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Andrei Manolescu

Publications and source records attributed to Andrei Manolescu.

At least 55 records · Page 3Linked to original sources

Edge effect on the current-temperature characteristic of thermionic cathodes

We perform a computational study, based on the molecular dynamics method, of the shape of Miram curves obtained from microscale planar diodes. We discuss the smooth transition from the source-limited to space-charge-limited regime due to the finite size of the emitter, i.e. the "knee" in the Miram curve. In our model we find that the smoothing occurs mostly due to the increased emission at the external edges of the emitting area, and that the knee becomes softer when the size of the emitting area decreases. We relate this to the recent work which has described how a heterogeneous work function similarly affects the Miram curve.

physics.comp-ph↗

On the role of ion potential energy in low energy HiPIMS deposition: An atomistic simulation

We study the effect of the so-called ion potential or non-kinetic energies of bombarding ions during ionized physical vapor deposition of Cu using molecular dynamics simulations. In particular we focus on low energy HiPIMS deposition, in which the potential energy of ions can be comparable to their kinetic energy. The ion potential, as a short-ranged repulsive force between the ions of the film-forming material and the surface atoms (substrate and later deposited film), is defined by the Ziegler-Biersack-Littmark potential. Analyzing the final structure indicates that, including the ion potential leads to a slightly lower interface mixing and fewer point defects (such as vacancies and interstitials), but resputtering and twinning have increased slightly. However, by including the ion potential the collision pattern changes. We also observed temporary formation of a ripple/pore with 5~nm height when the ion potential is included. The latter effect can explain the pores in HiPIMS deposited Cu thin films observed experimentally by atomic force microscopy.

cond-mat.mtrl-sci↗

Enhanced electronic and optical responses of Nitrogen- or Boron-doped BeO monolayer: First principle computation

In this work, the electronic and optical properties of a Nitrogen (N) or a Boron (B) doped BeO monolayer are investigated in the framework of density functional theory. It is known that the band gap of a BeO monolayer is large leading to poor material for optoelectronic devices in a wide range of energy. Using substitutional N or B dopant atoms, we find that the band gap can be tuned and the optical properties can be improved. In the N(B)-doped BeO monolayer, the Fermi energy slightly crosses the valence(conduction) band forming a degenerate semiconductor structure. The N or B atoms thus generate new states around the Fermi energy increasing the optical conductivity in the visible light region. Furthermore, the influences of dopant atoms on the electronic structure, the stability, the dispersion energy, the density of states, and optical properties such as the plasmon frequency, the excitation spectra, the dielectric functions, the static dielectric constant, and the electron energy loss function are discussed for different directions of polarizations for the incoming electric field.

cond-mat.mtrl-sci↗

Interaction effects in a two-dimensional AlSi$_6$P nanosheet: A first-principles study on the electronic, mechanical, thermal, and optical properties

Physical quilities such as electronic, mechanical, thermal, and optical properties of Al and P codoped silicene forming AlSi$_6$P nanosheets are investigated by first-principle calculations within density functional theory. A particular attention of this study is paid to the interaction effect between the Al and P atoms in the buckled silicene structure. We infer that the interaction type is attractive and it leads to an asymmetry in the density of states opening up a band gap. In contrast to BN-codoped silicene, the buckling in the Al-P codoped silicene is not much influenced by the dopants as the bond lengths of Si-P and Al-P are very similar to the Si-Si bond lengths. On the other hand, the longer bond length of Si-Al decreases the stiffness and thus induces fractures at smaller values of applied strain in AlSi$_6$P. The elastic and nonelastic regions of the stress-strain curve of AlSi$_6$P depend on the placement of the Al and P atoms. The finite band gap caused by the Al-P dopant leads to enhancement of the Seebeck coefficient and the figure of merit, and induces a redshift of peaks in the dielectric response, and the optical conductivity. Finally, properties of the real and imaginary parts of the dielectric function, the excitation spectra, the refractive index, and the optical response of AlSi$_6$P are reported.

cond-mat.mes-hall↗

Electromagnetic field emitted by core-shell semiconductor nanowires driven by an alternating current

We consider tubular nanowires with a polygonal cross-section. In this geometry the lowest energy states are separated in two sets, one of corner and one of side-localized states, respectively. The presence of an external magnetic field transverse to the nanowire imposes an additional localization mechanism, the electrons being pushed sideways relatively to the direction of the field. This effect has important implications on the current density, as it creates current loops induced by the Lorentz force. We calculate numerically the electromagnetic field radiated by hexagonal, square, and triangular nanowires. We demonstrate that, because of the aforementioned localization properties, the radiated field can have a complex distribution determined by the internal geometry of the nanowire. We suggest that measuring the field in the neighborhood of the nanowire could be the basic idea of a tomography of the electron distribution inside it, if a smaller receiver antenna could be placed in that zone.

cond-mat.mes-hall↗

Role of interlayer spacing on electronic, thermal and optical properties of BN-codoped bilayer graphene:\break Influence of the interlayer and the induced dipole-dipole interactions

We demonstrate that the electronic, thermal, and optical properties of a graphene bilayer with boron and nitrogen dopant atoms can be controlled by the interlayer distance between the layers in which the interaction energy and the van der Waals interaction between the dopant atoms play an essential role. We find a conversion of an AA- to an AB-stacked bilayer graphene caused by the repulsive interaction between dopant atoms. At a short interlayer distance, a strong repulsive interaction inducing a strong electric dipole moment of the dopant atoms is found. This gives rise to a breaking of the high symmetry, opening up a bandgap. Consequently, a considerable change in thermoelectric properties such as the Seebeck coefficient and the figure of merit are seen. The repulsive interaction is reduced by increasing the interlayer distance, and at a large interlayer distance the conversion process of the stacking order vanishes. A small bandgap is found leading to a low Seebeck coefficient and a figure of merit. For both short and large interlayer distances, a prominent peak in the optical response is found in the visible range and the peak position is inversely proportional to the interlayer distance.

cond-mat.mes-hall↗

Space-charge effects in the field-assisted thermionic emission from nonuniform cathodes

We use computational simulations to study the electron emission and propagation in planar vacuum diodes. We show how space-charge affects thermionic emission from cathodes with two different values of work function that form a checkerboard pattern of finite extent on the cathode surface. We confirm that, for intermediate cathode temperature, the local current density from low work function regions can exceed the space-charge limit for the entire cathode. As the cathode temperature rises space-charge effects lead to homogeneous current density from the interior of the emitting area and a higher current density from its periphery. We show how beam emittance and brightness are affected, and show that the operating temperature for optimal brightness is such that it corresponds to the transition region between source-limited and space-charge limited emission. Finally we show how beam current and beam quality depend on how fine grained the structure of the cathode is.

physics.comp-ph↗

Conversion of the stacking orientation of bilayer graphene due to \break the interaction of BN-dopants

A conversion of AA- to AB-stacking bilayer graphene (BLG) due to interlayer interaction is demonstrated. Two types of interlayer interactions, an attractive and a repulsive, between the Boron and Nitrogen dopant atoms in BLG are found. In the presence of the attractive interaction, an AA-stacking of BN-codoped BLG is formed with a less stable structure leading to weak mechanical properties of the system. Low values of the Young modulus, the ultimate strength and stress, and the fracture strength are observed comparing to a pure BLG. In addition, the attractive interaction induces a small bandgap that deteriorates the thermal and optical properties of the system. In contrast, in the presence of a repulsive interaction between the B and N atoms, the AA-stacking is converted to a AB-stacking with a more stable structure. Improved mechanical properties such as higher Young modulus, the ultimate strength and stress, fracture strength are obtained comparing to the AA-stacked BN-codoped BLG. Furthermore, a larger bandgap of the AB-stacked bilayer enhances the thermal and the optical characteristics of the system.

cond-mat.mes-hall↗

Self-induction and magnetic effects in electron transport through a photon cavity

We explore higher order dynamical effects in the transport through a two-dimensional nanoscale electron system embedded in a three-dimensional far-infrared photon cavity. The nanoscale system is considered to be a short quantum wire with a single circular quantum dot defined in a GaAs heterostructure. The whole system, the external leads and the central system are placed in a constant perpendicular magnetic field. The Coulomb interaction of the electrons, the para- and diamagnetic electron-photon interactions are all treated by a numerically exact diagonalization using step-wise truncations of the appropriate many-body Fock spaces. We focus on the difference in transport properties between a description within an electric dipole approximation and a description including all higher order terms in a single photon mode model. We find small effects mostly caused by an electrical quadrupole and a magnetic dipole terms that depend strongly on the polarization of the cavity field with respect to the transport direction and the photon energy. When the polarization is aligned along the transport direction we find indications of a weak self-induction that we analyze and compare to the classical counterpart, and the self-energy contribution of high-order interaction terms to the states the electrons cascade through on their way through the system. Like expected the electron-photon interaction is well described in the dipole approximation when it is augmented by the lowest order diamagnetic part for a nanoscale system in a cavity in an external magnetic field.

cond-mat.mes-hall↗

Dynamics of a Field Emitted Beam from a Microscopic Inhomogeneous Cathode

We investigate by molecular dynamics simulations [arXiv:1412.4537 [physics.plasm-ph], arXiv:1608.06789 [physics.plasm-ph]] a beam of electrons released via field emission from a planar cathode surface of 1 ${\rm μm}^2$ with an inhomogeneous two-level work function, $ϕ_{\rm low}$ and $ϕ_{\rm high}$. A rectangular grid, where each cell can have one out of two values of the work function, is used as a model. The number of cells in the grid ranges from 6x6 to 96x96. We compare a periodic checkerboard arrangement with disordered distributions of patches. We perform multiple simulations and randomize the pattern each time. We study the beam behavior by calculating the position and velocity of each electron, r.m.s. emittance, and the brightness of the electron beam. The emittance increases while brightness decreases, with the mean distance between patches with $ϕ_{\rm low}$ when they are in minority, and they switch the behavior vs. the mean distance between patches with $ϕ_{\rm high}$ when these patches are in minority, respectively. The Coulomb interaction between all particles is fully included in our simulations.

physics.plasm-ph↗

Majorana Zero Modes in Nanowires with Combined Triangular and Hexagonal Geometry

The effects of geometry on the hosting of Majorana zero modes are explored in core-shell nanowires with a hexagonal core and a triangular shell, and vice versa. The energy interval separating electronic states localized in the corners from states localized on the sides of the shell is shown to be larger for a triangular nanowire with a hexagonal core, than a triangular one. We build the topological phase diagram for both cases and compare them to earlier work on prismatic nanowires with the same core and shell geometry. We suggest that a dual core nanowire is needed to allow for a braiding operation of Majorana zero modes at the nanowire end plane.

cond-mat.mes-hall↗

Space-Charge Limited Current from a Finite Emitter in Nano- and Microdiodes

We simulate numerically the classical charge dynamics in a microscopic, planar, vacuum diode with a finite emitter area and a finite number of electrons in the gap. We assume electrons are emitted under space-charge limited conditions with a fixed potential applied to the diode. The Coulomb interaction between all electrons is included using the method of molecular dynamics. We compare our results to the conventional two-dimensional Child-Langmuir and explain how it is limited in applicability for sub-micron diameter emitters. Finally, we offer some simple relations for understanding space-charge limited flow from very small emitters.

physics.acc-ph↗

Spin-polarised DFT modeling of electronic, magnetic, thermal and optical properties of silicene doped with transition metals

The geometric, electronic, magnetic, thermal, and optical properties of transition metal (TM) doped silicene are systematically explored using spin-dependent density functional computation. We find that the TM atoms decrease the buckling degree of the silicene structure caused by the interaction between the dopant TM atoms and the Si atoms in the silicene layer plane which is quite strong. In some TM-silicenes, parallel bands and the corresponding van Hove singularities are observed in the electronic band structure without and with spin-polarization. These parallel bands are the origin of most of the transitions in the visible and the UV regions. A high Seebeck coefficient is found in some TM-silicene without spin-polarization. In the presence of emergent spin-polarization, a reduction or a magnification of the Seebeck coefficient is seen due to a spin-dependent phase transition. We find that the preferred state is a ferromagnetic state with a very high Curie temperature. We observe a strong interaction and large orbital hybridization between the TM atoms and the silicene. As a result, a high magnetic moment emerges in TM-silicene. Our results are potentially beneficial for thermospin, and optoelectronic nanodevices.

cond-mat.mes-hall↗

Interlayer interaction controlling the properties of AB- and AA-stacked bilayer graphene-like BC$_{14}$N and Si$_{2}$C$_{14}$

We model bilayer graphene-like materials with Si$_2$C$_{14}$ and BC$_{14}$N stoichiometry, where the interlayer interactions play important roles shaping the physical properties of the systems. We find the interlayer interaction in Si$_2$C$_{14}$ to be repulsive due to the interaction of Si-Si atoms, and in BC$_{14}$N it is attractive due to B and N atoms for both the AA- and the AB-stacking. The repulsive interlayer interaction opens up a bandgap in Si$_2$C$_{14}$ while the attractive interlayer interaction in BC$_{14}$N induces a small indirect bandgap or overlaping of the valence conduction bands. Furthermore, the repulsive interaction decreases the Young modulus while the attractive interaction does not influence the Young modulus much. The stress-strain curves of both the AA- and the AB-stackings are suppressed compared to pure graphine bilayers. The optical response of Si$_2$C$_{14}$ is very sensitive to an applied electric field and an enrichment in the optical spectra is found at low energy. The enrichment is attributed to the bandgap opening and increased energy spacing between the $π{\text -}π^*$ bands. In BC$_{14}$N, the optical spectra are reduced due to the indirect bandgap or the overlapping of the $π{\text -}π^* $ bands. Last, a high Seebeck coefficient is observed due to the presence of a direct bandgap in Si$_2$C$_{14}$, while it is not much enhanced in BC$_{14}$N.

cond-mat.mes-hall↗

Properties of BSi$_6$N monolayers derived by first-principle computation

The buckling effects due to BN-bonds in BN-codoped silicene, BSi$_6$N, on structural stability, electronic band structure, and mechanical, thermal and optical properties are studied systematically by first-principle calculations within density functional theory. In the presence of BN-bonds, a high warping in BSi$_6$N indicating a high buckling effect is found due to the presence of a repulsive interaction between B and N atoms. It thus breaks the sublattice symmetry of silicene and opens up a bandgap. The high buckling of BSi$_6$N leads to a decrease in its stiffness and thus induces fractures at small values of applied strain. The finite bandgap caused by the BN-bonds leads to enhancement of the Seebeck coefficient and the figure of merit, and induces a redshift of a peak in the dielectric response. By increasing the distance between the B and N atoms i.e. for the BSi$_6$N without BN-bonds, a flatter BSi$_6$N is found compared to pristine silicene. The stiffness of the structure and the ultimate strain are increased. The breaking of the sublattice symmetry is very weak and a very small bandgap is revealed. As a result, the Seebeck coefficient and the figure of merit stay very small. A reduction in the optical response is seen due to an indirect bandgap.

cond-mat.mtrl-sci↗

Thermoelectric properties of tubular nanowires in the presence of a transverse magnetic field

We calculate the charge and heat current associate with electrons, generated by a temperature gradient and chemical potential difference between two ends of a tubular nanowire of 30 nm radius in the presence of an external magnetic field perpendicular to its axis. We consider a nanowire based on a semiconductor material, and use the Landauer-Bttiker approach to calculate the transport quantities. We obtain the variation of the Seebeck coefficient ($S$), thermal conductivity kappa, and the figure of merit ($ZT$), with respect to the temperature up to 20\,K, and with the magnetic field up to 3 T. In particular we show that the Seebeck coefficient can change sign in this domain of parameters. In addition $κ$ and $ZT$ have oscillations when the magnetic field increases. These oscillations are determined by the energy spectrum of the electrons.

cond-mat.mes-hall↗

Modeling electronic, mechanical, optical and thermal properties of graphene-like BC$_6$N materials: Role of prominent BN-bonds

We model monolayer graphene-like materials with BC$_6$N stoichiometry where the bonding between the B and the N atoms plays an important role for their physical and chemical properties. Two types of BC$_6$N are found based on the BN bonds: In the presence of BN bonds, an even number of $π$-bonds emerges indicating an aromatic structure and a large direct bandgap appears, while in the absence of BN bonds, an anti-aromatic structure with an odd-number of $π$-bonds is found resulting a direct small bandgap. The stress-strain curves shows high elastic moduli and tensile strength of the structures with BN-bonds, compared to structures without BN-bonds. Self-consistent field calculations demonstrate that BC$_6$N with BN-bonds is energetically more stable than structures without BN-bonds due to a strong binding energy between the B and the N atoms, while their phonon dispersion displays that BC$_6$N without BN-bonds has more dynamical stability. Furthermore, all the BC$_6$N structures considered show a large absorption of electromagnetic radiation with polarization parallel to the monolayers in the visible range. Finer detail of the absorption depend on the actual structures of the layers. A higher electronic thermal conductivity and specific heat are seen in BC$_6$N systems caused by hot carrier--assisted charge transport. This opens up a possible optimization for bolometric applications of graphene based material devices.

cond-mat.mes-hall↗

Effects of bonded and non-bonded B/N codoping of graphene on its stability,\break interaction energy, electronic structure, and power factor

We model boron and nitrogen doped/codoped monolayer graphene to study its stability, interaction energy, electronic and thermal properties using density functional theory. It is found that a doped graphene sheet with non-bonded B or N atoms induces an attractive interaction and thus opens up the bandgap. Consequently, the power factor is enhanced. Additionally, bonded B or N atoms in doped graphene generate a repulsive interaction leading to a diminished bandgap, and thus a decreased power factor. We emphasis that enhancement of the power factor is not very sensitive to the concentration of the boron and nitrogen atoms, but it is more sensitive to the positions of the B or N atoms in ortho, meta, and para positions of the hexagonal structure of graphene. In the B and N codoped graphene, the non-bonded dopant atoms have a weak attractive interaction and interaction leading to a small bandgap, while bonded doping atoms cause a strong attractive interaction and a large bandgap. As a result, the power factor of the graphene with non-bonded doping atoms is reduced while it is enhanced for graphene with bonded doping atoms.

cond-mat.mes-hall↗