arXiv subjects

Andrew H. Comstock

Publications and source records attributed to Andrew H. Comstock.

7 recordsLinked to original sources

arXiv2026

Persistent Interfacial Topological Hall Effect Demonstrating Electrical Readout of Topological Spin Structures in Insulators

Conventional topological Hall effects (THE) require conducting magnets, leaving insulating systems largely inaccessible. Here we introduce the interfacial topological Hall effect (ITHE), where the noncoplanar spin textures of insulating magnets are imprinted onto an adjacent heavy metal via the magnetic proximity effect (MPE) and detected electrically. In Pt/h-LuFeO3 bilayers, h-LuFeO3 hosts a topological spin structure robust against high magnetic fields, arising from a 120° triangular spin lattice with small spin canting that yields nontrivial topology but minimal magnetization. This generates a giant Hall response in Pt up to 0.5% of the longitudinal resistivity and a Hall-conductivity/magnetization ratio above 2 V^{-1}, clearly distinguishable from the spin Hall Hanle effect background. Field- and temperature-dependent analysis further reveals that Pt nanoclusters inherit topological textures from h-LuFeO3 via MPE. Unlike the conventional THE narrow peak-and-dip features, ITHE in Pt/h-LuFeO3 persists across a broad magnetic field range up to 14 T, demonstrating the exceptional stability of the underlying topological spin structure. This establishes ITHE as a powerful and sensitive probe for topological magnetism in ultrathin insulating films and paves the way for new spintronic applications.

cond-mat.mtrl-sci↗

arXiv2026

Modulating Surface Acoustic Wave Generation through Superconductivity

Surface acoustic waves (SAWs), with their five orders-of-magnitude slower propagation velocity, allow for considerably shorter wavelengths at the same frequency compared to electromagnetic waves. The short wavelengths allow for device miniaturization and on-chip integration. The generic design of these devices involve piezoelectric substrates with comblike arrays of Al or Au electrodes known as interdigitated transducers deposited on the surface. However, Al and Au both have shortcomings at the cryogenic temperatures required for quantum applications, namely the formation of two-level systems and the lack of superconductivity perpetuating Ohmic losses, respectively. In this work, SAWs are generated in the high-MHz to low-GHz range using niobium nitride (NbN) interdigitated transducers (IDTs) and Bragg reflectors. We demonstrate the fabrication of acoustic devices through photolithography and reactive ion etching (RIE). The sharp transition between superconducting and normal states and the corresponding change in SAW transmission allows for fine control of the 'on' (superconducting) and 'off' (normal) states of NbN, with a Δ_T = K separating the transmission minimum and maximum. We demonstrate a 16x difference in transmission between the 'on' and 'off' states of the device. The SAW transmission behavior mirrors the change in resistance of NbN at its Tc. These findings open up new possibilities for the integration of NbN SAW resonators into existing quantum architectures based on NbN and a method for adjusting transmission properties independent of applied voltage.

cond-mat.mes-hall↗

arXiv2025

Chirality-induced magnetoresistance in hybrid organic-inorganic perovskite semiconductors

The combination of semiconducting properties and synthetically tunable chirality in chiral metal halide semiconductors (CMHS) offer a compelling platform for room temperature control over electronic spin properties, leveraging effects such as chirality-induced spin selectivity (CISS) for the development of new opto-spintronic functionalities. We report room-temperature CISS-induced magnetoresistance (CISS-MR) exceeding 100% for spin valves in a configuration consisting of a ferromagnet (FM), tunneling barrier, and CMHS. The high CISS-MR is attributed to interfacial spin-selective tunneling barrier induced by the chirality, which can produce current dissymmetry factors that surpass the limit imposed by the Jullière model governed by the intrinsic spin polarization of the adjacent FM contact. The CISS-MR exhibits a strong dependence on the CMHS composition, revealing a structure-property relationship between CISS and structural chirality. The observed exceptionally large tunneling MR response differentiates from a subtle anisotropic MR arising from the proximity effect at the FM/CMHS interface in the absence of a tunneling barrier. Our study provides insights into charge-to-spin interconversion in chiral semiconductors, offering materials design principles to control and enhance CISS response and utilize it in functional platforms.

cond-mat.mtrl-sci↗

arXiv2025

Spin-to-charge conversion at KTaO3(111) interfaces

Rashba spin-orbit coupling locks the spin with momentum of charge carriers at the broken inversion interfaces, which could generate a large spin galvanic response. Here, we demonstrate spin-to-charge conversion (inverse Rashba-Edelstein effect) in KTaO3(111) two-dimensional electron systems. We explain the results in the context of electronic structure, orbital character, and spin texture at the KTaO3(111) interfaces. We also show that the angle dependence of the spin-to-charge conversion on in-plane magnetic field exhibits a nontrivial behavior which matches the symmetry of the Fermi states. Results point to opportunities to use spin-to-charge conversion as a tool to investigate the electronic structure and spin texture.

cond-mat.mtrl-sci↗

arXiv2023

Giant interfacial spin-Hall angle from Rashba-Edelstein effect revealed by the spin-Hall Hanle processes

The Rashba-Edelstein effect (REE), which generates interfacial spin polarization and subsequent spin current, is a compelling spin-charge conversion mechanism for spintronics applications, since it is not limited by the elemental spin-orbit coupling. In this work, we demonstrate REE at Pt/ferroelectric interfaces using the recently elucidated spin-Hall Hanle effects (SHHE), in which a Larmor precession of spin polarization in a diffusion process from the interface manifest as magnetoresistance and Hall effect. We show that REE leads to a three-fold enhancement of the effective spin Hall angle in ferroelectric interface Pt/h-LuFeO3 compared to that of Pt /Al2O3, although the difference in the spin relaxation time is negligible. Modeling using SHHEs involving REE as an additional source of interfacial polarization suggests that REE can lead to an interfacial spin Hall angle (~0.3) that is one order of magnitude larger than the bulk value of Pt. Our results demonstrate that a ferroelectric interface can produce large spin-charge conversion and that SHHEs are a sensitive tool for characterizing interfacial spin transport properties.

cond-mat.mes-hall↗

arXiv2023

Tunable Magnon-Photon Coupling by Magnon Band Gap in a Layered Hybrid Perovskite Antiferromagnet

Tunability of coherent coupling between fundamental excitations is an important prerequisite for expanding their functionality in hybrid quantum systems. In hybrid magnonics, the dipolar interaction between magnon and photon usually persists and cannot be switched off. Here, we demonstrate this capability by coupling a superconducting resonator to a layered hybrid perovskite antiferromagnet, which exhibits a magnon band gap due to its intrinsic Dzyaloshinskii-Moriya interaction. The pronounced temperature sensitivity of the magnon band gap location allows us to set the photon mode within the gap and to disable magnon-photon hybridization. When the resonator mode falls into the magnon band gap, the resonator damping rate increases due to the nonzero coupling to the detuned magnon mode. This phenomena can be used to quantify the magnon band gap using an analytical model. Our work brings new opportunities in controlling coherent information processing with quantum properties in complex magnetic materials.

cond-mat.mtrl-sci↗

arXiv2022

Comprehensive Demonstration of Spin-Hall Hanle Effects in Epitaxial Pt Thin Films

We demonstrate a nonlinear Hall effect due to the boundary spin accumulation in Pt films grown on Al2O3 substrates. This Hall effect and the previously demonstrated Hanle magnetoresistance provide a complete picture of the spin-precession control of the spin and charge transport at the boundary of a spin-orbit coupled material, which we refer to as spin-Hall Hanle effects (SHHE). We also show that the SHHE can be employed to measure the spin diffusion length, the spin-Hall angle, and the spin relaxation time of heavy metal without the need of magnetic interface or the input from other measurements. The comprehensive demonstration of SHHE in such a simple system suggests they may be ubiquitous and needs to be considered for unravelling the spin and charge transport in more complex thin film structures of spin-orbit coupled materials.

cond-mat.mtrl-sci↗