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Andreas Ruediger

Publications and source records attributed to Andreas Ruediger.

5 recordsLinked to original sources

Operando Raman probing of mode selective electron phonon coupling in two dimensional halide perovskites

Electron phonon coupling governs charge transport, carrier relaxation, and polaron formation in halide perovskites, yet its microscopic origin in low dimensional systems remains poorly understood. Here, we combine operando, bias dependent Raman spectroscopy with density functional theory (DFT) calculations to directly probe carrier lattice interactions in two-dimensional Ruddlesden Popper perovskites,(PEA)$_2$PbI$_4$ and its fluorinated analogue, (PEA-F)$_2$PbI$_4$. Under applied electric fields, both systems exhibit mode-selective Raman linewidth broadening predominantly near 100 cm$^{-1}$, whereas other phonon modes remain largely unaffected, revealing highly selective coupling between injected carriers and specific lattice vibrations. DFT calculations identify these modes as hybrid organic inorganic vibrations involving coupled motion of the organic spacer and symmetric Pb I equatorial stretching, rather than purely inorganic phonons. Fluorination fundamentally reconstructs the vibrational landscape by modifying molecular packing, crystal symmetry, and organic inorganic coupling, resulting in changes to the phonon density of states, longer phonon lifetimes, and an enhanced carrier mediated lattice response. Notably, electrical bias produces opposite phonon lifetime evolution in thin films and single crystals: the phonon lifetime decreases by approximately 17 to 22% in thin films but increases 20 to 26% in single crystals. These contrasting responses demonstrate that structural order plays a fundamental role in determining carrier phonon interactions and phonon relaxation pathways in two-dimensional halide perovskites.

cond-mat.mtrl-sci

Charge Transport in Thin-Film Transistors Based on Liquid-Crystalline Phthalocyanines

We investigate a series of liquid-crystalline phthalocyanines (metal-free and Cu, Zn, Ni, Co complexes) by correlating their vibrational signatures with their electronic performance in organic thin-film transistors (OTFTs). Raman spectroscopy reveals metal-dependent distortions of the phthalocyanine macrocycle, reflected in systematic shifts of the C-N-C and M-N vibrational modes. When integrated into OTFTs, all compounds exhibit markedly enhanced current response under ultrahigh vacuum compared to an N2-rich environment, demonstrating that intrinsic charge transport is strongly suppressed by atmospheric species. Temperature-dependent measurements (100-300 K) show clear threshold-voltage shifts driven by deep interface and bulk traps, while all devices display thermally activated mobility with low activation energies (14-20 meV). These results highlight how mesomorphic order, metal coordination, and environmental conditions collectively govern charge transport in liquid-crystalline phthalocyanines, offering design guidelines for their use as orientable semiconducting materials in organic electronics.

cond-mat.mtrl-sci

Enhanced Terahertz Spectroscopy of a Monolayer Transition Metal Dichalcogenide

Two-dimensional materials, including transition metal dichalcogenides, are attractive for a variety of applications in electronics as well as photonics and have recently been envisioned as an appealing platform for phonon polaritonics. However, their direct characterization in the terahertz spectral region, of interest for retrieving, e.g., their phonon response, represents a major challenge, due to the limited sensitivity of typical terahertz spectroscopic tools and the weak interaction of such long-wavelength radiation with sub-nanometer systems. In this work, by exploiting an ad-hoc engineered metallic surface enabling a ten-thousand-fold local absorption boost, we perform enhanced terahertz spectroscopy of a monolayer transition metal dichalcogenide (tungsten diselenide) and extract its dipole-active phonon resonance features. In addition, we use these data to obtain the monolayer effective permittivity around its phonon resonance. Via the direct terahertz characterization of the phonon response of such two-dimensional systems, this method opens the path to the rational design of phonon polariton devices exploiting monolayer transition metal dichalcogenides.

physics.optics

Fully CMOS-compatible passive TiO2-based memristor crossbars for in-memory computing

Brain-inspired computing and neuromorphic hardware are promising approaches that offer great potential to overcome limitations faced by current computing paradigms based on traditional von-Neumann architecture. In this regard, interest in developing memristor crossbar arrays has increased due to their ability to natively perform in-memory computing and fundamental synaptic operations required for neural network implementation. For optimal efficiency, crossbar-based circuits need to be compatible with fabrication processes and materials of industrial CMOS technologies. Herein, we report a complete CMOS-compatible fabrication process of TiO2-based passive memristor crossbars with 700 nm wide electrodes. We show successful bottom electrode fabrication by a damascene process, resulting in an optimised topography and a surface roughness as low as 1.1 nm. DC sweeps and voltage pulse programming yield statistical results related to synaptic-like multilevel switching. Both cycle-to-cycle and device-to-device variability are investigated. Analogue programming of the conductance using sequences of 200 ns voltage pulses suggest that the fabricated memories have a multilevel capacity of at least 3 bits due to the cycle-to-cycle reproducibility.

cs.ET

Manipulating Multiple Order Parameters via Oxygen Vacancies: The case of Eu0.5Ba0.5TiO3-δ

Controlling functionalities, such as magnetism or ferroelectricity, by means of oxygen vacancies (VO) is a key issue for the future development of transition metal oxides. Progress in this field is currently addressed through VO variations and their impact on mainly one order parameter. Here we reveal a new mechanism for tuning both magnetism and ferroelectricity simultaneously by using VO. Combined experimental and density-functional theory studies of Eu0.5Ba0.5TiO3-δ, we demonstrate that oxygen vacancies create Ti3+ 3d1 defect states, mediating the ferromagnetic coupling between the localized Eu 4f7 spins, and increase an off-center displacement of Ti ions, enhancing the ferroelectric Curie temperature. The dual function of Ti sites also promises a magnetoelectric coupling in the Eu0.5Ba0.5TiO3-δ.

cond-mat.mtrl-sci