arXiv subjects

Andrii Iurov

Publications and source records attributed to Andrii Iurov.

At least 19 recordsLinked to original sources

arXiv2026

Suppressed plasmon excitations, enhanced damping and static screening in Kek-Y strained $α-\mathcal{T}_3$ model

We performed a rigorous theoretical and numerical investigation into the polarization function, plasmon excitations, and plasmon damping in the Kek-$α$ model, a two-dimensional material combining the key features of the $α-\mathcal{T}_3$ lattice and Kekule-distorted graphene. Unlike conventional Kek-Y graphene, the Kekule modulation in the Kek-$α$ model affects only one of the two sublattices, giving rise to a fundamentally new model with unusual electronic properties. The low-energy spectrum consists of two degenerate flat bands and two inequivalent Dirac cones with different Fermi velocities, referred to as the fast and slow cones. The particle-hole continuum responsible for Landau damping exhibits two distinct branches associated with transitions involving these Dirac cones. An additional particle-hole mode originates from electron transitions associated with the fast Dirac cone, appearing above the main diagonal. As the parameter $α$ increases, the contribution from the fast Dirac cone becomes dominant. The additional transitions involving the flat bands and the fast Dirac cone substantially reduce the region where undamped plasmons can exist, similarly to the conventional $α-\mathcal{T}_3$. Consequently, stable plasmons are observed only for relatively small values of $α$ or at very small wave vectors. These unusual electronic and collective properties make the Kek-$α$ model a promising platform for future plasmonic and nanoscale electronic applications.

cond-mat.mes-hall↗

arXiv2026

Exploring non-trivial band structure and spin polarizations in $d$-wave altermagnets tailored by anisotropic optical fields

The subject of the present paper is a detailed theoretical investigation of the energy spectrum and bandgaps, as well as topological and collective properties and linear response, in $d$-wave altermagnets in the presence of an off-resonance optical dressing field. We consider the altermagnets with both $d_{x^2-y^2}$ and $d_{xy}$ pairing symmetries and focus on anisotropic dressing fields applied to an anisotropic and non-linear electron Hamiltonian. We have uncovered several crucial properties of the resulting electron-dressed states; specifically, we found that a finite bandgap is opened by linearly polarized irradiation, a phenomenon not observed in Dirac materials. Some of the crucial properties of the electron dressed states in the presence of the linearly polarized light can be uncovered only in the second-order perturbation expansion, which is often omitted. We found that introducing an anisotropic driving field leads to several subtle yet important changes in the Edelstein susceptibilities of altermagents, enabling the fine-tuning of their spin polarizations. We calculate the Berry curvature for various types of altermagnets and obtain closed-form analytical expressions for circularly polarized irradiation. We demonstrate that the optical driving field can generate finite Berry curvature in the absence of altermagnetic order. All these results are expected to become a crucial contribution to the rapidly developing fields of spintronics and device physics.

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arXiv2026

Surface Response, Plasma Modes of coated Multi-Layered anisotropic Semi-Dirac Heterostructures

We derived closed-form analytical expressions for the surface response functions (SRFs) for heterostructure. We investigate structures consisting of up to three layered, coated heterostructure of two-dimensional (2D) materials with a dielectric medium or vacuum interface. The dielectric media serves to inhibit charge transfer between layers for the case when a pair of 2D layers serve as coatings for a dielectric film. Our results revise the established picture for the dispersion equation for two layers of reduced dimensionality surrounded by dielectric media. An impinging electromagnetic field incident on the surface leads to Coulomb coupled plasma excitations in the structure which are yielded by the SRF. This is achieved by employing Maxwell's equations and linear response theory. We use these results to investigate the plasmonic properties of tilted semi-Dirac materials both analytically and numerically. Closed-form analytical expressions are derived for the plasmon dispersions in the long wavelength limit for single and double layers. We numerically obtain density plots of the loss functions and observe anisotropic behavior in different momentum directions. For the cases when there are two or three layers, we observe two plasmon branches corresponding to in-phase and out-of-phase charge density oscillations, where the in-phase optical modes have higher intensity than the out-of-phase acoustic modes. We calculated the optical absorption spectra for plasma modes in layered semi-Dirac materials produced by an external electromagnetic field carrying an electric polarization and frequency. Possible applications include durable protection coatings providing UV resistance, chemical protection and improving upon traditional ceramic coatings.

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arXiv2026

Exploring stable long-lifetime plasmon excitations in the Lieb lattice

The subject of the present paper is a thorough numerical investigation of plasmon expectations, their dispersions and damping within a Lieb lattice. The Lieb lattice is known for its unique low-energy band structure which consists of a bandgap as well as a flat band intersecting the conduction band at its lowest point. In contrast to previously studied dice lattice, the location of the current flat band exhibits reduced and broken symmetries, which give rise to interesting electronic and optical properties of this new material. In this work, we have investigated the conditions for observing a well-defined and stable plasmon mode within a wide frequency range. Specifically, we have considered a free-standing layer with various doping levels, as well as different types of monolayers of the Lieb lattice interacting with a surface-plasmon mode localized on top of a semi-infinite conductor. In particular, we have observed and described fully long-living plasmon modes with unusual energy dispersions. Additionally, we have carried out a detailed investigation on the static screening associated with the Lieb lattice. Our study has further revealed that these predicted features seem to be quite different from those of pseudospin-1 materials but resemble those of graphene instead.

cond-mat.mtrl-sci↗

arXiv2024

Influence of Dynamical Floquet Spectrum on the Plasmon Excitations and Exchange Energy of tilted monolayer 1T$^\prime$MoS$_2$

It is now well established that a high-frequency electromagnetic dressing field within the off-resonance regime significantly modifies the electronic transport and optical properties on Dirac materials. Here, using light with circular polarization, we investigate its effect on the energy spectrum of tilted monolayer 1T$^\prime$MoS$_2$ which acquires two energy gaps associated with up- and down- pseudospin. We can adjust its electronic properties over a wider range by varying these two band gaps in contrast with graphene. With the use of the Lindhard approach for the frequency-dependent polarizability propagator, we have developed a rigorous theoretical formalism for employing the Floquet energy spectrum for investigating the many-body effects on the plasmon excitations, their lifetimes due to Landau damping and the exchange energy of tilted monolayer 1T$^\prime$MoS$_2$ under normal incidence of electromagnetic radiation at arbitrary temperature. The dressed states at very low temperature corresponding to circular polarization suppress the response of the system to the external probe. This gives rise to the weak but long lived plasmon excitations at small wavenumber $q$ when compared to the plasmon spectrum in this regime in the absence of irradiation. However, $\sqrt{qT}$-dependent plasmons are restored at high temperatures. Our calculations have shown that the tilting, anisotropy, direct and indirect band gaps lead to a reduced exchange energy, which has some potential applications such as, tunability of exciton polariton and plasmon excitations.

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arXiv2024

Polarizability and plasmons in pseudospin-1 gapped materials with a flat band

The collective electronic properties of various types of pseudospin-$1$ Dirac-cone materials with a flat band and finite bangaps in their energy spectra are the subject of our reported investigation. Specifically, we have calculated the dynamical polarization, plasmon dispersions as well as their decay rates due to Landau damping. Additionally, we present closed-form analytical expressions for the wave function overlaps for both the gapped dice lattice and the Lieb lattice. The gapped dice lattice is a special case of the more general $α$-${\cal T}_3$ model since its band structure is symmetric and the flat band remains dispersionless. On the other hand, the Lieb lattice has a flat band which appears at the lowest point of its conduction band. Our results for these two cases exhibit unique features in the plasmon spectra and their damping regions, which have never been reported in previous studies. For example, the particle-hole modes of a Lieb lattice appear as finite-size regions, while the plasmon modes exist only in a region with small wave numbers but an extended range of frequencies.

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arXiv2023

Dynamical polarization function, plasmons, their damping and collective effects in semi-Dirac bands

We have calculated the dynamical polarization, plasmons and damping rates in semi-Dirac bands (SDB's) with zero band gap and half-linear, half-parabolic low-energy spectrum. The obtained plasmon dispersions are strongly anisotropic and demonstrate some crucial features of both two-dimensional electron gas and graphene. Such gapless energy dispersions lead to a localized area of undamped and low-damped plasmons in a limited range of the frequencies and wave vectors. The calculated plasmon branches demonstrate an increase of their energies for a finite tilting of the band structure and a fixed Fermi level which could be used as a signature of a specific tilted spectrum in a semi-Dirac band.

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arXiv2022

Dynamical optical conductivity for gapped $α-\mathcal{T}_3$ materials with a curved "flat" band

We have calculated the dynamical optical conductivity for $α-\mathcal{T}_3$ materials in the presence of a finite bandgap in their energy bandstructure. This is a special type of energy dispersions because for all $α-\mathcal{T}_3$ materials with a bandgap, except graphene and a dice lattice limits, the flat band receives a non-zero dispersion and assumes a curved shape. The infinite ${\bf k}$-degeneracy of the flat energy band is also lifted. Such a low-energy bandstructure could be obtained if an $α-\mathcal{T}_3$ material is irradiated off-resonant with circularly polarized light. We have calculated the optical conductivity for the zero and finite temperatures, as well as for the cases of a finite and nearly-zero doping. We have demonstrated that analytical expressions could be in principle obtained for all types of gapped $α-\mathcal{T}_3$ materials and provided the closed-form analytical expressions for a gapped dice lattice. Our numerical results reveal some well-known signatures of the optical conductivity in $α-\mathcal{T}_3$ and silicene with two non-equivalent bandgaps, as well as demonstrate some very specific features which have not been previously found in any existing Dirac materials.

cond-mat.mtrl-sci↗

arXiv2022

Floquet engineering of titled and gapped Dirac materials

We have established a rigorous theoretical formalism for Floquet engineering, or investigating and eventually tailoring most crucial electronic properties of tetragonal molybdenum disulfide (1T$^\prime$-MoS$_2$), by applying an external high-frequency dressing field in the off-resonant regime. It was recently demonstrated that monolayer semiconducting1T$^\prime$-MoS$_2$ may assume a distorted tetragonal structure which exhibits tunable and gapped spin- and valley-polarized tilted Dirac bandstructure. From the viewpoint of electronics, 1T$^\prime$-MoS$_2$ is one of the most technologically promising nanomaterials and a novel representative of an already famous family of transition metal dichalcogenides. The obtained dressed states strongly depend on the polarization of the applied irradiation and reflect the full complexity of the initial low-energy Hamiltonian of non-irradiated material. We have calculated and analyzed the obtained electron dressed states for linear and circular types of the polarization of the applied field focusing on their symmetrical properties, anisotropy, tilting and bandgaps, as well as topological signatures. Since a circularly polarized dressing field is also known to induce a transition into a new state with broken time-reversal symmetry and a non-zero Chern number, the combination of these topologically non-trivial phases and transitions between them could reveal some truly unique and earlier unknown phenomena.

cond-mat.mtrl-sci↗

arXiv2022

Developing a semiclassical Wentzel-Kramers-Brillouin theory for $α-\mathcal{T}_3$ model

We have developed a complete semiclassical Wentzel-Kramers-Brillouin (WKB) theory for $α-\mathcal{T}_3$ model which describes a wide class of existing pseudospin-1 Dirac cone materials. By expanding the sought wave functions in a series over the powers of Planck constant $\hbar$, we have obtained the leading order expansion term which is the key quantity required for calculating the electronic and transport properties of a semiclassical electron in $α-\mathcal{T}_3$. We have derived the transport equations connecting each two consecutive orders of the wave function expansion and solved them to obtained the first order WKB wavefunction. We have also discussed the applicability of the obtained approximation and how these results could be used to investigate various tunneling and transport properties of $α-\mathcal{T}_3$ materials with non-trivial potential profiles. Our results could be also helpful for constructing electronics devices and transistors based on innovative flat-band Dirac materials.

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arXiv2022

Plasmon damping rates in Coulomb-coupled two-dimensional layers in a heterostructure

The Coulomb excitations of charge density oscillation are calculated for a double-layer heterostructure. Specifically, we consider two-dimensional (2D) layers of silicene and graphene on a substrate. From the obtained surface response function, we calculated the plasmon dispersion relations which demonstrate the way in which the Coulomb coupling renormalizes the plasmon frequencies. Additionally, we present a novel result for the damping rates of the plasmons in this Coulomb coupled heterostructure and compare these results as the separation between layers is varied.

cond-mat.mes-hall↗

arXiv2022

Rashba spin-orbit coupling and quantum-interference effect for a pair of spin-correlated electrons in their tunneling and reflection under a step potential

We present both theory and numerical-computation results for the transmission and reflection probability currents of a charged particle across a potential step in the presence of a Rashba spin-orbit interaction. By varying kinetic energy and angle of incident electrons or barrier height, different features associated with tunneling and reflection of electrons are revealed by inter-spin-channel electron tunnelings and reflections. These unique properties are further accompanied by spin-state quantum interference of either a reflected or transmitted pairs of spin-correlated electrons with the same kinetic energy but in different spin-orbital states. Such distinctive features are expected to give rise to a lot of applications in both spintronics and quantum-computation devices.

cond-mat.mes-hall↗

arXiv2022

Finite-temperature plasmons, damping and collective behavior for $α-\mathcal{T}_3$ model

We have conducted a thorough theoretical and numerical investigation of the electronic susceptibility, polarizability, plasmons, their damping rates, as well as the static screening in pseudospin-1 Dirac cone materials with a flat band, or for a general $α- \mathcal{T}_3$ model, at finite temperatures. This includes calculating the polarization function, plasmon dispersions and their damping rates at arbitrary temperatures and obtaining analytical approximations the long wavelength limit, low and high temperatures. We demonstrate that the integral transformation of the polarization function cannot be used directly for a dice lattice revealing some fundamental properties and important applicability limits of the flat band dispersions model. At $k_B T \ll E_F$, the largest temperature-induced change of the polarization function and plasmons comes from the mismatch between the chemical potential and the Fermi energy. We have also obtained a series of closed-form semi-analytical expressions for the static limit of the polarization function of an arbitrary $α- \mathcal{T}_3$ material at any temperature with exact analytical formulas for the high, low and zero temperature limits which is of tremendous importance for all types of transport and screening calculations for the flat band Dirac materials.

cond-mat.mtrl-sci↗

arXiv2021

Tunneling conductivity fast modulated by optically-dressed electrons in graphene and a dice lattice

Based on the transmission coefficient of tunneling electrons, we have presented tunneling current and conductivity across a square-potential barrier for both graphene and $α$-$\mathcal{T}_3$ lattices under a linearly-polarized off-resonant dressing field. The presence of such a dressing field introduces an anisotropy factor in the energy dispersion of tunneling electrons so that the cross section of a Dirac-cone appears as elliptical. Consequently, the field-polarization controlled major axis of the ellipse will be misaligned with the normal direction of a barrier layer in the tunneling system, which exhibits an asymmetric Klein-paradox for an off-normal-direction tunneling. The resulting tunneling current in this system is calculated by using a transmission coefficient and a longitudinal group velocity (different from a longitudinal momentum) of electrons. By presenting numerically calculated tunneling conductivity modified by a laser dressing field, we demonstrate a significant enhancement of electrical conductivity by external laser-field intensity, which is expected to be crucial in application of ultrafast optical modulation of opto-electronic devices for photo-detection and fiber-optic communication.

cond-mat.mes-hall↗

arXiv2021

Adjustable propagating plasmons in $α-\mathcal{T}_3$ lattice-based armchair nanoribbons

We have obtained and analyzed the electronic states, polarization function and the plasmon excitations for $α- \mathcal{T}_3$-based nanoribbons with armchair termination. The calculated plasmon dispersions strongly depend on the number of the atomic rows across the ribbon, and the presence of the energy gap between the valence and conduction bands which is also determined by the nanoribbon geometry. The bandgap was proven to have the strongest effect on both the plasmon dispersions and their Landau damping. We have also demonstrated that for a small electron doping the plasmon dispersions do not depend on the relative hopping parameter $α$ of the considered $α- \mathcal{T}_3$ material in the long-wave limit and investigated the conditions when $α$ becomes an important factor which strongly affects the plasmons. We believe that our new uncovered electronic and collective properties of nano-size $α- \mathcal{T}_3$ribbons will find their applications in the field of modern electronics and nanodevices.

cond-mat.mes-hall↗

arXiv2021

Coherent-scatterer enhancement and Klein-tunneling suppression by potential barriers in gapped graphene with chirality-time-reversal symmetry

We have utilized the finite-difference approach to explore electron-tunneling properties in gapped graphene through various electrostatic-potential barriers changing from Gaussian to a triangular envelope function in comparison with a square potential barrier. Transmission coefficient is calculated numerically for each case and applied to corresponding tunneling conductance. It is well known that Klein tunneling in graphene will be greatly reduced in a gapped graphene. Our results further demonstrate that such a decrease of transmission can be significantly enhanced for spatially-modulated potential barriers. Moreover, we investigate the effect from a bias field applied to those barrier profiles, from which we show that it enables the control of electron flow under normal incidence. Meanwhile, the suppression of Klein tunneling is found more severe for a non-square barrier and exhibits a strong dependence on bias-field polarity for all kinds of barriers. Finally, roles of a point impurity on electron transmission and conductance are analyzed with a sharp peak appearing in electron conductance as the impurity atom is placed at the middle of a square barrier. For narrow triangular and Gaussian barriers, however, the conductance peaks become significantly broadened, associated with an enhancement in tunneling conductance.

cond-mat.mes-hall↗

arXiv2021

Defect capturing and charging dynamics and their effects on magneto-transport of electrons in quantum wells

The defect corrections to polarization and dielectric functions of Bloch electrons in quantum wells are first calculated. Following this, we derive the first two moment equations from Boltzmann transport theory and apply them to explore defect effects on magneto-transport of Bloch electrons. Meanwhile, we obtain analytically the momentum-relaxation time and mobility tensor for Bloch electrons making use of the screened defect-corrected polarization function. Based on quantum-statistical theory, we further investigate the defect capture and charging dynamics by employing a parameterized physics model for defects to obtain defect wave functions. After this, both capture and relaxation rates, as well as density for captured Bloch electrons, are calculated self-consistently as functions of temperature, doping density and different defect types. By applying the energy-balance equation, the number of occupied energy levels and chemical potential of defects are determined, with which the transition rate for defect capturing is obtained. By using these results, defect energy-relaxation, capture and escape rates, and Bloch-electron chemical potential are obtained self-consistently. At the same time, the Bloch-electron energy- and momentum-relaxation rates, as well as the current suppression factor, are also investigated quantitatively. Finally, by combining all these studies together, the temperature dependence of the Hall and longitudinal mobilities is demonstrated for Bloch electrons in either single- or multi-quantum wells, which can be utilized for quantifying burst noise in transistors and blinking noise in photo-detectors.

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arXiv2021

Generalized WKB theory for electron tunneling in gapped $α-\mathcal{T}_3$ lattices

We generalize Wentzel-Kramers-Brillouin (WKB) semi-classical equations for pseudospin-1 $α-\mathcal{T}_3$ materials with arbitrary hopping parameter $0 < α< 1$, which includes the dice lattice and graphene as two limiting cases. In conjunction with a series-expansion method in powers of Planck constant $\hbar$, we acquired and solved a system of recurrent differential equations for semi-classical electron wave functions in $α-\mathcal{T}_3$. Making use of these obtained wave functions, we analyzed the physics-related mechanism and quantified the transmission of pseudospin-1 Dirac electrons across non-rectangular potential barriers in $α-\mathcal{T}_3$ materials with both zero and finite band gaps. Our studies reveal several unique features, including the way in which the electron transmission depends on the energy gap, the slope of the potential barrier profile and the transverse momentum of incoming electrons. Specifically, we have found a strong dependence of the obtained transmission amplitude on the geometry-phase $ϕ= \tan^{-1} α$ of $α-\mathcal{T}_3$ lattices. We believe our current findings can be applied to Dirac cone-based tunneling transistors in ultrafast analog RF devices, as well as to tunneling-current control by a potential barrier through a one-dimensional array of scatters.

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