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Andrea Rossetti

Publications and source records attributed to Andrea Rossetti.

4 recordsLinked to original sources

Plasmonic-cavity Modulator for the Mid-IR with a Semi-transparent and Nonlinear Heavily-doped Semiconductor Mirror

We present a free-space plasmonic modulator based on a single heavily-doped semiconductor layer. We investigate its ability to modulate both the linear and nonlinear response at mid-infrared frequencies slightly below the plasma frequency of the semiconductor. We demonstrate electric control of the linear transmittance and reflectance, and of the efficiency of third-harmonic generation with a field-effect gate structure. We discuss further performance optimization of the device in terms of modulation speed and depth towards a fast modulator with very simple active material requirements. Our results establish a viable route toward practical plasmonic modulators and mixers operating in the mid-infrared atmospheric window available for free-space communications at wavelengths between 8 and 12 um.

physics.optics

Modulation of sub-optical cycle photocurrents in an ultrafast near-infrared scanning tunnelling microscope

Lightwave-driven scanning tunnelling microscopy (STM) at near-IR frequencies promises an unprecedented combination of atomic spatial resolution and temporal resolution approaching the attosecond range. To achieve this goal, high-sensitivity optical control and detection of sub-cycle tunnelling currents must be achieved at the STM junction. Here, we demonstrate the generation and detection of coherent ultrafast currents across the junction of an STM illuminated by near-infrared single-cycle pulses. We introduce a novel modulation scheme that avoids time-dependent thermal loading while selectively isolating carrier-envelope phase (CEP)-dependent photocurrents. All artifacts arising from periodic modulation of laser power and thermal coupling are efficiently suppressed, enabling a clean readout of the coherent portion of the ultrafast tunneling current.

physics.optics

Anomalous frequency scaling of acoustic phonon damping in nickel cavities fabricated by ps-laser delamination

Single-shot picosecond (ps) laser induced delamination allows for the direct generation of suspended membranes from a continuous metallic film, offering a promising platform for control of ultrafast magnetization dynamics driven by acoustic waves. Using the picosecond-ultrasonics method, we demonstrate that long-lived low-frequency acoustic waves can be optically-excited in the delaminated cavities. At the same time, higher-frequency modes >60GHz exhibit a surprisingly fast damping, following a scaling law incompatible with the expected attenuation mediated by phonon-phonon scattering. Comparing measurements between delaminated cavities and a benchmark nickel film in contact with the substrate, we link our findings with structural modifications of the nickel crystal induced by the delamination process.

cond-mat.mtrl-sci

Origin of optical nonlinearity in plasmonic semiconductor nanostructures

The development of nanoscale nonlinear elements in photonic integrated circuits is hindered by the physical limits to the nonlinear optical response of dielectrics, which requires that the interacting waves propagate in transparent volumes for distances much longer than their wavelength. Here we present experimental evidence that optical nonlinearities in doped semiconductors are due to free-electron and their efficiency could exceed by several orders of magnitude that of conventional dielectric nonlinearities. Our experimental findings are supported by comprehensive computational results based on the hydrodynamic modeling, which naturally includes nonlocal effects, of the free-electron dynamics in heavily doped semiconductors. By studying third-harmonic generation from plasmonic nanoantenna arrays made out of heavily n-doped InGaAs with increasing levels of free-carrier density, we discriminate between hydrodynamic and dielectric nonlinearities. As a result, the value of maximum nonlinear efficiency as well as its spectral location can now be controlled by tuning the doping level. Having employed the common material platform InGaAs/InP that supports integrated waveguides, our findings pave the way for future exploitation of plasmonic nonlinearities in all-semiconductor photonic integrated circuits.

physics.optics