratio of 2delat/KT_c ~ 3-4. This suggests that MgB_2 is a conventional BCS (s-wave) superconductor, either in the weak-coupling or in the `intermediate-coupling` regime

cond-mat.supr-con↗