arXiv subjects

André Schleife

Publications and source records attributed to André Schleife.

44 records · Page 3Linked to original sources

arXiv2019

Strain and screening: Optical properties of a small-diameter carbon nanotube from first principles

Carbon nanotubes (CNTs) are a one-dimensional material system with intriguing physical properties that lead to emerging applications. While CNTs are unusually strain resistant compared to bulk materials, their optical-absorption spectrum is highly strain dependent. It is an open question, as to what extent this is attributed to strain-dependent (i) electronic single-particle transitions, (ii) dielectric screening, or (iii) atomic geometries including CNT radii. We use cutting-edge theoretical spectroscopy to explain strain-dependent electronic structure and optical properties of an (8,0) CNT. Quasiparticle effects are taken into account using Hedin's GW approximation and excitonic effects are described by solving a Bethe-Salpeter-equation for the optical polarization function. This accurate first-principles approach allows us to identify an inuence of strain on screening of the Coulomb electron-electron interaction and to quantify the impact on electronic structure and optical absorption of one-dimensional systems. We interpret our thoroughly converged results using an existing scaling relation and extend the use of this relation to strained CNTs: We show that it captures optical absorption with satisfactory accuracy, as long as screening, quasiparticle gap, and effective electron and hole masses of the strained CNT are known.

physics.comp-ph↗

arXiv2018

Hot-electron mediated ion diffusion in proton-irradiated magnesium oxide

Highly energetic ions that impact materials have applications from semiconductor industry to medicine, and are fundamentally interesting as they trigger multi-length and time-scale processes. In particular, they excite electrons into non-thermalized energy distributions with subsequent non-equilibrium electron-electron and electron-ion dynamics. In order to achieve a quantitative description of these, we propose a general first-principles framework that bridges time scales from ultrafast electron dynamics directly after impact, to ion diffusion over migration barriers in semiconductors. We apply it to magnesium oxide under proton irradiation and discover a diffusion mechanism that is mediated by hot electrons. Our quantitative simulations show that this mechanism strongly depends on the projectile-ion velocity. This indicates that it may occur only at a specific penetration depth in the target and that it can be triggered by varying the kinetic energy of the particle radiation. Either of these predictions should facilitate direct experimental observation of this effect and significantly advances current understanding of non-equilibrium electron-ion dynamics.

cond-mat.mtrl-sci↗

arXiv2018

Electronic stopping and proton dynamics in InP, GaP, and In$_{0.5}$Ga$_{0.5}$P from first principles

The phosphide-based III-V semiconductors InP, GaP, and In$_{0.5}$Ga$_{0.5}$P are promising materials for solar panels in outer space and radioisotope batteries, for which lifetime is a major issue. In order to understand high radiation tolerance of these materials and improve it further, it is necessary to describe the early stages of radiation damage on fast time and short length scales. In particular, the influence of atomic ordering, as observed e.g. in In$_{0.5}$Ga$_{0.5}$P, on electronic stopping is unknown.We use real-time time-dependent density functional theory and the adiabatic local density approximation to simulate electronic stopping of protons in InP, GaP, and the CuAu-I ordered phase of In$_{0.5}$Ga$_{0.5}$P across a large kinetic energy range.These results are compared to SRIM and we investigate the dependence on the channel of the projectile through the target.We show that stopping can be enhanced or reduced in In$_{0.5}$Ga$_{0.5}$P and explain this using the electron-density distribution. By comparing Ehrenfest and Born-Oppenheimer molecular dynamics, we illustrate the intricate dynamics of a proton on a channeling trajectory.

cond-mat.mtrl-sci↗

arXiv2018

Voltage induced switching of an antiferromagnetically ordered topological Dirac semimetal

An antiferromagnetic semimetal has been recently identified as a new member of topological semimetals that may host three-dimensional symmetry-protected Dirac fermions. A reorientation of the Néel vector may break the underlying symmetry and open a gap in the quasi-particle spectrum, inducing the (semi)metal-insulator transition. Here, we predict that such transition may be controlled by manipulating the chemical potential location of the material. We perform both analytical and numerical analysis on the thermodynamic potential of the model Hamiltonian and find that the gapped spectrum is preferred when the chemical potential is located at the Dirac point. As the chemical potential deviates from the Dirac point, the system shows a possible transition from the gapped to the gapless phase and switches the corresponding Néel vector configuration. We perform density functional theory calculations to verify our analysis using a realistic material and discuss a two terminal transport measurement as a possible route to identify the voltage induced switching of the Néel vector.

cond-mat.mes-hall↗

arXiv2018

Carrier-Specific Femtosecond XUV Transient Absorption of PbI2 Reveals Ultrafast Nonradiative Recombination

Femtosecond carrier recombination in PbI2 is measured using tabletop high-harmonic extreme ultraviolet (XUV) transient absorption spectroscopy and ultrafast electron diffraction. XUV absorption from 45 eV to 62 eV measures transitions from the iodine 4d core level to the conduction band density of states. Photoexcitation at 400 nm creates separate and distinct transient absorption signals for holes and electrons, separated in energy by the 2.4 eV band gap of the semiconductor. The shape of the conduction band and therefore the XUV absorption spectrum is temperature dependent, and nonradiative recombination converts the initial electronic excitation to thermal excitation within picoseconds. Ultrafast electron diffraction (UED) is used to measure the lattice temperature and confirm the recombination mechanism. The XUV and UED results support a 2nd-order recombination model with a rate constant of 2.5x10-9 cm3/s.

cond-mat.mtrl-sci↗

arXiv2017

Optimization of Anisotropic Photonic Density of States for Raman Cooling

Optical refrigeration of solids holds tremendous promise for applications in thermal management. It can be achieved through multiple mechanisms including inelastic anti-Stokes Brillouin and Raman scattering. However, engineering of these mechanisms remains relatively unexplored. The major challenge lies in the natural unfavorable imbalance in transition rates for Stokes and anti-Stokes scattering. We consider the influence of anisotropic photonic density of states on Raman scattering and derive expressions for cooling in such systems. We demonstrate optimization of the Raman cooling figure of merit considering all possible orientations for the material crystal and two example photonic crystals. We find that the anisotropic description of the photonic DoS and the optimization process is necessary to obtain the best Raman cooling efficiency for systems having lower symmetry. This general result applies to a wide array of other laser cooling methods in the presence of anisotropy.

physics.optics↗

arXiv2015

A first-principles study of co-doping in lanthanum bromide

Co-doping of Ce-doped LaBr$_3$ with Ba, Ca, or Sr improves the energy resolution that can be achieved by radiation detectors based on these materials. Here, we present a mechanism that rationalizes of this enhancement that on the basis of first principles electronic structure calculations and point defect thermodynamics. It is shown that incorporation of Sr creates neutral $V_\text{Br}$-Sr$_\text{La}$ complexes that can temporarily trap electrons. As a result, Auger quenching of free carriers is reduced, allowing for a more linear, albeit slower, scintillation light yield response. Experimental Stokes shifts can be related to different Ce$_\text{La}$-Sr$_\text{La}$-$V_\text{Br}$ triple complex configurations. Co-doping with other alkaline as well as alkaline earth metals is considered as well. Alkaline elements are found to have extremely small solubilities on the order of 0.1 ppm and below at 1000 K. Among the alkaline earth metals the lighter dopant atoms prefer interstitial-like positions and create strong scattering centers, which has a detrimental impact on carrier mobilities. Only the heavier alkaline earth elements combine matching ionic radii with sufficiently high solubilities. This provides a rationale for the experimental finding that improved scintillator performance is exclusively achieved using Sr, Ca, or Ba. The present mechanism demonstrates that co-doping of wide gap materials can provide an efficient means for managing charge carrier populations under out-of-equilibrium conditions. In the present case dopants are introduced that manipulate not only the concentrations but the electronic properties of intrinsic defects without introducing additional gap levels. This leads to the availability of shallow electron traps that can temporarily localize charge carriers, effectively deactivating carrier-carrier recombination channels. The principles of this ... [continued]

cond-mat.mtrl-sci↗

arXiv2014

Origin of resolution enhancement by co-doping of scintillators: Insight from electronic structure calculations

It was recently shown that the energy resolution of Ce-doped LaBr$_3$ scintillator radiation detectors can be crucially improved by co-doping with Sr, Ca, or Ba. Here we outline a mechanism for this enhancement on the basis of electronic structure calculations. We show that (i) Br vacancies are the primary electron traps during the initial stage of thermalization of hot carriers, prior to hole capture by Ce dopants; (ii) isolated Br vacancies are associated with deep levels; (iii) Sr doping increases the Br vacancy concentration by several orders of magnitude; (iv) $\text{Sr}_\text{La}$ binds to $V_\text{Br}$ resulting in a stable neutral complex; and (v) association with Sr causes the deep vacancy level to move toward the conduction band edge. The latter is essential for reducing the effective carrier density available for Auger quenching during thermalization of hot carriers. Subsequent de-trapping of electrons from $\text{Sr}_\text{La}-V_\text{La}$ complexes then can activate Ce dopants that have previously captured a hole leading to luminescence. This mechanism implies an overall reduction of Auger quenching of free carriers, which is expected to improve the linearity of the photon light yield with respect to the energy of incident electron or photon.

cond-mat.mtrl-sci↗