SearcharxivSearch

arXiv subjects

Andrew C. Meng

Publications and source records attributed to Andrew C. Meng.

3 recordsLinked to original sources

Using superpixels for interpretable feature reduction in large 2D diffraction datasets

Large 2D diffraction datasets, consisting of hundreds or thousands of measurements, are commonly acquired with 4D-STEM electron diffraction or at synchrotron X-ray beamlines. Machine learning and artificial intelligence offer great promise for analyzing these datasets. However, the sheer volume of data presents a significant data processing bottleneck. Cropping the detector and pixel binning are standard ways to reduce data size. Here we propose grouping and averaging pixels into superpixels of variable area. High-information regions are sampled densely, while low-information areas are collected into larger superpixels. In the process, symmetries in the data are captured and exploited, making this approach suitable for preprocessing 2D diffraction data. We compare two variance-minimizing methods: K-means clustering (top-down) and agglomerative clustering (bottom-up) and demonstrate superior scaling and interpretability for the bottom-up method. As these methods are distance-based, we demonstrate that the construction of superpixels can be accelerated using Gaussian random projection. Finally we show over 100-fold acceleration for phase mapping with Non-negative matrix factorization on a 4D-STEM dataset when superpixels are used as a preprocessing step.

cond-mat.mtrl-sci

Ultra-fast Vacancy Migration: A Novel Approach for Synthesizing Sub-10 nm Crystalline Transition Metal Dichalcogenide Nanocrystals

Two-dimensional materials, such as transition metal dichalcogenides (TMDCs), have the potential to revolutionize the field of electronics and photonics due to their unique physical and structural properties. This research presents a novel method for synthesizing crystalline TMDCs crystals with < 10 nm size using ultra-fast migration of vacancies at elevated temperatures. Through in-situ and ex-situ processing and using atomic-level characterization techniques, we analyze the shape, size, crystallinity, composition, and strain distribution of these nanocrystals. These nanocrystals exhibit electronic structure signatures that differ from the 2D bulk i.e., uniform mono and multilayers. Further, our in-situ, vacuum-based synthesis technique allows observation and comparison of defect and phase evolution in these crystals formed under van der Waals heterostructure confinement versus unconfined conditions. Overall, this research demonstrates a solid-state route to synthesizing uniform nanocrystals of TMDCs and lays the foundation for materials science in confined 2D spaces under extreme conditions.

cond-mat.mtrl-sci

Low Resistance III-V Hetero-contacts to N-Ge

We experimentally study III-V/Ge heterostructure and demonstrate InGaAs hetero-contacts to n-Ge with a wide range of In % and achieve low contact resistivity ($ρ_C$) of $5\times10^{-8} Ω\cdot cm^2$ for Ge doping of $3 \times 10^{19} cm^{-3}$. This results from re-directing the charge neutrality level (CNL) near the conduction band and benefiting from low effective mass for high electron transmission. For the first time, we observe that the heterointerface presents no temperature dependence despite the two different conduction minimum valley locations of III-V ($Γ$-valley) and Ge (L-valley), which potentially stems from elastic trap-assisted tunneling through defect states at the interface generated by dislocations. The hetero-interface plays a dominant role in the overall $ρ_C$ below $\approx 1 \times 10^{-7} Ω\cdot cm^2$, which can be further improved with large active dopant concentration in Ge by co-doping.

cond-mat.mtrl-sci