arXiv subjects

Andre K. Geim

Publications and source records attributed to Andre K. Geim.

At least 37 records · Page 2Linked to original sources

arXiv2020

Proton and Li-Ion Permeation through Graphene with Eight-Atom-Ring Defects

Defect-free graphene is impermeable to gases and liquids but highly permeable to thermal protons. Atomic-scale defects such as vacancies, grain boundaries and Stone-Wales defects are predicted to enhance graphene's proton permeability and may even allow small ions through, whereas larger species such as gas molecules should remain blocked. These expectations have so far remained untested in experiment. Here we show that atomically thin carbon films with a high density of atomic-scale defects continue blocking all molecular transport, but their proton permeability becomes ~1,000 times higher than that of defect-free graphene. Lithium ions can also permeate through such disordered graphene. The enhanced proton and ion permeability is attributed to a high density of 8-carbon-atom rings. The latter pose approximately twice lower energy barriers for incoming protons compared to the 6-atom rings of graphene and a relatively low barrier of ~0.6 eV for Li ions. Our findings suggest that disordered graphene could be of interest as membranes and protective barriers in various Li-ion and hydrogen technologies.

cond-mat.mtrl-sci↗

arXiv2019

Stacking Order in Graphite Films Controlled by Van der Waals Technology

In graphite crystals, layers of graphene reside in three equivalent, but distinct, stacking positions typically referred to as A, B, and C projections. The order in which the layers are stacked defines the electronic structure of the crystal, providing an exciting degree of freedom which can be exploited for designing graphitic materials with unusual properties including predicted high-temperature superconductivity and ferromagnetism. However, the lack of control of the stacking sequence limits most research to the stable ABA form of graphite. Here we demonstrate a strategy to control the stacking order using van der Waals technology. To this end, we first visualise the distribution of stacking domains in graphite films and then perform directional encapsulation of ABC-rich graphite crystallites with hexagonal boron nitride (hBN). We found that hBN-encapsulation which is introduced parallel to the graphite zigzag edges preserves ABC stacking, while encapsulation along the armchair edges transforms the stacking to ABA. The technique presented here should facilitate new research on the important properties of ABC graphite.

cond-mat.mes-hall↗

arXiv2019

Molecular streaming and its voltage control in ångström scale channels

The field of nanofluidics has shown considerable progress over the past decade thanks to key instrumental advances, leading to the discovery of a number of exotic transport phenomena for fluids and ions under extreme confinement. Recently, van der Waals assembly of 2D materials allowed fabrication of artificial channels with angström-scale precision. This ultimate confinement to the true molecular scale revealed unforeseen behaviour for both mass and ionic transport. In this work, we explore pressure-driven streaming in such molecular-size slits and report a new electro-hydrodynamic effect under coupled pressure and electric force. It takes the form of a transistor-like response of the pressure induced ionic streaming: an applied bias of a fraction of a volt results in an enhancement of the streaming mobility by up to 20 times. The gating effect is observed with both graphite and boron nitride channels but exhibits marked material-dependent features. Our observations are rationalized by a theoretical framework for the flow dynamics, including the frictional interaction of water, ions and the confining surfaces as a key ingredient. The material dependence of the voltage modulation can be traced back to a contrasting molecular friction on graphene and boron nitride. The highly nonlinear transport under molecular-scale confinement offers new routes to actively control molecular and ion transport and design elementary building blocks for artificial ionic machinery, such as ion pumps. Furthermore, it provides a versatile platform to explore electro-mechanical couplings potentially at play in recently discovered mechanosensitive ionic channels.

cond-mat.soft↗

arXiv2019

Two-dimensional covalent crystals by chemical conversion of thin van der Waals materials

Most of the studied two-dimensional (2D) materials have been obtained by exfoliation of van der Waals crystals. Recently, there has been growing interest in fabricating synthetic 2D crystals which have no layered bulk analogues. These efforts have been focused mainly on the surface growth of molecules in high vacuum. Here, we report an approach to making 2D crystals of covalent solids by chemical conversion of van der Waals layers. As an example, we use 2D indium selenide (InSe) obtained by exfoliation and converted it by direct fluorination into indium fluoride (InF3), which has a non-layered, rhombohedral structure and therefore cannot be possibly obtained by exfoliation. The conversion of InSe into InF3 is found to be feasible for thicknesses down to three layers of InSe, and the obtained stable InF3 layers are doped with selenium. We study this new 2D material by optical, electron transport and Raman measurements and show that it is a semiconductor with a direct bandgap of 2.2 eV, exhibiting high optical transparency across the visible and infrared spectral ranges. We also demonstrate the scalability of our approach by chemical conversion of large-area, thin InSe laminates obtained by liquid exfoliation into InF3 films. The concept of chemical conversion of cleavable thin van der Waals crystals into covalently-bonded non-cleavable ones opens exciting prospects for synthesizing a wide variety of novel atomically thin covalent crystals.

cond-mat.mtrl-sci↗

arXiv2019

Imaging work and dissipation in the quantum Hall state in graphene

Topology is a powerful recent concept asserting that quantum states could be globally protected against local perturbations. Dissipationless topologically protected states are thus of major fundamental interest as well as of practical importance in metrology and quantum information technology. Although topological protection can be robust theoretically, in realistic devices it is often fragile against various dissipative mechanisms, which are difficult to probe directly because of their microscopic origins. By utilizing scanning nanothermometry, we visualize and investigate microscopic mechanisms undermining the apparent topological protection in the quantum Hall state in graphene. Our simultaneous nanoscale thermal and scanning gate microscopy shows that the dissipation is governed by crosstalk between counterpropagating pairs of downstream and upstream channels that appear at graphene boundaries because of edge reconstruction. Instead of local Joule heating, however, the dissipation mechanism comprises two distinct and spatially separated processes. The work generating process that we image directly and which involves elastic tunneling of charge carriers between the quantum channels, determines the transport properties but does not generate local heat. The independently visualized heat and entropy generation process, in contrast, occurs nonlocally upon inelastic resonant scattering off single atomic defects at graphene edges, while not affecting the transport. Our findings offer a crucial insight into the mechanisms concealing the true topological protection and suggest venues for engineering more robust quantum states for device applications.

cond-mat.mes-hall↗

arXiv2019

Visualizing Poiseuille flow of hydrodynamic electrons

Hydrodynamics is a general description for the flow of a fluid, and is expected to hold even for fundamental particles such as electrons when inter-particle interactions dominate. While various aspects of electron hydrodynamics were revealed in recent experiments, the fundamental spatial structure of hydrodynamic electrons, the Poiseuille flow profile, has remained elusive. In this work, we provide the first real-space imaging of Poiseuille flow of an electronic fluid, as well as visualization of its evolution from ballistic flow. Utilizing a scanning nanotube single electron transistor, we image the Hall voltage of electronic flow through channels of high-mobility graphene. We find that the profile of the Hall field across the channel is a key physical quantity for distinguishing ballistic from hydrodynamic flow. We image the transition from flat, ballistic field profiles at low temperature into parabolic field profiles at elevated temperatures, which is the hallmark of Poiseuille flow. The curvature of the imaged profiles is qualitatively reproduced by Boltzmann calculations, which allow us to create a 'phase diagram' that characterizes the electron flow regimes. Our results provide long-sought, direct confirmation of Poiseuille flow in the solid state, and enable a new approach for exploring the rich physics of interacting electrons in real space.

cond-mat.mes-hall↗

arXiv2019

Colossal infrared and terahertz magneto-optical activity in a two-dimensional Dirac material

When two-dimensional electron gases (2DEGs) are exposed to magnetic field, they resonantly absorb electromagnetic radiation via electronic transitions between Landau levels (LLs). In 2DEGs with a Dirac spectrum, such as graphene, theory predicts an exceptionally high infrared magneto-absorption, even at zero doping. However, the measured LL magneto-optical effects in graphene have been much weaker than expected because of imperfections in the samples available so far for such experiments. Here we measure magneto-transmission and Faraday rotation in high-mobility encapsulated monolayer graphene using a custom designed setup for magneto-infrared microspectroscopy. Our results show a strongly enhanced magneto-optical activity in the infrared and terahertz ranges characterized by a maximum allowed (50%) absorption of light, a 100% magnetic circular dichroism as well as a record high Faraday rotation. Considering that sizeable effects have been already observed at routinely achievable magnetic fields, our findings demonstrate a new potential of magnetic tuning in 2D Dirac materials for long-wavelength optoelectronics and plasmonics.

cond-mat.str-el↗

arXiv2019

Flat Bands in Buckled Graphene Superlattices

Interactions between stacked two-dimensional (2D) atomic crystals can radically change their properties, leading to essentially new materials in terms of the electronic structure. Here we show that monolayers placed on an atomically flat substrate can be forced to undergo a buckling transition, which results in periodically strained superlattices. By using scanning tunneling microscopy and spectroscopy and support from numerical simulations, we show that such lateral superlattices in graphene lead to a periodically modulated pseudo-magnetic field, which in turn creates a post-graphene material with flat electronic bands. The described approach of controllable buckling of 2D crystals offers a venue for creating other superlattice systems and, in particular, for exploring interaction phenomena characteristic of flat bands.

cond-mat.mes-hall↗

arXiv2019

Planar and van der Waals heterostructures for vertical tunnelling single electron transistors

Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures. Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene nanoribbons with well-defined edges; and vertical heterostructures resulted in the observation of superconductivity in purely carbon-based systems and realisation of vertical tunnelling transistors. Here we demonstrate simultaneous use of in-plane and van der Waals heterostructures to build vertical single electron tunnelling transistors. We grow graphene quantum dots inside the matrix of hexagonal boron nitride, which allows a dramatic reduction of the number of localised states along the perimeter of the quantum dots. The use of hexagonal boron nitride tunnel barriers as contacts to the graphene quantum dots make our transistors reproducible and not dependent on the localised states, opening even larger flexibility when designing future devices.

cond-mat.mes-hall↗

arXiv2019

Failure of conductance quantization in two-dimensional topological insulators due to non-magnetic impurities

Despite topological protection and the absence of magnetic impurities, two-dimensional topological insulators display quantized conductance only in surprisingly short channels, which can be as short as 100 nm for atomically thin materials. We show that the combined action of short-range nonmagnetic impurities located near the edges and on site electron-electron interactions effectively creates noncollinear magnetic scatterers, and, hence, results in strong backscattering. The mechanism causes deviations from quantization even at zero temperature and for a modest strength of electron-electron interactions. Our theory provides a straightforward conceptual framework to explain experimental results, especially those in atomically thin crystals, plagued with short-range edge disorder.

cond-mat.mes-hall↗

arXiv2018

Simultaneous imaging of voltage and current density of flowing electrons in two dimensions

Electron transport in nanoscale devices can often result in nontrivial spatial patterns of voltage and current that reflect a variety of physical phenomena, particularly in nonlocal transport regimes. While numerous techniques have been devised to image electron flows, the need remains for a nanoscale probe capable of simultaneously imaging current and voltage distributions with high sensitivity and minimal invasiveness, in magnetic field, across a broad range of temperatures, and beneath an insulating surface. Here we present such a technique for spatially mapping electron flows based on a nanotube single-electron transistor, which achieves high sensitivity for both voltage and current imaging. In a series of experiments using high-mobility graphene devices, we demonstrate the ability of our technique to visualize local aspects of intrinsically nonlocal transport, as in ballistic flows, which are not easily resolvable via existing methods. This technique should both aid in understanding the physics of two-dimensional electronic devices, as well as enable new classes of experiments that image electron flow through buried nanostructures in the quantum and interaction-dominated regimes.

cond-mat.mes-hall↗

arXiv2018

Fluidity Onset in Graphene

Viscous electron fluids have emerged recently as a new paradigm of strongly-correlated electron transport in solids. Here we report on a direct observation of the transition to this long-sought-for state of matter in a high-mobility electron system in graphene. Unexpectedly, the electron flow is found to be interaction-dominated but non-hydrodynamic (quasiballistic) in a wide temperature range, showing signatures of viscous flows only at relatively high temperatures. The transition between the two regimes is characterized by a sharp maximum of negative resistance, probed in proximity to the current injector. The resistance decreases as the system goes deeper into the hydrodynamic regime. In a perfect darkness-before-daybreak manner, the interaction-dominated negative response is strongest at the transition to the quasiballistic regime. Our work provides the first demonstration of how the viscous fluid behavior emerges in an interacting electron system.

cond-mat.mes-hall↗

arXiv2018

Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3

The growing family of two-dimensional (2D) materials that are now available can be used to assemble van der Waals heterostructures with a wide range of properties. Of particular interest are tunnelling heterostructures, which have been used to study the electronic states both in the tunnelling barrier and in the emitter and collector contacts. Recently, 2D ferromagnets have been studied theoretically and experimentally. Here we investigate electron tunnelling through a thin (2-6 layers) ferromagnetic CrBr3 barrier. For devices with non-magnetic barriers, conservation of momentum can be relaxed by phonon-assisted tunnelling or by tunnelling through localised states. In the case of our ferromagnetic barrier the dominant tunnelling mechanisms are the emission of magnons at low temperatures or scattering of electrons on localised magnetic excitations above the Curie temperature. Tunnelling with magnon emission offers the possibility of injecting spin into the collector electrode.

cond-mat.mes-hall↗

arXiv2018

Large tunable valley splitting in edge-free graphene quantum dots on boron nitride

Coherent manipulation of binary degrees of freedom is at the heart of modern quantum technologies. Graphene offers two binary degrees: the electron spin and the valley. Efficient spin control has been demonstrated in many solid state systems, while exploitation of the valley has only recently been started, yet without control on the single electron level. Here, we show that van-der Waals stacking of graphene onto hexagonal boron nitride offers a natural platform for valley control. We use a graphene quantum dot induced by the tip of a scanning tunneling microscope and demonstrate valley splitting that is tunable from -5 to +10 meV (including valley inversion) by sub-10-nm displacements of the quantum dot position. This boosts the range of controlled valley splitting by about one order of magnitude. The tunable inversion of spin and valley states should enable coherent superposition of these degrees of freedom as a first step towards graphene-based qubits.

cond-mat.mes-hall↗

arXiv2018

Unusual suppression of the superconducting energy gap and critical temperature in atomically thin NbSe2

It is well known that superconductivity in thin films is generally suppressed with decreasing thickness. This suppression is normally governed by either disorder-induced localization of Cooper pairs, weakening of Coulomb screening, or generation and unbinding of vortex-antivortex pairs as described by the Berezinskii-Kosterlitz-Thouless (BKT) theory. Defying general expectations, few-layer NbSe2 - an archetypal example of ultrathin superconductors - has been found to remain superconducting down to monolayer thickness. Here we report measurements of both the superconducting energy gap and critical temperature in high-quality monocrystals of few-layer NbSe2, using planar-junction tunneling spectroscopy and lateral transport. We observe a fully developed gap that rapidly reduces for devices with the number of layers N < 5, as does their ctitical temperature. We show that the observed reduction cannot be explained by disorder, and the BKT mechanism is also excluded by measuring its transition temperature that for all N remains very close to Tc. We attribute the observed behavior to changes in the electronic band structure predicted for mono- and bi- layer NbSe2 combined with inevitable suppression of the Cooper pair density at the superconductor-vacuum interface. Our experimental results for N > 2 are in good agreement with the dependences of the gap and Tc expected in the latter case while the effect of band-structure reconstruction is evidenced by a stronger suppression of the gap and the disappearance of its anisotropy for N = 2. The spatial scale involved in the surface suppression of the density of states is only a few angstroms but cannot be ignored for atomically thin superconductors.

cond-mat.supr-con↗

arXiv2018

Giant photo-effect in proton transport through graphene membranes

Graphene has recently been shown to be permeable to thermal protons, the nuclei of hydrogen atoms, which sparked interest in its use as a proton-conducting membrane in relevant technologies. However, the influence of light on proton permeation remains unknown. Here we report that proton transport through Pt-nanoparticle-decorated graphene can be enhanced strongly by illuminating it with visible light. Using electrical measurements and mass spectrometry, we find a photoresponsivity of 10^4 A W-1, which translates into a gain of 10^4 protons per photon with response times in the microsecond range. These characteristics are competitive with those of state-of-the-art photodetectors that are based on electron transport using silicon and novel two-dimensional materials. The photo-proton effect can be important for graphene's envisaged use in fuel cells and hydrogen isotope separation. Our observations can also be of interest for other applications such as light-induced water splitting, photocatalysis and novel photodetectors.

physics.app-ph↗

arXiv2017

Imaging resonant dissipation from individual atomic defects in graphene

Conversion of electric current into heat involves microscopic processes that operate on nanometer length-scales and release minute amounts of power. While central to our understanding of the electrical properties of materials, individual mediators of energy dissipation have so far eluded direct observation. Using scanning nano-thermometry with sub-micro K sensitivity we visualize and control phonon emission from individual atomic defects in graphene. The inferred electron-phonon 'cooling power spectrum' exhibits sharp peaks when the Fermi level comes into resonance with electronic quasi-bound states at such defects, a hitherto uncharted process. Rare in the bulk but abundant at graphene's edges, switchable atomic-scale phonon emitters define the dominant dissipation mechanism. Our work offers new insights for addressing key materials challenges in modern electronics and engineering dissipation at the nanoscale.

cond-mat.mes-hall↗

arXiv2017

Intercalant-independent transition temperature in superconducting black phosphorus

Research on black phosphorus (BP) has been experiencing a renaissance over the last few years, after the demonstration that few-layer BP exhibits high carrier mobility and a thickness-dependent band gap. For a long time, bulk BP is also known to be a superconductor under high pressure exceeding 10 GPa. The superconductivity is due to a structural transformation into another allotrope of phosphorous and accompanied by a semiconductor-metal transition. No superconductivity could be achieved for BP itself (that is, in its normal orthorhombic form) despite several attempts reported in the literature. Here we describe successful intercalation of BP by several alkali metals (Li, K, Rb, Cs) and alkali-earth Ca. All the intercalated compounds are found to be superconducting, exhibiting the same (within our experimental accuracy) critical temperature of 3.8+-0.1 K and practically identical characteristics in the superconducting state. Such universal superconductivity, independent of the chemical composition, is highly unusual. We attribute it to intrinsic superconductivity of heavily-doped individual phosphorene layers, while the intercalated layers of metal atoms mostly play a role of charge reservoirs.

cond-mat.mtrl-sci↗