arXiv subjects

Anantha S. Rao

Publications and source records attributed to Anantha S. Rao.

3 recordsLinked to original sources

arXiv2026

Interacting electrons in silicon quantum interconnects

Coherent interconnects between gate-defined silicon quantum processing units are essential for scalable quantum computation and long-range entanglement. We argue that one-dimensional electron channels formed in the silicon quantum well of a Si/SiGe heterostructure exhibit strong Coulomb interactions and realize strongly interacting Luttinger liquid physics. At low electron densities, the system enters a Wigner regime characterized by dominant 4kF correlations; increasing the electron density leads to a crossover from the Wigner regime to a Friedel regime with dominant 2kF correlations. We support these results through large-scale density matrix renormalization group (DMRG) simulations of the interacting ground state under both screened and unscreened Coulomb potentials. We propose experimental signatures of the Wigner-Friedel crossover via charge transport and charge sensing in both zero- and high-magnetic field limits. We also analyze the impact of short-range correlated disorder - including random alloy fluctuations and valley splitting variations - and identify that the Wigner-Friedel crossover remains robust until disorder levels of about 400 micro eV. Finally, we show that the Wigner regime enables long-range capacitive coupling between quantum dots across the interconnect, suggesting a route to create long-range entanglement between solid-state qubits. Our results position silicon interconnects as a platform for studying Luttinger liquid physics and for enabling architectures supporting nonlocal quantum error correction and quantum simulation.

cond-mat.mes-hall↗

arXiv2025

Towards autonomous time-calibration of large quantum-dot devices: Detection, real-time feedback, and noise spectroscopy

The performance and scalability of semiconductor quantum-dot (QD) qubits are limited by electrostatic drift and charge noise that shift operating points and destabilize qubit parameters. As systems expand to large one- and two-dimensional arrays, manual recalibration becomes impractical, creating a need for autonomous stabilization frameworks. Here, we introduce a method that uses the full network of charge-transition lines in repeatedly acquired double-quantum-dot charge stability diagrams (CSDs) as a multidimensional probe of the local electrostatic environment. By accurately tracking the motion of selected transitions in time, we detect voltage drifts, identify abrupt charge reconfigurations, and apply compensating updates to maintain stable operating conditions. We demonstrate our approach on a 10-QD device, showing robust stabilization and real-time diagnostic access to dot-specific noise processes. The high acquisition rate of radio-frequency reflectometry CSD measurements also enables time-domain noise spectroscopy, allowing the extraction of noise power spectral densities, the identification of two-level fluctuators, and the analysis of spatial noise correlations across the array. From our analysis, we find that the background noise at 100~$μ$\si{\hertz} is dominated by drift with a power law of $1/f^2$, accompanied by a few dominant two-level fluctuators and an average linear correlation length of $(188 \pm 38)$~\si{\nano\meter} in the device. These capabilities form the basis of a scalable, autonomous calibration and characterization module for QD-based quantum processors, providing essential feedback for long-duration, high-fidelity qubit operations.

cond-mat.mes-hall↗

arXiv2025

Modular Autonomous Virtualization System for Two-Dimensional Semiconductor Quantum Dot Arrays

Arrays of gate-defined semiconductor quantum dots are among the leading candidates for building scalable quantum processors. High-fidelity initialization, control, and readout of spin qubit registers require exquisite and targeted control over key Hamiltonian parameters that define the electrostatic environment. However, due to the tight gate pitch, capacitive crosstalk between gates hinders independent tuning of chemical potentials and interdot couplings. While virtual gates offer a practical solution, determining all the required cross-capacitance matrices accurately and efficiently in large quantum dot registers is an open challenge. Here, we establish a modular automated virtualization system (MAViS) -- a general and modular framework for autonomously constructing a complete stack of multilayer virtual gates in real time. Our method employs machine learning techniques to rapidly extract features from two-dimensional charge stability diagrams. We then utilize computer vision and regression models to self-consistently determine all relative capacitive couplings necessary for virtualizing plunger and barrier gates in both low- and high-tunnel-coupling regimes. Using MAViS, we successfully demonstrate accurate virtualization of a dense two-dimensional array comprising ten quantum dots defined in a high-quality Ge/SiGe heterostructure. Our work offers an elegant and practical solution for the efficient control of large-scale semiconductor quantum dot systems.

cond-mat.mes-hall↗