arXiv subjects

Anastasiya Krysl

Publications and source records attributed to Anastasiya Krysl.

3 recordsLinked to original sources

arXiv2024

8x8 Patch-Antenna-Coupled TeraFET Detector Array for Terahertz Quantum-Cascade-Laser Applications

Monolithically integrated, antenna-coupled field-effect transistors (TeraFETs) are rapid and sensitive detectors for the terahertz range (0.3-10~THz) that can operate at room temperature. We conducted experimental characterizations of a single patch-antenna coupled TeraFET optimized for 3.4~THz operation and its integration into an 8x8 multi-element detector configuration. In this configuration, the entire TeraFET array operates as a unified detector element, combining the output signals of all detector elements. Both detectors were realized using a mature commercial Si-CMOS 65-nm process node. Our experimental characterization employed single-mode Quantum-Cascade Lasers (QCLs) emitting at 2.85~THz and 3.4~THz. The 8x8 multi-element detector yields two major improvements for sensitive power detection experiments. First, the larger detector area simplifies alignment and enhances signal stability. Second, the reduced detector impedance enabled the implementation of a TeraFET+QCL system capable of providing a -3~dB modulation bandwidth up to 21~MHz, which is currently limited primarily by the chosen readout circuitry. Finally, we validate the system's performance by providing high resolution gas spectroscopy data for methanol vapor around 3.4~THz, where a detection limit of 1.6e-5 absorbance, or 2.6e11~molecules/cm^3 was estimated under optimal coupling conditions.

physics.ins-det↗

arXiv2024

Si Superstrate Lenses on Patch-Antenna-Coupled TeraFETs: NEP Optimization and Frequency Fine-Tuning

This paper presents a study on performance optimization and resonant frequency modification of terahertz detectors by the use of hyper-hemispherical silicon superstrate lenses. The detectors are patch-TeraFETs, i.e., field-effect transistors with monolithically integrated patch antennas fabricated with a commercial 65-nm CMOS foundry process and designed for an operation frequency of 580 GHz. We demonstrate a strong improvement of the optical noise-equivalent power optical NEP, referenced against the total radiation power) reaching a value of 16 pW/Hz^(1/2). We show, furthermore, that the resonance frequency can be efficiently fine-tuned by the choice of the material and the thickness of a dielectric layer placed between the transistor and the superstrate lens. The resonance frequency can be shifted by more than 15 % of the center frequency (up to 100 GHz for the 580 GHz devices). The design of the on-chip optics can be employed for post-fabrication tailoring of the detector's resonance frequency to target specific spectral positions.

physics.optics↗

arXiv2024

Modeling of antenna-coupled Si MOSFETs in the Terahertz Frequency Range

We report on the modeling and experimental characterization of Si CMOS detectors of terahertz radiation based on antenna-coupled field-effect transistors (TeraFETs). The detectors are manufactured using TSMC's 65-nm technology. We apply two models -- the TSMC RF foundry model and our own ADS-HDM -- to simulate the Si CMOS TeraFET performance and compare their predictions with respective experimental data. Both models are implemented in the commercial circuit simulation software Keysight Advanced Design System (ADS). We find that the compact model TSMC RF is capable to predict the detector responsivity and its dependence on frequency and gate voltage with good accuracy up to the highest frequency of 1.2 THz covered in this study. This frequency is well beyond the tool's intended operation range for 5G communications and 110-GHz millimeter wave applications. We demonstrate that our self-developed physics-based ADS-HDM tool, which relies on an extended one-dimensional hydrodynamic transport model and can be adapted readily to other material technologies, has high predictive qualities comparable to those of the foundry model. We use the ADS-HDM to discuss the contribution of diffusive and plasmonic effects to the THz response of Si CMOS TeraFETs, finding that these effects, while becoming more significant with rising frequency, are never dominant. Finally, we estimate that the electrical NEP (perfect power coupling conditions) is on the order of 5 pW/$\sqrt{\rm{Hz}}$ at room-temperature.

physics.app-ph↗