arXiv subjects

Andre Schleife

Publications and source records attributed to Andre Schleife.

9 recordsLinked to original sources

arXiv2026

Ultrafast electron dynamics of electron-irradiated graphene

Electron irradiation is essential for materials characterization and modification, though the fundamental interactions between incident electrons and host materials remain under investigation. Here, we employ first-principles simulations to study electron dynamics under external electron irradiation. We quantify differences in key observables, including kinetic energy loss, secondary electron emission, and backscattered electrons, between classical and quantum mechanical descriptions of the incident electron. Around 400 eV incident energy, we identify significant differences in backscattered electron yields between classical point-charge and quantum wave-packet descriptions, whereas the quantum-mechanical effects diminish at incident energies above 600 eV. These differences highlight the critical importance of quantum effects in electron irradiation phenomena that occur in a specific energy range of the incident electron. Our results provide clear guidance for selecting appropriate incident, electron descriptions based on kinetic-energy regimes, identify a targeted experimental window for isolating quantum-only backscattering, and enable the rational design of 2D materials for nanofabrication and high-resolution electron-beam technologies.

cond-mat.mtrl-sci↗

arXiv2025

Digital Quantum Simulation of Spin Transport

Understanding transport phenomena in quantum spin systems has long intrigued physicists due to their potential applications in spintronic devices and spin qubits. Here, using a superconducting-qubit-based transmon device, we show that pre-fault-tolerant digital quantum simulation is reliable for studying transport phenomena via spin-current autocorrelation function (ACF). While quantum simulations of the spin-spin ACF have been used to probe spin transport, methods based on the spin-current ACF have yet to be demonstrated due to their high gate cost, despite offering more direct information relevant to the transport properties. Overcoming the resource constraints set by indirect measurement schemes like the Hadamard test, we showcase a direct measurement scheme that utilizes non-unitary operations, in particular mid-circuit measurements, to investigate spin transport for the 40-site 1D XXZ Heisenberg model in the near-ballistic, superdiffusive, and diffusive regimes. We successfully reproduce the expected power-law behavior in the superdiffusive regime and vanishing of the Drude weight in the diffusive regime.

quant-ph↗

arXiv2025

Field-effect transistors based on charged domain walls in van der Waals ferroelectric α-In$_2$Se$_3$

Charged domain walls (CDW) in ferroelectrics are emerging as functional interfaces with potential applications in nonvolatile memory, logic, and neuromorphic computing. However, CDWs in conventional ferroelectrics are vertical, buried, or electrically inaccessible interfaces that prevent their use in functional devices. Here, we overcome these challenges by stacking two opposite polar domains of van der Waals ferroelectric $α$-In$_2$Se$_3$ to generate artificial head-head (H-H) CDWs and use edge contact to fabricate charged domain wall-based field-effect transistors (CDW-FET). We relate the atomic structure to the temperature-dependent electrical and magneto-transport of the CDW-FET. CDW-FETs exhibit a metal-to-insulator transition with decreasing temperature and enhanced conductance and field-effect mobility compared to single domain $α$-In$_2$Se$_3$. We identify two regimes of transport: variable range hopping due to disorder in the band edge below 70 K and thermally activated interfacial trap-assisted transport above 70 K. The CDW-FETs show room-temperature resistance down to 3.1 k$Ω$ which is 2-9 orders of magnitude smaller than the single CDW in thin-film ferroelectrics. These results resolve longstanding challenges with high CDW resistance and their device integration, opening opportunities for gigahertz memory and neuromorphic computing.

cond-mat.mtrl-sci↗

arXiv2025

The dynamical role of optical phonons and sub-lattice screening in a solid-state ion conductor

Solid-state electrolytes (SSEs) require ionic conductivities that are competitive with liquid electrolytes to realize applications in all-solid state batteries. Although numerous materials have been discovered, the underlying mechanisms enabling superionic conduction remain elusive. In particular, the role of ultrafast lattice dynamics in mediating ion migration, which involves couplings between ions, phonons, and electrons, is rarely explored experimentally at their corresponding timescales. To investigate the contributions of coupled lattice dynamics on ion migration, we modulate the charge density occupations within the crystal, and then measure the time-resolved change in impedance on picosecond timescales for a candidate SSE, Li0.5La0.5TiO3. Upon perturbation, we observe enhanced ion migration at ultrafast timescales that are shorter than laser-induced heating. The respective transients match the timescales of optical and acoustic phonon vibrations, suggesting their involvement in ion migration. We further computationally evaluate the effect of a charge transfer from the O 2p to Ti 3d band on the electronic and physical structure of LLTO. We hypothesize that the charge transfer excitation distorts the TiO6 polyhedra by altering the local charge density occupancy of the hopping site at the migration pathway saddle point, thereby causing a reduction in the migration barrier for the Li+ hop, shown using computation. We rule out the contribution of photogenerated electrons and laser heating. Overall, our investigation introduces a new spectroscopic tool to probe fundamental ion hopping mechanisms transiently at ultrafast timescales, which has previously only been achieved in a time-averaged manner or solely via computational methods. Our proposed technique expands our capability to answer dynamical questions previously limited by incumbent spectroscopic strategies.

cond-mat.mtrl-sci↗

arXiv2022

First-principles simulation of light-ion microscopy of graphene

The extreme sensitivity of 2D materials to defects and nanostructure requires precise imaging techniques to verify presence of desirable and absence of undesirable features in the atomic geometry. Helium-ion beams have emerged as a promising materials imaging tool, achieving up to 20 times higher resolution and 10 times larger depth-of-field than conventional or environmental scanning electron microscopes. Here, we offer first-principles theoretical insights to advance ion-beam imaging of atomically thin materials by performing real-time time-dependent density functional theory simulations of single impacts of 10-200 keV light ions in free-standing graphene. We predict that detecting electrons emitted from the back of the material (the side from which the ion exits) would result in up to 3 times higher signal and up to 5 times higher contrast images, making 2D materials especially compelling targets for ion-beam microscopy. We also find that the charge induced in the graphene equilibrates on a sub-fs time scale, leading to only slight disturbances in the carbon lattice that are unlikely to damage the atomic structure for any of the beam parameters investigated here.

cond-mat.mtrl-sci↗

arXiv2022

Electron dynamics in extended systems within real-time time-dependent density functional theory

Due to a beneficial balance of computational cost and accuracy, real-time time-dependent density functional theory has emerged as a promising first-principles framework to describe electron real-time dynamics. Here we discuss recent implementations around this approach, in particular in the context of complex, extended systems. Results include an analysis of the computational cost associated with numerical propagation and when using absorbing boundary conditions. We extensively explore the shortcomings for describing electron-electron scattering in real time and compare to many-body perturbation theory. Modern improvements of the description of exchange and correlation are reviewed. In this work, we specifically focus on the Qb@ll code, which we have mainly used for these types of simulations over the last years, and we conclude by pointing to further progress needed going forward.

cond-mat.mtrl-sci↗

arXiv2022

In-plane magnetic structure and exchange interactions in the high-temperature antiferromagnet Cr2Al

The ordered tetragonal intermetallic Cr$_2$Al forms the same structure type as Mn$_2$Au, and the latter has been heavily investigated for its potential in antiferromagnetic spintronics due to its degenerate in-plane Néel vector. We present the single crystal flux growth of Cr$_2$Al and orientation-dependent magnetic properties. Powder neutron diffraction of Cr$_2$Al and first-principles simulations reveal that the magnetic ordering is likely in-plane and therefore identical to Mn$_2$Au, providing a second material candidate in the MoSi$_2$ structure type to evaluate the fundamental interactions that govern spintronic effects. The single ordering transition seen in thermal analysis and resistivity indicates that no canting of the moments along the $c$ axis is likely. Magnetometry, resistivity, and differential scanning calorimetry measurements confirm the Néel temperature to be $634 \pm 2$ K. First-principles simulations indicate that the system has a small density of states at the Fermi energy and confirm the lowest-energy magnetic ground state ordering, while Monte Carlo simulations match the experimental Néel temperature.

cond-mat.mtrl-sci↗

arXiv2017

Non-equilibrium BN-ZnO: Optical properties and excitonic effects from first principles

The non-equilibrium boron nitride (BN) phase of zinc oxide (ZnO) has been reported for thin films and nanostructures, however, its properties are not well understood due to a persistent controversy that prevents reconciling experimental and first-principles results for its atomic coordinates. We use first-principles theoretical spectroscopy to accurately compute electronic and optical properties, including single-quasiparticle and excitonic effects: Band structures and densities of states are computed using density functional theory, hybrid functionals, and the $GW$ approximation. Accurate optical absorption spectra and exciton binding energies are computed by solving the Bethe-Salpeter equation for the optical polarization function. Using this data we show that the band-gap difference between BN-ZnO and wurtzite (WZ) ZnO agrees very well with experiment when the theoretical lattice geometry is used, but significantly disagrees for the experimental atomic coordinates. We also show that the optical anisotropy of BN-ZnO differs significantly from that of WZ-ZnO, allowing to optically distinguish both polymorphs. By using the transfer-matrix method to solve Maxwell's equations for thin films composed of both polymorphs, we illustrate that this opens up a promising route for tuning optical properties.

cond-mat.mtrl-sci↗

arXiv2014

Effects of strain on the valence band structure and exciton-polariton energies in ZnO

The uniaxial stress dependence of the band structure and the exciton-polariton transitions in wurtzite ZnO is thoroughly studied using modern first-principles calculations based on the HSE+G0W0 approach, k p modeling using the deformation potential framework, and polarized photoluminescence measurements. The ordering of the valence bands [A(G7), B(G9), C(G7)] is found to be robust even for high uniaxial and biaxial strains. Theoretical results for the uniaxial pressure coefficients and splitting rates of the A, B, and C valence bands and their optical transitions are obtained including the effects of the spin-orbit interaction. The excitonic deformation potentials are derived and the stress rates for hydrostatic pressure are determined based on the results for uniaxial and biaxial stress. In addition, the theory for the stress dependence of the exchange interaction and longitudinal-transversal splitting of the exciton-polaritons is developed using the basic exciton functions of the quasi-cubic approximation and taking the interaction between all exciton states into account. It is shown that the consideration of these effects is crucial for an accurate description of the stress dependence of the optical spectra in ZnO. The theoretical results are compared to polarized photoluminescence measurements of different ZnO substrates as function of uniaxial pressure and experimental values reported in the literature demonstrating an excellent agreement with the computed pressure coefficients.

cond-mat.mtrl-sci↗