arXiv subjects

Andrzej Ptok

Publications and source records attributed to Andrzej Ptok.

At least 19 recordsLinked to original sources

arXiv2026

Observation of thermal Hall effect in diamond

Numerous insulators, including non-magnetic ones, have been unexpectedly found to display a finite thermal Hall signal, which has stimulated debate about its origin. Here, we report on a study of the thermal Hall effect in two diamond single crystals. The transverse thermal conductivity (kappa_xy) was found to peak at a temperature close to that at which the longitudinal thermal conductivity (kappa_xx) reaches its maximum. The measured kappa_xy, with an amplitude of 340 W/(m K) at B = 10 T, is the largest ever observed, while the kappa_xy/kappa_xx ratio follows the phenomenological trend identified in other insulators. Our observation implies the existence of an intrinsic thermal Hall effect in a generic phonon gas. We argue that the rough amplitude of both the thermal Hall angle and the thermal Hall resistivity can be accounted for by simple arguments invoking fundamental constants and quantum-mechanical constraints on solid state cohesion.

cond-mat.mtrl-sci↗

arXiv2026

Contrasting anisotropic electron-phonon-spin coupling in Fe$_{3}$GeTe$_{2}$ and Fe$_{5}$GeTe$_{2}$: A helicity-resolved Raman study

Two-dimensional van der Waals ferromagnets Fe$_3$GeTe$ _2$ (F3GT) and Fe$_5$GeTe$_2$ (F5GT) exhibit pronounced magneto-optical responses, which open promising platforms for investigating the interplay among lattice, electronic, and magnetic degrees of freedom. Here, we present a comparative study of optical resonance-induced anisotropic electron-phonon coupling and its association with magnetic ordering in these systems using wavelength- and temperature-dependent helicity-resolved Raman spectroscopy. By resolving the doubly degenerate E modes under left- and right-circularly polarized excitations, we demonstrate that the temperature evolution of the chiral mode splitting ($Δf$) does not track the magnetization behavior, indicating that the helicity-dependent Raman response arises not solely from time-reversal symmetry breaking due to magnetic order, but also from spin-orbit-coupled electronic interactions. Notably, in F3GT, the out-of-plane magnetization indirectly governs the in-plane anisotropic electron-phonon coupling under optical resonance, whereas F5GT exhibits static anisotropic interactions. The Fano asymmetry parameter $1/q$ reveals mode- and temperature-dependent coupling strengths between phonons and the electronic continuum, with pronounced angular anisotropy in F3GT but isotropic behavior in F5GT--- a consequence of its multiple Fe sites and enhanced interlayer hybridization in the latter. Our results demonstrate the role of crystal structure and magnetic anisotropy in shaping the anisotropically coupled electron-phonon-spin dynamics in these layered metallic ferromagnets, and highlight Fe$_x$GeTe$_2$ as a versatile platform for microscopic insight into chiral light-matter interactions in layered metallic ferromagnets.

cond-mat.str-el↗

arXiv2026

Kagome edge states under lattice termination, spin-orbit coupling, and magnetic order

We study the edge state properties of a two-dimensional kagome lattice using a tight-binding approach, focusing on the role of lattice termination, spin-orbit coupling, and magnetic order. In the pristine limit, we show that the existence of localized edge states is highly sensitive to boundary geometry, with certain terminations completely suppressing edge modes. Kane-Mele spin-orbit coupling opens a bulk gap and stabilizes topologically protected helical edge states, yielding a robust $\mathbb{Z}_2$ insulating phase that is insensitive to termination details. In contrast, the combined effect of a Zeeman field and Rashba spin-orbit coupling drives the system into Chern insulating phases, with Chern numbers consistent with the number of chiral edge modes. We further demonstrate that non-coplanar magnetic textures generate multiple Chern phases through finite scalar spin chirality, with Kane-Mele coupling strongly tuning the topological gaps. Our results provide important insights into the tunability of edge states in the kagome lattice, which can be key to designing materials with novel electronic properties and topological phases.

cond-mat.mtrl-sci↗

arXiv2026

Observation of the Optical Phonons in α-MnTe films

The altermagnetic materials have emerged as model systems for studying spin split electronic structures, yet controlled epitaxial growth on technologically relevant substrates remains challenging. Among the known candidates, MnTe stands out as a prominent altermagnetic material owing to its layered structure and high Neel temperature. Here, we report the molecular beam epitaxy (MBE) growth of high quality alpha MnTe thin films on GaAs(111)B substrates and provide a comprehensive analysis of the growth evolution and structural properties. Raman spectroscopy reveals multiple vibrational features of alpha MnTe including modes near 121, and 140 1/cm. Combined with first principles phonon calculations, these features are identified as the Raman-active phonons of the hexagonal NiAs type lattice. Our results show that the high crystalline quality of MBE grown alpha MnTe enables the complete experimental resolution of all symmetry allowed Raman active phonon modes, highlighting epitaxial alpha MnTe as a robust thin film platform for investigating altermagnetism and its lattice coupled excitations.

cond-mat.mes-hall↗

arXiv2026

Anisotropic electron-phonon coupling and chiral phonons in van der Waals room temperature ferromagnet Fe$_{5}$GeTe$_{2}$

The layered van der Waals Fe$_5$GeTe$_2$ (F5GT) compound exhibits room-temperature ferromagnetism, making it a promising candidate for technological applications. In our study, combined temperature, wavelength, and polarization-dependent Raman measurements, along with {\it ab initio} calculations reveal important aspects of lattice dynamics and electron-phonon interactions. The angle-resolved Raman intensity under linear polarization configurations exhibits a strong tilt in the laboratory coordinate system, indicating the existence of anisotropic electron-phonon coupling. The temperature evolution of this anisotropy is discussed by extracting the phase factor of the Raman tensor elements from the angle-resolved intensity measured at different temperatures, also uncovering a spin-orbit coupling-mediated electron-phonon response in F5GT. The thermal evolution of electron-phonon coupling is also examined by measuring the temperature dependence of the Fano parameter of the asymmetric peak in the Raman spectra, while wavelength-dependent measurements establish the role of optical resonance in enhancing the anisotropic interaction. Finally, the threefold rotational symmetry guarantees the existence of chiral phonons. We present direct spectroscopic evidence for these chiral vibrational modes through cross-circularly polarized Raman measurements, complemented by theoretical calculations of phonon circular polarization. Together, these results identify F5GT as an ideal platform for investigating emergent couplings among lattice, electronic, and magnetic degrees of freedom and for advancing the understanding of chiral phonons in magnetic van der Waals materials.

cond-mat.mtrl-sci↗

arXiv2026

Theoretical investigation of the photovoltaic properties of MgSnN$_{2}$ for multi-junction solar cells

The orthorhombic crystal structure of the MgSnN$_2$ compound with Pna2$_1$ symmetry has been investigated as a low-cost, non-toxic material for photovoltaic (PV) applications using density functional theory (DFT) and spectroscopic limited maximum efficiency (SLME) calculations. A detailed analysis of the electronic and optical properties was performed using the mBJ semilocal exchange functional. The bandgap of MgSnN$_2$ is found to be 2.45 eV. SLME photovoltaic analysis suggests that a thin film of MgSnN$_2$ with a thickness of 2 $μ$m can reach an efficiency of 13.17% at room temperature. This efficiency was further improved through the simulation of a multi-junction device, where the tandem configuration increased the efficiency from 12.80% (single-junction) to 22.42%. Furthermore, introducing cation disorder can further reduce the bandgap, enhancing its suitability for solar cell applications.

cond-mat.mtrl-sci↗

arXiv2026

Chiral phononic and electronic edge modes of EuPtSi

Systems with P2$_{1}$3 symmetry are characterized by the realization of chiral edge modes, propagating in one direction along closed loops around some high symmetry points of the Brillouin zone. We study the phononic and electronic properties of EuPtSi, which crystallizes with P2$_{1}$3 symmetry. EuPtSi is also characterized by intriguing magnetic properties, such as the realization of the skyrmion lattice. Here, using ab initio techniques, we study bulk and slab properties of EuPtSi. The bulk phononic and electronic band structures exhibit a spin-1 Weyl point and a charge-2 Dirac point at the $Γ$ and R points, respectively. Consequently, the surface states exhibit chiral edge modes. Such features are present in both the phononic and electronic surface spectra. The chiral phononic edge mode is associated with the vibration of the atoms in close vicinity, while the chiral electronic surface states correspond to carrier accumulation at the edge of chiral atomic chains.

cond-mat.mtrl-sci↗

arXiv2026

Transverse and Longitudinal Magnetothermopower Promoted by Ambipolar Effect in Half-Heusler Topological Materials

Topologically trivial and non-trivial semimetals with a high degree of carrier compensation are well known for demonstrating large transverse magnetothermopower ($S_{yx}$). However, in such systems, the longitudinal magnetothermopower ($S_{xx}$) is typically suppressed due to nearly perfect electron-hole compensation. Here, we show that the half-Heusler topological semimetal DyPtBi exhibits simultaneously large $S_{xx}$ and $S_{yx}$ magnetothermopowers, defying this conventional trade-off. In $B=14$\,T, thermopower of DyPtBi reaches peak values of $S_{xx}=131\,μ\rm{V/K}$ at $T=149$\,K and $S_{yx}=-297\,μ\rm{V/K}$ at $T=200$\,K, and transverse component remains significantly large even at $290$\,K ($S_{yx}=-213\,μ\rm{V/K}$). Remarkably, at $T=290$\,K and in relatively weak magnetic field of $1$\,T, both relevant for practical applications, DyPtBi shows $S_{yx}=-18\,μ\rm{V/K}$, which is one of the largest values reported under such conditions. The large transverse thermopower originates from an ambipolar effect associated with thermal excitation occurring in zero-gap semiconductors. Due to the imperfect electron-hole compensation, an intrinsic asymmetry between hole- and electron-type carriers enables pronounced values of both $S_{xx}$ and $S_{yx}$, resulting in high effective thermopower ($S_{xx}+|S_{yx}|=379\,μ\rm{V/K}$) in DyPtBi at 200\,K. A comparative analysis with DyPdBi, another half-Heusler material that demonstrates large $S_{xx}=123\,μ\rm{V/K}$ but small $S_{yx}=-16\,μ\rm{V/K}$ (both values obtained at $T=293$\,K and $B=14$\,T), highlights the critical role of band structure and compensation tuning. These findings underscore the potential of chemical doping and band engineering in rare-earth-based half-Heusler materials for optimizing both transverse and longitudinal thermoelectric properties.

cond-mat.mtrl-sci↗

arXiv2026

Tuning of anomalous magnetotransport properties in half-Heusler topological semimetal GdPtBi

Half-Heusler compounds from the $RE$PtBi family exemplify Weyl semimetals in which external magnetic field induce Weyl nodes. These materials exceptionally host topologically non-trivial states near the Fermi level and their manifestation can be clearly seen in the magnetotransport properties. In this study, we tune the Fermi level of the archetypal half-Heusler Weyl semimetal GdPtBi through high-energy electron irradiation, moving it away from the Weyl nodes to investigate the resilience of the contribution of topologically non-trivial states to magnetotransport properties. Remarkably, we observe that the negative longitudinal magnetoresistance, which is a definitive indicator of the chiral magnetic anomaly occurring in topological semimetals, persists even when the Fermi level is shifted by 100\,meV from its original position in the pristine sample. Additionally, the anomalous Hall effect shows complex variations as the Fermi level is altered, attributed to the energy-dependent nature of the Berry curvature, which arises from avoided band crossing. Our findings show the robust influence of Weyl nodes on the magneto-transport properties of GdPtBi, irrespective of the Fermi level position, a behaviour likely applicable to many half-Heusler Weyl semimetals.

cond-mat.mtrl-sci↗

arXiv2026

Topological properties of spin block magnetic ladders in proximity of a superconductor: application to BaFe$_{2}$S$_{3}$

Monoatomic chains with magnetic order in proximity of a s-wave superconductor can host Majorana edge modes. In this paper, we extend this idea to more complex spin-block chains such as the BaFe$_{2}$S$_{3}$ magnetic material that has a spin-ladder like structure. We investigate the topological phase diagram of such a system as function of the system parameters. We show that the coupling between chains within the ladder leads to the topological phase with a winding number larger than the sum of two single magnetic chains. Furthermore, strong coupling between chains leads to fractal-like substructure in the topological phase diagram. By investigating the real space properties of such a system and particularly its edge modes, we find that the system spectrum contains several in-gap states that we analyze in detail.

cond-mat.supr-con↗

arXiv2025

Topological character of the antiferromagnetic EuMg$_{2}$Bi$_{2}$

Antiferromagnetic EuM$_{2}$Pn$_{2}$ compounds, where M is a metal element and Pn is a pnictogen element, have been recognized as candidates for realizing a topologically nontrivial electronic structure. In this paper, we focus on EuMg$_2$Bi$_2$, whose topological nature still remains unclear. We present a comprehensive study based on several experimental and theoretical techniques. Magnetic susceptibility, electrical resistivity, and specific heat capacity measurements confirm the existence of an antiferromagnetic ordering. The electronic band structure was investigated by high-resolution angle-resolved photoemission spectroscopy (ARPES), supported by ab initio calculations. ARPES measurement reveals that the electronic structure of this system is dominated by linearly dispersive hole-like bands near the Fermi level. Theoretical analyses of the electronic band structure indicates that EuMg$_2$Bi$_2$ is a strong topological insulator, which should be reflected in the presence of a metallic surface state. We also theoretically examine the magnetic-field-induced anomalous Hall conductivity, confirming previously reported observations.

cond-mat.mtrl-sci↗

arXiv2025

Electronic and magnetic properties of the NdNiO$_2$/SrTiO$_3$ thin films

The hole-doped NdNiO$_2$ layer deposited on the SrTiO$_{3}$ surface exhibits unconventional superconductivity. Here, we present a systematic study of the electronic and magnetic properties of the NdNiO$_2$ superconductor using the density functional theory (DFT). The strong local Coulomb interactions in the Ni($3d)$ and Nd($4f$) states are included within the DFT+$U$ method. The effect of Sr doping on the electronic band structure and density of states was studied for the NdNiO$_2$ thin films deposited on the SrTiO$_3$ (001) surface. The results obtained for the uncapped thin films were compared with the calculations for the NdNiO$_2$ films capped by the SrTiO$_3$ layer. We have found significant changes in the electronic structure and magnetic properties of the thin films compared to the bulk crystal.

cond-mat.mtrl-sci↗

arXiv2025

Nature of field-induced transitions and hysteretic magnetoresistance in non-collinear antiferromagnet EuIn2As2

We examine the magnetic and electrical transport properties of the hexagonal EuIn2As2 compound, combining experimental and theoretical results. This compound is predicted to be an axion-insulator from an electronic point of view and an altermagnet while in the collinear magnetic phase. However, experiments indicate that the Fermi level lies within the valence band rather than in the topological gap, potentially leading to the dominance of magnetic properties. Our detailed studies on magnetization and electrical transport support the presence of a broken-helix antiferromagnetic state, which was previously identified by X-ray and neutron diffraction experiments. Notably, we observed within that state a field-induced metamagnetic transition marked by a large hysteresis in magnetoresistance, which turns into a sharp upturn for the magnetic field tilted by 15 degree from the c-axis of the crystal. Combined with theoretical calculations, it is explained that the application of a magnetic field changes the low-resistivity antiferromagnetic domain walls to the high-resistivity domain walls due to the reduction in the Fermi surface sheets interaction area in the domain walls, originating from p-orbitals of As. EuIn2As2, therefore, presents a new case study that broadens the understanding of complex magnetic structures and their influence on electrical transport.

cond-mat.mtrl-sci↗

arXiv2025

Electronic Structure of a Nodal Line Semimetal Candidate TbSbTe

The LnSbTe (Ln = Lanthanides) family, like isostructural ZrSiS type compounds, has emerged as a fertile playground for exploring the interaction of electronic correlations and magnetic ordering with the nodal line band topology. Here, we report a detailed electronic band structure investigation of TbSbTe, corroborated by electrical transport, thermodynamic, and magnetic studies. Temperature-dependent magnetic susceptibility and thermodynamic transport studies indicate the onset of antiferromagnetic ordering below TN = 5.1 K. The electronic band structure study, carried out with high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements aided with density functional theory based first-principles calculations reveals presence of nodal lines in the GammaX high symmetry direction, forming a diamond-shaped nodal plane around Gamma high symmetry point. A strongly photon energy dependent nodal feature located at the X point of the surface Brillouin zone, indicating an extended nodal line along X R direction, is also observed. This study elucidates the intricate interplay among symmetry-protected band characteristics, the influence of spin orbit coupling, magnetism, and topological properties.

cond-mat.mes-hall↗

arXiv2025

Electronic band structure of a nodal line semimetal candidate ErSbTe

The LnSbTe family is well known for hosting a plethora of intriguing characteristics stemming from its crystalline symmetry, magnetic structure, 4f electronic correlations and spin orbit coupling (SOC) phenomena. In this paper, we have systematically studied the bulk electrical and thermodynamic properties and electronic structure of the nodal line semimetal candidate ErSbTe using angle resolved photoemission spectroscopy (ARPES) corroborated with first principles based theoretical band structure calculations with and without considering the effect of SOC, a critical factor dictating the band degeneracy which depends on the choice of the Ln atom. Corroborative temperature dependent susceptibility, electrical resistivity and thermodynamic measurements, coherently exhibit paramagnetic to antiferromagnetic phase transition approximately at 1.94 K, and another sharp anomaly at 1.75 K. The zero field cooled resistivity measurement does not show the characteristic hump like feature in the other LnSbTe materials. The electronic band structure of ErSbTe, exhibits a diamond shaped Fermi surface. Along the high symmetry direction GX, electronic bands are projected to cross over the Fermi energy, necessitated by the nonsymmorphic symmetry of the system. The other crossing along this direction is gapped, which evolves along the momentum space reaching its maximum along the GM direction.

cond-mat.mes-hall↗

arXiv2025

Observation of momentum dependent charge density wave gap in EuTe4

The occurrence of charge density wave (CDW) phenomena, particularly in low dimensional rare-earth chalcogenides, has attracted substantial research interest. Among these materials, EuTe4, which features multiple Te layers and a single Eu-Te layer, serves as a promising platform to study the interplay between CDW order and 4f electron configurations, including magnetism. In this study, First principles based density functional theory (DFT) calculations were carried out to investigate the electronic band structure modifications arising from CDW modulation. Angle resolved photoemission spectroscopy (ARPES) revealed the emergence of a CDW gap at the Fermi level, as well as hybridization induced gap features at lower binding energies. The low lying CDW gap reaches its maximum along the Gamma-Y high-symmetry direction and a minimum along GX reflecting the anisotropic nature of the electronic structure. We also performed low temperature heat capacity measurements in applied magnetic fields near the Neel temperature (TN ~ 6.9 K) to construct the magnetic phase diagram of EuTe4. This study provides valuable insight into the directional dependent evolution of the Fermi surface nesting induced CDW ordering, along with other observed gap openings within this system.

cond-mat.mes-hall↗

arXiv2025

Phonon Weyl points and chiral edge modes with unconventional Fermi arcs in NbSi$_{2}$

NbSi$_{2}$ crystallizes in the P6$_{2}$22 symmetry, featuring chiral chains of Si atoms. The absence of inversion symmetry, combined with its chiral structure, gives arise to unique physical properties. The breaking of inversion symmetry leads to the emergence of Weyl points, while the chiral structure enables the formation of chiral edge modes. As a result, NbSi$_{2}$ serves as an ideal platform for exploring the interplay between phonon Weyl points and chiral phonon edge modes. For example, we identify the presence of a structure consisting of three Weyl points with a Chern number of $\mathcal{C} = +1$ around the $\bar{\text{K}}$ point. These nodes form unconventional Fermi arcs connecting the $\barΓ$ or $\bar{\text{K}}$ points, which mimic an effective Chern number of $\mathcal{C} = -2$.

cond-mat.mtrl-sci↗

arXiv2025

Revealing the intrinsic electronic structure and complex fermiology of YRu2Si2 using angle-resolved photoemission spectroscopy

We performed a detailed study of the intrinsic electronic structure of YRu2Si2 employing angleresolved photoemission spectroscopy (ARPES) and density-functional theory (DFT) based firstprinciples calculations. Electrical and magnetic measurements were conducted on well-oriented highquality single crystals. Bulk physical measurements indicate that the compound exhibits slightly enhanced Pauli paramagnetic behavior, accompanied by electrical transport properties reminiscent of metals. Our ARPES data reveal four fold symmetric Fermi surface with weakly-dispersing bands around the N point originating from Ru d orbitals. We observed the anisotropic characteristics of the band near the N point, showing weak dispersion in the XNX direction and minimal dispersion along the NGN direction. The electronic band structure near the Fermi level is primarily governed by the Ru d orbital, with minor contributions from the Y d and Si p orbitals. Polarization-dependent ARPES results indicate the multi-band and multi-orbital band-character of YRu2Si2. Due to the negligible correlation effect, the observed ARPES data is found to be in good agreement with the DFT results.

cond-mat.mes-hall↗