arXiv subjects

Andrew D. Fefferman

Publications and source records attributed to Andrew D. Fefferman.

5 recordsLinked to original sources

arXiv2020

Nanomechanical damping via electron-assisted relaxation of two-level systems

We report on measurements of dissipation and frequency noise at millikelvin temperatures of nanomechanical devices covered with aluminum. A clear excess damping is observed after switching the metallic layer from superconducting to the normal state with a magnetic field. Beyond the standard model of internal tunneling systems coupled to the phonon bath, here we consider the relaxation to the conduction electrons together with the nature of the mechanical dispersion laws for stressed/unstressed devices. With these key ingredients, a model describing the relaxation of two-level systems inside the structure due to interactions with electrons and phonons with well separated timescales captures the data. In addition, we measure an excess 1/f-type frequency noise in the normal state, which further emphasizes the impact of conduction electrons.

cond-mat.mes-hall↗

arXiv2018

Measuring frequency fluctuations in nonlinear nanomechanical resonators

Advances in nanomechanics within recent years have demonstrated an always expanding range of devices, from top-down structures to appealing bottom-up MoS$_2$ and graphene membranes, used for both sensing and component-oriented applications. One of the main concerns in all of these devices is frequency noise, which ultimately limits their applicability. This issue has attracted a lot of attention recently, and the origin of this noise remains elusive up to date. In this Letter we present a very simple technique to measure frequency noise in nonlinear mechanical devices, based on the presence of bistability. It is illustrated on silicon-nitride high-stress doubly-clamped beams, in a cryogenic environment. We report on the same $T/f$ dependence of the frequency noise power spectra as reported in the literature. But we also find unexpected {\it damping fluctuations}, amplified in the vicinity of the bifurcation points; this effect is clearly distinct from already reported nonlinear dephasing, and poses a fundamental limit on the measurement of bifurcation frequencies. The technique is further applied to the measurement of frequency noise as a function of mode number, within the same device. The relative frequency noise for the fundamental flexure $δf/f_0$ lies in the range $0.5 - 0.01~$ppm (consistent with literature for cryogenic MHz devices), and decreases with mode number in the range studied. The technique can be applied to {\it any types} of nano-mechanical structures, enabling progresses towards the understanding of intrinsic sources of noise in these devices.

cond-mat.mes-hall↗

arXiv2017

Classical decoherence in a nanomechanical resonator

Decoherence is an essential mechanism that defines the boundary between classical and quantum behaviours, while imposing technological bounds for quantum devices. Little is known about quantum coherence of mechanical systems, as opposed to electromagnetic degrees of freedom. But decoherence can also be thought of in a purely classical context, as the loss of phase coherence in the classical phase space. Indeed the bridge between quantum and classical physics is under intense investigation, using in particular classical nanomechanical analogues of quantum phenomena. In the present work, by separating pure dephasing from dissipation, we quantitatively model the classical decoherence of a mechanical resonator: through the experimental control of frequency fluctuations, we engineer artificial dephasing. Building on the fruitful analogy introduced between spins/quantum bits and nanomechanical modes, we report on the methods available to define pure dephasing in these systems, while demonstrating the intrinsic almost-ideal properties of silicon-nitride beams. These experimental and theoretical results, at the boundary between classical nanomechanics and quantum information fields, are prerequisite in the understanding of decoherence processes in mechanical devices, both classical and quantum.

cond-mat.mes-hall↗

arXiv2015

The thermal conductivity of silicon nitride membranes is not sensitive to stress

We have measured the thermal properties of suspended membranes from 10 K to 300 K for two amplitudes of internal stress (about 0.1 GPa and 1 GPa) and for two different thicknesses (50 nm and 100 nm). The use of the original 3 ω-Volklein method has allowed the extraction of both the specific heat and the thermal conductivity of each SiN membrane over a wide temperature range. The mechanical properties of the same substrates have been measured at helium temperatures using nanomechanical techniques. Our measurements show that the thermal transport in freestanding SiN membranes is not affected by the presence of internal stress. Consistently, mechanical dissipation is also unaffected even though Qs increase with increasing tensile stress. We thus demonstrate that the theory developed by Wu and Yu [Phys. Rev. B 84, 174109 (2011)] does not apply to this amorphous material in this stress range. On the other hand, our results can be viewed as a natural consequence of the "dissipation dilution" argument [Y. L. Huang and P. R. Saulson, Rev. Sci. Instrum. 69, 544 (1998)] which has been introduced in the context of mechanical damping.

cond-mat.mes-hall↗

arXiv2012

The giant plasticity of a quantum crystal

When submitted to large stresses at high temperature, usual crystals may irreversibly deform. This phenomenon is known as plasticity and it is due to the motion of crystal defects such as dislocations. We have discovered that, in the absence of impurities and in the zero temperature limit, helium 4 crystals present a giant plasticity that is anisotropic and reversible. Direct measurements on oriented single crystals show that their resistance to shear nearly vanishes in one particular direction because dislocations glide freely parallel to the basal planes of the hexagonal structure. This plasticity disappears as soon as traces of helium 3 impurities bind to the dislocations or if their motion is damped by collisions with thermal phonons.

cond-mat.mtrl-sci↗