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Ananya Chattaraj

Publications and source records attributed to Ananya Chattaraj.

2 recordsLinked to original sources

Surface Platinum Alloying for Passivation of Oxide Interfaces on Superconducting Niobium Films

Dielectric loss arising from two-level systems (TLS) at surfaces and interfaces remains a primary limitation to coherence in superconducting transmon qubits. Niobium (Nb), a widely used material in superconducting quantum circuits, readily forms native oxides under ambient conditions, leading to lossy dielectric interfaces that degrade device performance. Here, a robust and scalable fabrication strategy is demonstrated for chemically stabilizing Nb surfaces and mitigating further oxidation, including protection of both surface and sidewall regions. High-purity Nb films were fabricated with bulk-like superconducting transition temperatures ($T_c = 9.30\pm0.10$) K. We demonstrate that a thin Pt encapsulation layer, deposited after native oxide formation, can be transformed via thermal annealing into a Nb-Pt alloy at the surface. Spectroscopic and microscopic analyses confirm the formation of a chemically stable metallic alloy layer and its ability to suppress further oxide growth. Ab initio simulations elucidate the atomic-scale rearrangement and electronic structure evolution associated with Pt incorporation on native niobium oxide, providing insight into the stabilization mechanism of the alloyed surface. This approach offers a materials pathway for engineering chemically robust Nb interfaces, including sidewalls, toward higher-coherence superconducting qubit architectures."

cond-mat.supr-con

Phase Formation and Thermal Stability of Superconducting Platinum Silicide Thin Films on Silicon

Platinum silicide (PtSi) thin films are promising for silicon-based superconducting quantum devices due to their compatibility with CMOS fabrication, air stability, and superconducting transition temperature near 1 K. We report a systematic study of PtSi phase formation, microstructure, and interface quality as a function of annealing temperature and duration, characterizing films using grazing-incidence X-ray diffraction, X-ray reflectivity, and electrical transport measurements. Phase-pure PtSi forms within minutes by rapid thermal processing at 600 °C and is stable under extended annealing, while 30 s anneals across 300-600 °C yield equivalent film quality with consistent microstructure and superconducting properties. X-ray reflectivity reveals that interfacial roughening is an intrinsic consequence of the Pt2Si-to-PtSi conversion step rather than a result of elevated temperature or prolonged annealing. These results establish a robust processing window for PtSi formation in silicon-based superconducting device fabrication flows.

cond-mat.supr-con