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Andreas Boes

Publications and source records attributed to Andreas Boes.

30 records · Page 2Linked to original sources

Single photonic perceptron based on a soliton crystal Kerr microcomb for high-speed, scalable, optical neural networks

Optical artificial neural networks (ONNs), analog computing hardware tailored for machine learning, have significant potential for ultra-high computing speed and energy efficiency. We propose a new approach to architectures for ONNs based on integrated Kerr micro-comb sources that is programmable, highly scalable and capable of reaching ultra-high speeds. We experimentally demonstrate the building block of the ONN, a single neuron perceptron, by mapping synapses onto 49 wavelengths of a micro-comb to achieve a high single-unit throughput of 11.9 Giga-FLOPS at 8 bits per FLOP, corresponding to 95.2 Gbps. We test the perceptron on simple standard benchmark datasets, handwritten-digit recognition and cancer-cell detection, achieving over 90% and 85% accuracy, respectively. This performance is a direct result of the record small wavelength spacing (49GHz) for a coherent integrated microcomb source, which results in an unprecedented number of wavelengths for neuromorphic optics. Finally, we propose an approach to scaling the perceptron to a deep learning network using the same single micro-comb device and standard off-the-shelf telecommunications technology, for high-throughput operation involving full matrix multiplication for applications such as real-time massive data processing for unmanned vehicle and aircraft tracking.

physics.optics↗

Optical data transmission at 44Tb/s and 10 bits/s/Hz over the C-band with standard fibre and a single micro-comb source

Micro-combs [1 - 4], optical frequency combs generated by integrated micro-cavity resonators, offer the full potential of their bulk counterparts [5,6], but in an integrated footprint. The discovery of temporal soliton states (DKS dissipative Kerr solitons) [4,7-11] as a means of modelocking microcombs has enabled breakthroughs in many fields including spectroscopy [12,13], microwave photonics [14], frequency synthesis [15], optical ranging [16,17], quantum sources [18,19], metrology [20,21] and more. One of their most promising applications has been optical fibre communications where they have enabled massively parallel ultrahigh capacity multiplexed data transmission [22,23]. Here, by using a new and powerful class of microcomb called soliton crystals [11], we achieve unprecedented data transmission over standard optical fibre using a single integrated chip source. We demonstrate a line rate of 44.2 Terabits per second using the telecommunications C band at 1550nm with a spectral efficiency, a critically important performance metric, of 10.4 bits/s/Hz. Soliton crystals exhibit robust and stable generation and operation as well as a high intrinsic efficiency that, together with a low soliton microcomb spacing of 48.9 GHz enable the use of a very high coherent data modulation format of 64 QAM (quadrature amplitude modulated). We demonstrate error free transmission over 75 km of standard optical fibre in the laboratory as well as in a field trial over an installed metropolitan optical fibre network. These experiments were greatly aided by the ability of the soliton crystals to operate without stabilization or feedback control. This work demonstrates the capability of optical soliton crystal microcombs to perform in demanding and practical optical communications networks.

physics.app-ph↗

Optical Kerr soliton crystal microcomb source for RF photonic fractional differentiation

We report a photonic radio frequency (RF) fractional differentiator based on an integrated Kerr micro-comb source. The micro-comb source has a free spectral range (FSR) of 49 GHz, generating a large number of comb lines that serve as a high-performance multi-wavelength source for the differentiator. By programming and shaping the comb lines according to calculated tap weights, arbitrary fractional orders ranging from 0.15 to 0.90 are achieved over a broad RF operation bandwidth of 15.49 GHz. We experimentally characterize the frequency-domain RF amplitude and phase responses as well as the temporal responses with a Gaussian pulse input. The experimental results show good agreement with theory, confirming the effectiveness of our approach towards high-performance fractional differentiators featuring broad processing bandwidth, high reconfigurability, and potentially greatly reduced size and cost.

physics.app-ph↗

Ridge Resonance: A new Resonance Phenomenon for Silicon Photonics Harnessing Bound States in the Continuum

We present a new resonant behavior based on bound states in the continuum in a guided wave silicon platform. The continuum has the form of a collimated beam of light which is confined vertically in a TE mode of a silicon slab. The bound state is a discrete TM mode of a ridge on the silicon slab. The coupling between the slab and ridge modes results in a single sharp resonance at the wavelength where they phase match. We experimentally demonstrate this phenomenon on a silicon photonic chip using foundry compatible parameters and interface it on-chip to standard single mode silicon nanowire waveguides. The fabricated chip exhibits a single sharp resonance near 1550 nm with a line width of a few nanometer, an extinction ratio of 25 dB and a thermal stability of 19.5 pm/C. We believe that this is the first demonstration of bound states in the continuum resonance realized using guided wave components.

physics.optics↗

Microwave photonic fractional Hilbert transformer with an integrated optical soliton crystal micro-comb

We report a photonic microwave and RF fractional Hilbert transformer based on an integrated Kerr micro-comb source. The micro-comb source has a free spectral range (FSR) of 50GHz, generating a large number of comb lines that serve as a high-performance multi-wavelength source for the transformer. By programming and shaping the comb lines according to calculated tap weights, we achieve both arbitrary fractional orders and a broad operation bandwidth. We experimentally characterize the RF amplitude and phase response for different fractional orders and perform system demonstrations of real-time fractional Hilbert transforms. We achieve a phase ripple of < 0.15 rad within the 3-dB pass-band, with bandwidths ranging from 5 to 9 octaves, depending on the order. The experimental results show good agreement with theory, confirming the effectiveness of our approach as a new way to implement high-performance fractional Hilbert transformers with broad processing bandwidth, high reconfigurability, and greatly reduced size and complexity.

physics.app-ph↗

Ultra-efficient frequency comb generation in AlGaAs-on-insulator microresonators

Recent advances in nonlinear optics have revolutionized the area of integrated photonics, providing on-chip solutions to a wide range of new applications. Currently, the state of the art integrated nonlinear photonic devices are mainly based on dielectric material platforms, such as Si3N4 and SiO2. While semiconductor materials hold much higher nonlinear coefficients and convenience in active integration, they suffered in the past from high waveguide losses that prevented the realization of highly efficient nonlinear processes on-chip. Here we challenge this status quo and demonstrate an ultra-low loss AlGaAs-on-insulator (AlGaAsOI) platform with anomalous dispersion and quality (Q) factors beyond 1.5*10^6. Such a high quality factor, combined with the high nonlinear coefficient and the small mode volume, enabled us to demonstrate a record low Kerr frequency comb generation threshold of ~36 uW for a resonator with a 1 THz free spectral range (FSR), ~100 times lower compared to that in previous semiconductor platform. Combs with >250 nm broad span have been generated under a pump power lower than the threshold power of state of the art dielectric micro combs. A soliton-step transition has also been observed for the first time from an AlGaAs resonator. This work is an important step towards ultra-efficient semiconductor-based nonlinear photonics and will lead to fully integrated nonlinear photonic integrated circuits (PICs) in near future.

physics.optics↗

Improved second harmonic performance in periodically poled LNOI waveguides through engineering of lateral leakage

In this contribution we investigate the impact of lateral leakage for linear and nonlinear optical waveguides in lithium niobate on insulator (LNOI). Silicon nitride (SiN) loaded and direct patterned lithium niobate cross-sections are investigated. We show that lateral leakage can take place for the TE mode in LNOI ridge waveguides (X-cut lithium niobate), due to the birefringence of the material. This work gives guidelines for designing waveguides in LNOI that do not suffer from the lateral leakage effect. By applying these design considerations, we avoided the lateral leakage effect at the second harmonic wavelength of a nonlinear optical waveguide in LNOI and demonstrate a peak second harmonic generation conversion efficiency of ~1160% W-1cm-2.

physics.optics↗

Ferroelectric driven exciton and trion modulation in monolayer MoSe2 and WSe2

In this work, we show how domain engineered lithium niobate can be used to selectively dope monolayer MoSe2 and WSe2 and demonstrate that these ferroelectric domains can significantly enhance or inhibit photoluminescence (PL) with the most dramatic modulation occurring at the heterojunction interface between two domains. A micro-PL and Raman system is used to obtain spatially resolved images of the differently doped transition metal dichalcogenides (TMDs). The domain inverted lithium niobate causes changes in the TMDs due to electrostatic doping as a result of the remnant polarization from the substrate. Moreover, the differently doped TMDs (n-type MoSe2 and p-type WSe2) exhibit opposite PL modulation. Distinct oppositely charged domains were obtained with a 9-fold PL enhancement for the same single MoSe2 sheet when adhered to the positive (P+) and negative (P-) domains. This sharp PL modulation on the ferroelectric domain results from different free electron or hole concentrations in the materials conduction band or valence band. Moreover, excitons dissociate rapidly at the interface between the P+ and P- domains due to the built-in electric field. We are able to adjust the charge on the P+ and P- domains using temperature via the pyroelectric effect and observe rapid PL quenching over a narrow temperature range illustrating the observed PL modulation is electronic in nature. This observation creates an opportunity to harness the direct bandgap TMD 2D materials as an active optical component for the lithium niobate platform using domain engineering of the lithium niobate substrate to create optically active heterostructures that could be used for photodetectors or even electrically driven optical sources on-chip.

cond-mat.mtrl-sci↗

Atomically-thin quantum dots integrated with lithium niobate photonic chips

The electro-optic, acousto-optic and nonlinear properties of lithium niobate make it a highly versatile material platform for integrated quantum photonic circuits. A prerequisite for quantum technology applications is the ability to efficiently integrate single photon sources, and to guide the generated photons through ad-hoc circuits. Here we report the integration of quantum dots in monolayer WSe2 into a Ti in-diffused lithium niobate directional coupler. We investigate the coupling of individual quantum dots to the waveguide mode, their spatial overlap, and the overall efficiency of the hybrid-integrated photonic circuit.

physics.app-ph↗

Heterogeneously integrated GaAs waveguides on insulator for efficient frequency conversion

Tremendous scientific progress has been achieved through the development of nonlinear integrated photonics. Prominent examples are Kerr-frequency-comb generation in micro-resonators, and supercontinuum generation and frequency conversion in nonlinear photonic waveguides. High conversion efficiency is enabling for applications of nonlinear optics, including such broad directions as high-speed optical signal processing, metrology, and quantum communication and computation. In this work, we demonstrate a gallium-arsenide-on-insulator (GaAs) platform for nonlinear photonics. GaAs has among the highest second- and third-order nonlinear optical coefficients, and use of a silica cladding results in waveguides with a large refractive index contrast and low propagation loss for expanded design of nonlinear processes. By harnessing these properties and developing nanofabrication with GaAs, we report a record normalized second-harmonic efficiency of 13,000% W-1cm-2 at a fundamental wavelength of 2 um. This work paves the way for high performance nonlinear photonic integrated circuits (PICs), which not only can transition advanced functionalities outside the lab through fundamentally reduced power consumption and footprint, but also enables future optical sources and detectors.

physics.optics↗

Direct characterization of a nonlinear photonic circuit's wave function with laser light

Integrated photonics is a leading platform for quantum technologies including nonclassical state generation \cite{Vergyris:2016-35975:SRP, Solntsev:2014-31007:PRX, Silverstone:2014-104:NPHOT, Solntsev:2016:RPH}, demonstration of quantum computational complexity \cite{Lamitral_NJP2016} and secure quantum communications \cite{Zhang:2014-130501:PRL}. As photonic circuits grow in complexity, full quantum tomography becomes impractical, and therefore an efficient method for their characterization \cite{Lobino:2008-563:SCI, Rahimi-Keshari:2011-13006:NJP} is essential. Here we propose and demonstrate a fast, reliable method for reconstructing the two-photon state produced by an arbitrary quadratically nonlinear optical circuit. By establishing a rigorous correspondence between the generated quantum state and classical sum-frequency generation measurements from laser light, we overcome the limitations of previous approaches for lossy multimode devices \cite{Liscidini:2013-193602:PRL, Helt:2015-1460:OL}. We applied this protocol to a multi-channel nonlinear waveguide network, and measured a 99.28$\pm$0.31\% fidelity between classical and quantum characterization. This technique enables fast and precise evaluation of nonlinear quantum photonic networks, a crucial step towards complex, large-scale, device production.

quant-ph↗

Frequency conversion between UV and telecom wavelengths in a lithium niobate waveguide for quantum communication with Yb+ trapped ions

We study and demonstrate the frequency conversion of UV radiation, resonant with 369.5 nm transition in Yb+ ions to the C-band wavelength 1580.3 nm and vice-versa using a reverse proton-exchanged waveguide in periodically poled lithium niobate. Our integrated device can interface trapped Yb+ ions with telecom infrastructure for the realization of an Yb+ based quantum repeater protocol and to efficiently distribute entanglement over long distances. We analyse the single photon frequency conversion efficiency from the 369.525 nm to the telecom wavelength and its dependence on pump power, device length and temperature. The single-photon noise generated by spontaneous Raman scattering of the pump is also measured. From this analysis we estimate a single photon conversion efficiency of 9% is achievable with our technology with almost complete suppression of the Raman noise.

physics.optics↗