arXiv subjects

Andrei Gloskovskii

Publications and source records attributed to Andrei Gloskovskii.

At least 19 recordsLinked to original sources

arXiv2026

Charge transfer and competing symmetry breaking drive orbital reconstruction and emergent ferromagnetism in insulating oxide superlattices

Electron correlation, hopping, and ligand-to-metal charge transfer collectively lead to diverse electronic and magnetic phenomena in 3$d$ transition-metal oxides, where directional d orbitals make hopping highly sensitive to symmetry-dependent orbital overlap. Heterostructure engineering with atomically flat interfaces adds symmetry-breaking charge transfer as a further route to emergent behavior, yet whether interfacial mismatch between constituent oxides of a superlattice shapes ground states independent of epitaxial strain remains unresolved. Here we examine superlattices combining NdNiO$_3$ with Mott-insulating NdMnO$_3$. Varying layer thickness and combining transport with X-ray spectroscopy, we show that electron transfer from NdMnO$_3$ to NdNiO$_3$ drives a room-temperature insulating state with a distinct electronic structure, accompanied by a reversal in orbital symmetry beyond simple strain considerations, underscoring the interface's central role. These reconstructions stabilize an emergent ferromagnetic insulating state arising from interfacial Ni$^{2+}$-O-Mn$^{4+}$ superexchange. Our results establish a pathway to interface-engineered ferromagnetic insulating phases via competing interactions, with potential for spin-insulatronic applications.

cond-mat.mtrl-sci↗

arXiv2026

Lifetime effects and satellites in the photoelectron spectrum of platinum metal

This work presents a comprehensive investigation of the electronic structure and many-body photoemission effects in metallic platinum using reflection high-energy electron energy-loss spec- troscopy (RHEELS), soft X-ray photoelectron spectroscopy (SXPS), and hard X-ray photoelectron spectroscopy (HAXPES), supported by ab initio calculations. Shallow and deep core state spectra enable the systematic characterisation of intrinsic line-shape asymmetries and satellite structures. Correlation of photoelectron satellites with RHEELS loss features allows the assignment of inter- band transitions, surface and bulk plasmons, plasmonic overtones, and semi-core ionisation losses across the Pt spectrum. Several previously unresolved satellite features and spin-orbit splittings are identified and discussed. Comparison of experimental valence band spectra with orbital-projected densities of states calculated using ab initio density functional theory (DFT) and G0W0 approaches, with and without spin-orbit coupling, demonstrates the critical role of relativistic effects in reproducing the Pt valence electronic structure. Together, these results establish a unified, internally consistent spectroscopic reference for metallic platinum, providing a robust framework for interpreting photoelectron spectra of Pt-containing catalysts, electronic materials, and related 5d transition metal systems.

cond-mat.mtrl-sci↗

arXiv2026

From Film to Flakes: Electronic Properties and Magnetization Variations in Yttrium Iron Garnet

Yttrium iron garnet (YIG) is a ferrimagnetic insulator valued for its high Curie temperature, very low magnetic damping, and ability to support long-range spin-wave transport. These qualities have established it as a cornerstone material in the field of spintronics and magnonics. Most studies on YIG so far have been focused on bulk crystals, thin films, and nanoparticles, including variants with substitutions at the yttrium or iron site. New morphologies such as sub-micron flakes have drawn interest recently as their geometry and mechanical flexibility might enable different device architectures. However, detailed investigations combining their electronic structure and magnetic behavior remain scarce. In this work, we present a comparative study of the electronic and magnetic properties of a bulk-like YIG film and a sub-micron-sized YIG flake. Our results highlight the distinct behavior that emerges in sub-micron dimensions and point toward future uses for flake-based YIG in compact spintronics devices.

cond-mat.mtrl-sci↗

arXiv2026

UCd$_{11}$: A strongly localized 5$f^3$ material

UCd$_{11}$ is an antiferromagnetic uranium intermetallic compound ($T_{\rm N}$ = 5.3K) with enhanced electron mass and uranium-uranium spacings nearly twice the Hill limit, suggesting a weakly hybridized 5$f$ electronic character. Various x-ray spectroscopy techniques indicate that uranium in UCd$_{11}$ adopts the formal U$^{3+}$ 5$f^3$ configuration, while core-level photoemission spectroscopy (PES) data of UCd$_{11}$ reveal only a weak satellite feature, typically interpreted as a signature of itinerancy. In this work, we present density functional theory (DFT) combined with dynamical mean-field theory (DMFT) calculations of UCd$_{11}$, using material-specific parameters tuned to reproduce valence-band PES spectra at different photon energies, thereby exploiting the energy dependence of photoionization cross sections. Our results demonstrate that UCd$_{11}$ is a highly localized uranium 5$f^3$ system. Furthermore, core-level spectra obtained from a DFT+DMFT Anderson impurity model reveal that, contrary to common assumptions, the presence or absence of satellite structures is not a reliable indicator of strong correlations or itinerant 5$f$ behavior.

cond-mat.str-el↗

arXiv2026

Influence of oxygen ion implantation on magnetic microstructure in Pt/Co/Pt multilayers with perpendicular magnetic anisotropy

The interaction of oxygen with cobalt and cobalt-based alloys has been a very important topic in the field of spintronics as it leads to enhanced orbital anisotropy and interfacial Dzyaloshinskii-Moriya interaction (DMI), which are crucial in the context of applications such as magnetic tunnel junctions (MTJs) based data storage and domain wall (DW) motion. To understand the complex and interesting relationship between oxygen and ferromagnetic (FM)/heavy metal (HM) interfaces, we studied controlled oxygen ion implantation in a cobalt layer located in a Pt/Co 1.2 /Pt (nm) multilayer with a specific structure. At high implantation fluence, the perpendicular anisotropy was lost, as verified by in-plane hysteresis measurements. Under low magnetic field conditions, the DW dynamics of Co/Pt multilayers were analyzed, highlighting key parameters such as DW velocity, roughness amplitude, and roughness exponent. After O+-ion implantation, the DW velocity increased by more than 50 times, rising from 5 um/s to 300 um/s compared with the as-deposited multilayer. The fundamental cause of this improvement is the structural and magnetic changes brought by the implantation, which successfully lower the energy barriers preventing DW movements. The results show how oxygen implantation can be used to precisely tailor the ferromagnetic interfaces, leading to promised improvements in the functionality of next-generation spintronic devices.

cond-mat.mtrl-sci↗

arXiv2026

Investigation of the Electronic Structure and Spin-State Crossover in LaCoO3 Using Photoemission Spectroscopy

Photoemission spectroscopy is a powerful technique for studying electronic structure and spin-state transitions, as it reveals changes in the orbital configuration accompanying a spin-state crossover. In this report, we combine excitation-energy-, temperature-, and geometry-dependent photoemission measurements to probe the electronic structure of LaCoO3 across its thermally driven spin-state transition. By systematically comparing valence-band spectra across a wide photon-energy window - from surface-sensitive soft x-ray photoemission spectroscopy (SXPS) to bulk-sensitive hard x-ray photoemission spectroscopy (HAXPES) - we identify the Co 3d-derived feature (A) along with the O 2p-dominated features (B and C), and explain their relative evolution in terms of photon-energy-dependent photo-ionization cross-section ratios. The thermally induced spin-state crossover is demonstrated using temperature-dependent SXPS valence-band spectra, which show a progressive suppression of the feature A with heating. Geometry-dependent HAXPES measurements further clarify how the signature of the spin-state transition in LaCoO3 is intricately linked to the orbital-selective response of the t2g and eg states. Additionally, angular-dependent photo-ionization cross-section analysis provides a consistent description of the polarization dependence observed in HAXPES. Finally, configuration-interaction analysis of the Co 2p core-level spectra reveals that LaCoO3 evolves from a predominantly low-spin ground state at low temperature to a mixed low-spin/high-spin configuration at elevated temperatures, with the high-spin fraction reaching about 30 percent at 400 K. The temperature evolution of the core-level line shape thus establishes Co 2p photoemission as a sensitive quantitative probe of spin-state transitions in LaCoO3.

cond-mat.str-el↗

arXiv2025

Extending the Growth Temperature-N Concentration Regime Through Pd Doping in Fe4N Thin Films

Fe4N is a well-known anti-perovskite compound exhibiting high magnetization, high chemical stability, low coercivity, high Curie temperature, and high spin-polarization ratio. Therefore, it is a viable candidate for applications in spintronic and magnetic storage devices. However, the Fe4N phase is formed in a narrow substrate temperature (Ts)-N concentration (Nc) regime in the phase diagram of Fe-N. It has been observed that a slight N deficiency will lead to impurity of alpha-Fe, and some N efficiency would result in epsilon-Fe3N phase. Through this work, it has been demonstrated that the doping of Pd can be suitably utilized to extend the Ts-Nc regime for the growth of Fe4N thin films. EXAFS analysis indicate that Pd atoms are substituting corner Fe atoms. Magnetization measurements reveal that the saturation magnetization reduces nominally with Pd doping up to 13 at.%. Therefore, it is foreseen that Pd doping is effective in extending the Fe4N phase formation regime without a significant impact on its structural, electronic, and magnetic properties.

cond-mat.mtrl-sci↗

arXiv2025

Ge$_{1-x}$Si$_{x}$ single crystals for Ge hole spin qubit integration

Spin qubits are fundamental building blocks of modern quantum computing devices. The path of Ge-based hole-spin qubits has several advantages over Si-based electron-spin systems, such as the absence of valley band degeneracy, the possibility of efficient field control due to large spin-orbit coupling, and smaller effective masses. Among the possible Ge qubit devices, Ge/GeSi planar heterostructures have proven to be favourable for upscaling and fabrication. The Si concentration of the straining GeSi buffer serves as an important tuning parameter for the electronic structure of Ge/GeSi qubits. A particularly low Si concentration of x = 0.15 of the Ge$_{0.85}$Si$_{0.15}$ crystal should enable minimal lattice strain for spin qubit heterostructures, which is difficult to stabilize as a random alloy. We present a synchrotron-based study to investigate the chemical composition, valence band electronic structure and local atomic structure of a Ge$_{0.85}$Si$_{0.15}$ single crystal using the advanced combination of hard X-ray photoelectron spectroscopy (HAXPES), hard X-ray momentum microscopy (HarMoMic) and X-ray photoelectron diffraction (XPD). We found that the Ge$_{0.85}$Si$_{0.15}$ crystal has an individual, uniform valence band structure, with no signs of phase separation. The shapes of the valence bands resemble those of pure Ge, as do the low effective masses. XPD experiments and Bloch wave calculations, show the Si atoms located at Ge lattice sites within the crystal, forming a random alloy. This high chemical, electronic and structural quality of Ge$_{0.85}$Si$_{0.15}$ single-crystal substrates is of crucial importance for their implementation to enable long spin lifetimes in Ge-based hole-spin qubits. The results emphasise the power of combined X-ray spectromicroscopy techniques, which provide key insights into the qubit building blocks that form the basis of quantum technologies.

cond-mat.mtrl-sci↗

arXiv2025

Beyond being free: glassy dynamics of SrTiO$_3$-based two-dimensional electron gas

Electron glasses offer a convenient laboratory platform to study glassy dynamics. Traditionally, the interplay between long-range Coulomb interactions and disorder is deemed instrumental in stabilizing the electron glass phase. Existing experimental studies on electron glass have focused on doped semiconductors, strongly correlated systems, granular systems, etc., all of which are far from the well-delocalized limit. In this work, we expand the study of electron glasses to a well-known quantum paraelectric SrTiO$_3$ (STO) and unveil a new scenario: how naturally occurring ferroelastic twin walls of STO could result in glassy electrons, even in a metallic state. We show that the emergent two-dimensional electron gas at the $γ$-Al$_2$O$_3$/STO interface exhibits long-lasting temporal relaxations in resistance and memory effects at low temperatures, which are hallmarks of glassiness. We also demonstrate that the glass-like relaxations could be further tuned by application of an electric field. This implies that the observed glassy dynamics is connected with the development of polarity near the structural twin walls of STO and the complex interactions among them, arising from the coupling between ferroelastic and ferroelectric orders. The observation of this glassy metal phase not only extends the concept of electron glasses to metallic systems with multiple order parameters but also contributes to the growing understanding of the fascinating and diverse physical phenomena that emerge near the quantum critical point.

cond-mat.str-el↗

arXiv2024

Long-term stability and oxidation of ferroelectric AlScN devices: An operando HAXPES study

Aluminum scandium nitride (Al$_{1-x}$Sc$_x$N) is a promising material for ferroelectric devices due to its large remanent polarization, scalability, and compatibility with semiconductor technology. By doping AlN with Sc, the bonds in the polar AlN structure are weakened, which enables ferroelectric switching below the dielectric breakdown field. However, one disadvantage of Sc doping is that it increases the material's tendency towards oxidation. In the present study, the oxidation process of tungsten-capped and uncapped Al$_{0.83}$Sc$_{0.17}$N thin films is investigated by hard X-ray photoelectron spectroscopy (HAXPES). The samples had been exposed to air for either two weeks or 6 months. HAXPES spectra indicate the replacement of nitrogen by oxygen, and the tendency of oxygen to favor oxidation with Sc rather than Al. The appearance of an N$_2$ spectral feature thus can be directly related to the oxidation process. We present an oxidation model that mimics these spectroscopic results of the element-specific oxidation processes within Al$_{1-x}$Sc$_x$N. Finally, in operando HAXPES data of uncapped and capped AlScN-capacitor stacks are interpreted using the proposed model.

cond-mat.mtrl-sci↗

arXiv2024

Enabling two-dimensional electron gas with high room-temperature electron mobility exceeding 100 cm$^2$/Vs at a perovskite oxide interface

In perovskite oxide heterostructures, bulk functional properties coexist with emergent physical phenomena at epitaxial interfaces. Notably, charge transfer at the interface between two insulating oxide layers can lead to the formation of a two-dimensional electron gas (2DEG) with possible applications in, e.g., high-electronmobility transistors and ferroelectric field-effect transistors. So far, the realization of oxide 2DEGs is, however, largely limited to the interface between the single-crystal substrate and epitaxial film, preventing their deliberate placement inside a larger device architecture. Additionally, the substrate-limited quality of perovskite oxide interfaces hampers room-temperature 2DEG performance due to notoriously low electron mobility. In this work, we demonstrate the controlled creation of an interfacial 2DEG at the epitaxial interface between perovskite oxides BaSnO$_3$ and LaInO$_3$ with enhanced room-temperature electron mobilities up to 119 cm$^2$/Vs - the highest room-temperature value reported so far for a perovskite oxide 2DEG. Using a combination of state-of-the-art deposition modes during oxide molecular beam epitaxy, our approach opens up another degree of freedom in optimization and $in$-$situ$ control of the interface between two epitaxial oxide layers away from the substrate interface. We thus expect our approach to apply to the general class of perovskite oxide 2DEG systems and to enable their improved compatibility with novel device concepts and integration across materials platforms.

cond-mat.mes-hall↗

arXiv2024

Quantifying the U $5f$ covalence and degree of localization in U intermetallics

A procedure for quantifying the U $5f$ electrons' covalence and degree of localization in U intermetallic compounds is presented. To this end, bulk sensitive hard and soft x-ray photoelectron spectroscopy were utilized in combination with density-functional theory (DFT) plus dynamical mean-field theory (DMFT) calculations. The energy dependence of the photoionization cross-sections allows the disentanglement of the U\,$5f$ contribution to the valence band from the various other atomic subshells so that the computational parameters in the DFT\,+\,DMFT can be reliably determined. Applying this method to UGa$_2$ and UB$_2$ as model compounds from opposite ends of the (de)localization range, we have achieved excellent simulations of the valence band and core-level spectra. The width in the distribution of atomic U\,$5f$ configurations contributing to the ground state, as obtained from the calculations, quantifies the correlated nature and degree of localization of the U\,5$f$. The findings permit answering the longstanding question why different spectroscopic techniques give seemingly different numbers for the U 5$f$ valence in intermetallic U compounds.

cond-mat.str-el↗

arXiv2024

Intrinsic and extrinsic plasmons in the hard x-ray photoelectron spectra of nearly free electron metals

Collective plasmon excitations in solids that result from the process of photoemission are an important area of fundamental research. In this study, we identify a significant number ($n$) of multiple bulk plasmons ($nω_p$) in the hard x-ray photoelectron spectra of the core levels and valence bands (VBs) of two well-known, nearly free electron metals, aluminum (Al) and magnesium (Mg). On the basis of earlier theoretical works, we estimate the contributions of extrinsic, intrinsic, and interference processes to the intensities of 1$s$ to 2$s$ core level plasmons. The intrinsic contribution diminishes from 22% for 1$ω_p$, to 4.4% for 2$ω_p$, and becomes negligible thereafter (0.5% for 3$ω_p$). The extrinsic and intrinsic plasmon contributions do not vary significantly across a broad range of photoelectron kinetic energies, and also between the two metals (Al and Mg). The interference contribution varies from negative to zero as $n$ increases. An asymmetric line shape is observed for the bulk plasmons, which is most pronounced for 1$ω_p$. Signature of the surface plasmon is detected in normal emission, and it exhibits a significantly increased intensity in the grazing emission. The VB spectra of Al and Mg, which are dominated by $s$-like states, exhibit excellent agreement with the calculated VB based on density functional theory. The VB exhibits four multiple bulk plasmon peaks in the loss region, which are influenced by an intrinsic process in addition to the extrinsic process. On a completely oxidized aluminum surface, the relative intensity of the Al metal bulk plasmon remains nearly unaltered, while the surface plasmon is completely attenuated.

cond-mat.mtrl-sci↗

arXiv2024

2D synthetic ferrimagnets by magnetic proximity coupling

Proximity effects allow for the adjustment of magnetic properties in a physically elegant way. If two thin ferromagnetic (FM) films are brought into contact, electronic coupling alters their magnetic exchange interaction at their interface. For a low-TC rare-earth FM coupled to a 3d transition metal FM, even room temperature magnetism is within reach. In addition, magnetic proximity coupling is particularly promising for increasing the magnetic order of metastable materials such as europium monoxide (EuO) beyond their bulk TC, since neither the stoichiometry nor the insulating properties are modified. We investigate the magnetic proximity effect at Fe/EuO and Co/EuO interfaces using hard X-ray photoelectron spectroscopy. By exciting the FM layers with circularly polarized light, magnetic dichroism is observed in angular dependence on the photoemission geometry. In this way, the depth-dependence of the magnetic signal is determined element-specifically for the EuO and 3d FM parts of the bilayers. In connection with atomistic spin dynamics simulations, the thickness of EuO layer is found to be crucial, indicating that the observed antiferromagnetic proximity coupling is a short-ranged and genuine interface phenomenon. This fact turns the bilayer into a strong synthetic ferrimagnet. The increase in magnetic order in EuO occurs in a finite spatial range and is therefore particularly strong in the 2D limit-a counterintuitive but very useful phenomenon for spin-based device applications.

cond-mat.mtrl-sci↗

arXiv2024

Stabilization of U 5$f^2$ configuration in UTe$_2$ through U 6d dimers in the presence of Te2 chains

We investigate the topological superconductor candidate UTe$_2$ using high-resolution valence-band resonant inelastic x-ray scattering at the U $M_{4,5}$-edges. We observe atomic-like low-energy excitations that support the correlated nature of this unconventional superconductor. These excitations originate from the U $5f^2$ configuration, which is unexpected since the short Te2-Te2 distances exclude Te2 being 2-. By utilizing the photoionization cross-section dependence of the photoemission spectra in combination with band structure calculations, we infer that the stabilization of the U $5f^2$ configuration is due to the U $6d$ bonding states in the U-dimers acting as a charge reservoir. Our results emphasize that the description of the physical properties should commence with a $5f^2$ $ansatz$.

cond-mat.str-el↗

arXiv2023

Bulk Electronic Structure of Ni2MnGa studied by Density Functional Theory and Hard X-ray Photoelectron Spectroscopy

A combined study employing density functional theory (DFT) using the experimentally determined modulated structures and bulk-sensitive hard x-ray photoelectron spectroscopy on single-crystalline Ni$_2$MnGa is presented in this work. For the aforementioned modulated structures, all of the characteristic features in the experimental valence band (VB) are in excellent agreement with the theoretical VB calculated from DFT, evincing that it is the true representation of Ni$_2$MnGa in the martensite phase. We establish the existence of a charge density wave (CDW) state in the martensite phase from the shape of the VB near $E_F$ that shows a transfer of spectral weight in excellent agreement with DFT. Furthermore, presence of a pseudogap is established by fitting the near $E_F$ region with a power law function predicted theoretically for the CDW phase. Thus, the present work emphasizes that the atomic modulation plays an important role in hosting the CDW phase in bulk stoichiometric Ni$_2$MnGa.

cond-mat.mtrl-sci↗

arXiv2023

Revealing the bonding nature and electronic structure of early transition metal dihydrides

Hydrogen as a fuel plays a crucial role in driving the transition to net zero greenhouse gas emissions. To realise its potential, obtaining a means of efficient storage is paramount. One solution is using metal hydrides, owing to their good thermodynamical absorption properties and effective hydrogen storage. Although metal hydrides appear simple compared to many other energy materials, understanding the electronic structure and chemical environment of hydrogen within them remains a key challenge. This work presents a new analytical pathway to explore these aspects in technologically relevant systems using Hard X-ray Photoelectron Spectroscopy (HAXPES) on thin films of two prototypical metal dihydrides: YH$_{2-δ}$ and TiH$_{2-δ}$. By taking advantage of the tunability of synchrotron radiation, a non-destructive depth profile of the chemical states is obtained using core level spectra. Combining experimental valence band spectra collected at varying photon energies with theoretical insights from density functional theory (DFT) calculations, a description of the bonding nature and the role of d versus sp contributions to states near the Fermi energy are provided. Moreover, a reliable determination of the enthalpy of formation is proposed by using experimental values of the energy position of metal s band features close to the Fermi energy in the HAXPES valence band spectra.

cond-mat.mtrl-sci↗

arXiv2023

Modulation-Doping a Correlated Electron Insulator

Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change. External control of MIT in VO2 - especially without inducing structural changes - has been a long-standing challenge. In this work, we design and synthesize modulation-doped VO2-based thin film heterostructures that closely emulate a textbook example of filling control in a correlated electron insulator. Using a combination of charge transport, hard x-ray photoelectron spectroscopy, and structural characterization, we show that the insulating state can be doped to achieve carrier densities greater than 5x10^21 cm^(-3) without inducing any measurable structural changes. We find that the MIT temperature (T_MIT) continuously decreases with increasing carrier concentration. Remarkably, the insulating state is robust even at doping concentrations as high as ~0.2 e-/vanadium. Finally, our work reveals modulation-doping as a viable method for electronic control of phase transitions in correlated electron oxides with the potential for use in future devices based on electric-field controlled phase transitions.

cond-mat.mtrl-sci↗