arXiv subjects

Anand Santhosh

Publications and source records attributed to Anand Santhosh.

4 recordsLinked to original sources

arXiv2026

Epitaxial Strain Activates Altermagnetic Spin-Splitting Torques in RuO2(100)

The altermagnetic nature of rutile RuO2 remains under active debate: bulk measurements indicate a nearly nonmagnetic ground state, whereas thin-film studies have reported symmetry-dependent transport signatures consistent with altermagnetism. Here, we provide experimental evidence that altermagnetic spin splitting in RuO2 is a strain-stabilized emergent state rather than an intrinsic bulk property. Angular-resolved spin-torque measurements reveal a symmetry-selected spin Hall response characteristic of altermagnetic spin splitting, which is strongest in the strained regime but progressively suppressed as the lattice relaxes toward the bulk limit. Complementary magnetic measurements further reveal enhanced coercivity and exchange-bias behavior exclusively in strained films, indicating the emergence of a strain-stabilized magnetic state. First-principles calculations reproduce the strain-dependent evolution of the Neel order and spin-split electronic structure, supporting the experimental observations. Together, these results establish altermagnetic spin splitting in RuO2 as a strain-stabilized emergent state and provide a unified explanation for the long-standing discrepancy between bulk and thin-film observations.

cond-mat.mtrl-sci↗

arXiv2026

Strain Engineering of Altermagnetic Symmetry in Epitaxial RuO$_2$ Films

The magnetic ground state of RuO$_2$ has been under intense debate. Using first-principles calculations, we show that compressive strain along [001] direction stabilizes an altermagnetic phase in RuO$_2$ thin films grown on (100) and (110) TiO$_2$ substrates. We further identify that compressive strain enhances the density of states near the Fermi level, resulting in a Fermi surface instability and the emergence of altermagnetism. The magnitude of strain and the associated increase in the density of states can be tuned by varying the film thickness, as systematically confirmed by x-ray diffraction and photoemission spectroscopy measurements. Symmetry analysis further reveals that (100) RuO$_2$ hosts an ideal altermagnetic order, whereas broken symmetry in (110) films leads to an uncompensated ferrimagnetic state. Finally, we discuss the effects of Hubbard $U$ parameters and evaluate the realistic tunneling magnetoresistance of (100) RuO$_2$.

cond-mat.mtrl-sci↗

arXiv2026

Emergence of unconventional magnetic order in strain-engineered RuO2/TiO2 superlattices

The spin ordering in RuO2 remains a highly debated topic, owing to its elusive nature, with reports ranging from a nonmagnetic ground state to signatures of unconventional magnetic order. Here we provide the first unambiguous, and direct evidence of unconventional magnetism in epitaxial, fully strained RuO2/TiO2 superlattices on TiO2 (110) substrate grown by hybrid molecular beam epitaxy. Polarized neutron reflectometry reveals a finite magnetic moment localized within the compressively strained RuO2 layers, consistent with predictions obtained from first-principles calculations. Complementary density functional theory and X-ray photoemission spectroscopy show that epitaxial strain drives the Ru 4d states toward the Fermi level, triggering a Stoner-type instability that stabilizes non-compensated magnetic order. These unique results reveal that RuO2 exhibits unconventional magnetic states under epitaxial strain, which are not accessible in bulk and establish strain engineering as a powerful route to uncover and control magnetic phases in RuO2 and related oxides.

cond-mat.mtrl-sci↗

arXiv2025

Strain-Stabilized Interfacial Polarization Tunes Work Function Over 1 eV in RuO2/TiO2 Heterostructures

Interfacial polarization-charge accumulation at the heterointerface-is a well-established tool in semiconductors, but its influence in metals remains unexplored. Here, we demonstrate that interfacial polarization can robustly modulate surface work function in metallic rutile RuO2 layers in epitaxial RuO2/TiO2 heterostructures grown by hybrid molecular beam epitaxy. Using multislice electron ptychography, we directly visualize polar displacements of transition metal ions relative to oxygen octahedra near the interface, despite the conductive nature of RuO2. This interfacial polarization enables over 1 eV modulation of the RuO2 work function, controlled by small thickness variation (2-4 nm) as measured by Kelvin probe probe microscopy, with a critical thickness of 4 nm - corresponding to the transition from fully strained to relaxed film. These results establish interfacial polarization as a powerful route to control electronic properties in metals and have implications for designing tunable electronic, catalytic, and quantum devices through interfacial control in polar metallic systems.

cond-mat.mtrl-sci↗