arXiv subjects

Amrit De

Publications and source records attributed to Amrit De.

22 records · Page 2Linked to original sources

arXiv2012

Universal set of scalable dynamically corrected gates for quantum error correction with always-on qubit couplings

We construct a universal set of high fidelity quantum gates to be used on a sparse bipartite lattice with always-on Ising couplings. The gates are based on dynamical decoupling sequences using shaped pulses, they protect against low-frequency phase noise, and can be run in parallel on non-neighboring qubits. This makes them suitable for implementing quantum error correction with low-density parity check codes like the surface codes and their finite-rate generalizations. We illustrate the construction by simulating quantum Zeno effect with the $[[4,2,2]]$ toric code on a spin chain.

quant-ph↗

arXiv2011

Suppression of Decoherence and Disentanglement by the Exchange Interaction

Entangled qubit pairs can serve as a quantum memory or as a resource for quantum communication. The utility of such pairs is measured by how long they take to disentangle or decohere. To answer the question of whether qubit-qubit interactions can prolong entanglement, we calculate the dissipative dynamics of a pair of qubits coupled via the exchange interaction in the presence of random telegraph noise and $1/f$ noise. We show that for maximally entangled (Bell) states, the exchange interaction generally suppresses decoherence and disentanglement. This suppression is more apparent for random telegraph noise if the noise is non-Markovian, whereas for $1/f$ noise the exchange interaction should be comparable in magnitude to strongest noise source. The entangled singlet-triplet superposition state of 2 qubits ($ψ_{\pm}$ Bell state) can be protected by the interaction, while for the triplet-triplet state ($ϕ_{\pm}$ Bell state), it is less effective. Thus the former is more suitable for encoding quantum information.

cond-mat.mes-hall↗

arXiv2010

Optical Dielectric Functions of III-V Semiconductors in Wurtzite Phase

Optical properties of semiconductors can exhibit strong polarization dependence due to crystalline anisotropy. A number of recent experiments have shown that the photoluminescence intensity in free standing nanowires is polarization dependent. One contribution to this effect is the anisotropy of the dielectric function due to the fact that most nanowires crystalize in the wurtzite form. While little is known experimentally about the band structures wurtzite phase III-V semiconductors, we have previously predicted the bulk band structure of nine III-V semiconductors in wurtzite phase.Here, we predict the frequency dependent dielectric functions for nine non-Nitride wurtzite phase III-V semiconductors (AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb). Their complex dielectric functions are calculated in the dipole approximation by evaluating the momentum matrix elements on a dense grid of special k-points using empirical pseudopotential wave functions. Corrections to the momentum matrix elements accounting for the missing core states are made using a scaling factor which is determined by using the optical sum rules on the calculated dielectric functions for the zincblende polytypes. The dielectric function is calculated for polarizations perpendicular and parallel to the c-axis of the crystal.

cond-mat.mes-hall↗

arXiv2009

Predicted band structures of III-V semiconductors in wurtzite phase

While non-nitride III-V semiconductors typically have a zincblende structure, they may also form wurtzite crystals under pressure or when grown as nanowhiskers. This makes electronic structure calculation difficult since the band structures of wurtzite III-V semiconductors are poorly characterized. We have calculated the electronic band structure for nine III-V semiconductors in the wurtzite phase using transferable empirical pseudopotentials including spin-orbit coupling. We find that all the materials have direct gaps. Our results differ significantly from earlier {\it ab initio} calculations, and where experimental results are available (InP, InAs and GaAs) our calculated band gaps are in good agreement. We tabulate energies, effective masses, and linear and cubic Dresselhaus zero-field spin-splitting coefficients for the zone-center states. The large zero-field spin-splitting coefficients we find may lead to new functionalities for designing devices that manipulate spin degrees of freedom.

cond-mat.mes-hall↗