arXiv subjects

Andreas Fuhrer

Publications and source records attributed to Andreas Fuhrer.

At least 19 recordsLinked to original sources

arXiv2026

Engineering two-qubit gates via anisotropic exchange in germanium spin qubits

Germanium hole spin qubits are a promising and versatile platform for quantum computation and simulation. In this system, strong spin-orbit interaction (SOI) renders the single-qubit $g$-tensor anisotropic and electrically tunable, enabling operational sweet spots with reduced noise sensitivity. SOI also transforms the isotropic two-qubit exchange coupling into an anisotropic tensor whose geometry is inherited from the single-qubit $g$-tensors and spin-flip tunnelling. Here, using two hole spin qubits in a strained-germanium quantum well and full vector control of the magnetic field, we map this exchange tensor, separate it into longitudinal and transverse components, and show that they govern controlled-phase and SWAP-like dynamics, respectively. We find that the longitudinal exchange can be tuned via the magnetic field orientation from a conventional positive value, through zero, to an effectively negative one, as measured by inverted exchange-split spin transitions. The magnetic field direction thus provides continuous control over the interaction Hamiltonian: at a point of purely transverse exchange, we engineer a single-pulse baseband iSWAP, unattainable under isotropic exchange. Linking $g$-tensor geometry to exchange anisotropy establishes native Hamiltonian engineering, enabling spin-based quantum simulation and gate sets selected by the global field orientation alone.

cond-mat.mes-hall↗

arXiv2025

Spatial uniformity of g-tensor and spin-orbit interaction in germanium hole spin qubits

Holes in Ge/SiGe heterostructures are now a leading platform for semiconductor spin qubits, thanks to the high confinement quality, two-dimensional arrays, high tunability, and larger gate structure dimensions. One limiting factor for the operation of large arrays of qubits is the considerable variation in qubit frequencies or properties resulting from the strongly anisotropic $g$-tensor. We study the $g$-tensors of six and seven qubits in an array with a Y geometry across two devices. We report a mean distribution of the tilts of the $g$-tensor's out-of-plane principal axis of around $1.1 \deg$, where nearby quantum dots are more likely to have a similar tilt. Independently of this tilt, and unlike simple theoretical predictions, we find a strong in-plane $g$-tensor anisotropy with strong correlations between neighboring quantum dots. Additionally, in one device where the principal axes of all g-tensors are aligned along the [100] crystal direction, we extract the spin-flip tunneling vector from adjacent dot pairs and find a pattern that is consistent with a uniform Dresselhaus-like spin-orbit field. The Y arrangement of the gate layout and quantum dots allows us to rule out local factors like electrostatic confinement shape or local strain as the origin of the preferential direction. Our results reveal long-range correlations in the spin-orbit interaction and $g$-tensors that were not previously predicted or observed, and could prove critical to reliably understand $g$-tensors in germanium quantum dots.

cond-mat.mes-hall↗

arXiv2025

Resonant two-qubit gates for fermionic simulations with spin qubits

In gate-defined semiconductor spin qubits, the highly tunable Heisenberg exchange interaction is leveraged to implement fermionic two-qubit gates such as CZ and SWAP. However, the broader family of fermionic simulation (fSim) gates remains unexplored, and has the potential to enhance the performance of near-term quantum simulation algorithms. Here, we demonstrate a method to implement the fSim gate set in spin qubits using a single pulse combining baseband and resonant exchange drives. This approach minimizes gate duration and drive amplitude, mitigating decoherence and crosstalk. We validate its effectiveness by realizing a resonant iSWAP gate between two hole spins in germanium, achieving a fidelity of 93.8(5)% extracted with interleaved randomized benchmarking. Quantum process tomography confirms accurate gate calibration and identifies qubit decoherence as the dominant error source. Our results establish a practical route toward a versatile and efficient two-qubit gate set for spin-based quantum processors.

cond-mat.mes-hall↗

arXiv2025

Identifying and mitigating errors in hole spin qubit readout

High-fidelity readout of spin qubits in semiconductor quantum dots can be achieved by combining a radio-frequency (RF) charge sensor together with spin-to-charge conversion and Pauli spin blockade. However, reaching high readout fidelities in hole spin qubits remains elusive and is complicated by a combination of site-dependent spin anisotropies and short spin relaxation times. Here, we analyze the different error processes that arise during readout using a double-latched scheme in a germanium double quantum dot hole spin qubit system. We first investigate the spin-to-charge conversion process as a function of magnetic field orientation, and configure the system to adiabatically map the $\lvert \downarrow\downarrow \rangle$ state to the only non-blockaded state. We reveal a strong dependence of the spin relaxation rates on magnetic field strength and minimize this relaxation by operating at low fields. We further characterize and mitigate the error processes that arise during the double-latching process. By combining an RF charge sensor, a double-latching process, and optimized magnetic field parameters, we achieve a single-shot single-qubit state-preparation-and-measurement fidelity of 97.0%, the highest reported fidelity for hole spin qubits. Unlike prior works and vital to usability, we simultaneously maintain universal control of both spins. These findings lay the foundation for the reproducible achievement of high-fidelity readout in hole-based spin quantum processors.

cond-mat.mes-hall↗

arXiv2025

A dressed singlet-triplet qubit in germanium

In semiconductor hole spin qubits, low magnetic field ($B$) operation extends the coherence time ($T_\mathrm{2}^*$) but proportionally reduces the gate speed. In contrast, singlet-triplet (ST) qubits are primarily controlled by the exchange interaction ($J$) and can thus maintain high gate speeds even at low $B$. However, a large $J$ introduces a significant charge component to the qubit, rendering ST qubits more vulnerable to charge noise when driven. Here, we demonstrate a highly coherent ST hole spin qubit in germanium, operating at both low $B$ and low $J$. By modulating $J$, we achieve resonant driving of the ST qubit, obtaining an average gate fidelity of $99.68\%$ and a coherence time of $T_\mathrm{2}^*=1.9\,\mu$s. Moreover, by applying the resonant drive continuously, we realize a dressed ST qubit with a tenfold increase in coherence time ($T_\mathrm{2\rho}^*=20.3\,\mu$s). Frequency modulation of the driving signal enables universal control, with an average gate fidelity of $99.63\%$. Our results demonstrate the potential for extending coherence times while preserving high-fidelity control of germanium-based ST qubits, paving the way for more efficient operations in semiconductor-based quantum processors.

cond-mat.mes-hall↗

arXiv2023

Capacitive crosstalk in gate-based dispersive sensing of spin qubits

In gate-based dispersive sensing, the response of a resonator attached to a quantum dot gate is detected by a reflected radio-frequency signal. This enables fast readout of spin qubits and tune up of arrays of quantum dots, but comes at the expense of increased susceptibility to crosstalk, as the resonator can amplify spurious signals and induce fluctuations in the quantum dot potential. We attach tank circuits with superconducting NbN inductors and internal quality factors $Q_{\mathrm{i}}$>1000 to the interdot barrier gate of silicon double quantum dot devices. Measuring the interdot transition in transport, we quantify radio-frequency crosstalk that results in a ring-up of the resonator when neighbouring plunger gates are driven with frequency components matching the resonator frequency. This effect complicates qubit operation and scales with the loaded quality factor of the resonator, the mutual capacitance between device gate electrodes, and with the inverse of the parasitic capacitance to ground. Setting qubit frequencies below the resonator frequency is expected to substantially suppress this type of crosstalk.

cond-mat.mes-hall↗

arXiv2023

A Generalizable TCAD Framework for Silicon FinFET Spin Qubit Devices with Electrical Control

We present a TCAD-based simulation framework established for quantum dot spin qubits in a silicon FinFET platform with all-electrical control of the spin state. The framework works down to 1K and consists of a two-step simulation chain, from definition of the quantum dot confinement potential with DC bias voltages, to calculation of microwave response electric field at qubit locations using small-signal AC analysis. An average field polarization vector at each quantum dot is extracted via a post-processing step. We demonstrate functionality of this approach by simulation of a recently reported two-qubit device in the form of a 5-gate silicon FinFET. The impact of the number of holes in each quantum dot on the MW response E-field polarization direction is further investigated for this device. The framework is easily generalizable to study future multi-qubit large-scale systems.

cond-mat.mes-hall↗

arXiv2023

Phase driving hole spin qubits

The spin-orbit interaction in spin qubits enables spin-flip transitions, resulting in Rabi oscillations when an external microwave field is resonant with the qubit frequency. Here, we introduce an alternative driving mechanism of hole spin qubits, where a far-detuned oscillating field couples to the qubit phase. Phase driving at radio frequencies, orders of magnitude slower than the microwave qubit frequency, induces highly non-trivial spin dynamics, violating the Rabi resonance condition. By using a qubit integrated in a silicon fin field-effect transistor (Si FinFET), we demonstrate a controllable suppression of resonant Rabi oscillations, and their revivals at tunable sidebands. These sidebands enable alternative qubit control schemes using global fields and local far-detuned pulses, facilitating the design of dense large-scale qubit architectures with local qubit addressability. Phase driving also decouples Rabi oscillations from noise, an effect due to a gapped Floquet spectrum and can enable Floquet engineering high-fidelity gates in future quantum processors.

cond-mat.mes-hall↗

arXiv2022

Two-qubit logic with anisotropic exchange in a fin field-effect transistor

Semiconductor spin qubits offer a unique opportunity for scalable quantum computation by leveraging classical transistor technology. Hole spin qubits benefit from fast all-electrical qubit control and sweet spots to counteract charge and nuclear spin noise. The demonstration of a two-qubit quantum gate in a silicon fin field-effect transistor, that is, the workhorse device of today's semiconductor industry, has remained an open challenge. Here, we demonstrate a controlled rotation two-qubit gate on hole spins in an industry-compatible device. A short gate time of 24 ns is achieved. The quantum logic exploits an exchange interaction that can be tuned from above 500 MHz to close-to-off. Significantly, the exchange is strikingly anisotropic. By developing a general theory, we show that the anisotropy arises as a consequence of a strong spin-orbit interaction. Upon tunnelling from one quantum dot to the other, the spin is rotated by almost 90 degrees. The exchange Hamiltonian no longer has Heisenberg form and is engineered in such a way that there is no trade-off between speed and fidelity of the two-qubit gate. This ideal behaviour applies over a wide range of magnetic field orientations rendering the concept robust with respect to variations from qubit to qubit. Our work brings hole spin qubits in silicon transistors a step closer to the realization of a large-scale quantum computer.

cond-mat.mes-hall↗

arXiv2021

A hole spin qubit in a fin field-effect transistor above 4 kelvin

The greatest challenge in quantum computing is achieving scalability. Classical computing previously faced a scalability issue, solved with silicon chips hosting billions of fin field-effect transistors (FinFETs). These FinFET devices are small enough for quantum applications: at low temperatures, an electron or hole trapped under the gate serves as a spin qubit. Such an approach potentially allows the quantum hardware and its classical control electronics to be integrated on the same chip. However, this requires qubit operation at temperatures above 1K, where the cooling overcomes heat dissipation. Here, we show that silicon FinFETs can host spin qubits operating above 4K. We achieve fast electrical control of hole spins with driving frequencies up to 150MHz, single-qubit gate fidelities at the fault-tolerance threshold, and a Rabi oscillation quality factor greater than 87. Our devices feature both industry compatibility and quality, and are fabricated in a flexible and agile way that should accelerate further development.

cond-mat.mes-hall↗

arXiv2020

Silicon quantum dot devices with a self-aligned second gate layer

We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we investigate hole transport and observe current rectification due to Pauli spin blockade. Magnetic field measurements indicate that hole spin relaxation is dominated by spin-orbit interaction, and enable us to determine the effective hole $g$-factor $\simeq1.6$. From an avoided singlet-triplet crossing, occurring at high magnetic field, the spin-orbit coupling strength $\simeq0.27$meV is obtained, promising fast and all-electrical spin control.

cond-mat.mes-hall↗

arXiv2019

P-type $δ$-doping with Diborane on Si(001) for STM Based Dopant Device Fabrication

Hydrogen resist lithography using the tip of a scanning tunneling microscope (STM) is employed for patterning p-type nanostructures in silicon. For this, the carrier density and mobility of boron $δ$-layers, fabricated by gas-phase doping, are characterized with low-temperature transport experiments. Sheet resistivities as low as $300\thinspaceΩ$ are found. Adsorption, incorporation and surface diffusion of the dopants are investigated by STM imaging and result in an upper bound of 2\,nm for the lithographic resolution which is also corroborated by fabricating a 7.5\,nm wide p-type nanowire and measuring its electrical properties. Finally, to demonstrate the feasibility of bipolar dopant device fabrication with this technique, we prepared a 100\,nm wide pn junction and show that its electrical behavior is similar to that of an Esaki diode.

cond-mat.mes-hall↗

arXiv2019

CMOS Platform for Atomic-Scale Device Fabrication

Controlled atomic scale fabrication of functional devices is one of the holy grails of nanotechnology. The most promising class of techniques that enable deterministic nanodevice fabrication are based on scanning probe patterning or surface assembly. However, this typically involves a complex process flow, stringent requirements for an ultra high vacuum environment, long fabrication times and, consequently, limited throughput and device yield. Here, a device platform is developed that overcomes these limitations by integrating scanning probe based dopant device fabrication with a CMOS-compatible process flow. Silicon on insulator substrates are used featuring a reconstructed Si(001):H surface that is protected by a capping chip and has pre-implanted contacts ready for scanning tunneling microscope (STM) patterning. Processing in ultra-high vacuum is thus reduced to only a few critical steps which minimizes the complexity, time and effort required for fabrication of the nanoscale dopant devices. Subsequent reintegration of the samples into the CMOS process flow not only simplifies the post-processing but also opens the door to successful application of STM based dopant devices as a building block in more complex device architectures. Full functionality of this approach is demonstrated with magnetotransport measurements on degenerately doped STM patterned Si:P nanowires up to room temperature.

physics.app-ph↗

arXiv2019

Pulsed reset protocol for fixed-frequency superconducting qubits

Improving coherence times of quantum bits is a fundamental challenge in the field of quantum computing. With long-lived qubits it becomes, however, inefficient to wait until the qubits have relaxed to their ground state after completion of an experiment. Moreover, for error-correction schemes it is import to rapidly re-initialize ancilla parity-check qubits. We present a simple pulsed qubit reset protocol based on a two-pulse sequence. A first pulse transfers the excited state population to a higher excited qubit state and a second pulse into a lossy environment provided by a low-Q transmission line resonator, which is also used for qubit readout. We show that the remaining excited state population can be suppressed to $2.2\pm0.8\%$ and utilize the pulsed reset protocol to carry out experiments at enhanced rates.

quant-ph↗

arXiv2018

Gate-efficient simulation of molecular eigenstates on a quantum computer

A key requirement to perform simulations of large quantum systems on near-term quantum hardware is the design of quantum algorithms with short circuit depth that finish within the available coherence time. A way to stay within the limits of coherence is to reduce the number of gates by implementing a gate set that matches the requirements of the specific algorithm of interest directly in hardware. Here, we show that exchange-type gates are a promising choice for simulating molecular eigenstates on near-term quantum devices since these gates preserve the number of excitations in the system. Complementing the theoretical work by Barkoutsos et al. [PRA 98, 022322 (2018)], we report on the experimental implementation of a variational algorithm on a superconducting qubit platform to compute the eigenstate energies of molecular hydrogen. We utilize a parametrically driven tunable coupler to realize exchange-type gates that are configurable in amplitude and phase on two fixed-frequency superconducting qubits. With gate fidelities around 95% we are able to compute the eigenstates within an accuracy of 50 mHartree on average, a limit set by the coherence time of the tunable coupler.

quant-ph↗

arXiv2018

Ambipolar quantum dots in undoped silicon fin field-effect transistors

We integrate ambipolar quantum dots in silicon fin field-effect transistors using exclusively standard complementary metal-oxide-semiconductor fabrication techniques. We realize ambipolarity by replacing conventional highly-doped source and drain electrodes by a metallic nickel silicide with Fermi level close to the silicon mid-gap position. Such devices operate in a dual mode, either as classical field-effect or single-electron transistor. We implement a classical logic NOT gate at low temperature by tuning two interconnected transistors into opposite polarities. In the quantum regime, we demonstrate stable quantum dot operation in the few charge carrier Coulomb blockade regime for both electrons and holes.

cond-mat.mes-hall↗

arXiv2018

Quantum algorithms for electronic structure calculations: particle/hole Hamiltonian and optimized wavefunction expansions

In this work we investigate methods to improve the efficiency and scalability of quantum algorithms for quantum chemistry applications. We propose a transformation of the electronic structure Hamiltonian in the second quantization framework into the particle-hole (p/h) picture, which offers a better starting point for the expansion of the trial wavefunction. The state of the molecular system at study is parametrized in a way to efficiently explore the sector of the molecular Fock space that contains the desired solution. To this end, we explore several trial wavefunctions to identify the most efficient parameterization of the molecular ground state. Taking advantage of known post-Hartree Fock quantum chemistry approaches and heuristic Hilbert space search quantum algorithms, we propose a new family of quantum circuits based on exchange-type gates that enable accurate calculations while keeping the gate count (i.e., the circuit depth) low. The particle-hole implementation of the Unitary Coupled Cluster (UCC) method within the Variational Quantum Eigensolver approach gives rise to an efficient quantum algorithm, named q-UCC , with important advantages compared to the straightforward 'translation' of the classical Coupled Cluster counterpart. In particular, we show how a single Trotter step can accurately and efficiently reproduce the ground state energies of simple molecular systems.

quant-ph↗

arXiv2018

Entanglement generation in superconducting qubits using holonomic operations

We investigate a non-adiabatic holonomic operation that enables us to entangle two fixed-frequency superconducting transmon qubits attached to a common bus resonator. Two coherent microwave tones are applied simultaneously to the two qubits and drive transitions between the first excited resonator state and the second excited state of each qubit. The cyclic evolution within this effective 3-level $Λ$-system gives rise to a holonomic operation entangling the two qubits. Two-qubit states with 95\% fidelity, limited mainly by charge-noise of the current device, are created within $213~\rm{ns}$. This scheme is a step toward implementing a SWAP-type gate directly in an all-microwave controlled hardware platform. By extending the available set of two-qubit operations in the fixed-frequency qubit architecture, the proposed scheme may find applications in near-term quantum applications using variational algorithms to efficiently create problem-specific trial states.

quant-ph↗