SearcharxivSearch

arXiv subjects

An-Ping Li

Publications and source records attributed to An-Ping Li.

At least 19 recordsLinked to original sources

Nanoscale Imaging of Strain-Controlled Altermagnetic Domains in {\alpha}-MnTe

Altermagnets combine compensated magnetic order with momentum-dependent spin splitting, offering a route to spintronic functionality without the stray fields of conventional ferromagnets. Mechanical strain provides a promising means of controlling their N\'eel order, yet the microscopic pathway by which strain reorganizes an altermagnetic texture remains unresolved. Here, we combine scanning nitrogen-vacancy magnetometry with a piezo-driven uniaxial strain cell to directly image the strain-driven evolution of magnetic domains in bulk {\alpha}-MnTe at room temperature. By applying uniaxial stress along the nearest-neighbor Mn-Mn bond direction, we find that compressive strain reorganizes the magnetic texture through domain coalescence, increasing the size of the largest connected domain while reducing the domain-wall density. On sweeping toward tensile strain direction, however, the domain network follows a distinct trajectory from that observed during the compressive sweep. Instead, the large connected regions fragment into a new metastable configuration, producing pronounced hysteresis in the maximum domain size and stray-field distribution. These results identify domain connectivity and topology as key carriers of strain-induced magnetic memory. Our work reveals domain coalescence and hysteretic fragmentation as the microscopic pathway of strain control in {\alpha}-MnTe and establishes a route toward strain-programmable altermagnetic textures and reconfigurable spintronic devices.

cond-mat.mtrl-sci

Revealing Charge Transfer in Defect-Engineered 4H$_\mathrm{b}$-TaS$_2$

We present a comprehensive first-principles investigation of defects in 4$H_b$-TaS$_2$. In this layered transition metal dichalcogenide, charge transfer between alternating Mott-insulating 1T and metallic 1H layers gives rise to exotic quantum phases such as the Kondo effect and topological superconductivity. Motivated by recent defect manipulation in 4$H_b$-TaS$_2$ via STM, we address their microscopic nature and impact on interlayer charge transfer. To this end, we systematically analyze over 90 defects using large-scale density functional theory (DFT) calculations. Our extensive dataset, compiled from STM simulations, defect formation energies, work functions, and charge transfer, establishes a foundational resource for future theoretical and experimental studies on defect engineering in 4$H_b$-TaS$_2$.

cond-mat.mtrl-sci

Deciphering Majorana Zero Modes in Topological Superconductor FeTe0.55Se0.45 with Machine-Learning-Assisted Spectral Deconvolution

Unambiguous identification of Majorana zero modes (MZMs) in topological superconductors (TSCs) remains a challenge due to complex in-gap states that can also produce zero-bias conductance peaks (ZBPs). Here we demonstrate a data-driven workflow that integrates pixel-wise spectral deconvolution with machine-learning (ML) to analyze tunneling spectroscopy from FeTe0.55Se0.45, an intrinsic TSC. Based on the local density of states (LDOS) spectra acquired with a millikelvin scanning tunneling microscope under magnetic fields, each spectrum was decomposed into multiple Lorentzian peaks. The extracted peak parameters were assembled into a structured feature set and subsequently embedded and clustered with unsupervised ML algorithms. ML-based clustering identified distinct classes of LDOS spectra, separating superconductor vortices exhibiting ZBPs consistent with established characteristics of MZMs from vortices displaying ZBP-mimicking features of trivial origin. Furthermore, spatially resolved ZBP distributions differentiate isotropic vortex cores with well-defined ZBPs from vortices that exhibit locally distorted ZBPs. By comparing the ZBP distributions to defect locations measured without magnetic field, we found a correlation between local heterogeneity and the ZBP formation, necessitating the systematic, data-driven analysis to disentangle genuine MZM signatures in TSC. This objective and reproducible workflow advances reliable MZM detection in TSCs, providing a foundation for MZM manipulation towards quantum computation.

cond-mat.supr-con

Automated Construction of Artificial Lattice Structures with Designer Electronic States

Manipulating matter with a scanning tunneling microscope (STM) enables creation of atomically defined artificial structures that host designer quantum states. However, the time-consuming nature of the manipulation process, coupled with the sensitivity of the STM tip, constrains the exploration of diverse configurations and limits the size of designed features. In this study, we present a reinforcement learning (RL)-based framework for creating artificial structures by spatially manipulating carbon monoxide (CO) molecules on a copper substrate using the STM tip. The automated workflow combines molecule detection and manipulation, employing deep learning-based object detection to locate CO molecules and linear assignment algorithms to allocate these molecules to designated target sites. We initially perform molecule maneuvering based on randomized parameter sampling for sample bias, tunneling current setpoint and manipulation speed. This dataset is then structured into an action trajectory used to train an RL agent. The model is subsequently deployed on the STM for real-time fine-tuning of manipulation parameters during structure construction. Our approach incorporates path planning protocols coupled with active drift compensation to enable atomically precise fabrication of structures with significantly reduced human input while realizing larger-scale artificial lattices with desired electronic properties. Using our approach, we demonstrate the automated construction of an extended artificial graphene lattice and confirm the existence of characteristic Dirac point in its electronic structure. Further challenges to RL-based structural assembly scalability are discussed.

cond-mat.mtrl-sci

Nanoscale Modulation of Flat Bands via Controllable Charge-Density-Waves Defects in 4Hb-TaS2

Electron correlation is a main driver of exotic quantum phases and their interplay. The 4Hb-TaS2 system, possessing intrinsic heterostructure of 1T- and 1H-TaS2 monolayers, offers a unique opportunity to control electron correlation by distorting the atomic lattice or tuning interlayer coupling. Here, we investigated intrinsically deformed charge-density-waves (CDW) in the 1T layer of 4Hb-TaS2 to elucidate and control their effects on flat bands using scanning tunneling microscopy and spectroscopy (STM/S) combined with first-principles calculations. We identified two types of CDW defects: Type 1 has structural distortion and locally suppressed flat bands, while Type 2 features an increased flat band filling factor of intact CDW structure. Density functional theory calculations indicate that a sulfur vacancy in the 1T layer distorts the CDW structure and gives rise to a Type 1, whereas a sulfur vacancy in the 1H layer reduces the interlayer charge transfer and lead to a Type 2. Furthermore, we demonstrated creating and erasing individual CDW defects via STM manipulation. Our findings provide a pathway to not only tune flat bands but also selectively manipulate the interaction between CDW, the atomic lattice, and interlayer coupling in strongly correlated systems with atomic precision.

cond-mat.str-el

Defect-induced displacement of topological surface state in quantum magnet MnBi$_2$Te$_4$

The topological magnet MnBi$_2$Te$_4$ (MBT), with gapped topological surface state, is an attractive platform for realizing quantum anomalous Hall and Axion insulator states. However, the experimentally observed surface state gaps fail to meet theoretical predictions, although the exact mechanism behind the gap suppression has been debated. Recent theoretical studies suggest that intrinsic antisite defects push the topological surface state away from the MBT surface, closing its gap and making it less accessible to scanning probe experiments. Here, we report on the local effect of defects on the MBT surface states and demonstrate that high defect concentrations lead to a displacement of the surface states well into the MBT crystal, validating the theorized mechanism. The local and global influence of antisite defects on the topological surface states are studied with samples of varying defect densities by combining scanning tunneling microscopy (STM), angle-resolved photoemission (ARPES), and density functional theory (DFT). Our findings identify a combination of increased defect density and reduced defect spacing as the primary factors underlying the displacement of the surface states and suppression of surface gap, guiding further development of topological quantum materials.

cond-mat.mes-hall

Coexistence of superconductivity and topological band in a van der Waals Sn1-xInxBi2Te4 crystal

The realization of topological surface states and superconductivity within a single material platform is a crucial step toward achieving topologically nontrivial superconductivity. This can be achieved at an interface between a superconductor and a topological insulator, or within a single material that intrinsically hosts both superconductivity and topological surface states. Here we use scanning tunneling microscopy to study Sn1-xInxBi2Te4 crystals. Spectroscopic evidence reveals the coexistence of topological surface states and superconductivity on the same surface of the crystals. The Te-terminated surface exhibits a single U-shaped superconducting gap with a size of up to 311 {\mu}eV, alongside Dirac bands outside the gap. Analysis of the vortex structure and differential conductance suggests weak-coupling s-wave superconductivity. The absence of observed zero modes suggests that shifting the Fermi level closer to the Dirac point of the topological bands is necessary to realize a topological superconducting state.

cond-mat.supr-con

Raman Fingerprints of Phase Transitions and Ferroic Couplings in Van der Waals Material CuCrP$_2$S$_6$

CuCrP$_2$S$_6$ (CCPS), a type-II multiferroic material, exhibits unique phase transitions involving ferroelectric, antiferroelectric, and antiferromagnetic ordering. In this study, we conduct a comprehensive investigation on the intricate phase transitions and their multiferroic couplings in CCPS across a wide temperature range from 4 to 345 K through Raman spectroscopic measurements down to 5 cm$^{-1}$. We first assign the observed Raman modes with the support of theoretical calculations and angle-resolved polarized Raman measurements. We further present clear signatures of phase transitions from analyses of temperature-dependent Raman spectral parameters. Particularly, two low-frequency soft modes are observed at 36.1 cm$^{-1}$ and 70.5 cm$^{-1}$ below 145 K, indicating the antiferroelectric to quasi-antiferroelectric transition. Moreover, phonon modes hardening is observed when the temperature increases from 4 to 65 K, suggesting negative thermal expansion (NTE) and strong magnetoelastic coupling below 65 K. These findings advance the understanding of vdW multiferroic CCPS, paving the way for future design and engineering of multiferroicity in cutting-edge technologies, such as spintronics and quantum devices.

cond-mat.mtrl-sci

Probing Boron Vacancy Defects in hBN via Single Spin Relaxometry

Spin defects in solids offer promising platforms for quantum sensing and memory due to their long coherence times and optical addressability. Here, we integrate a single nitrogen-vacancy (NV) center in diamond with scanning probe microscopy to discover, read out, and spatially map arbitrary spin-based quantum sensors at the nanoscale. Using the boron vacancy ($\mathrm{V}_\mathrm{B}^-$) center in hexagonal boron nitride$\unicode{x2013}$an emerging two-dimensional spin system$\unicode{x2013}$as a model, we detect its electron spin resonance indirectly via changes in the spin relaxation time ($T_1$) of a nearby NV center, eliminating the need for optical excitation or fluorescence detection of the $\mathrm{V}_\mathrm{B}^-$. Cross-relaxation between NV and $\mathrm{V}_\mathrm{B}^-$ ensembles significantly reduces NV $T_1$, enabling quantitative nanoscale mapping of defect densities beyond the optical diffraction limit and clear resolution of hyperfine splitting in isotopically enriched h$^{10}$B$^{15}$N. Our method demonstrates interactions between 3D and 2D spin sensors, establishing NV centers as versatile probes for characterizing otherwise inaccessible spin defects.

cond-mat.mtrl-sci

Shear-resistant topology in quasi one-dimensional van der Waals material Bi$_4$Br$_4$

Bi$_4$Br$_4$ is a prototypical quasi one-dimensional (1D) material in which covalently bonded bismuth bromide chains are arranged in parallel, side-by-side and layer-by-layer, with van der Waals (vdW) gaps in between. So far, two different structures have been reported for this compound, $\alpha$-Bi$_4$Br$_4$ and $\beta$-Bi$_4$Br$_4$ , in both of which neighboring chains are shifted by $\mathbf{b}/2$, i.e., half a unit cell vector in the plane, but which differ in their vertical stacking. While the different layer arrangements are known to result in distinct electronic properties, the effect of possible in-plane shifts between the atomic chains remains an open question. Here, using scanning tunneling microscopy and spectroscopy (STM/STS), we report a new Bi$_4$Br$_4$(001) structure, with a shift of $\mathbf{b}/3$ between neighboring chains in the plane and AB layer stacking. We determine shear strain to be the origin of this new structure, which can readily result in shifts of neighboring atomic chains because of the weak inter-chain bonding. For the observed $b/3$ structure, the (residual) atomic chain shift corresponds to an in-plane shear strain of $\gamma\approx7.5\%$. STS reveals a bulk insulating gap and metallic edge states at surface steps, indicating that the new structure is also a higher-order topological insulator, just like $\alpha$-Bi$_4$Br$_4$, in agreement with density functional theory (DFT) calculations.

cond-mat.mes-hall

Telecom-wavelength Single-photon Emitters in Multi-layer InSe

The development of robust and efficient single photon emitters (SPEs) at telecom wavelengths is critical for advancements in quantum information science. Two-dimensional (2D) materials have recently emerged as promising sources for SPEs, owing to their high photon extraction efficiency, facile coupling to external fields, and seamless integration into photonic circuits. In this study, we demonstrate the creation of SPEs emitting in the 1000 to 1550 nm near-infrared range by coupling 2D indium selenide (InSe) with strain-inducing nanopillar arrays. The emission wavelength exhibits a strong dependence on the number of layers. Hanbury Brown and Twiss experiments conducted at 10 K reveal clear photon antibunching, confirming the single-photon nature of the emissions. Density-functional-theory calculations and scanning-tunneling-microscopy analyses provide insights into the electronic structures and defect states, elucidating the origins of the SPEs. Our findings highlight the potential of multilayer 2D metal monochalcogenides for creating SPEs across a broad spectral range, paving the way for their integration into quantum communication technologies.

physics.optics

Lifshitz Transition and Band Structure Evolution in Alkali Metal Intercalated 1Tprime-MoTe2

In van der Waals materials, coupling between adjacent layers is weak, and consequently interlayer interactions are weakly screened. This opens the possibility to profoundly modify the electronic structure, e.g., by applying electric fields or with adsorbates. Here, we show for the case of the topologically trivial semimetal 1Tprime-MoTe2 that potassium dosing at room temperature significantly transforms its band structure. With a combination of angle-resolved photoemission spectroscopy, scanning tunneling microscopy, x-ray photoemission spectroscopy, and density functional theory we show that i) for small concentrations of K, 1Tprime-MoTe2 undergoes a Lifshitz transition with the electronic structure shifting rigidly, and ii) for larger K concentrations 1Tprime-MoTe2 undergoes significant band structure transformation. Our results demonstrate that the origin of this electronic structure change stems from alkali metal intercalation.

cond-mat.mtrl-sci

Observation of 2D Weyl Fermion States in Epitaxial Bismuthene

A two-dimensional (2D) Weyl semimetal featuring a spin-polarized linear band dispersion and a nodal Fermi surface is a new topological phase of matter. It is a solid-state realization of Weyl fermions in an intrinsic 2D system. The nontrivial topology of 2D Weyl cones guarantees the existence of a new form of topologically protected boundary states, Fermi string edge states. In this work, we report the realization of a 2D Weyl semimetal in monolayer-thick epitaxial bismuthene grown on SnS(Se) substrate. The intrinsic band gap of bismuthene is eliminated by the space-inversion-symmetry-breaking substrate perturbations, resulting in a gapless spin-polarized Weyl band dispersion. The linear dispersion and spin polarization of the Weyl fermion states are observed in our spin and angle-resolved photoemission measurements. In addition, the scanning tunneling microscopy/spectroscopy reveals a pronounced local density of states at the edge, suggesting the existence of Fermi string edge states. These results open the door for the experimental exploration of the exotic properties of Weyl fermion states in reduced dimensions.

cond-mat.mtrl-sci

Interplay between Topological States and Rashba States as Manifested on Surface Steps at Room Temperature

The unique spin texture of quantum states in topological materials underpins many proposed spintronic applications. However, realizations of such great potential are stymied by perturbations, such as temperature and local fields imposed by impurities and defects, that can render a promising quantum state uncontrollable. Here, we report room-temperature observation of interaction between Rashba states and topological surface states, which manifests unique spin textures controllable by layer thickness of thin films. Specifically, we combine scanning tunneling microscopy/spectroscopy with the first-principles theoretical calculation to find the robust Rashba states coexisting with topological surface states along the surface steps with characteristic spin textures in momentum space. The Rashba edge states can be switched off by reducing the thickness of a topological insulator Bi2Se3 to bolster their interaction with the hybridized topological surface states. The study unveils a manipulating mechanism of the spin textures at room temperature, reinforcing the necessity of thin film technology in controlling quantum states.

cond-mat.mes-hall

Taming Atomic Defects for Quantum Functions

Single atoms provide an ideal system for utilizing fundamental quantum functions. Their electrons have well-defined energy levels and spin properties. Even more importantly, for a given isotope -- say, $^{12}$C -- all the atoms are identical. This creates a perfect uniformity that is impossible to achieve in macroscopic-size quantum systems. However, herding individual atoms is a very difficult task that requires trapping them with magnetic or optical means and cooling them down to temperatures in the nanokelvin range. On the other hand, the counterpart of single atoms -- the single defects -- may be as good as atom-based quantum systems if not better. These defects, also referred as quantum defects, possess the favorable energy, spin, and uniformity properties of single atoms and remain in their place without the help of precisely tuned lasers. While the number of usable isotopes is set, the combinations of defects and their host material are practically limitless, giving us the flexibility to create precisely designed and controlled quantum systems. Furthermore, as we tame these defects for the quantum world, we bring about transformative opportunities to the classical world in forms such as ultradense electronic devices and precise manufacturing. In this research insight, we introduce some of our recent work on precisely controlled creation and manipulation of individual defects with a scanning tunneling microscope (STM). We also discuss possible pathways for utilizing these capabilities for the development of novel systems for Quantum Information Science (QIS) applications such as quantum information processing and ultrasensitive sensors.

cond-mat.mes-hall

Anti-site defect-induced disorder in compensated topological magnet MnBi$_{2-x}$Sb$_x$Te$_4$

The gapped Dirac-like surface states of compensated magnetic topological insulator MnBi$_{2-x}$Sb$_x$Te$_4$ (MBST) are a promising host for exotic quantum phenomena such as the quantum anomalous Hall effect and axion insulating states. However, it has become clear that atomic defects undermine the stabilization of such quantum phases as they lead to spatial variations in the surface state gap and doping levels. The large number of possible defect configurations in MBST make studying the influence of individual defects virtually impossible. Here, we present a statistical analysis of the nanoscale effect of defects in MBST with $x=0.64$, by scanning tunneling microscopy/spectroscopy (STM/S). We identify (Bi,Sb)$_{\rm Mn}$ anti-site defects to be the main source of the observed doping fluctuations, leading towards the formation of nanoscale charge puddles and effectively closing the transport gap. Our findings will guide further optimization of this material system via defect engineering, to enable exploitation of its promising properties.

cond-mat.mes-hall