arXiv subjects

Andrei V. Korol

Publications and source records attributed to Andrei V. Korol.

At least 19 recordsLinked to original sources

arXiv2026

Influence of bending parameters on crystalline undulator radiation peak stability for 530 MeV positron channelling

We investigate the stability of crystalline undulator radiation (CUR) peaks emitted by 530 MeV positron channelling in periodically bent C(110) crystals with varying bending amplitudes and bending periods. Relativistic molecular dynamics simulations were performed to quantify how these parameters affect the intensity and position of the CUR peak. The continuous potential approximation was used to identify isolines of constant peak energy, providing a reference for regions of spectral stability. MD results show that increasing the bending amplitude shifts the CUR peak to lower photon energies, while decreasing the period shifts it to higher energies, with both trends accompanied by enhanced dechannelling. For crystal parameters similar to recent experiments conducted at the MAinz MIkrotron (MAMI), the simulated CUR peak appears near 0.515 MeV. These results demonstrate that the CUR peak remains stable across a broad range of bending amplitudes and periods, providing quantitative estimates of the sensitivity of the emitted radiation to variations in the crystal bending parameters.

physics.acc-ph↗

arXiv2026

Structural effects of boron doping in diamond crystals for gamma-ray light-source applications: Insights from molecular dynamics simulations

Boron-doped diamond crystals (BDD, C$_{1-x}$B$_{x}$) exhibit exceptional mechanical strength, electronic tunability, and resistance to radiation damage. This makes them promising materials for use in gamma-ray crystal-based light sources. To better understand and quantify the structural distortions introduced by doping, which are critical for maintaining channelling efficiency, we perform atomistic-level molecular dynamics simulations on periodic C$_{1-x}$B$_{x}$ systems of various sizes. These simulations allow the influence of boron concentration on the lattice constant and the (110) and (100) inter-planar distances to be evaluated over the concentration range from pure diamond (0%) to 5% boron at room temperature (300 K). Linear relationships between both lattice constant and inter-planar distance with increasing dopant concentration are observed, with a deviation from Vegard's Law. This deviation is larger than that reported by other theoretical and computational studies; however, this may be attributed to an enhanced crystal quality over these studies, a vital aspect when considering gamma-ray crystal light source design. The methodology presented here incorporates several refinements to closely reflect the conditions of microwave plasma chemical vapour deposition (MPCVD) crystal growth. Validation of the methodology is provided through a comprehensive statistical analysis of the structure of our generated crystals. These results enable reliable atomistic modelling of doped diamond crystals and support their use in the design and fabrication of periodically bent structures for next-generation gamma-ray light source technologies.

cond-mat.mtrl-sci↗

arXiv2026

The impact of experimental conditions on the observation of channeling and crystalline undulator radiation

In this study, we present a comprehensive quantitative analysis of the radiation emitted by 855 MeV electrons propagating through an oriented diamond hetero-crystal. The crystal consists of two distinct segments: (i) a straight single-crystal diamond substrate, and (ii) a diamond layer that is periodically doped with boron atoms. The doping profiles were derived from precise experimental measurements of boron concentration obtained during the layer fabrication via Microwave Plasma Chemical Vapor Deposition (MPCVD). Our study systematically investigates the channelling and the crystalline undulator radiation, accounting for the different doping profiles in the undulating region. The simulations were conducted using the advanced MBNExplorer software package, which enables detailed modeling of particle trajectories and radiation emission. We report on good agreement with experiment and discuss remaining discrepancies providing possible explanations for them. The results obtained show that the radiation intensity is significantly affected by a range of factors, including the angular divergence of the incident beam, its orientation with respect to the target, the direction in which the emitted radiation is detected, and the choice of the doping profiles. These findings are important for optimising the design of crystalline undulators as novel gamma radiation light sources.

physics.acc-ph↗

arXiv2025

The impact of ionising collisions on channeling and radiation emission for high-energy electrons and positrons

This paper presents a quantitative analysis of the impact of inelastic collisions with atoms in a crystalline environment on the channeling efficiency and intensity of the channeling radiation for high-energy electrons and positrons passing through oriented crystalline targets. This analysis is based on numerical simulations of the channeling process, which were performed using the MBN Explorer software package. Ionising collisions are considered random, fast and local events, and are incorporated into the classical relativistic molecular dynamics framework according to the previously described algorithm. The case studies presented refer to 10 GeV electrons and positrons incident on single crystals of diamond and silicon, oriented along the (110) and (111) planes, with thicknesses of up to 1 mm for electrons and 6 mm for positrons. To elucidate the role of ionising collisions, simulations were performed with and without accounting for them. It is shown that, for electrons, both approaches lead to similar results with regard to both the channelling efficiency and the radiation intensity. In practical terms, this means that numerical simulations can be carried out without accounting for ionising collisions, which are much faster yet produce similar results. For positrons, the ionising collisions reduce significantly the channeling efficiency. However, their impact on the radiation intensity strongly depends on the opening angle of the cone within which the radiation emission is collected. A quantitative analysis of this feature is presented in the paper.

physics.acc-ph↗

arXiv2025

Electron and positron channeling and photon emission processes in boron doped periodically bent diamond

In this paper, theoretical and numerical analyses are conducted of the profiles of the planar (-110) crystallographic direction in the diamond layer doped with boron atoms. The planar profiles for periodic doping following several ideal dependencies of the boron concentration on the distance in the crystalline medium. Numerical simulations of the channeling and photon emission processes have been carried out for 855 MeV electron and 530 MeV positron beams incident on boron-doped diamond with a four-period bending profile in the samples grown at the European Synchrotron Radiation Facility (ESRF). The simulations were performed using the MBN Explorer software package. It is shown that the channeling efficiency and the intensity of the crystalline undulator radiation strongly depend on the orientation of the incident beam relative to the bent channel profile at the entrance to the boron-doped layer. For the same conditions at the crystal entrance, the intensity of radiation emitted by positrons is significantly higher than that for electrons.

physics.acc-ph↗

arXiv2024

Narrowband gamma-ray radiation generation by acoustically driven crystalline undulators

In this paper we present a novel scheme for the controlled generation of of tunable narrowband gamma-ray radiation by ultra-relativistic positron beams inside acoustically driven periodically bent crystals. A novel acoustic crystalline undulator is presented, in which excitation of a silicon single crystal along the (100) planar direction by a piezoelectric transducer periodically modulates the crystal lattice in the [100] axial direction. An ultra-relativistic positron beam is directed diagonally into the crystal and propagates along the (110) planes. The lattice modulation forces the positrons to follow periodic trajectories,resulting in the emission of undulator radiation in the MeV range. A computational methodology for the design and development of such acoustically based light sources is presented together with the results of simulations demonstrating the favourable properties of the proposed technology. The longitudinal acoustic strains induced in the crystal by high-frequency piezoelectric elements are calculated by finite element simulations. The resulting bending profiles of the deformed crystal planes are used as geometrical conditions in the relativistic molecular dynamics simulations that calculate the positron trajectories and the spectral distribution of the emitted radiation. The results show a strong enhancement of the emitted radiation within a narrow spectral band defined by the bending period, demonstrating the feasibility and potential of the proposed technology.

physics.acc-ph↗

arXiv2024

Intensive gamma-ray light sources based on oriented single crystals

The feasibility of gamma-ray light sources based on the channeling phenomenon of ultra-relativistic electrons and positrons in oriented single crystals is demonstrated using rigorous numerical modeling. Case studies are presented for 10 GeV and sub-GeV $e^{-}/e^{+}$ beams incident on $10^{-1}-10^0$ mm thick diamond and silicon crystals. It is shown that for moderate values of the beam average current ($\lesssim 10$ $μ$A) the average photon flux in the energy range $10^0-10^2$ MeV emitted within the $10^1-10^3$ $μ$rad cone and 1 \% bandwidth can be on the level of $10^{10}$ photon/s for electrons and $10^{10}-10^{12}$ photon/s for positrons. These values are higher than the fluxes available at modern laser-Compton gamma ray light sources.

physics.acc-ph↗

arXiv2024

Dopant concentration effects on Si$_{1-x}$Ge$_{x}$ crystals for emerging light-source technologies: A molecular dynamics study

In this study, we conduct atomistic-level molecular dynamics simulations on fixed-sized silicon-germanium (Si$_{1-x}$Ge$_{x}$) crystals to elucidate the effects of dopant concentration and temperature on the crystalline inter-planar distances. Our calculations consider a range of Ge dopant concentrations between pure Si (0%) and 15%, and for both the optimised system state and a temperature of 300 K. We observe a linear relationship between Ge concentration and inter-planar distance and lattice constant, in line with the approximation of Vegard's Law, and other experimental and computational results. These findings will be employed in conjunction with future studies to establish precise tolerances for use in crystal growth, crucial for the manufacture of crystals intended for emerging gamma-ray crystal-based light source technologies.

physics.atom-ph↗

arXiv2023

Multiple scattering of 855 MeV electrons in amorphous and crystalline silicon: simulations versus experiment

The angular distribution function of multiple scattering experienced by 855 MeV electrons passing through an amorphous silicon plate and an oriented silicon crystal has been studied by means of relativistic molecular dynamics simulations using two types of the potentials that describe electron-atom interaction. The differences in the angular distributions of the beam particles in both media are analysed. The results obtained are compared to the experimental data and to the results of Monte Carlo simulations.

physics.comp-ph↗

arXiv2023

All-atom relativistic molecular dynamics simulations of channeling and radiation processes in oriented crystals

We review achievements made in recent years in the field of numerical modeling of ultra-relativistic projectiles propagation in oriented crystals, radiation emission and related phenomena. This topic is highly relevant to the problem of designing novel gamma-ray light sources based on the exposure of oriented crystals to the beams of ultra-relativistic charged particles. The paper focuses on the approaches that allow for advanced computation exploration beyond the continuous potential and the binary collisions frameworks. A comprehensive description of the multiscale all-atom relativistic molecular dynamics approach implemented in the MBN Explorer package is given. Several case studies related to modeling of ultra-relativistic projectiles (electrons, positron and pions) channeling and photon emission in oriented straight, bent and periodically bent crystals are presented. In most cases, the input data used in the simulations, such as crystal orientation and thickness, the bending radii, periods and amplitudes, as well as the energies of the projectiles, have been chosen to match the parameters used in the accomplished and the ongoing experiments. Wherever available the results of calculations are compared with the experimental data and/or the data obtained by other numerical means.

physics.acc-ph↗

arXiv2022

Atomistic modelling of the channeling process with radiation reaction force included

Methodology is developed that incorporates the radiation reaction force into the relativistic molecular dynamics framework implemented in the MBN Explorer software package. The force leads to a gradual decrease in the projectile's energy E due to the radiation emission. This effect is especially strong for ultra-relativistic projectiles passing through oriented crystals where they experience the action of strong electrostatic fields as has been shown in recent experiments. A case study has been carried out for the initial approbation of the methodology developed. Simulations of the processes of planar channeling and photon emission have been performed for 150 GeV positrons in a 200 microns thick single oriented Si(110) crystal. Several regimes for the decrease in E have been established and characterized. Further steps in developing the code to include the necessary quantum corrections are identified and possible algorithmic modifications are proposed.

physics.acc-ph↗

arXiv2022

Atomistic modelling and characterizaion of light sources based on small-amplitude short-period periodically bent crystals

The feasibility of gamma-ray light sources based on the channeling phenomenon of ultrarelativistic electrons and positrons in oriented crystals that are periodically bent with Small Amplitude and Short Period (SASP) is demonstrated by means of rigorous numerical modelling that accounts for the interaction of a projectile with all atoms of the crystalline environment. Numerical data on the spectral distribution, brilliance, number of photons and power of radiation emitted by 10 GeV electron and positron beams passing through diamond, silicon and germanium crystals are presented and analyzed. The case studies presented in the paper refer to the FACET-II beams available at the SLAC facility. It is shown that the SASP bending gives rise to the radiation enhancement in the GeV photon energy range where the peak brilliance of radiation can be as high as on the 10^{24} photons/s/mrad^2/mm^2/0.1BW. The parameters of radiation can be tuned by varying the amplitude and period of bending.

physics.acc-ph↗

arXiv2022

Extremely brilliant crystal-based light sources

Brilliance of novel gamma-ray Crystal-based Light Sources (CLS) that can be constructed through exposure of oriented crystals to beams of ultra-relativistic charged particles is calculated basing on the atomistic scale numerical modeling of the channeling process. In an exemplary case study, the brilliance of radiation emitted in a diamond-based Crystalline Undulator LS by a 10 GeV positron beam available at present at the SLAC facility is computed. Intesity of CU radiation in the photon energy range 10^0 - 10^1 MeV, which is inaccessible to conventional synchrotrons, undulators and XFELs, greatly exceeds that of laser-Compton scattering LSs and can be higher than predicted in the Gamma Factory proposal to CERN. Construction of novel CLSs is a challenging task which constitutes a highly interdisciplinary field entangling a broad range of correlated activities. CLSs provide a low-cost altenative to conventional LSs and have enomorous number of applications.

physics.acc-ph↗

arXiv2022

Ultra-relativistic electron beams deflection by quasi-mosaic crystals

This paper provides an explanation of the key effects behind the deflection of ultra-relativistic electron beams by means of oriented quasi-mosaic Bent Crystals (qmBC). It is demonstrated that accounting for specific geometry of the qmBC and its orientation with respect to a collimated electron beam, its size and emittance is essential for an accurate quantitative description of experimental results on the beam deflection by such crystals. In an exemplary case study a detailed analysis of the recent experiment at the SLAC facility is presented. The methodology developed has enabled to understand the peculiarities in the measured distributions of the deflected electrons. This achievement constitutes an important progress in the efforts towards the practical realization of novel gamma-ray crystal-based light sources and puts new challenges for the theory and experiment in this research area.

physics.acc-ph↗

arXiv2020

Crystal-based intensive gamma-ray light sources

We discuss design and practical realization of novel gamma-ray Crystal-based Light Sources (CLS) that can be constructed through exposure of oriented crystals (linear, bent, periodically bent) to beams of ultrarelativistic charged particles. In an exemplary case study, we estimate brilliance of radiation emitted in a Crystalline Undulator (CU) LS by available positron beams. Intensity of CU radiation in the photon energy range $10^0-10^1$ MeV, which is inaccessible to conventional synchrotrons, undulators and XFELs, greatly exceeds that of laser-Compton scattering LSs and can be higher than predicted in the Gamma Factory proposal to CERN. Brilliance of CU-LSs can be boosted by up to 8 orders of magnitude through the process of superradiance by a pre-bunched beam. Construction of novel CLSs is a challenging task which constitutes a highly interdisciplinary field entangling a broad range of correlated activities. CLSs provide a low-cost alternative to conventional LSs and have enormous number of applications.

physics.acc-ph↗

arXiv2019

Channeling of electrons and positrons in straight and periodically bent diamond(110) crystals

In this paper we present the results of a systematic numerical analysis of the channeling properties of electrons and positrons in oriented straight and periodically bent diamond(110) crystals. We analyse dependence of the intensity of the radiation emitted on the projectile energy as well as on the bending amplitude. The analysis presented is based on the grounds of accurate numerical simulations of the channeling process. The simulation parameters, such as the crystal orientation, thickness and bending parameters of the crystals as well as the energy of the projectiles, were chosen to match those used in past and ongoing experiments. The peculiarities which appear in the radiation spectra are attributed to the interplay of various radiation mechanisms. The analysis performed can be used to predict and explain future experimental results.

physics.acc-ph↗

arXiv2019

Generalized correction to embedded-atom potentials for modeling equilibrium and non-equilibrium properties of metals

A modification of an embedded-atom method (EAM)-type potential is proposed for a quantitative description of equilibrium and non-equilibrium properties of metal systems within the molecular-dynamics framework. The modification generalizes the previously developed linear correction to EAM-type potentials [Sushko et al., J. Phys.: Condens. Matter \textbf{28}, 145201 (2016)] and asymptotically approaches zero at large interatomic distances. A general procedure for constructing this modification is outlined and its relation to the linear correction is elaborated. To benchmark this procedure, we examine the melting phase transition and several equilibrium properties of nanosystems made of silver, gold, and titanium. The simulations performed with the modified potential predict higher bulk melting temperatures of the metals and agree better with experimental values as compared to the original EAM-type potential. Our results show that the modification works well for metals with both cubic and hexagonal crystalline lattices. The Gupta potential is chosen as an illustrative case study but the modification proposed is general and can be applied to other widely-used potentials of the EAM type.

cond-mat.mes-hall↗

arXiv2018

Interplay and specific features of radiation mechanisms of electrons and positrons in crystalline undulators

We predict peculiar changes in spectral distributions of radiation emitted by ultra-relativistic positrons and electrons in periodically bent crystals with variation of the bending amplitude. It is shown that the changes, being sensitive to the projectile energy, manifest themselves differently for negatively and positively charged projectiles. We demonstrate that the features observed are due to the interplay of different radiation mechanisms occurring in periodically bent crystals. The observations are important for design, practical realization and channeling experiments with periodically bent crystals as the key element of the novel light sources. The analysis presented is based on the grounds of accurate numerical simulations of the channeling process.

physics.acc-ph↗