arXiv subjects

Anand Bhattacharya

Publications and source records attributed to Anand Bhattacharya.

At least 19 recordsLinked to original sources

arXiv2026

Gate-tunable electronic properties of epitaxial Bi (111) films using a printable hexagonal boron nitride ionogel

Achieving effective electrostatic control of carrier transport in semimetals remains challenging due to strong screening and multiband effects. We report efficient low voltage top gated control of electronic transport in epitaxial Bi (111) thin films grown on GaAs (111) substrates using a printable hexagonal boron nitride ionogel. Magnetotransport measurements reveal pronounced nonlinear Hall conductivities arising from multiband electron and hole contributions. Remarkably, the application of a small gate voltage (less than 0.4 V in magnitude) leads to a systematic evolution of the low field Hall conductivity slope and the electron-hole compensation point. The response to gate voltage depends upon thickness and temperature. The observed behavior cannot be explained by a conventional Fermi level shift with rigid bands and instead indicates a non rigid band response associated with multiband effects and a gat tunable Rashba spin orbit coupling. Our results establish printable ionogel gating as a powerful approach to tune multiband transport in topological semimetals.

cond-mat.mtrl-sci↗

arXiv2025

Synthesis and transport properties of epitaxial Bi (111) films on GaAs (111) substrates

In recent decades, the growth of ultrathin epitaxial bismuth (Bi) films on various substrates has garnered interest due to their unique electronic properties. We report upon the growth and electrical transport properties of epitaxial Bi (111) films in the thickness range of 5-32 nm deposited directly on GaAs (111) substrates, without a buffer layer. The quality of Bi films is found to depend on conditions for substrate treatment using Ar+ ion-milling and annealing. Substrates milled at low ion beam currents display poor surface reconstruction after annealing, which hinders the growth of high-quality films. In contrast, substrates milled under optimized conditions led to reconstructed surfaces upon annealing, resulting in epitaxial Bi films with predominantly single-domain orientation. Although epitaxial films formed in both cases, transport measurements indicated significantly higher conductivity for films grown on optimally treated substrates. Measurements at low temperatures suggest that the transport properties are dominated by a surface state with high mobility electrons. Magneto-transport measurements suggest that conductivity and mobility improve progressively with increasing film thickness. For the thinnest 5 nm film, a hole-like state emerges, presumably as the electron-like state is gapped out. These results provide a robust methodology for growing high-quality epitaxial Bi films on GaAs (111) and offer insights into their unique transport properties, and our ability to tune them.

cond-mat.mtrl-sci↗

arXiv2025

A15 Phase Ta3Sb Thin Films: Direct Synthesis, Charge Transport and Spin-Orbit Torque

Ta3Sb is one of the A15 compounds that have been predicted to have giant spin Hall conductivities due to the gapped Dirac-like band crossings in their electronic structures. We use co-sputtering to directly synthesize thin films of Ta3Sb and identify a large window of Ta:Sb flux ratio that permits the formation of single-phase A15 structure. These sputtered films have an actual Ta:Sb atomic ratio of 4:1 as determined from Rutherford backscattering spectrometry. Their high resistivity, at the Mott-Ioffe-Regel limit, suggests that the electron mean free path is comparable to interatomic distances. From harmonic Hall and spin-torque ferromagnetic resonance measurements, the intrinsic spin Hall conductivity of thin film Ta3Sb is estimated to be in the range of -526 to -1230 (hbar/e) S/cm at 300 K, lower in magnitude than the predicted value of -1400 (hbar/e) S/cm. First-principles calculations of the electronic structure show that the discrepancy is consistent with an increase of the Fermi level due to the non-ideal stoichiometry needed to stabilize the A15 structure.

cond-mat.mtrl-sci↗

arXiv2025

Uniaxial spin texture in a superconducting electron gas revealed by exchange interactions

Two-dimensional superconductors with spin-textured Fermi surfaces can be a platform for realizing unconventional pairing states and are of substantial interest in the context of quantum information science, and superconducting spintronics/orbitronics. We observed an unusual in-plane uniaxial anisotropy in the superconducting 2D electron gas (2DEG) formed at EuOx/KTaO3 (110) interfaces, where the EuOx is magnetic. This anisotropy is not evident in AlOx/KTaO3 (110) where the overlayer is non-magnetic. Our results are consistent with a highly anisotropic 'half-Rashba' spin-textured Fermi surface in 2DEGs formed at the KTaO3 (110) interface that is hidden from external magnetic fields due to a near cancellation between orbital and spin moments but revealed by exchange interactions of the electrons in the 2DEG with Eu moments near the EuOx/KTaO3 (110) interface. The interactions between the uniaxial spin texture and the magnetic overlayer offer new ways to explore the interplay between magnetism and 2D superconductivity.

cond-mat.supr-con↗

arXiv2024

Revealing subterahertz atomic vibrations in quantum paraelectrics by surface-sensitive spintronic terahertz spectroscopy

Understanding surface collective dynamics in quantum materials is crucial for advancing quantum technologies. For example, surface phonon modes in quantum paraelectrics are thought to play an essential role in facilitating interfacial superconductivity. However, detecting these modes, especially below 1 terahertz (THz), is challenging due to limited sampling volumes and the need for high spectroscopic resolution. Here, we report surface soft transverse optical (TO1) phonon dynamics in KTaO3 and SrTiO3 by developing surface-sensitive spintronic THz spectroscopy that can sense the collective modes only a few nanometers deep from the surface. In KTaO3, the TO1 mode softens and sharpens with decreasing temperature, leveling off at 0.7 THz. In contrast, this mode in SrTiO3 broadens significantly below the quantum paraelectric crossover and coincides with the hardening of a sub-meV phonon mode related to the antiferrodistortive transition. These observations that deviate from their bulk properties may have implications for interfacial superconductivity and ferroelectricity. The developed technique opens opportunities for sensing low-energy surface excitations.

cond-mat.mtrl-sci↗

arXiv2024

Sketched Nanoscale KTaO3-Based Superconducting Quantum Interference Device

The discovery of two-dimensional superconductivity in LaAlO3/KTaO3 (111) and (110) interfaces has raised significant interest in this system. In this manuscript we report the first successful fabrication of a superconducting quantum interference device (DC-SQUID) in the KTO system. The key device elements, superconducting weak links, are created by conductive atomic force microscope (c-AFM) lithography which can reversibly control the conductivity at the LAO/KTO(110) interface with nanoscale resolution. The periodic modulation of the SQUID critical current, Ic(B), with magnetic field corresponds well with our theoretical modeling, which reveals a large kinetic inductance of the superconducting two-dimensional electron gas in KTO. The kinetic inductance of the SQUID is tunable by electrical gating from the back, due to the large dielectric constant of KTO. The demonstration of weak links and SQUIDs in KTO broadens the scope for exploring the underlying physics of KTO superconductivity, including the role of spin-orbit-coupling, pairing symmetry, and inhomogeneity. It also promotes KTO as a versatile platform for a growing family of quantum devices, which could be applicable in the realm of quantum computing and information.

cond-mat.supr-con↗

arXiv2024

Low temperature spin Seebeck effect in non-magnetic vanadium dioxide

The spin Seebeck effect (SSE) is sensitive to thermally driven magnetic excitations in magnetic insulators. Vanadium dioxide in its insulating low temperature phase is expected to lack magnetic degrees of freedom, as vanadium atoms are thought to form singlets upon dimerization of the vanadium chains. Instead, we find a paramagnetic SSE response in VO2 films that grows as the temperature decreases below 50 K. The field and temperature dependent SSE voltage is qualitatively consistent with a general model of paramagnetic SSE response and inconsistent with triplet spin transport. Quantitative estimates find a spin Seebeck coefficient comparable in magnitude to that observed in strongly magnetic materials. The microscopic nature of the magnetic excitations in VO2 requires further examination.

cond-mat.str-el↗

arXiv2024

The challenges of measuring spin Seebeck noise

Just as electronic shot noise in driven conductors results from the granularity of charge and the statistical variation in the arrival times of charge carriers, there are predictions for fundamental noise in magnon currents due to angular momentum being carried by discrete excitations. The inverse spin Hall effect as a transduction mechanism to convert spin current into charge current raises the prospect of experimental investigations of such magnon shot noise. Spin Seebeck effect measurements have demonstrated the electrical detection of thermally driven magnon currents and have been suggested as an avenue for accessing spin current fluctuations. Using spin Seebeck structures made from yttrium iron garnet on gadolinium gallium garnet, we demonstrate the technical challenges inherent in such noise measurements. While there is a small increase in voltage noise in the inverse spin Hall detector at low temperatures associated with adding a magnetic field, the dependence on field orientation implies that this is not due to magnon shot noise. We describe theoretical predictions for the expected magnitude of magnon shot noise, highlighting ambiguities that exist. Further, we show that magnon shot noise detection through the standard inverse spin Hall approach is likely impossible due to geometric factors. Implications for future attempts to measure magnon shot noise are discussed.

cond-mat.mes-hall↗

arXiv2023

DFT+U and Quantum Monte Carlo study of electronic and optical properties of AgNiO$_2$ and AgNi$_{1-x}$Co$_{x}$O$_2$ delafossite

As the only semimetallic $d^{10}$-based delafossite, AgNiO$_2$ has received a great deal of attention due to both its unique semimetallicity and its antiferromagnetism in the NiO$_2$ layer that is coupled with a lattice distortion. In contrast, other delafossites such as AgCoO$_2$ are insulating. Here we study how the electronic structure of AgNi$_{1-x}$Co$_{x}$O$_2$ alloys vary with Ni/Co concentration, in order to investigate the electronic properties and phase stability of the intermetallics. While the electronic and magnetic structure of delafossites have been studied using Density Functional Theory (DFT), earlier studies have not included corrections for strong on-site Coulomb interactions. In order to treat these interactions accurately, in this study we use Quantum Monte Carlo (QMC) simulations to obtain accurate estimates for the electronic and magnetic properties of AgNiO$_2$. By comparison to DFT results we show that these electron correlations are critical to account for. We show that Co doping on the magnetic Ni sites results in a metal-insulator transition near $x\sim 0.33$, and reentrant behavior near $x\sim 0.66$

cond-mat.mtrl-sci↗

arXiv2022

Tunable superconductivity at the oxide-insulator/KTaO$_3$ interface and its origin

Superconductivity forms out of the condensation of Cooper pairs of electrons. The mechanism by which Cooper pairs are created in non-conventional superconductors is often elusive because experimental signatures that connect a specific pairing mechanism to the properties of superconducting state are rare. The recently discovered superconducting oxide-insulator/KTaO$_3$ interface may offer clues about its origins. Here we observe distinct dependences of the superconducting transition temperature Tc on carrier density n$_{2D}$ for electron gases formed at KTaO$_3$ (111), (001) and (110) interfaces. For the KTaO$_3$ (111) interface, a remarkable linear dependence of Tc on n$_{2D}$ is observed over a range of nearly one order of magnitude. Further, our study of the dependence of superconductivity on gate electric fields reveals the role of the interface in mediating superconductivity, which also allows for a reversible electric switching of superconductivity at T = 2 K. We found that the extreme sensitivity of superconductivity to crystallographic orientation can be explained by Cooper pairing via inter-orbital interactions induced by the inversion-breaking transverse optical (TO1) phonons and quantum confinement. This mechanism is also consistent with the dependence of Tc on n$_{2D}$ at the KTaO$_3$ (111) interface. Our study may shed light on the pairing mechanism in other superconducting quantum-paraelectrics.

cond-mat.supr-con↗

arXiv2022

Nanoscale control of the metal-insulator transition at LAO/KTO (110) and LAO/KTO (111) interfaces

Recent reports of superconductivity at KTaO3 (KTO) (110) and (111) interfaces have sparked intense interest due to the relatively high critical temperature as well as other properties that distinguish this system from the more extensively studied SrTiO3 (STO)-based heterostructures. Here we report nanoscale control of the metal-to-insulator transition at the LaAlO3/KTO (110) and (111) interfaces. Devices are created using two distinct methods previously developed for STO-based heterostructures: (1) conductive atomic-force microscopy lithography and (2) ultra-low-voltage electron-beam lithography. At low temperatures, KTO-based devices show superconductivity that is tunable by an applied back gate. A nanowire device shows single-electron-transistor (SET) behavior. These reconfigurable methods of creating nanoscale devices in KTO-based heterostructures offer new avenues for investigating mechanisms of superconductivity as well as development of quantum devices that incorporate strong spin-orbit interactions, superconducting behavior, and nanoscale dimensions.

cond-mat.mes-hall↗

arXiv2020

Anomalous Hall and Nernst Effects in FeRh

Antiferromagnets with tunable phase transitions are promising for future spintronics applications. We investigated spin-dependent transport properties of FeRh thin films, which show a temperature driven antiferromagnetic-to-ferromagnetic phase transition. Epitaxial FeRh films grown on MgO (001) substrates exhibit a clear magnetic and electronic phase transition. By performing anomalous Hall and anomalous Nernst effect measurements over a wide range of temperatures, we demonstrate that the thermally driven transition shows distinctly different transverse transport on both side of the phase transition. Particularly, a sign change of both anomalous Hall and Nernst signals is observed.

cond-mat.mtrl-sci↗

arXiv2020

Molecular beam epitaxy of the magnetic kagome metal FeSn on LaAlO3 (111)

Materials with a layered Kagome lattice are expected to give rise to novel physics arising from band structures with topological properties, spin liquid behavior and the formation of skyrmions. Until now, most work on Kagome materials has been performed on bulk samples due to difficulties in thin film synthesis. Here, by using molecular beam epitaxy, layered Kagome-structured FeSn films are synthesized on (111) oriented LaAlO3 substrate. Both in-situ and ex-situ characterizations indicate these films are highly crystalline and c-axis oriented, with atomically smooth surfaces. However, the films grow as disconnected islands, with lateral dimensions on the micron scale. By patterning Pt electrodes using a focused electron beam, longitudinal and transverse resistance of single islands have been measured in magnetic fields. Our work opens a pathway for exploring mesoscale transport properties in thin films of Kagome materials and related devices.

cond-mat.mtrl-sci↗

arXiv2020

Large anomalous Nernst and inverse spin-Hall effects in epitaxial thin films of Kagome semimetal Mn$_3$Ge

Synthesis of crystallographically well-defined thin films of topological materials is important for unraveling their mesoscale quantum properties and for device applications. Mn$_3$Ge, an antiferromagnetic Weyl semimetal with a chiral magnetic structure on a Kagome lattice, is expected to have enhanced Berry curvature around Weyl nodes near the Fermi energy, leading to large anomalous Hall / Nernst effects and a large spin-Hall effect. Using magnetron sputtering, we have grown epitaxial thin films of hexagonal D0$_{19}$ Mn$_3$Ge that are flat and continuous. Large anomalous Nernst and inverse spin-Hall effects are observed in thermoelectric and spin-pumping devices. The anomalous Nernst signal in our Mn$_3$Ge films is estimated to be 0.1 $μ$V / K, and is comparable to that in ferromagnetic Fe, despite Mn$_3$Ge having a weak magnetization of ~3.5 m$μ_B$ at room temperature. The spin mixing conductance is 90.5 nm$^{-2}$ at the Py / Mn$_3$Ge interface, and the spin-Hall angle in Mn$_3$Ge is estimated to be about 8 times of that in Pt.

cond-mat.mtrl-sci↗

arXiv2020

Voltage control of magnon spin currents in antiferromagnetic Cr2O3

Voltage-controlled spintronic devices utilizing the spin degree of freedom are desirable for future applications, and may allow energy-efficient information processing. Pure spin current can be created by thermal excitations in magnetic systems via the spin Seebeck effect (SSE). However, controlling such spin currents, only by electrical means, has been a fundamental challenge. Here, we investigate voltage control of the SSE in the antiferromagnetic insulator Cr2O3. We demonstrate that the SSE response generated in this material can be effectively controlled by applying a bias voltage, owing to the sensitivity of the SSE to the orientation of the magnetic sublattices as well as the existence of magnetoelectric couplings in Cr2O3. Our experimental results are explained using a model based on the magnetoelectric effect in Cr2O3.

cond-mat.mtrl-sci↗

arXiv2020

Fermi surface topology and non-trivial Berry phase in the flat-band semimetal Pd$_3$Pb

A study of the Fermi surface of the putative topological semimetal Pd$_3$Pb has been carried out using Shubnikov-de Haas (SdH) oscillations measured in fields of up to 60 T. Pd$_3$Pb has garnered attention in the community due to a peculiar Fermi surface that has been proposed theoretically by Ahn, Pickett, and Lee, [Phys. Rev. B 98, 035130 (2018)] to host a dispersion-less band along $X-Γ$ as well as multiple triply-degenerate band crossings that, under the influence of spin-orbit coupling, lead to ten four-fold degenerate Dirac points. Analysis of the SdH oscillation data verifies the calculated multi-sheet Fermi surface, revealing a $Γ$ centered spheroid that had not been resolved experimentally in prior studies. A comprehensive, angle-dependent analysis of the phase of the SdH oscillations convincingly demonstrates a non-trivial Berry phase for two bands along $Γ-R$, supporting the theoretical predictions, while simultaneously evidencing interference between extremal orbits that mimics a trivial Berry phase at intermediate angles.

cond-mat.str-el↗

arXiv2020

Doped NiO: the Mottness of a charge transfer insulator

The evolution of the electronic structures of strongly correlated insulators with doping has long been a central fundamental question in condensed matter physics; it is also of great practical relevance for applications. We have studied the evolution of NiO under hole {\em and} electron doping using high-quality thin film and a wide range of experimental and theoretical methods. The evolution is in both cases very smooth with dopant concentration. The band gap is asymmetric under electron and hole doping, consistent with a charge-transfer insulator picture, and is reduced faster under hole than electron doping. For both electron and hole doping, occupied states are introduced at the top of the valence band. The formation of deep donor levels under electron doping and the inability to pin otherwise empty states near the conduction band edge is indicative that local electron addition and removal energies are dominated by a Mott-like Hubbard $U$-interaction even though the global bandgap is predominantly a charge-transfer type gap.

cond-mat.str-el↗

arXiv2020

Discovery of two-dimensional anisotropic superconductivity at KTaO$_3$ (111) interfaces

The unique electronic structure found at interfaces between materials can allow unconventional quantum states to emerge. Here we observe superconductivity in electron gases formed at interfaces between (111) oriented KTaO$_3$ and insulating overlayers of either EuO or LaAlO$_3$. The superconducting transition temperature, approaching 2.2 K, is about one order of magnitude higher than that of the LaAlO$_3$/SrTiO$_3$ system. Strikingly, similar electron gases at (001) KTaO$_3$ interfaces remain normal down to 25 mK. The critical field and current-voltage measurements indicate that the superconductivity is two dimensional. Higher mobility EuO/KTaO$_3$ (111) samples show a large in-plane anisotropy in transport properties at low temperatures prior to onset of superconductivity, suggesting the emergence of a stripe like phase where the superconductivity is nearly homogeneous in one direction, but strongly modulated in the other.

cond-mat.supr-con↗