Andres David Peña Unigarro

arXiv2026

Spin- and Angle-resolved Photoelectron Spectroscopy Study of the Quantum Spin Hall Insulator Bismuthene and its Precursor Phase

Recent studies have revealed that a confined bismuth layer at the graphene/SiC interface can be reversibly switched between a topologically trivial precursor phase and the quantum spin Hall insulator bismuthene. Here, we present a detailed spin- and angle-resolved photoelectron spectroscopy study of both structures, resolving the spin texture of their low-energy electronic states. Owing to the strong intrinsic spin-orbit coupling of bismuth and the asymmetric confinement potential at the interface, the valence bands of both structures are Rashba-split. We demonstrate the expected spin-momentum locking for both phases and Kramers' doublets through the investigation of the valence bands' spin polarization at multiple positions in reciprocal space.

cond-mat.mtrl-sci↗

arXiv2025

Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface

Quantum Spin Hall Insulators (QSHI) have been extensively studied both theoretically and experimentally because they exhibit robust helical edge states driven by spin-orbit coupling and offer the potential for applications in spintronics through dissipationless spin transport. However, to realize devices, it is indispensable to gain control over the interaction of the active layer with the substrate, and to protect it from environmental influences. Here we show that a single layer of elemental Bi, formed by intercalation of an epitaxial graphene buffer layer on SiC(0001), is a promising candidate for a QSHI. This layer can be reversibly switched between an electronically inactive precursor state and a ``bismuthene state'', the latter exhibiting the predicted band structure of a true two-dimensional bismuthene layer. Switching is accomplished by hydrogenation (dehydrogenation) of the sample, i.e., a partial passivation (activation) of dangling bonds of the SiC substrate, causing a lateral shift of Bi atoms involving a change of the adsorption site. In the bismuthene state, the Bi honeycomb layer is a prospective QSHI, inherently protected by the graphene sheet above and the H-passivated substrate below. Thus, our results represent an important step towards protected QSHI systems beyond graphene.

cond-mat.mes-hall↗