arXiv subjects

Andres Castellanos-Gomez

Publications and source records attributed to Andres Castellanos-Gomez.

At least 55 records · Page 3Linked to original sources

arXiv2020

Optical-based thickness measurement of MoO$_3$ nanosheets

Considering that two-dimensional (2D) molybdenum trioxide has acquired more attention in the last few years, it is relevant to speed up thickness identification of this material. We provide two fast and non-destructive methods to evaluate the thickness of MoO$_3$ flakes on SiO$_2$/Si substrates. First, by means of quantitative analysis of the apparent color of the flakes in optical microscopy images, one can make a first approximation of the thickness with an uncertainty of $\pm3$ nm. The second method is based on the fit of optical contrast spectra, acquired with micro-reflectance measurements, to a Fresnel law-based model that provides an accurate measurement of the flake thickness with $\pm2$ nm of uncertainty.

cond-mat.mtrl-sci↗

arXiv2020

InSe Schottky diodes based on van der Waals contacts

Two-dimensional semiconductors are excellent candidates for next-generation electronics and optoelec-tronics thanks to their electrical properties and strong light-matter interaction. To fabricate devices with optimal electrical properties, it is crucial to have both high-quality semiconducting crystals and ideal con-tacts at metal-semiconductor interfaces. Thanks to the mechanical exfoliation of van der Waals crystals, atomically-thin high-quality single-crystals can easily be obtained in a laboratory. However, conventional metal deposition techniques can introduce chemical disorder and metal-induced mid-gap states that induce Fermi level pinning and can degrade the metal-semiconductor interfaces, resulting in poorly performing devices. In this article, we explore the electrical contact characteristics of Au-InSe and graphite-InSe van der Waals contacts, obtained by stacking mechanically exfoliated InSe flakes onto pre-patterned Au or graphite electrodes without the need of lithography or metal deposition. The high quality of the metal-semiconductor interfaces obtained by van der Waals contact allows to fabricate high-quality Schottky di-odes based on the Au-InSe Schottky barrier. Our experimental observation indicates that the contact barrier at the graphite-InSe interface is negligible due to the similar electron affinity of InSe and graphite, while the Au-InSe interfaces are dominated by a large Schottky barrier.

cond-mat.mes-hall↗

arXiv2020

The role of traps in the photocurrent generation mechanism in thin In-Se photodetectors

Due to the excellent electrical transport properties and optoelectronic performance, thin indium selenide (InSe) has recently attracted attention in the field of 2D semiconducting materials. However, the mechanism behind the photocurrent generation in thin InSe photodetectors remains elusive. Here, we present a set of experiments aimed at explaining the strong scattering in the photoresponsivity values reported in the literature for thin InSe photodetectors. By performing optoelectronic measurements on thin InSe-based photodetectors operated under different environmental conditions we find that the photoresponsivity, the response time and the photocurrent power dependency are strongly correlated in this material. This observation indicates that the photogating effect plays an imporant role for thin InSe flakes, and it is the dominant mechanism in the ultra-high photoresponsivity of pristine InSe devices. In addition, when exposing the pristine InSe photodetectors to the ambient environment we observe a fast and irreversible change in the photoresponse, with a decrease in the photoresponsivity accompanied by an increase of the operating speed. We attribute this photodetector performance change (upon atmospheric exposure) to the decrease in the density of the traps present in InSe, due to the passivation of selenium vacancies by atmospheric oxygen species. This passivation is accompanied by a downward shift of the InSe Fermi level and by a decrease of the Fermi level pinning, which leads to an increase of the Schottky barrier between Au and InSe. Our study reveals the important role of traps induced by defects in tailoring the properties of devices based on 2D materials and offers a controllable route to design and functionalize thin InSe photodetectors to realize devices with either ultrahigh photoresposivity or fast operation speed.

cond-mat.mes-hall↗

arXiv2020

Strain engineering in single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2

Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS2, MoSe2, WS2 and WSe2. In this work we provide a thorough description of the technical details to perform uniaxial strain measurements on these two-dimensional semiconductors and we provide a straightforward calibration method to determine the amount of applied strain with high accuracy. We then employ reflectance spectroscopy to analyze the strain tunability of the electronic properties of single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2. Finally, we quantify the flake-to-flake variability by analyzing 15 different single-layer MoS2 flakes.

cond-mat.mtrl-sci↗

arXiv2020

Microheater actuators as a versatile platform for strain engineering in 2D materials

We present microfabricated thermal actuators to engineer the biaxial strain in two-dimensional (2D) materials. These actuators are based on microheater circuits patterned onto the surface of a polymer with a high thermal expansion coefficient. By running current through the microheater one can vary the temperature of the polymer and induce a controlled biaxial expansion of its surface. This controlled biaxial expansion can be transduced to biaxial strain to 2D materials, placed onto the polymer surface, which in turn induces a shift of the optical spectrum. Our thermal strain actuators can reach a maximum biaxial strain of 0.64 % and they can be modulated at frequencies up to 8 Hz. The compact geometry of these actuators results in a negligible spatial drift of 0.03 um/deg, which facilitates their integration in optical spectroscopy measurements. We illustrate the potential of this strain engineering platform to fabricate a strain-actuated optical modulator with single-layer MoS2.

physics.app-ph↗

arXiv2020

Symmetry breakdown in franckeite: spontaneous strain, rippling and interlayer moiré

Franckeite is a naturally occurring layered mineral with a structure composed of alternating stacks of SnS2-like and PbS-like layers. Although this superlattice is composed of a sequence of isotropic two-dimensional layers, it exhibits a spontaneous rippling that makes the material structurally anisotropic. We demonstrate that this rippling comes hand in hand with an inhomogeneous in-plane strain profile and anisotropic electrical, vibrational and optical properties. We argue that this symmetry breakdown results from a spatial modulation of the van der Waals interaction between layers due to the SnS2-like and PbS-like lattices incommensurability.

cond-mat.mes-hall↗

arXiv2020

MoS$_2$-on-paper optoelectronics: drawing photodetectors with van der Waals semiconductors beyond graphite

We fabricate paper-supported semiconducting devices by rubbing a layered molybdenum disulfide (MoS2) crystal onto a piece of paper, similarly to the action of drawing/writing with a pencil on paper. We show that the abrasion between the MoS2 crystal and the paper substrate efficiently exfoliates the crystals, breaking the weak van der Waals interlayer bonds and leading to the deposition of a film of interconnected MoS2 platelets. Employing this simple method, that can be easily extended to other 2D materials, we fabricate MoS2-on-paper broadband photodectectors with spectral sensitivity from the ultraviolet (UV) to the near-infrared (NIR). We also used these paper-based photodetectors to acquire pictures of objects by mounting the photodetectors in a homebuilt single-pixel camera setup.

physics.app-ph↗

arXiv2020

Biaxial strain tuning of interlayer excitons in bilayer MoS2

We show how the excitonic features of biaxial MoS2 flakes are very sensitive to biaxial strain. We find a lower bound for the gauge factors of the A exciton and B exciton of (-41 +- 2) meV/% and (-45 +- 2) meV/% respectively, which are larger than those found for single-layer MoS2. Interestingly, the interlayer exciton feature also shifts upon biaxial strain but with a gauge factor that is systematically larger than that found for the A exciton, (-48 +- 4) meV/%. We attribute this larger gauge factor for the interlayer exciton to the strain tunable van der Waals interaction due to the Poisson effect (the interlayer distance changes upon biaxial strain).

cond-mat.mes-hall↗

arXiv2020

A system to test 2D optoelectronic devices in high vacuum

The exploration of electronic and optoelectronic properties of two-dimensional (2D) materials has become one of the most attractive line of research since the isolation of graphene. Such 'all-surface materials' present a strong sensitivity to environmental conditions and thus characterization of the devices based on these materials usually requires measurement systems operating in high-vacuum. However, conventional optoelectronic probe-station testing systems are are not compatible with high vacuum operation and vacuum-compatible versions are rather expensive. Here, we present a high-vacuum system specifically designed to test electronic and optoelectronic devices based on 2D materials. This system can be implemented with low budget and it is mostly based on the assembly of commercially available standard vacuum and optic components. Despite the simplicity of this system we demonstrate full capabilities to characterize optoelectronic devices in a broad range of wavelengths with fast pumping/venting speed and possibility of modulating the device temperature (room temperature to ~150deg).

physics.app-ph↗

arXiv2020

Direct transformation of crystalline MoO$_3$ into few-layers MoS$_2$

We fabricate large-area atomically thin MoS$_2$ layers through the direct transformation of crystalline molybdenum MoS$_2$ (MoO$_3$) by sulfurization at relatively low temperatures. The obtained MoS2 sheets are polycrystalline (~10-20 nm single-crystal domain size) with areas of up to 300x300 um$^2$ with 2-4 layers in thickness and show a marked p-type behaviour. The synthesized films are characterized by a combination of complementary techniques: Raman spectroscopy, X-ray diffraction, transmission electron microscopy and electronic transport measurements.

physics.app-ph↗

arXiv2020

Tunable Photodetectors via in situ Thermal Conversion of TiS$_3$ to TiO$_2$

In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS$_3$), a layered semiconductor that has attracted much attention recently thanks to its quasi-1D electronic and optoelectronic properties and its direct bandgap of 1.1 eV. Heating TiS$_3$ in air above 300 °C gradually converts it into TiO$_2$, a semiconductor with a wide bandgap of 3.2 eV with ap-plications in photo-electrochemistry and catalysis. In this work, we investigate the controlled thermal oxidation of individual TiS$_3$ nanoribbons and its influence on the optoelectronic properties of TiS$_3$-based photodetectors. We observe a step-wise change in the cut-off wavelength from its pristine value ~1000 nm to 450 nm after subjecting the TiS$_3$ devices to subsequent thermal treatment cycles. Ab-initio and many-body calculations confirm an increase in the bandgap of titanium oxysulfide (TiO$_{2-x}$S$_x$) when increasing the amount of oxygen and reducing the amount of sulfur.

physics.app-ph↗

arXiv2020

Multi-terminal electronic transport in boron nitride encapsulated TiS$_3$ nanosheets

We have studied electrical transport as a function of carrier density, temperature and bias in multi-terminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS$_3$) sheets. Through the encapsulation with h-BN, we observe metallic behavior and high electron mobilities. Below $\sim$60 K an increase in the resistance, and non-linear transport with plateau-like features in the differential resistance are present, in line with the expected charge density wave (CDW) formation. Importantly, the critical temperature and the threshold field of the CDW phase can be controlled through the back-gate.

cond-mat.mtrl-sci↗

arXiv2020

InSe: a two-dimensional semiconductor with superior flexibility

Two-dimensional Indium Selenide (InSe) has attracted extensive attention recently due to its record-high charge carrier mobility and photoresponsivity in the fields of electronics and optoelectronics. Nevertheless, the mechanical properties of this material in the ultra-thin regime have not been investigated yet. Here, we present our efforts to determine the Young's modulus of thin InSe (~1-2 layers to ~40 layers) flakes experimentally by using buckling-based methodology. We find that the Young's modulus has a value of 23.1 +- 5.2 GPa, one of the lowest values reported up to date for crystalline two-dimensional materials. This superior flexibility can be very attractive for different applications, such as strain engineering and flexible electronics.

physics.app-ph↗

arXiv2020

A system for the deterministic transfer of 2D materials under inert environmental conditions

The isolation of air-sensitive two-dimensional (2D) materials and the race to achieve a better control of the interfaces in van der Waals heterostructures has pushed the scientific community towards the development of experimental setups that allow to exfoliate and transfer 2D materials under inert atmospheric conditions. These systems are typically based on over pressurized N2 of Ar gloveboxes that require the use of very thick gloves to operate within the chamber or the implementation of several motorized micro-manipulators. Here, we set up a deterministic transfer system for 2D materials within a gloveless anaerobic chamber. Unlike other setups based on over-pressurized gloveboxes, in our system the operator can manipulate the 2D materials within the chamber with bare hands. This experimental setup allows us to exfoliate 2D materials and to deterministically place them at a desired location with accuracy in a controlled O2-free and very low humidity (<2% RH) atmosphere. We illustrate the potential of this system to work with air-sensitive 2D materials by comparing the stability of black phosphorus and perovskite flakes inside and outside the anaerobic chamber.

physics.ins-det↗

arXiv2020

An inexpensive system for the deterministic transfer of 2D materials

The development of systems for the deterministic transfer of two-dimensional (2D) materials have undoubtedly contributed to a great advance in the 2D materials research. In fact, they have made it possible to fabricate van der Waals heterostructures and 2D materials-based devices with complex architectures. Nonetheless, as far as we know, the amount of papers in the literature providing enough details to reproduce these systems by other research groups is very scarce in the literature. Moreover, these systems typically require the use of expensive optical and mechanical components hampering their applicability in research groups with low budget. Here we demonstrate how a deterministic placement system for 2D materials set up with full capabilities can be implemented under 900 Eur which can be easily implemented in low budget labs and educational labs.

physics.ed-ph↗

arXiv2019

Tailored Graphenic Structures Directly Grown on Titanium Oxide Boost the Interfacial Charge Transfer

The successful application of titanium oxide-graphene hybrids in the fields of photocatalysis, photovoltaics and photodetection strongly depends on the interfacial contact between both materials. The need to provide a good coupling between the enabling conductor and the photoactive phase prompted us to directly grow conducting graphenic structures on TiO2 crystals. We here report on the direct synthesis of tailored graphenic structures by using Plasma Assisted Chemical Vapour Deposition that present a clean junction with the prototypical titanium oxide (110) surface. Chemical analysis of the interface indicates chemical bonding between both materials. Photocurrent measurements under UV light illumination manifest that the charge transfer across the interface is efficient. Moreover, the influence of the synthesis atmosphere, gas precursor (C2H2) and diluents (Ar, O2), on the interface and on the structure of the as-grown graphenic material is assessed. The inclusion of O2 promotes vertical growth of partially oxidized carbon nanodots/rods with controllable height and density. The deposition with Ar results in continuous graphenic films with low resistivity (6.8x10-6 ohm x m). The synthesis protocols developed here are suitable to produce tailored carbon-semiconductor structures on a variety of practical substrates as thin films, pillars or nanoparticles.

physics.app-ph↗

arXiv2019

Revisiting the buckling metrology method to determine the Young's modulus of 2D materials

Measuring the mechanical properties of two-dimensional materials is a formidable task. While regular electrical and optical probing techniques are suitable even for atomically thin materials, conventional mechanical tests cannot be directly applied. Therefore, new mechanical testing techniques need to be developed. Up to now, the most widespread approaches require micro-fabrication to create freely suspended membranes, rendering their implementation complex and costly. Here, we revisit a simple yet powerful technique to measure the mechanical properties of thin films. The buckling metrology method, that does not require the fabrication of freely suspended structures, is used to determine the Young's modulus of several transition metal dichalcogenides (MoS2, MoSe2, WS2 and WSe2) with thicknesses ranging from 3 to 10 layers. We critically compare the obtained values for the Young's modulus and their uncertainty, finding that this simple technique provides results, which are in good agreement with those reported using other highly sophisticated testing methods. By comparing the cost, complexity and time required for the different methods reported in the literature, the buckling metrology method presents certain advantages that makes it an interesting mechanical test tool for 2D materials.

cond-mat.mtrl-sci↗

arXiv2019

Thickness determination of MoS2, MoSe2, WS2 and WSe2 on transparent stamps used for deterministic transfer of 2D materials

Here, we propose a method to determine the thickness of the most common transition metal dichalcogenides (TMDCs) placed on the surface of transparent stamps, used for the deterministic placement of two-dimensional materials, by analyzing the red, green and blue channels of transmission-mode optical microscopy images of the samples. In particular, the blue channel transmittance shows a large and monotonic thickness dependence, making it a very convenient probe of the flake thickness. The method proved to be robust given the small flake-to-flake variation and the insensitivity to doping changes of MoS2. We also tested the method for MoSe2, WS2 and WSe2. These results provide a reference guide to identify the number of layers of this family of materials on transparent substrates only using optical microscopy.

physics.app-ph↗