arXiv subjects

Andrew S. Sachrajda

Publications and source records attributed to Andrew S. Sachrajda.

3 recordsLinked to original sources

arXiv2021

Magnetic tuning of tunnel coupling between InAsP double quantum dots in InP nanowires

We study experimentally and theoretically the in-plane magnetic field dependence of the coupling between dots forming a vertically stacked double dot molecule. The InAsP molecule is grown epitaxially in an InP nanowire and interrogated optically at millikelvin temperatures. The strength of interdot tunneling, leading to the formation of the bonding-antibonding pair of molecular orbitals, is investigated by adjusting the sample geometry. For specific geometries, we show that the interdot coupling can be controlled in-situ using a magnetic field-mediated redistribution of interdot coupling strengths. This is an important milestone in the development of qubits required in future quantum information technologies.

quant-ph↗

arXiv2009

Transport Detection of Quantum Hall Fluctuations in Graphene

Low temperature magnetoconductance measurements were made in the vicinity of the charge neutrality point. Two origins for the fluctuations were identified close to the CNP. At very low magnetic fields there exist only mesoscopic magneto-conductance quantum interference features which develop rapidly as a function of density. At slightly higher fields (> 0.5T), close to the CNP, additional fluctuations track the quantum Hall sequence expected for monolayer graphene. These additional features are attributed to effects of locally charging individual quantum Hall (QH) localized states. These effects reveal a precursor to the quantum Hall effect (QHE) since, unlike previous transport observations of QH dots charging effects, they occur in the absence of quantum Hall plateaus or Shubnikov- de Haas (SdH) oscillations. From our transport data we are able to extract parameters that characterize the inhomogeneities in our device.

cond-mat.mes-hall↗

arXiv2007

Topological Hunds rules and the electronic properties of a triple lateral quantum dot molecule

We analyze theoretically and experimentally the electronic structure and charging diagram of three coupled lateral quantum dots filled with electrons. Using the Hubbard model and real-space exact diagonalization techniques we show that the electronic properties of this artificial molecule can be understood using a set of topological Hunds rules. These rules relate the multi-electron energy levels to spin and the inter-dot tunneling $t$, and control charging energies. We map out the charging diagram for up to N=6 electrons and predict a spin-polarized phase for two holes. The theoretical charging diagram is compared with the measured charging diagram of the gated triple-dot device.

cond-mat.mes-hall↗