arXiv subjects

Andreas Dietrich

Publications and source records attributed to Andreas Dietrich.

7 recordsLinked to original sources

arXiv2022

What Matters to Individual Investors: Price Setting in Online Auctions of P2P Consumer Loans

We analyze how retail investors price the credit risk of online P"P consumer loans in a reverse auction framework where personal interaction is absent. The explained interest rate variance is considerably larger than in comparable studies using bank loan data. This is unexpected, given the difference in experience and the limited set of information provided to the investor. Factors representing economic status significantly influence lender evaluations of the borrower's credit risk. Previous studies on gender discrimination found mixed results. We show that this is likely due to simplified specifications and find surprising results: male borrowers are charged a higher interest rates, conditional on being married and having children. Overall, our results indicate that retail investors exhibit a strong degree of predictability in this weakly regulated market for online P2P consumer loans.

q-fin.GN↗

arXiv2020

Mechanical Decoupling of Quantum Emitters in Hexagonal Boron Nitride from Low-Energy Phonon Modes

Quantum emitters in hexagonal Boron Nitride (hBN) were recently reported to hol a homogeneous linewidth according to the Fourier-Transform limit up to room temperature. This unusual observation was traced back to decoupling from in-plane phonon modes which can arise if the emitter is located between two planes of the hBN host material. In this work, we investigate the origins for the mechanical decoupling. Improved sample preparation enabled a reduced background and a 70-fold decrease of spectral diffusion which was so far the major drawback of defect center in hBN and allowed us to reveal a gap in the electron-phonon spectral density for low phonon frequencies. This decoupling from phonons persists at room temperature and explains the observed Fourier Transform limited lines up to 300K. Furthermore, we investigate the dipole emission directionality and show a preferred photon emission through the side of the hBN flakes supporting the claim for an out-of-plane distortion of the defect center. Our work lays the foundation to a deeper understanding of the underlying physics for the persistence of Fourier-Transform limit lines up to room temperature. It furthermore provides a description on how to identify the mechanically isolated emitter within the large number of defect centers in hBN. Therefore, it paves the way for quantum optics applications with defect centers in hBN at room temperature.

cond-mat.mes-hall↗

arXiv2019

A Diamond-Photonics Platform Based on Silicon-Vacancy Centers in a Single Crystal Diamond Membrane and a Fiber-Cavity

We realize a potential platform for an efficient spin-photon interface, namely negatively-charged silicon-vacancy centers in a diamond membrane coupled to the mode of a fully-tunable, fiber-based, optical resonator. We demonstrate that introducing the thin ($\sim 200 \, \text{nm}$), single crystal diamond membrane into the mode of the resonator does not change the cavity properties, which is one of the crucial points for an efficient spin-photon interface. In particular, we observe constantly high Finesse values of up to $3000$ and a linear dispersion in the presence of the membrane. We observe cavity-coupled fluorescence froman ensemble of SiV$^{-}$ centers with an enhancement factor of $\sim 1.9$. Furthermore from our investigations we extract the ensemble absorption and extrapolate an absorption cross section of $(2.9 \, \pm \, 2) \, \cdot \, 10^{-12} \, \text{cm}^{2}$ for a single SiV$^{-}$ center, much higher than previously reported.

physics.app-ph↗

arXiv2017

Photoluminescence excitation spectroscopy of SiV$^{-}$ and GeV$^{-}$ color center in diamond

Color centers in diamond are important quantum emitters for a broad range of applications ranging from quantum sensing to quantum optics. Understanding the internal energy level structure is of fundamental importance for future applications. We experimentally investigate the level structure of an ensemble of few negatively charged silicon-vacancy (SiV$^{-}$) and germanium-vacancy (GeV$^{-}$) centers in bulk diamond at room temperature by photoluminescence (PL) and excitation (PLE) spectroscopy over a broad wavelength range from 460 nm to 650 nm and perform power-dependent saturation measurements. For SiV$^{-}$ our experimental results confirm the presence of a higher energy transition at ~ 2.31 eV. By comparison with detailed theoretical simulations of the imaginary dielectric function we interpret the transition as a dipole-allowed transition from $^{2}E_{g}$-state to $^{2}A_{2u}$-state where the corresponding $a_{2u}$-level lies deeply inside the diamond valence band. Therefore, the transition is broadened by the diamond band. At higher excitation power of 10 mW we indicate signs of a parity-conserving transition at ~2.03 eV supported by saturation measurements. For GeV$^{-}$ we demonstrate that the PLE spectrum is in good agreement with the mirror image of the PL spectrum of the zero-phonon line (ZPL). Experimentally we do not observe a higher lying energy level up to a transition wavelength of 460 nm. The observed PL spectra are identical, independent of excitation wavelength, suggesting a rapid decay to $^{2}E_{u}$ excited state and followed by optical transition to $^{2}E_{g}$ ground state. Our investigations convey important insights for future quantum optics and quantum sensing experiments based on SiV$^{-}$ center and GeV$^{-}$ center in diamond.

cond-mat.mtrl-sci↗

arXiv2014

Isotopically varying spectral features of silicon vacancy in diamond

The silicon-vacancy centre (SiV) in diamond has interesting vibronic features. We demonstrate that the zero phonon line position can be used to reliably identify the silicon isotope present in a single centre. This is of interest for quantum information applications since only the silicon 29 isotope has nuclear spin. In addition, we demonstrate that the 64 meV line is due to a local vibrational mode of the silicon atom. The presence of a local mode suggests a plausible origin of the isotopic shift of the zero phonon line.

cond-mat.mtrl-sci↗

arXiv2014

Electronic structure of the negatively-charged silicon-vacancy center in diamond

The negatively-charged silicon-vacancy (SiV$^-$) center in diamond is a promising single photon source for quantum communications and information processing. However, the center's implementation in such quantum technologies is hindered by contention surrounding its fundamental properties. Here we present optical polarization measurements of single centers in bulk diamond that resolve this state of contention and establish that the center has a $\langle111\rangle$ aligned split-vacancy structure with $D_{3d}$ symmetry. Furthermore, we identify an additional electronic level and evidence for the presence of dynamic Jahn-Teller effects in the center's 738 nm optical resonance.

cond-mat.mtrl-sci↗

arXiv2004

Homogeneous shear turbulence

The addition of suitable volume forces to the Navier-Stokes equation allows to simulate flows in the presence of a homogeneous shear. Because of the explicit form of the driving the flows are accessible to rigorous mathematical treatment and to accurate quantitative modelling in their global properties. The statistics of the fluctuations provide insight into generic behaviour of non-equilibrium systems and into the presistence of anisotropies at small scales. Correlation functions can be used to identify dominant large scale dynamical processes that are relevant for most of the momentum transport across the shear. The numerical studies of homogeneous shear flows complement analytical and experimental investigations and contribute to bridging the gap between ideal homogeneous isotropic turbulence and the more realistic heterogeneous turbulence.

nlin.CD↗