arXiv subjects

Andrew J. Wagner

Publications and source records attributed to Andrew J. Wagner.

3 recordsLinked to original sources

arXiv2024

12-spin-qubit arrays fabricated on a 300 mm semiconductor manufacturing line

Intels efforts to build a practical quantum computer are focused on developing a scalable spin-qubit platform leveraging industrial high-volume semiconductor manufacturing expertise and 300 mm fabrication infrastructure. Here, we provide an overview of the design, fabrication, and demonstration of a new customized quantum test chip, which contains 12-quantum-dot spin-qubit linear arrays, code named Tunnel Falls. These devices are fabricated using immersion and extreme ultraviolet lithography (EUV), along with other standard high-volume manufacturing (HVM) processes, as well as production-level process control. We present key device features and fabrication details, as well as qubit characterization results confirming device functionality. These results corroborate our fabrication methods and are a crucial step towards scaling of extensible 2D qubit array schemes.

cond-mat.mes-hall↗

arXiv2024

Probing single electrons across 300 mm spin qubit wafers

Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid state electronic devices, integrating millions of qubits in a single processor will require device fabrication to reach a scale comparable to that of the modern CMOS industry. Equally importantly, the scale of cryogenic device testing must keep pace to enable efficient device screening and to improve statistical metrics like qubit yield and voltage variation. Spin qubits based on electrons in Si have shown impressive control fidelities but have historically been challenged by yield and process variation. Here we present a testing process using a cryogenic 300 mm wafer prober to collect high-volume data on the performance of hundreds of industry-manufactured spin qubit devices at 1.6 K. This testing method provides fast feedback to enable optimization of the CMOS-compatible fabrication process, leading to high yield and low process variation. Using this system, we automate measurements of the operating point of spin qubits and probe the transitions of single electrons across full wafers. We analyze the random variation in single-electron operating voltages and find that the optimized fabrication process leads to low levels of disorder at the 300 mm scale. Together these results demonstrate the advances that can be achieved through the application of CMOS industry techniques to the fabrication and measurement of spin qubit devices.

quant-ph↗

arXiv2010

Experimental study of a planar atmospheric-pressure plasma operating in the microplasma regime

Electrical characterization of a nonthermal radio-frequency atmospheric-pressure microplasma in a parallel plate configuration has shown that reducing electrode gap into the submillimeter range increases current and power density at a reduced voltage as compared to similar plasmas at larger electrode gaps which have no gap dependence. Calculation of sheath thickness and electric fields in the sheath and in the bulk demonstrate a dependence on the electrode gap as it is reduced into the submillimeter regime, indicating a distinct regime of operation.

physics.plasm-ph↗