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Andrey V. Matetskiy

Publications and source records attributed to Andrey V. Matetskiy.

6 recordsLinked to original sources

Charge-to-spin conversion in epitaxial and polycrystalline Bi and Bi/Ag layers

Bi is predicted to be an efficient generator of spin-orbit torques (SOTs), with charge-to-spin conversion efficiency comparable to those of prototypical heavy metals, such as Ta, W, and Pt. However, experimental reports provide widely scattered interconversion efficiencies, while the origin of the large conversion signal in Bi/Ag bilayers remains controversial. Here, we investigate charge-to-spin conversion in epitaxial and polycrystalline Bi-based magnetic heterostructures by measuring the damping-like SOT using magneto-optic Kerr effect magnetometry, complemented by structural and spectroscopic analyses and harmonic Hall resistance measurements. We show that inserting an Ag spacer between Bi(001) and metallic ferromagnets (FeCo or Ni) enhances the SOT efficiency by more than one order of magnitude, reaching an effective spin Hall conductivity of approximately $2 \times 10^5 (\hbar/2e)$ S/m, in excellent agreement with theoretical expectations for bulk Bi. This enhancement can be consistently explained by the preservation of the structural and chemical integrity of Bi, otherwise compromised by the direct deposition of a ferromagnetic overlayer, rather than by Rashba spin-orbit coupling at the Bi/Ag interface. Comparative studies across epitaxial, polycrystalline, and intentionally surface-oxidized Bi films, beyond oxygen doses known to destroy Bi(001) surface states, reveal that structural disorder has a negative impact on the SOT efficiency and indicate a dominant bulk contribution to spin-current generation in Bi/Ag heterostructures, yielding an effective Bi spin Hall angle of approximately 1. By establishing a direct correlation between atomic-scale integrity and charge-to-spin conversion, this study provides design principles to improve the reliability of Bi-based SOT devices and offers a robust framework for interpreting spin-charge interconversion in Bi and Bi/Ag systems.

cond-mat.mtrl-sci

Tracing the film structure of an organic semiconductor with photoemission orbital tomography

Photoemission orbital tomography (POT) is a powerful tool for investigating the orbitals and electronic band structure of oriented layers of organic molecules. In many cases, POT allows conclusions to be drawn regarding the geometric structure, but so far it has been mainly applied to (sub)monolayers and rarely to bilayers, raising the question of whether POT can also provide structure information for thicker films. Here, we use POT to analyze the band dispersion in up to eight layers of $α$-sexithiophene (6T) adsorbed on Cu(110)-p($2\times1$)O. This linear oligomer turns out to be a textbook example that exemplifies the concepts of intra- and intermolecular band dispersion in molecules. Moreover, the rich band and orbital structure information available from POT for this system enables us to trace subtle changes in the crystal structure as a function of layer thickness. Specifically, we find that the periodicity of an intermolecular band changes with film thickness, revealing an increase of the intralayer distance between the molecules with the number of layers. At the same time, the momentum distribution of photoemission from the highest occupied molecular orbital of 6T discloses a decrease of the molecular tilt angle. Following the evolution of tilt angle and lattice constant with layer thickness, we observe -- purely based on electronic structure data -- that the surface-templated monolayer structure relaxes into the structure of bulk 6T crystals. The experimental findings agree well with the results of density functional theory calculations.

cond-mat.mtrl-sci

Unveiling the stacking-dependent electronic properties of 2D ultrathin rare-earth metalloxenes family LnX$_2$ (Ln = Eu, Gd, Dy; X = Ge, Si)

The studies of electronic effects in reduced dimensionality have become a frontier in nanoscience due to exotic and highly tunable character of quantum phenomena. Recently, a new class of 2D ultrathin Ln$X_2$ metalloxenes composed of a triangular lattice of lanthanide ions (Ln) coupled with 2D-Xenes of silicene or germanene ($X_2$) was introduced and studied with a particular focus on magnetic and transport properties. However, the electronic properties of metalloxenes and their effective functionalization remain mainly unexplored. Here, using a number of experimental and theoretical techniques, we trace the evolution of electronic properties and magnetic ground state of metalloxenes triggered by external perturbations. We demonstrate that the band structure of Ln$X_2$ films can be uniquely modified by controlling the Xenes stacking, thickness, varying the rare-earth and host elements, and applying an external electric field. Our findings suggest new pathways to manipulate the electronic properties of 2D rare-earth magnets that can be adjusted for spintronics applications.

cond-mat.mtrl-sci

Unidirectional Nano-Modulated Binding and Electron Scattering in Epitaxial Borophene

A complex interplay between the crystal structure and electron behavior within borophene renders this material an intriguing 2D system with many of its electronic properties still undiscovered. Experimental insight into those properties is additionally hampered by the limited capabilities of the established synthesis methods, which in turn inhibits the realization of potential borophene applications. In this multi-method study, photoemission spectroscopies and scanning probe techniques complemented by theoretical calculations have been used to investigate the electronic characteristics of a high-coverage, single-layer borophene on Ir(111) substrate. Our results show that the binding of borophene to Ir(111) exhibits pronounced one-dimensional modulation and transforms borophene into a nano-grating. The scattering of photoelectrons from this structural grating gives rise to the replication of electronic bands. In addition, the binding modulation is reflected in the chemical reactivity of borophene and gives rise to its inhomogeneous aging effect. Such aging is easily reset by dissolving boron atoms in iridium at high temperature followed by their reassembly into a fresh atomically-thin borophene mesh. Besides proving electron-grating capabilities of the boron monolayer, our data provides a comprehensive insight into the electronic properties of epitaxial borophene which is vital for further examination of other boron systems of reduced dimensionality.

cond-mat.mes-hall

Interplay between magnetic order and electronic band structure in ultrathin GdGe$_2$ metalloxene films

Dimensionality can strongly influence the magnetic structure of solid systems. Here, we predict theoretically and confirm experimentally that the antiferromagnetic (AFM) ground state of bulk gadolinium germanide metalloxene, which has a quasi-layered defective GdGe$_2$ structure, is preserved in the ultrathin film limit. \textit{Ab initio} calculations demonstrate that ultrathin GdGe$_2$ films present in-plane intra-layer ferromagnetic coupling and AFM inter-layer coupling in the ground state. Angle-resolved photoemission spectroscopy finds the AFM-induced band splitting expected for the 2 and 3 GdGe$_2$ trilayer (TL) films, which disappear above the Néel temperature. The comparative analysis of isostructural ultrathin DyGe$_2$ and GdSi$_2$ films confirms the magnetic origin of the observed band splitting. These findings are in contrast with the recent report of ferromagnetism in ultrathin metalloxene films, which we ascribe to the presence of uncompensated magnetic moments.

cond-mat.mtrl-sci

Soft-magnetic skyrmions induced by surface-state coupling in an intrinsic ferromagnetic topological insulator sandwich structure

A magnetic skyrmion induced on a ferromagnetic topological insulator (TI) is a real-space manifestation of the chiral spin texture in the momentum space, and can be a carrier for information processing by manipulating it in tailored structures. Here, we fabricate a sandwich structure containing two layers of a self-assembled ferromagnetic septuple-layer TI, Mn(Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{4}$ (MnBST), separated by quintuple layers of TI, (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ (BST), and observe skyrmions through the topological Hall effect in an intrinsic magnetic topological insulator for the first time. The thickness of BST spacer layer is crucial in controlling the coupling between the gapped topological surface states in the two MnBST layers to stabilize the skyrmion formation. The homogeneous, highly-ordered arrangement of the Mn atoms in the septuple-layer MnBST leads to a strong exchange interaction therein, which makes the skyrmions "soft magnetic". This would open an avenue towards a topologically robust rewritable magnetic memory.

cond-mat.mes-hall