Theory of Morphogenesis
A model of morphogenesis is proposed based on seven explicit postulates. The mathematical import and biological significance of the postulates are explored and discussed.
q-bio.QM↗
arXiv subjects
Andrey Minarsky
Publications and source records attributed to Andrey Minarsky.
Impact ionization fronts in Si diodes: Numerical evidence of superfast propagation due to nonlocalized preionization
We present numerical evidence of a novel propagation mode for superfast impact ionization fronts in high-voltage Si $p^+$-$n$-$n^+$ structures. In nonlinear dynamics terms, this mode corresponds to a pulled front propagating into an unstable state in the regime of nonlocalized initial conditions. Before the front starts to travel, field-ehanced emission of electrons from deep-level impurities preionizes initially depleted $n$ base creating spatially nonuniform free carriers profile. Impact ionization takes place in the whole high-field region. We find two ionizing fronts that propagate in opposite directions with velocities up to 10 times higher than the saturated drift velocity.
cond-mat.mtrl-sci↗
Theory of superfast fronts of impact ionization in semiconductor structures
We present an analytical theory for impact ionization fronts in reversely biased p^{+}-n-n^{+} structures. The front propagates into a depleted n base with a velocity that exceeds the saturated drift velocity. The front passage generates a dense electron-hole plasma and in this way switches the structure from low to high conductivity. For a planar front we determine the concentration of the generated plasma, the maximum electric field, the front width and the voltage over the n base as functions of front velocity and doping of the n base. Theory takes into account that drift velocities and impact ionization coefficients differ between electrons and holes, and it makes quantitative predictions for any semiconductor material possible.
cond-mat.mtrl-sci↗