arXiv subjects

Andreas Stintz

Publications and source records attributed to Andreas Stintz.

6 recordsLinked to original sources

arXiv2011

Suppression of Edge Recombination in InAs/InGaAs DWELL Solar Cells

The InAs/InGaAs DWELL solar cell grown by MBE is a standard pin diode structure with six layers of InAs QDs embedded in InGaAs quantum wells placed within a 200-nm intrinsic GaAs region. The GaAs control wafer consists of the same pin configuration but without the DWELL structure. The typical DWELL solar cell exhibits higher short current density while maintaining nearly the same open-circuit voltage for different scales, and the advantage of higher short current density is more obvious in the smaller cells. In contrast, the smaller size cells, which have a higher perimeter to area ratio, make edge recombination current dominant in the GaAs control cells, and thus their open circuit voltage and efficiency severely degrade. The open-circuit voltage and efficiency under AM1.5G of the GaAs control cell decrease from 0.914V and 8.85% to 0.834V and 7.41%, respectively, as the size shrinks from 5*5mm2 to 2*2mm2, compared to the increase from 0.665V and 7.04% to 0.675V and 8.17%, respectively, in the DWELL solar cells.

cond-mat.mes-hall↗

arXiv2007

Single quantum dot spectroscopy using a fiber taper waveguide near-field optic

Photoluminescence spectroscopy of single InAs quantum dots at cryogenic temperatures (~14 K) is performed using a micron-scale optical fiber taper waveguide as a near-field optic. The measured collection efficiency of quantum dot spontaneous emission into the fundamental guided mode of the fiber taper is estimated at 0.1%, and spatially-resolved measurements with ~600 nm resolution are obtained by varying the taper position with respect to the sample and using the fiber taper for both the pump and collection channels.

physics.optics↗

arXiv2007

Multiple quantum wells for passive ultra short laser pulse generation

Solid state lasers are demanding independent control in the gain media and cavity loss to achieve ultra short laser pulses using passive mode-locking. Recently, laser mode-locking is achieved with a MBE structure with multiple quantum wells, designed to achieve two functions; Bragg mirror and changes in absorption to control the cavity dynamics. The use of an AlGaAs/AlAs Bragg mirror with a 15 nm GaAs saturable absorber used in a Cr:LiSAF tuneable laser proved to be effective to produce femtosecond pulses. The use of saturable absorbers thus far is a trial and error procedure that is changing due to the correlation with more predictive procedures.

physics.optics↗

arXiv2005

Cavity Q, mode volume, and lasing threshold in small diameter AlGaAs microdisks with embedded quantum dots

The quality factor (Q), mode volume (Veff), and room-temperature lasing threshold of microdisk cavities with embedded quantum dots (QDs) are investigated. Finite element method simulations of standing wave modes within the microdisk reveal that Veff can be as small as 2(lambda/n)^3 while maintaining radiation-limited Qs in excess of 10^5. Microdisks of diameter D=2 microns are fabricated in an AlGaAs material containing a single layer of InAs QDs with peak emission at lambda = 1317 nm. For devices with Veff ~2 (lambda/n)^3, Qs as high as 1.2 x 10^5 are measured passively in the 1.4 micron band, using an optical fiber taper waveguide. Optical pumping yields laser emission in the 1.3 micron band, with room temperature, continuous-wave thresholds as low as 1 microWatt of absorbed pump power. Out-coupling of the laser emission is also shown to be significantly enhanced through the use of optical fiber tapers, with laser differential efficiency as high as xi~16% and out-coupling efficiency in excess of 28%.

physics.optics↗

arXiv2005

Photoluminescence measurements of quantum-dot-containing semiconductor microdisk resonators using optical fiber taper waveguides

Fiber taper waveguides are used to improve the efficiency of room temperature photoluminescence measurements of AlGaAs microdisk resonant cavities with embedded self-assembled InAs quantum dots. As a near-field collection optic, the fiber taper improves the collection efficiency from microdisk lasers by a factor of ~ 15-100 times in comparison to conventional normal incidence free-space collection techniques. In addition, the fiber taper can serve as a efficient means for pumping these devices, and initial measurements employing fiber pumping and collection are presented. Implications of this work towards chip-based cavity quantum electrodynamics experiments are discussed.

physics.optics↗

arXiv2004

Optical loss and lasing characteristics of high-quality-factor AlGaAs microdisk resonators with embedded quantum dots

Optical characterization of AlGaAs microdisk resonant cavities with a quantum dot active region is presented. Direct passive measurement of the optical loss within AlGaAs microdisk resonant structures embedded with InAs/InGaAs dots-in-a-well (DWELL) is performed using an optical-fiber-based probing technique at a wavelength (lambda~1400 nm) that is red-detuned from the dot emission wavelength (lambda~1200 nm). Measurements in the 1400 nm wavelength band on microdisks of diameter D = 4.5 microns show that these structures support modes with cold-cavity quality factors as high as 360,000. DWELL-containing microdisks are then studied through optical pumping at room temperature. Pulsed lasing at lambda ~ 1200 nm is seen for cavities containing a single layer of InAs dots, with threshold values of ~ 17 microWatts, approaching the estimated material transparency level. Room-temperature continuous wave operation is also observed.

quant-ph↗