arXiv subjects

Andrea Crovetto

Publications and source records attributed to Andrea Crovetto.

18 recordsLinked to original sources

arXiv2026

A modified Moss rule highlights underexplored classes of high refractive index materials

High refractive index dielectrics are central to photonic applications, yet the empirical Moss rule imposes a fundamental trade-off between refractive index and optical transparency. We introduce a modified Moss rule anchored to the optical absorption edge rather than the fundamental bandgap, capturing materials where various physical mechanisms suppress absorption well above the electronic gap. Screening the Materials Project database with this metric reveals recurring chemical compositions and structural prototypes in the materials with the most promising refractive index/transparency trade-offs. These materials include chalcopyrites, Zintl pnictides, and early transition metal multi-anion chalconitrides and oxychalcogenides compounds. Hybrid density functional theory calculations reveal that the chalconitride (Hf,Zr)2(S,Se)N2 family can achieve a combination of ultra-high refractive indices, low effective masses and transparency windows extending deep into the UV, surpassing state-of-the-art TiO2 and SiC. Our results establish (Hf,Zr)2(S,Se)N2 compounds as a unique and largely unexplored material family for next-generation photonic applications.

cond-mat.mtrl-sci↗

arXiv2026

Rapid estimation of synthesizability windows of inorganic materials from first principles

Fast prediction of the synthesizability conditions of materials remains challenging, even assuming synthesis under thermodynamic equilibrium. We combine density functional theory (DFT) with machine-learned interatomic potentials to enable high-throughput generation of phase predominance diagrams as a function of temperature and partial pressures of the gaseous reactants. These diagrams can immediately be used by experimentalists to translate computational predictions into real synthesis parameters in the lab. Predominance diagrams are generated for a diverse set of binary compounds and for 48 more complex ternary metal phosphosulfide systems, but the method is in principle scalable to any inorganic material class. The calculated predominance diagrams generally show good agreement with the experimental synthesis literature, with a drastic reduction in computational cost compared to a full DFT approach. We find several examples of compounds that appear as metastable in a zero-temperature stability hull picture, but that become thermodynamically stable under well-defined synthesis windows.

cond-mat.mtrl-sci↗

arXiv2026

A sulfonitride transparent conductive thin film with ultra-high refractive index

With the rise of AI-assisted materials screening, extraordinary properties are now frequently predicted in experimentally uncharted material systems, highlighting the need to develop new synthesis methods for unconventional materials beyond the classic bulk powder form. Here, we establish the first thin-film growth route for any metal sulfonitride compound by realizing Zr2SN2 films with a rare and compelling combination of optical and electrical properties. Zr2SN2 is transparent across most of the visible range while exhibiting a very high average refractive index of 2.95 in the visible, exceeding expectations based on conventional refractive index-bandgap scaling. Importantly, the same Zr2SN2 film shows degenerate n-type conductivity with carrier density above 10^20 cm-3 and intragrain mobility above 8 cm2V-1s-1, approaching those of established transparent conductive oxides. Zr2SN2 thus demonstrates that strong light-matter interaction, optical transparency and electrical conductivity can be reconciled within a single material platform, revealing a new class of high-refractive-index transparent conductors.

cond-mat.mtrl-sci↗

arXiv2026

AI-enhanced discovery and accelerated synthesis of metal phosphosulfides

Metal phosphosulfides have emerged as unique multifunctional materials, but they present unique synthesis challenges compared to more established material classes such as oxides and nitrides. As a consequence, experimental development and theoretical understanding of phosphosulfides have focused on individual compounds rather than on accelerated broad-range exploration. In this work, we first evaluate the synthesizability and band gaps of 909 hypothetical ternary phosphosulfides by density functional theory. We find 19 previously unknown thermodynamically stable compounds, including the first Si- and Ge-based phosphosulfides. For rapid band gap prediction, we then develop a multi-fidelity machine learning model to translate semilocal density functional theory band gaps into experimentally calibrated band gaps. Importantly, we extend the accelerated material development workflow to the experimental domain by demonstrating a route to high-throughput synthesis and characterization of virtually any phosphosulfide material system. The method is based on thin-film combinatorial libraries and yields over 100 unique compositions in each experiment, enabling us to synthesize four distinct phosphosulfide compounds in only four combinatorial experiments without prior synthesis recipes and without compromising on material quality. Thus, we argue that accelerated materials development workflows combining theory, artificial intelligence, synthesis, and characterization can be viable even for experimentally challenging inorganic materials.

cond-mat.mtrl-sci↗

arXiv2024

From design to device: challenges and opportunities in computational discovery of p-type transparent conductors

A high-performance p-type transparent conductor (TC) does not yet exist, but could lead to advances in a wide range of optoelectronic applications and enable new architectures for, e.g., next-generation photovoltaic (PV) devices. High-throughput computational material screenings have been a promising approach to filter databases and identify new p-type TC candidates, and some of these predictions have been experimentally validated. However, most of these predicted candidates do not have experimentally-achieved properties on par with n-type TCs used in solar cells, and therefore have not yet been used in commercial devices. Thus, there is still a significant divide between transforming predictions into results that are actually achievable in the lab, and an even greater lag in scaling predicted materials into functional devices. In this perspective, we outline some of the major disconnects in this materials discovery process -- from scaling computational predictions into synthesizable crystals and thin films in the laboratory, to scaling lab-grown films into real-world solar devices -- and share insights to inform future strategies for TC discovery and design.

physics.app-ph↗

arXiv2024

A figure-of-merit-based framework to evaluate photovoltaic materials

I propose a general quantitative framework to evaluate the quality, track the historical development, and guide future optimization of photovoltaic (PV) absorbers at any development level, both lab-made and computer-simulated. The framework is centered around a PV figure of merit designed to include efficiency limitations that are not captured by classic detailed balance methods derived from the Shockley-Queisser limit. A more stringent set of figure-of-merit-driven efficiency limits are calculated for 28 experimentally synthesized PV absorbers and 10 PV computationally modeled absorbers. Among early-stage absorbers, this analysis reveals very large differences in their likelihood of achieving high PV efficiencies in the future. Since the proposed figure of merit is instantly evaluated from a single equation, it can be a suitable objective function for closed-loop research on PV materials in autonomous labs, while also providing a quantitative bridge between computationally determined material properties and PV efficiency.

cond-mat.mtrl-sci↗

arXiv2023

Monolithic Selenium/Silicon Tandem Solar Cells

Selenium is experiencing renewed interest as a promising candidate for the wide bandgap photoabsorber in tandem solar cells. However, despite the potential of selenium-based tandems to surpass the theoretical efficiency limit of single junction devices, such a device has never been demonstrated. In this study, we present the first monolithically integrated selenium/silicon tandem solar cell. Guided by device simulations, we investigate various carrier-selective contact materials and achieve encouraging results, including an open-circuit voltage of V$_\text{oc}$=1.68 V from suns-V$_\text{oc}$ measurements. The high open-circuit voltage positions selenium/silicon tandem solar cells as serious contenders to the industrially dominant single junction technologies. Furthermore, we quantify a pseudo fill factor of more than 80% using injection-level-dependent open-circuit voltage measurements, indicating that a significant fraction of the photovoltaic losses can be attributed to parasitic series resistance. This work provides valuable insights into the key challenges that need to be addressed for realizing higher efficiency selenium/silicon tandem solar cells.

cond-mat.mtrl-sci↗

arXiv2022

Is Cu$_{3-x}$P a semiconductor, a metal, or a semimetal?

Despite the recent surge in interest in Cu$_{3-x}$P for catalysis, batteries, and plasmonics, the electronic nature of Cu$_{3-x}$P remains unclear. Some studies have shown evidence of semiconducting behavior, whereas others have argued that Cu$_{3-x}$P is a metallic compound. Here, we attempt to resolve this dilemma on the basis of combinatorial thin-film experiments, electronic structure calculations, and semiclassical Boltzmann transport theory. We find strong evidence that stoichiometric, defect-free Cu$_3$P is an intrinsic semimetal, i.e., a material with a small overlap between the valence and the conduction band. On the other hand, experimentally realizable Cu$_{3-x}$P films are always p-type semimetals natively doped by copper vacancies regardless of $x$. It is not implausible that Cu$_{3-x}$P samples with very small characteristic sizes (such as small nanoparticles) are semiconductors due to quantum confinement effects that result in opening of a band gap. We observe high hole mobilities (276 cm$^2$/Vs) in Cu$_{3-x}$P films at low temperatures, pointing to low ionized impurity scattering rates in spite of a high doping density. We report an optical effect equivalent to the Burstein-Moss shift, and we assign an infrared absorption peak to bulk interband transitions rather than to a surface plasmon resonance. From a materials processing perspective, this study demonstrates the suitability of reactive sputter deposition for detailed high-throughput studies of emerging metal phosphides.

cond-mat.mtrl-sci↗

arXiv2022

Indirect band gap semiconductors for thin-film photovoltaics: High-throughput calculation of phonon-assisted absorption

Discovery of high-performance materials remains one of the most active areas in photovoltaics (PV) research. Indirect band gap materials form the largest part of the semiconductor chemical space, but predicting their suitability for PV applications from first principles calculations remains challenging. Here we propose a computationally efficient method to account for phonon assisted absorption across the indirect band gap and use it to screen 127 experimentally known binary semiconductors for their potential as thin film PV absorbers. Using screening descriptors for absorption, carrier transport, and nonradiative recombination, we identify 28 potential candidate materials. The list, which contains 20 indirect band gap semiconductors, comprises both well established (3), emerging (16), and previously unexplored (9) absorber materials. Most of the new compounds are anion rich chalcogenides (TiS$_3$, Ga$_2$Te$_5$) and phosphides (PdP$_2$, CdP$_4$, MgP$_4$, BaP$_3$) containing homoelemental bonds, and represent a new frontier in PV materials research. Our work highlights the previously underexplored potential of indirect band gap materials for optoelectronic thin-film technologies.

cond-mat.mtrl-sci↗

arXiv2021

Boron phosphide films by reactive sputtering: Searching for a p-type transparent conductor

With an indirect band gap in the visible and a direct band gap at a much higher energy, boron phosphide (BP) holds promise as an unconventional p-type transparent conductor. Previous experimental reports deal almost exclusively with epitaxial, nominally undoped BP films by chemical vapor deposition. High hole concentrations were often observed, but it is unclear if native defects alone can be responsible for it. Besides, the feasibility of alternative deposition techniques has not been clarified and optical characterization is generally lacking. In this work, we demonstrate reactive sputtering of amorphous BP films, their partial crystallization in a P-containing annealing atmosphere, and extrinsic doping by C and Si. We obtain the highest hole concentration reported to date for p-type BP ($5 \times 10^{20}$ cm$^{-3}$) using C doping under B-rich conditions. We also confirm that bipolar doping is possible in BP. An anneal temperature of at least 1000 $^\circ$C is necessary for crystallization and dopant activation. Hole mobilities are low and indirect optical transitions are much stronger than predicted by theory. Low crystalline quality probably plays a role in both cases. High figures of merit for transparent conductors might be achievable in extrinsically doped BP films with improved crystalline quality.

cond-mat.mtrl-sci↗

arXiv2020

Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier

Following the recent success of monolithically integrated Perovskite/Si tandem solar cells, great interest has been raised in searching for alternative wide bandgap top-cell materials with prospects of a fully earth-abundant, stable and efficient tandem solar cell. Thin film chalcogenides (TFCs) such as the Cu2ZnSnS4 (CZTS) could be suitable top-cell materials. However, TFCs have the disadvantage that generally at least one high temperature step (>500 C) is needed during the synthesis, which could contaminate the Si bottom cell. Here, we systematically investigate the monolithic integration of CZTS on a Si bottom solar cell. A thermally resilient double-sided Tunnel Oxide Passivated Contact (TOPCon) structure is used as bottom cell. A thin (<25 nm) TiN layer between the top and bottom cells, doubles as diffusion barrier and recombination layer. We show that TiN successfully mitigates in-diffusion of CZTS elements into the c-Si bulk during the high temperature sulfurization process, and find no evidence of electrically active deep Si bulk defects in samples protected by just 10 nm TiN. Post-process minority carrier lifetime in Si exceeded 1.5 ,s. i.e., a promising implied open-circuit voltage (i-Voc) of 715 mV after the high temperature sulfurization. Based on these results, we demonstrate a first proof-of-concept two-terminal CZTS/Si tandem device with an efficiency of 1.1% and a Voc of 900 mV. A general implication of this study is that the growth of complex semiconductors on Si using high temperature steps is technically feasible, and can potentially lead to efficient monolithically integrated two-terminal tandem solar cells.

cond-mat.mtrl-sci↗

arXiv2020

Nitride-based interfacial layers for monolithic tandem integration of new solar energy materials on Si: The case of CZTS

The monolithic tandem integration of third-generation solar energy materials on silicon holds great promise for photoelectrochemistry and photovoltaics. However, this can be challenging when it involves high-temperature reactive processes, which would risk damaging the Si bottom cell. One such case is the high-temperature sulfurization/selenization in thin film chalcogenide solar cells, of which the kesterite Cu2ZnSnS4 (CZTS) is an example. Here, by using very thin (<10 nm) TiN-based diffusion barriers at the interface, with different composition and properties, we demonstrate on a device level that the protection of the Si bottom cell is largely dependent on the barrier layer engineering. Several monolithic CZTS/Si tandem solar cells with open-circuit voltages (Voc) up to 1.06 V and efficiencies up to 3.9% are achieved, indicating a performance comparable to conventional interfacial layers based on transparent conductive oxides, and pointing to a promising alternative design in solar energy conversion devices.

cond-mat.mtrl-sci↗

arXiv2020

Experimental and first-principles spectroscopy of Cu$_2$SrSnS$_4$ and Cu$_2$BaSnS$_4$ photoabsorbers

The Cu$_2$BaSnS$_4$ (CBTS) and Cu$_2$SrSnS$_4$ (CSTS) semiconductors have been recently proposed as potential wide band gap photovoltaic absorbers. Although several measurements indicate that they are less affected by band tailing than their parent compound Cu$_2$ZnSnS$_4$, their photovoltaic efficiencies are still low. To identify possible issues, we characterize CBTS and CSTS in parallel by a variety of spectroscopic methods complemented by first-principles calculations. Two main problems are identified in both materials. The first is the existence of deep defect transitions in low-temperature photoluminescence, pointing to a high density of bulk recombination centers. The second is a low electron affinity, which emphasizes the need for an alternative heterojunction partner and electron contact. We also find a tendency for downward band bending at the surface of both materials. In CBTS, this effect is sufficiently large to cause carrier type inversion, which may enhance carrier separation and mitigate interface recombination. Optical absorption at room temperature is exciton-enhanced in both CBTS and CSTS. Deconvolution of excitonic effects yields band gaps that are about 100 meV higher than previous estimates based on Tauc plots. Although the two investigated materials are remarkably similar in an idealized, defect-free picture, the present work points to CBTS as a more promising absorber than CSTS for tandem photovoltaics.

physics.app-ph↗

arXiv2020

Assessing the defect tolerance of kesterite-inspired solar absorbers

Various thin-film I$_2$-II-IV-VI$_4$ photovoltaic absorbers derived from kesterite Cu$_2$ZnSn(S,Se)$_4$ have been synthesized, characterized, and theoretically investigated in the past few years. The availability of this homogeneous materials dataset is an opportunity to examine trends in their defect properties and identify criteria to find new defect-tolerant materials in this vast chemical space. We find that substitutions on the Zn site lead to a smooth decrease in band tailing as the ionic radius of the substituting cation increases. Unfortunately, this substitution strategy does not ensure the suppression of deeper defects and non-radiative recombination. Trends across the full dataset suggest that Gaussian and Urbach band tails in kesterite-inspired semiconductors are two separate phenomena caused by two different antisite defect types. Deep Urbach tails are correlated with the calculated band gap narrowing caused by the (2I$_\mathrm{II}$+IV$_\mathrm{II}$) defect cluster. Shallow Gaussian tails are correlated with the energy difference between the kesterite and stannite polymorphs, which points to the role of (I$_\mathrm{II}$+II$_\mathrm{I}$) defect clusters involving Group IB and Group IIB atoms swapping across \textit{different} cation planes. This finding can explain why \textit{in-plane} cation disorder and band tailing are uncorrelated in kesterites. Our results provide quantitative criteria for discovering new kesterite-inspired photovoltaic materials with low band tailing.

physics.app-ph↗

arXiv2020

Water adsorption enhances electrical conductivity in transparent p-type CuI

CuI has been recently rediscovered as a p-type transparent conductor with a high figure of merit. Even though many metal iodides are hygroscopic, the effect of moisture on the electrical properties of CuI has not been clarified. In this work, we observe a two-fold increase in the conductivity of CuI after exposure to ambient humidity for 5 hours, followed by slight long-term degradation. Simultaneously, the work function of CuI decreases by almost 1 eV, which can explain the large spread in the previously reported work function values. The conductivity increase is partially reversible and is maximized at intermediate humidity levels. Based on the large intra-grain mobility measured by THz spectroscopy, we suggest that hydration of grain boundaries may be beneficial for the overall hole mobility.

physics.app-ph↗

arXiv2018

A general approach for the synthesis of two-dimensional binary compounds

Only a few of the vast range of potential two-dimensional materials have been isolated or synthesised to date. Typically, 2D materials are discovered by mechanically exfoliating naturally occurring bulk crystals to produce atomically thin layers, after which a material-specific vapour synthesis method must be developed to grow interesting candidates in a scalable manner. Here we show a general approach for synthesising thin layers of two-dimensional binary compounds. We apply the method to obtain high quality, epitaxial MoS2 films, and extend the principle to the synthesis of a wide range of other materials - both well-known and never-before isolated - including transition metal sulphides, selenides, tellurides, and nitrides. This approach greatly simplifies the synthesis of currently known materials, and provides a general framework for synthesising both predicted and unexpected new 2D compounds.

cond-mat.mtrl-sci↗

arXiv2018

Measuring complete band diagrams of non-ideal heterointerfaces by combining ellipsometry and photoemission spectroscopy

In this work, we show that spectroscopic ellipsometry can be combined with photoemission spectroscopy to obtain complete interface band diagrams of non-ideal semiconductor heterointerfaces, such as interfaces between thin-film polycrystalline materials. The non-destructive ellipsometry measurement probes the near-interface band gap of the two semiconductors (including the buried semiconductor) after the interface has formed. This is important in the non-ideal case where chemical processes during interface growth modify the electronic properties of the two separated surfaces. Knowledge of near-interface band gaps improves accuracy in conduction band offset measurements of non-ideal interfaces, and it sheds light on their device physics. Both of those positive outcomes are demonstrated in the Cu$_2$ZnSnS$_4$/CdS interface used here as a case study, where the band gap of both materials decreases by up to 200 meV from the bulk to the near-interface region. This finding reveals a preferential electron-hole recombination channel near the interface, and it yields corrected values for the interfacial conduction band offset.

physics.app-ph↗

arXiv2017

Interface band gap narrowing behind open circuit voltage losses in Cu$_2$ZnSnS$_4$ solar cells

We present evidence that band gap narrowing at the heterointerface may be a major cause of the large open circuit voltage deficit of Cu$_2$ZnSnS$_4$/CdS solar cells. Band gap narrowing is caused by surface states that extend the Cu$_2$ZnSnS$_4$ valence band into the forbidden gap. Those surface states are consistently found in Cu$_2$ZnSnS$_4$, but not in Cu$_2$ZnSnSe$_4$, by first-principles calculations. They do not simply arise from defects at surfaces but are an intrinsic feature of Cu$_2$ZnSnS$_4$ surfaces. By including those states in a device model, the outcome of previously published temperature-dependent open circuit voltage measurements on Cu$_2$ZnSnS$_4$ solar cells can be reproduced quantitatively without necessarily assuming a cliff-like conduction band offset with the CdS buffer layer. Our first-principles calculations indicate that Zn-based alternative buffer layers are advantageous due to the ability of Zn to passivate those surface states. Focusing future research on Zn-based buffers is expected to significantly improve the open circuit voltage and efficiency of pure-sulfide Cu$_2$ZnSnS$_4$ solar cells.

cond-mat.mes-hall↗