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Andreas Theo Pfenning

Publications and source records attributed to Andreas Theo Pfenning.

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Photonic Cluster State Generation from a Quantum Dot Emitting in the Telecom C-band

Photonic cluster states are a key resource for photonic quantum information processing. So far, deterministic generation of these states has been limited to the near-infrared wavelength range. To achieve quantum advantage in communication while maintaining compatibility with silicon photonics, operation in the telecom wavelength range is required. In this work, we demonstrate deterministic cluster state generation directly in the telecom C-band. This is achieved through repetitive excitation of a hole spin confined in an indium-arsenide quantum dot subjected to an external magnetic field. We characterize the quantum process that generates the cluster state by measuring its process map, obtaining a fidelity of $\mathrm{F} = 0.71 \pm 0.01$ to the ideal case. As part of this characterization, we observe spin--photon polarization entanglement with a negativity of $\mathrm{N} = 0.27 \pm 0.02$. The emitted photons exhibit indistinguishability of at least 83%, demonstrating the potential for future fusion gates necessary for photonic cluster state generation beyond linear connectivity.

quant-ph

Analytical Fidelity Calculations for Photonic Linear Cluster State Generation

By precisely timed optical excitation of their spin, optical emitters such as semiconductor quantum dots or atoms can be harnessed as sources of linear photonic cluster states. This significantly reduces the required resource overhead to reach fault-tolerant optical quantum computing. Here, we develop an algorithm that analytically tracks the global density matrix through the process of the protocol for generating linear-cluster states by Lindner and Rudolph. From this we derive a model to calculate the entangling gate fidelity and the state fidelity of the generated linear optical cluster states. Our model factors in various sources of error, such as spin decoherence and the finite excited state lifetime. Additionally, we highlight the presence of partial reinitialization of spin coherence with each photon emission, eliminating the hard limitation of coherence time. Our framework provides valuable insight into the cost-to-improvement trade-offs for device design parameters as well as the identification of optimal working points. For a combined state-of-the-art quantum dot with a spin coherence time of T_2^*=535 ns and an excited state lifetime of τ=23 ps, we show that a near-unity entangling gate fidelity as well as near-unity state fidelity for 3-photon and 7-photon linear cluster states can be reached.

quant-ph

Deterministic Quantum Dot Cavity Placement Using Hyperspectral Imaging with High Spatial Accuracy and Precision

Single emitters in solid state are great sources of single and entangled photons. To boost their extraction efficiency and tailor their emission properties, they are often incorporated in photonic nanostructures. However, achieving accurate and reproducible placement inside the cavity is challenging but necessary to ensure the highest mode overlap and optimal device performance. For many cavity types -- such as photonic crystal cavities or circular Bragg grating cavities -- even small displacements lead to a significantly reduced emitter-cavity coupling. For circular Bragg grating cavities, this yields a significant reduction in Purcell effect, a slight reduction in efficiency and it introduces polarization on the emitted photons. Here we show a method to achieve high accuracy and precision for deterministically placed cavities on the example of circular Bragg gratings on randomly distributed semiconductor quantum dots. We introduce periodic alignment markers for improved marker detection accuracy and investigate overall imaging accuracy achieving $(9.1 \pm 2.5) nm$ through image correction. Since circular Bragg grating cavities exhibit a strong polarization response when the emitter is displaced, they are ideal devices to probe the cavity placement accuracy far below the diffraction limit. From the measured device polarizations, we derive a total spatial process accuracy of $(33.5 \pm 9.9) nm$ based on the raw data, and an accuracy of $(15 \pm 11) nm$ after correcting for the system response, resulting in a device yield of $68 \%$ for well-placed cavities.

cond-mat.mes-hall