arXiv subjects

Andrea F. Young

Publications and source records attributed to Andrea F. Young.

At least 55 records · Page 3Linked to original sources

arXiv2021

Half and quarter metals in rhombohedral trilayer graphene

Ferromagnetism is most common in transition metal compounds but may also arise in low-density two-dimensional electron systems, with signatures observed in silicon, III-V semiconductor systems, and graphene moiré heterostructures. Here we show that gate-tuned van Hove singularities in rhombohedral trilayer graphene drive the spontaneous ferromagnetic polarization of the electron system into one or more spin- and valley flavors. Using capacitance measurements on graphite-gated van der Waals heterostructures, we find a cascade of density- and electronic displacement field tuned phase transitions marked by negative electronic compressibility. The transitions define the boundaries between phases where quantum oscillations have either four-fold, two-fold, or one-fold degeneracy, associated with a spin and valley degenerate normal metal, spin-polarized `half-metal', and spin and valley polarized `quarter metal', respectively. For electron doping, the salient features are well captured by a phenomenological Stoner model with a valley-anisotropic Hund's coupling, likely arising from interactions at the lattice scale. For hole filling, we observe a richer phase diagram featuring a delicate interplay of broken symmetries and transitions in the Fermi surface topology. Finally, by rotational alignment of a hexagonal boron nitride substrate to induce a moiré superlattice, we find that the superlattice perturbs the preexisting isospin order only weakly, leaving the basic phase diagram intact while catalyzing the formation of topologically nontrivial gapped states whenever itinerant half- or quarter metal states occur at half- or quarter superlattice band filling. Our results show that rhombohedral trilayer graphene is an ideal platform for well-controlled tests of many-body theory and reveal magnetism in moiré materials to be fundamentally itinerant in nature.

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arXiv2021

Topological charge density waves at half-integer filling of a moiré superlattice

At partial filling of a flat band, strong electronic interactions may favor gapped states harboring emergent topology with quantized Hall conductivity. Emergent topological states have been found in partially filled Landau levels and Hofstadter bands; in both cases, a large magnetic field is required to engineer the underlying flat band. The recent observation of quantum anomalous Hall effects (QAH) in narrow band moiré systems has led to the theoretical prediction that such phases may be realized even at zero magnetic field. Here we report the experimental observation of insulators with Chern number $C=1$ in the zero magnetic field limit at $ν=3/2$ and $7/2$ filling of the moiré superlattice unit cell in twisted monolayer-bilayer graphene (tMBG). Our observation of Chern insulators at half-integer values of $ν$ suggests spontaneous doubling of the superlattice unit cell, in addition to spin- and valley-ferromagnetism. This is confirmed by Hartree-Fock calculations, which find a topological charge density wave ground state at half filling of the underlying $C=2$ band, in which the Berry curvature is evenly partitioned between occupied and unoccupied states. We find the translation symmetry breaking order parameter is evenly distributed across the entire folded superlattice Brillouin zone, suggesting that the system is in the flat band, strongly correlated limit. Our findings show that the interplay of quantum geometry and Coulomb interactions in moiré bands allows for topological phases at fractional superlattice filling that spontaneously break time-reversal symmetry, a prerequisite in pursuit of zero magnetic field phases harboring fractional statistics as elementary excitations or bound to lattice dislocations.

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arXiv2021

Strong-Magnetic-Field Magnon Transport in Monolayer Graphene

At high magnetic fields, monolayer graphene hosts competing phases distinguished by their breaking of the approximate SU(4) isospin symmetry. Recent experiments have observed an even denominator fractional quantum Hall state thought to be associated with a transition in the underlying isospin order from a spin-singlet charge density wave at low magnetic fields to an antiferromagnet at high magnetic fields, implying that a similar transition must occur at charge neutrality. However, this transition does not generate contrast in typical electrical transport or thermodynamic measurements and no direct evidence for it has been reported, despite theoretical interest arising from its potentially unconventional nature. Here, we measure the transmission of ferromagnetic magnons through the two dimensional bulk of clean monolayer graphene. Using spin polarized fractional quantum Hall states as a benchmark, we find that magnon transmission is controlled by the detailed properties of the low-momentum spin waves in the intervening Hall fluid, which is highly density dependent. Remarkably, as the system is driven into the antiferromagnetic regime, robust magnon transmission is restored across a wide range of filling factors consistent with Pauli blocking of fractional quantum hall spin-wave excitations and their replacement by conventional ferromagnetic magnons confined to the minority graphene sublattice. Finally, using devices in which spin waves are launched directly into the insulating charge-neutral bulk, we directly detect the hidden phase transition between bulk insulating charge density wave and a canted antiferromagnetic phases at charge neutrality, completing the experimental map of broken-symmetry phases in monolayer graphene.

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arXiv2020

Electrical switching of magnetic order in an orbital Chern insulator

Magnetism typically arises from the joint effect of Fermi statistics and repulsive Coulomb interactions, which favors ground states with non-zero electron spin. As a result, controlling spin magnetism with electric fields---a longstanding technological goal in spintronics and multiferroics---can be achieved only indirectly. Here, we experimentally demonstrate direct electric field control of magnetic states in an orbital Chern insulator, a magnetic system in which non-trivial band topology favors long range order of orbital angular momentum but the spins are thought to remain disordered. We use van der Waals heterostructures consisting of a graphene monolayer rotationally faulted with respect to a Bernal-stacked bilayer to realize narrow and topologically nontrivial valley-projected moiré minibands. At fillings of one and three electrons per moiré unit cell within these bands, we observe quantized anomalous Hall effects with transverse resistance approximately equal to $h/2e^2$, which is indicative of spontaneous polarization of the system into a single-valley-projected band with a Chern number equal to two. At a filling of three electrons per moiré unit cell, we find that the sign of the quantum anomalous Hall effect can be reversed via field-effect control of the chemical potential; moreover, this transition is hysteretic, which we use to demonstrate nonvolatile electric field induced reversal of the magnetic state. A theoretical analysis indicates that the effect arises from the topological edge states, which drive a change in sign of the magnetization and thus a reversal in the favored magnetic state. Voltage control of magnetic states can be used to electrically pattern nonvolatile magnetic domain structures hosting chiral edge states, with applications ranging from reconfigurable microwave circuit elements to ultralow power magnetic memory.

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arXiv2020

Isospin Pomeranchuk effect and the entropy of collective excitations in twisted bilayer graphene

In condensed matter systems, higher temperatures typically disfavors ordered phases leading to an upper critical temperature for magnetism, superconductivity, and other phenomena. A notable exception is the Pomeranchuk effect in 3He, in which the liquid ground state freezes upon increasing the temperature due to the large entropy of the paramagnetic solid phase. Here we show that a similar mechanism describes the finite temperature dynamics of spin and valley-isospins in magic-angle twisted bilayer graphene. Most strikingly a resistivity peak appears at high temperatures near superlattice filling factor nu = -1, despite no signs of a commensurate correlated phase appearing in the low-temperature limit. Tilted field magnetotransport and thermodynamic measurements of the inplane magnetic moment show that the resistivity peak is adiabatically connected to a finite-field magnetic phase transition at which the system develops finite isospin polarization. These data are suggestive of a Pomeranchuk-type mechanism, in which the entropy of disordered isospin moments in the ferromagnetic phase stabilizes it relative to an isospin unpolarized Fermi liquid phase at elevated temperatures. Measurements of the entropy, S/kB indeed find it to be of order unity per unit cell area, with a measurable fraction that is suppressed by an in-plane magnetic field consistent with a contribution from disordered physical spins. In contrast to 3He, however, no discontinuities are observed in the thermodynamic quantities across this transition. Our findings imply a small isospin stiffness, with implications for the nature of finite temperature transport as well as the mechanisms underlying isospin ordering and superconductivity in twisted bilayer graphene and related systems.

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arXiv2020

Current distribution in a slit connecting two graphene half-planes

We investigate the joint effect of viscous and Ohmic dissipation on electric current flow through a slit in a barrier dividing a graphene sheet in two. In the case of the no-slip boundary condition, we find that the competition between the viscous and Ohmic types of the charge flow results in the evolution of the current density profile from a concave to convex shape. We provide a detailed analysis of the evolution and identify favorable conditions to observe it in experiment. In contrast, in the case of the no-stress boundary condition, there is no qualitative difference between the current profiles in the Ohmic and viscous limits. The dichotomy between the behavior corresponding to distinct boundary conditions could be tested experimentally.

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arXiv2020

Hofstadter subband ferromagnetism and symmetry broken Chern insulators in twisted bilayer graphene

In bilayer graphene rotationally faulted to theta=1.1 degrees, interlayer tunneling and rotational misalignment conspire to create a pair of low energy flat band that have been found to host various correlated phenomena at partial filling. Most work to date has focused on the zero magnetic field phase diagram, with magnetic field (B) used as a probe of the B=0 band structure. Here, we show that twisted bilayer graphene (tBLG) in a B as low as 2T hosts a cascade of ferromagnetic Chern insulators with Chern number |C|=1,2 and 3. We argue that the emergence of the Chern insulators is driven by the interplay of the moire superlattice with the B, which endow the flat bands with a substructure of topologically nontrivial subbands characteristic of the Hofstadter butterfly. The new phases can be accounted for in a Stoner picture in which exchange interactions favor polarization into one or more spin- and valley-isospin flavors; in contrast to conventional quantum Hall ferromagnets, however, electrons polarize into between one and four copies of a single Hofstadter subband with Chern number C=-1. In the case of the C=\pm3 insulators in particular, B catalyzes a first order phase transition from the spin- and valley-unpolarized B=0 state into the ferromagnetic state. Distinct from other moire heterostructures, tBLG realizes the strong-lattice limit of the Hofstadter problem and hosts Coulomb interactions that are comparable to the full bandwidth W and are consequently much stronger than the width of the individual Hofstadter subbands. In our experimental data, the dominance of Coulomb interactions manifests through the appearance of Chern insulating states with spontaneously broken superlattice symmetry at half filling of a C=-2 subband. Our experiments show that that tBLG may be an ideal venue to explore the strong interaction limit within partially filled Hofstadter bands.

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arXiv2020

Experimental determination of the energy per particle in partially filled Landau levels

We describe an experimental technique to measure the chemical potential, $μ$, in atomically thin layered materials with high sensitivity and in the static limit. We apply the technique to a high quality graphene monolayer to map out the evolution of $μ$ with carrier density throughout the N=0 and N=1 Landau levels at high magnetic field. By integrating $μ$ over filling factor, $ν$, we obtain the ground state energy per particle, which can be directly compared with numerical calculations. In the N=0 Landau level, our data show exceptional agreement with numerical calculations over the whole Landau level without adjustable parameters, as long as the screening of the Coulomb interaction by the filled Landau levels is accounted for. In the N=1 Landau level, comparison between experimental and numerical data reveals the importance of valley anisotropic interactions and the presence of valley-textured electron solids near odd filling.

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arXiv2020

On-chip terahertz modulation and emission with integrated graphene junctions

The efficient modulation and control of ultrafast signals on-chip is of central importance in terahertz (THz) communications and a promising route toward sub-diffraction limit THz spectroscopy. Two-dimensional (2D) materials may provide a platform for these endeavors. We explore this potential, integrating high-quality graphene p-n junctions within two types of planar transmission line circuits to modulate and emit picosecond pulses. In a coplanar stripline geometry, we demonstrate electrical modulation of THz signal transmission by 95%. In a Goubau waveguide geometry, we achieve complete gate-tunable control over THz emission from a photoexcited graphene junction. These studies inform the development of on-chip signal manipulation and highlight prospects for 2D materials in THz applications.

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arXiv2019

Decoupling superconductivity and correlated insulators in twisted bilayer graphene

When bilayer graphene is rotationally faulted to an angle $θ\approx 1.1^\circ$, theory predicts the formation of a flat electronic band and correlated insulating, superconducting, and ferromagnetic states have all been observed at partial band filling. The proximity of superconductivity to correlated insulators has suggested a close relationship between these states, reminiscent of the cuprates where superconductivity arises by doping a Mott insulator. Here, we show that superconductivity can appear without correlated insulating states. While both superconductivity and correlated insulating behavior are strongest near the flat band condition, superconductivity survives to larger detuning of the angle. Our observations are consistent with a "competing phases" picture, in which insulators and superconductivity arise from disparate mechanisms.

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arXiv2019

Skyrmion solids in monolayer graphene

Partially filled Landau levels host competing orders, with electron solids prevailing close to integer fillings before giving way to fractional quantum Hall liquids as the Landau level fills. Here, we report the observation of an electron solid with noncolinear spin texture in monolayer graphene, consistent with solidification of skyrmions---topological spin textures characterized by quantized electrical charge. In electrical transport, electron solids reveal themselves through a rapid metal-insulator transition in the bulk electrical conductivity as the temperature is lowered, accompanied by the emergence of strongly nonlinear dependence on the applied bias voltage. We probe the spin texture of the solids using a modified Corbino geometry that allows ferromagnetic magnons to be launched and detected. We find that magnon transport is highly efficient when one Landau level is filled ($ν=1$), consistent with quantum Hall ferromagnetic spin polarization; however, even minimal doping immediately quenches the the magnon signal while leaving the vanishing low-temperature charge conductivity unchanged. Our results can be understood by the formation of a solid of charged skyrmions near $ν=1$, whose noncolinear spin texture leads to rapid magnon decay. Data near fractional fillings further shows evidence for several fractional skyrmion crystals, suggesting that graphene hosts a vast and highly tunable landscape of coupled spin and charge orders.

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arXiv2018

Fractional Chern insulator edges and layer-resolved lattice contacts

Fractional Chern insulators (FCIs) realized in fractional quantum Hall systems subject to a periodic potential are topological phases of matter for which space group symmetries play an important role. In particular, lattice dislocations in an FCI can host topology-altering non-Abelian topological defects, known as genons. Genons are of particular interest for their potential application to topological quantum computing. In this work, we study FCI edges and how they can be used to detect genons. We find that translation symmetry can impose a quantized momentum difference between the edge electrons of a partially-filled Chern band. We propose {\it layer-resolved lattice contacts}, which utilize this momentum difference to selectively contact a particular FCI edge electron. The relative current between FCI edge electrons can then be used to detect the presence of genons in the bulk FCI. Recent experiments have demonstrated graphene is a viable platform to study FCI physics. We describe how the lattice contacts proposed here could be implemented in graphene subject to an artificial lattice, thereby outlining a path forward for experimental dectection of non-Abelian topological defects.

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arXiv2018

Quantitative transport measurements of fractional quantum Hall energy gaps in edgeless graphene devices

Owing to their wide tunability, spin- and valley internal degrees of freedom, and low disorder, graphene heterostructures are emerging as a promising experimental platform for fractional quantum Hall (FQH) studies. Surprisingly, however, transport measurements reveal many fewer FQH states than bulk capacitive probes. Here, we report the fabrication of dual graphite-gated monolayer graphene devices in an edgeless Corbino-type geometry that showing deep FQH sequences. Thermal activation gaps reveal a tunable crossover between single- and multi-component FQH states in the zero energy Landau level, while the first Landau level is found to host an unexpected valley-ordered state at $ν=-4$.

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arXiv2018

Tuning superconductivity in twisted bilayer graphene

Materials with flat electronic bands often exhibit exotic quantum phenomena owing to strong correlations. Remarkably, an isolated low-energy flat band can be induced in bilayer graphene by simply rotating the layers to 1.1$^{\circ}$, resulting in the appearance of gate-tunable superconducting and correlated insulating phases. Here, we demonstrate that in addition to the twist angle, the interlayer coupling can also be modified to precisely tune these phases. We establish the capability to induce superconductivity at a twist angle larger than 1.1$^{\circ}$ $-$ in which correlated phases are otherwise absent $-$ by varying the interlayer spacing with hydrostatic pressure. Realizing devices with low disorder additionally reveals new details about the superconducting phase diagram and its relationship to the nearby insulator. Our results demonstrate twisted bilayer graphene to be a uniquely tunable platform for exploring novel correlated states.

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arXiv2018

Emergent Dirac gullies and gully-symmetry breaking quantum Hall states in ABA trilayer graphene

We report on quantum capacitance measurements of high quality, graphite- and hexagonal boron nitride encapsulated Bernal stacked trilayer graphene devices. At zero applied magnetic field, we observe a number of electron density- and electrical displacement-tuned features in the electronic compressibility associated with changes in Fermi surface topology. At high displacement field and low density, strong trigonal warping gives rise to emergent Dirac gullies centered near the corners of the hexagonal Brillouin and related by three fold rotation symmetry. At low magnetic fields of $B=1.25$~T, the gullies manifest as a change in the degeneracy of the Landau levels from two to three. Weak incompressible states are also observed at integer filling within these triplets Landau levels, which a Hartree-Fock analysis indicates are associated with Coulomb-driven nematic phases that spontaneously break rotation symmetry.

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arXiv2017

Observation of fractional Chern insulators in a van der Waals heterostructure

Topologically ordered phases are characterized by long-range quantum entanglement and fractional statistics rather than by symmetry breaking. First observed in a fractionally filled continuum Landau level, topological order has since been proposed to arise more generally at fractional filling of topologically non-trivial "Chern" bands. Here, we report the observation of gapped states at fractional filling of Harper-Hofstadter bands arising from the interplay of a magnetic field and a superlattice potential in a bilayer graphene/hexagonal boron nitride heterostructure. We observe new phases at fractional filling of bands with Chern indices $\mathcal{C} = -1, \pm 2,$ and $\pm 3$. Some of these, in $\mathcal{C}=-1$ and $\mathcal{C}=2$ bands, are characterized by fractional Hall conductance---they are `fractional Chern insulators' and constitute a new example of topological order beyond Landau levels.

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arXiv2017

Robust fractional quantum Hall states and continuous quantum phase transitions in a half-filled bilayer graphene Landau level

Nonabelian anyons offer the prospect of storing quantum information in a topological qubit protected from decoherence, with the degree of protection determined by the energy gap separating the topological vacuum from its low lying excitations. Originally proposed to occur in quantum wells in high magnetic fields, experimental systems thought to harbor nonabelian anyons range from p-wave superfluids to superconducting systems with strong spin orbit coupling. However, all of these systems are characterized by small energy gaps, and despite several decades of experimental work, definitive evidence for nonabelian anyons remains elusive. Here, we report the observation of arobust, incompressible even-denominator fractional quantum Hall phase in a new generation of dual-gated, hexagonal boron nitride encapsulated bilayer graphene samples. Numerical simulations suggest that this state is in the Pfaffian phase and hosts nonabelian anyons, and the measured energy gaps are several times larger than those observed in other systems. Moreover, the unique electronic structure of bilayer graphene endows the electron system with two new control parameters. Magnetic field continuously tunes the effective electron interactions, changing the even-denominator gap non-monotonically and consistent with predictions that a transition between the Pfaffian phase and the composite Fermi liquid (CFL) occurs just beyond the experimentally explored magnetic field range. Electric field, meanwhile, tunes crossings between levels from different valleys. By directly measuring the valley polarization, we observe a continuous transition from an incompressible to a compressible phase at half-filling mediated by an unexpected incompressible, yet polarizable, intermediate phase. Valley conservation implies this phase is an electrical insulator with gapless neutral excitations.

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arXiv2016

Tuning ultrafast electron thermalization pathways in a van der Waals heterostructure

Ultrafast electron thermalization - the process leading to Auger recombination, carrier multiplication via impact ionization and hot carrier luminescence - occurs when optically excited electrons in a material undergo rapid electron-electron scattering to redistribute excess energy and reach electronic thermal equilibrium. Due to extremely short time and length scales, the measurement and manipulation of electron thermalization in nanoscale devices remains challenging even with the most advanced ultrafast laser techniques. Here, we overcome this challenge by leveraging the atomic thinness of two-dimensional van der Waals (vdW) materials in order to introduce a highly tunable electron transfer pathway that directly competes with electron thermalization. We realize this scheme in a graphene-boron nitride-graphene (G-BN-G) vdW heterostructure, through which optically excited carriers are transported from one graphene layer to the other. By applying an interlayer bias voltage or varying the excitation photon energy, interlayer carrier transport can be controlled to occur faster or slower than the intralayer scattering events, thus effectively tuning the electron thermalization pathways in graphene. Our findings, which demonstrate a novel means to probe and directly modulate electron energy transport in nanoscale materials, represent an important step toward designing and implementing novel optoelectronic and energy-harvesting devices with tailored microscopic properties.

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