arXiv subjects

Anatolijs Sarakovskis

Publications and source records attributed to Anatolijs Sarakovskis.

3 recordsLinked to original sources

arXiv2026

Growth and characterization of GaN/Ga2O3 Nanowire Heterostructures for Ultraviolet Optoelectronics

Ultraviolet-range GaN/b-Ga2O3 heterostructures were fabricated and investigated in both planar and nanowire geometries using pulsed laser deposition and reactive magnetron sputtering from a liquid gallium target for b-Ga2O3 deposition, while both GaN nanowire arrays and planar p-type Mg-doped GaN layers were grown by metal-organic chemical vapor deposition. Precise control of film uniformity and thickness was achieved as confirmed by structural and morphology studies using X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy and scanning electron microscopy. Planar n-Ga2O3/p-GaN heterojunction diodes were electrically and photoelectronically characterized, exhibiting pronounced rectifying behavior, high forward current and a visible-blind ultraviolet photoresponse under zero external bias, demonstrating intrinsic self-powered operation. Furthermore, GaN/b-Ga2O3 core/shell nanowire heterostructures were developed and systematically studied with a focus on morphology control and process optimization. The influence of deposition parameters on shell thickness, uniformity, and tapering was investigated, enabling improved conformality of the b-Ga2O3 coating on the M-plane facets of GaN nanowires. The results highlight the viability of physical vapor deposition techniques for forming GaN/b-Ga2O3 heterostructures and establish a pathway toward nanowire-based ultraviolet optoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2025

Role of hydrogen dynamics and deposition conditions in photochromic YHO/MoO$_3$ bilayer films

Oxygen-containing yttrium hydride (YHO) and molybdenum trioxide (MoO$_3$) bilayer films (YHO/MoO$_3$) are produced using reactive magnetron sputtering, and their photochromic properties are investigated in relation to the thickness and density of the MoO$_3$ layer. Compared to single YHO films, the YHO/MoO$_3$ films exhibit faster coloration and larger contrast, with both parameters adjustable by varying the thickness or deposition pressure of the MoO$_3$ layer. Transparent YHO/MoO$_3$ films (~75% at 550 nm) demonstrate a photochromic contrast of up to 60%, significantly higher than the 25-30% contrast observed for single YHO films after 20 hours of UVA-violet light exposure. This enhancement arises from hydrogen intercalation from the (200)-textured polycrystalline YHO film into the X-ray amorphous MoO$_3$, leading to the formation of molybdenum bronze (HxMoO$_3$), as confirmed by X-ray photoelectron and optical spectroscopies. However, the darkened YHO/MoO$_3$ films do not fully recover to their initial transparency after illumination due to the irreversible nature of the coloured MoO$_3$ layer. Most of the hydrogen intercalated into MoO$_3$ originates from the YHO layer during the initial darkening process. Furthermore, the bilayer films are chemically unstable, exhibiting gradual darkening over time even without intentional UV illumination, as confirmed by nuclear reaction analysis.

cond-mat.mtrl-sci↗

arXiv2024

Deposition and photoluminescence of zinc gallium oxide thin films with varied stoichiometry made by reactive magnetron co-sputtering

This paper reports on the deposition and photoluminescence of amorphous and crystalline thin films of zinc gallium oxide with Ga:Zn atomic ratio varied between 0.3 and 5.7. The films are prepared by reactive direct current magnetron co-sputtering from liquid/solid gallium/zinc targets onto fused quartz substrates; the temperature of the substrate is varied from room temperature (RT) to 800°C. The sputtering process is effectively controlled by fixing the sputtering power of one of the targets and controlling the power of the other target by plasma optical emission spectroscopy. The method, in conjunction with oxygen flow adjustment, enables the production of near-stoichiometric films at any temperature used. The composition analysis suggests a few at.% oxygen deficiency in the films. The resulting deposition rate is at least an order of magnitude higher compared to the commonly used radio-frequency sputtering from a ceramic ZnO:Ga2O3 target. Deposited onto unheated substrates, the films with Ga:Zn {\approx} 2 are X-ray amorphous. Well-defined X-ray diffraction peaks of spinel ZnGa2O4 start to appear at a substrate temperature of 300°C. The surface of the as-deposited films is dense and exhibits a fine-featured structure observed in electron microscopy images. Increasing the deposition temperature from RT to 800°C eliminates defects and improves crystallinity, which for the films with Ga:Zn ratio close to 2 results in an increase in the optical band gap from 4.6 eV to 5.1 eV. Room temperature photoluminescence established the main peak at 3.1 eV (400 nm); a similar peak in Ga2O3 is ascribed to oxygen-vacancy related transitions. A prominent feature around 2.9 eV (428 nm) is attributed to self-activation center of the octahedral Ga-O groups in the spinel lattice of ZnGa2O4. It was found that photoluminescence from ZnGa2O4 depends significantly on the ratio Ga:Zn.

cond-mat.mtrl-sci↗