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Angelo Cotta Ramusino

Publications and source records attributed to Angelo Cotta Ramusino.

3 recordsLinked to original sources

Development and characterization of hybrid MCP-PMT with embedded Timepix4 ASIC used as pixelated anode

We present a novel single-photon detector based on a vacuum tube incorporating a photocathode, a microchannel plate (MCP), and a Timepix4 CMOS ASIC functioning as a pixelated anode. Designed to handle photon rates up to 1 billion per second across a 7 cm$^2$ active area, the detector achieves outstanding spatial and temporal resolutions of 5-10 $μ$m and below 50 ps r.m.s., respectively. The Timepix4 ASIC comprises approximately 230,000 pixels, each integrating analog and digital front-end electronics. This enables data-driven acquisition and supports data transmission rates up to 160 Gb/s. External FPGA-based electronics manage both configuration and readout. In order to test the timing performance of the Timepix4 ASIC we performed preliminary characterization of an assembly bonded to a 100 $μ$m thick n-on-p silicon sensor using a pulsed infrared laser, which demonstrated a per-pixel timing resolution of 110 ps, with cluster-based averaging methods improving to below 50 ps. Six prototype detectors incorporating different MCP stack configurations and end-spoiling depths were produced by Hamamatsu Photonics. We report on their characterization, including dark count rates, gain, and spatial and timing resolutions, assessed both in laboratory conditions and during a test-beam campaign at CERN's SPS facility.

physics.ins-det↗

Timing resolution performance of Timepix4 bump-bonded assemblies

The timing performance of the Timepix4 application-specific integrated circuit (ASIC) bump-bonded to a $100\;μ\textrm{m}$ thick n-on-p silicon sensor is presented. A picosecond pulsed infrared laser was used to generate electron-hole pairs in the silicon bulk in a repeatable fashion, controlling the amount, position and time of the stimulated charge signal. The timing resolution for a single pixel has been measured to $107\;\textrm{ps}$ r.m.s. for laser-stimulated signals in the silicon sensor bulk. Considering multi-pixel clusters, the measured timing resolution reached $33\;\textrm{ps}$ r.m.s. exploiting oversampling of the timing information over several pixels.

physics.ins-det↗

Investigation of the burst phenomenon in SiPMs at liquid nitrogen temperature

Burst effect of Silicon Photomultiplier (SiPM) at cryogenic temperatures have been discovered few years ago looking at the dark count rate of SiPMs at liquid nitrogen temperatures. Bursts are trains of single signals that happen randomly and are clearly distinguishable from the primary DCR and correlated noise because of their particular time distribution. In this article we describe a detailed study related to both the external causes that triggers bursts and to the phenomenon, internal to the sensor, that produces this dark signals. We related the burst occurrence to the luminescence produced by some trapping centers in the SiPMs when they are excited by ionizing radiation that impinges on the sensor.

hep-ex↗