arXiv subjects

Angelo Di Bernardo

Publications and source records attributed to Angelo Di Bernardo.

At least 19 recordsLinked to original sources

arXiv2026

Nodal superconductivity with spin-triplet component in a noncentrosymmetric weakly-correlated metal

Although Cooper pairs in superconductors generally condense into a spin-singlet state, spin-triplet superconductivity has attracted sustained interest for dissipationless spin transport and topological quantum technologies. Noncentrosymmetric superconductors provide a promising route to triplet pairing because antisymmetric spin-orbit coupling (ASOC) can mix spin-singlet and spin-triplet states. To date, the strongest evidence for such mixed-parity superconductivity has been reported in heavy-fermion systems, where strong electronic correlations obscure the role of ASOC. Whether ASOC alone can support a substantial spin-triplet component therefore remains unresolved. Here we show that the weakly-correlated noncentrosymmetric superconductor Nb$_{18}$Re$_{82}$ (Nb-Re) hosts a mixed-parity superconducting state with a substantial spin-triplet contribution. Low-temperature scanning tunnelling spectroscopy on single crystals with different crystallographic orientations reveals distinct superconducting spectra. A symmetry-constrained analysis shows that the spectroscopic dataset is explained by an order parameter combining a nodal spin-singlet component with a spin-triplet contribution reaching up to half of the singlet amplitude. These findings resolve the debated pairing symmetry of Nb-Re and demonstrate that ASOC alone can foster triplet pairing. More broadly, they establish orientation-resolved tunnelling spectroscopy as a route to identifying mixed-parity superconducting states and suggest that triplet superconductivity may be more widespread among noncentrosymmetric materials than previously recognized.

cond-mat.supr-con↗

arXiv2026

Superconducting non-volatile memory based on charge trapping and gate-controlled supercurrent

Superconducting electronics holds great promise for energy-efficient high-performance and quantum computing, yet no superconducting memory has matched the performance of conventional semiconductor memories $-$ a long-standing bottleneck. Here we demonstrate a voltage-controlled, non-volatile superconducting memory that exploits two previously independent effects: gate-controlled supercurrent (GCS), the gate-voltage-induced suppression of the critical current $I_c$ in a superconducting constriction, and charge trapping in an Al$_2$O$_3$ dielectric. Trapped charges shift the threshold gate voltage required for $I_c$ suppression, defining two stable, well-separated $I_c$ states that can be used to store binary information. We demonstrate reliable non-destructive readout and reversible write/erase cycling over nearly fifty consecutive cycles with the device remaining in the zero-resistance state throughout. Stored information survives thermal cycling well above the superconducting transition temperature $T_c$, confirming true non-volatility $-$ a capability absent in all existing superconducting memories. We further discuss integration into a NAND architecture and show significant power-dissipation advantages over CMOS charge-trap flash memories.

cond-mat.supr-con↗

arXiv2026

From Film to Flakes: Electronic Properties and Magnetization Variations in Yttrium Iron Garnet

Yttrium iron garnet (YIG) is a ferrimagnetic insulator valued for its high Curie temperature, very low magnetic damping, and ability to support long-range spin-wave transport. These qualities have established it as a cornerstone material in the field of spintronics and magnonics. Most studies on YIG so far have been focused on bulk crystals, thin films, and nanoparticles, including variants with substitutions at the yttrium or iron site. New morphologies such as sub-micron flakes have drawn interest recently as their geometry and mechanical flexibility might enable different device architectures. However, detailed investigations combining their electronic structure and magnetic behavior remain scarce. In this work, we present a comparative study of the electronic and magnetic properties of a bulk-like YIG film and a sub-micron-sized YIG flake. Our results highlight the distinct behavior that emerges in sub-micron dimensions and point toward future uses for flake-based YIG in compact spintronics devices.

cond-mat.mtrl-sci↗

arXiv2026

Competing magnetic states in a non-coplanar Kagome magnet

Non-collinear Kagome antiferromagnets (AFMs) Mn3X (X = Sn, Ga, Ge, Ir, Pt) can generate an anomalous Hall effect (AHE) despite vanishing net magnetization, enabled by broken time-reversal and inversion symmetries. However, strong in-plane anisotropy has limited studies of the AFM-AHE and electronic applications to coplanar spin configurations. Non-coplanar spin textures in these systems have been realized only in low temperature spin-glass states or at interfaces with heavy metals. Here, we report an intrinsic non-coplanar spin configuration persisting up to 400 K in cubic-phase Mn3Ge, originating from coexisting symmetric and antisymmetric exchange interactions. Competing magnetic states associated with this non-coplanar spin configuration give rise to an unconventional AHE with a magnetic-field-induced sign reversal and a hump-like feature. Our findings establish a platform for non-coplanar magnetism in AFM spintronics.

cond-mat.mtrl-sci↗

arXiv2026

Surface-Localized Magnetic Order in RuO2 Thin Films Revealed by Low-Energy Muon Probes

Ruthenium dioxide (RuO2) has recently emerged as a candidate altermagnet, yet its intrinsic magnetic ground state, particularly in thin films, remains debated. This study aims to clarify the nature and spatial extent of the magnetic order in RuO2 thin films grown under different conditions. Thin films of RuO2 with thicknesses of 30 nm and 33 nm are fabricated by pulsed laser deposition and sputtering onto TiO2(110) and Al2O3(1-102) substrates, respectively. Low-energy muon spin rotation/relaxation (LE-muSR) with depth-resolved sensitivity measurements is performed in transverse magnetic fields (TF) from 4 K to 290 K. The muSR data collected with a muon implantation energy of 1 keV reveal that magnetic signals originate from the near-surface region of the film (<10 nm), and the affected volume fraction is at most about 8.5%. The localized magnetic response is consistent across different substrates, growth techniques, and parameter sets, suggesting a common origin related to surface defects and dimensionality effects. The combined use of TF-muSR and the study of depth-dependent implantation with low-energy muons provides direct evidence for surface-confined, inhomogeneous static magnetic order in RuO2 thin films, helping reconcile discrepancies. These findings underscore the importance of considering reduced-dimensional contributions and motivate further investigation into the role of defects, strain, and stoichiometry on the magnetic properties of RuO2, especially at the surface.

cond-mat.mes-hall↗

arXiv2026

Van der Waals superconducting electronics: materials, devices and circuit integration

Van der Waals (vdW) superconductors - atomically thin crystalline materials that can be stacked into more complex heterostructures - have opened a promising avenue for superconducting electronics thanks to their properties that are otherwise difficult to obtain in other superconducting materials. These include strong resilience to high in-plane fields, electrostatic tuneability, and non-reciprocal transport rooted in inversion-symmetry breaking and strong spin-orbit coupling. In addition to highlighting the importance of these properties for superconducting electronics, this review gives an overview over the physical mechanisms that govern and influence superconductivity in vdW materials including Ising pairing, band inversion, and proximity effects at superconductor/ferromagnet interfaces that do not have an equivalent in thin-film systems. This overview then sets the basis to survey the wide range of functionalities enabled by superconducting vdW devices including gate-controlled devices, superconducting diodes, and circuit elements for readout and control of quantum bits. The review concludes with a forward look at wafer-scale growth and deterministic assembly of vdW devices, highlighting concrete pathways that can enable the transition from vdW device prototypes to deployable components for cryogenic electronics and quantum technologies.

cond-mat.supr-con↗

arXiv2025

Signatures of edge states in antiferromagnetic van der Waals Josephson junctions

The combination of superconductivity and magnetic textures represents a promising approach to explore unconventional superconducting phenomena, including new correlated and topological phases. Van der Waals (vdW) materials have emerged in this context as a versatile platform to explore the interplay between these two competing orders. Here, we report on individual NbSe2/NiPS3/NbSe2 vdW Josephson junctions behaving as superconducting quantum interference devices (SQUIDs), which we attribute to the interplay between the superconductivity of NbSe2 and the spin texture of the vdW antiferromagnetic insulator NiPS3. The SQUID behavior, which persists for in-plane magnetic fields of at least 6 T, is the result of interference between localized transport channels that form in two separate regions of the sample. Microscopic modeling of the antiferromagnet insulator/superconductor (AFI/S) interface reveals the formation of localized states at the edges of the junction that can lead to localized channels that dominate the transport. Our findings highlight the potential of vdW superconducting heterostructures with AFs as platforms for engineering and probing novel superconducting phenomena, and they establish a new route for lithographic-free SQUIDs that operate in high magnetic fields.

cond-mat.supr-con↗

arXiv2025

Implantation studies of low-energy positive muons in niobium thin films

Here we study the range of keV positive muons $μ^+$ implanted in Nb$_2$O$_5$($x$ nm)/Nb($y$ nm)/SiO$_2$(300 nm)/Si [$x$ = 3.6 nm, 3.3 nm; $y$ = 42.0 nm, 60.1 nm] thin films using low-energy muon spin spectroscopy (LE-$μ$SR). At implantation energies 1.3 keV $\leq E \leq$ 23.3 keV, we compare the measured diamagnetic $μ^+$ signal fraction $f_{\mathrm{dia.}}$ against predictions derived from implantation profile simulations using the TRIM.SP Monte Carlo code. Treating the implanted $μ^+$ as light protons, we find that simulations making use of updated stopping cross section data are in good agreement with the LE-$μ$SR measurements, in contrast to parameterizations found in earlier tabulations. Implications for other studies relying on accurate $μ^+$ stopping information are discussed.

cond-mat.mtrl-sci↗

arXiv2025

Dirac surface states, multiorbital dimerization and superconductivity in Nb- and Ta-based A15 compounds

Using first-principle calculations, we investigate the electronic, topological and superconducting properties of Nb$_3$X (X = Ge, Sn, Sb) and Ta$_3$Y (Y = As, Sb, Bi) A15 compounds. We demonstrate that these compounds host Dirac surface states which are related to a nontrivial Z$_2$ topological value. The spin-orbit coupling (SOC) splits the eightfold degenerate R point close to the Fermi level enhancing the amplitude of the spin Hall conductance. Indeed, despite the moderate spin-orbit of the Nb-compounds, a large spin Hall effect is also obtained in Nb$_3$Ge and Nb$_3$Sn compounds. We show that the Coulomb interaction opens the gap at the R point thus making more evident the occurrence of Dirac surface states. We then investigate the superconducting properties by determining the strength of the electron-phonon BCS coupling. The evolution of the critical temperature is tracked down to the 2D limit indicating a reduction of the transition temperature which mainly arises from the suppression of the density of states at the Fermi level. Finally, we propose a minimal tight-binding model based on three coupled Su-Schrieffer-Heeger chains with t$_{2g}$ Ta- and Nb-orbitals reproducing the spin-orbit splittings at the R point among the $π$-bond bands in this class of compounds. We separate the kinetic parameters in $π$ and $δ$-bonds, in intradimer and interdimer hoppings and discuss their relevance for the topological electronic structure. We point out that Nb$_3$Ge might represent a Z$_2$ topological metal with the highest superconducting temperature ever recorded.

cond-mat.supr-con↗

arXiv2024

Gate control of superconducting current: Mechanisms, parameters and technological potential

In conventional metal-oxide semiconductor (CMOS) electronics, the logic state of a device is set by a gate voltage (VG). The superconducting equivalent of such effect had remained unknown until it was recently shown that a VG can tune the superconducting current (supercurrent) flowing through a nanoconstriction in a superconductor. This gate-controlled supercurrent (GCS) effect can lead to superconducting logics like CMOS logics, but with lower energy dissipation. The physical mechanism underlying the GCS effect, however, remains under debate. In this review article, we illustrate the main mechanisms proposed for the GCS effect, and the material and device parameters that mostly affect it based on the evidence reported. We will come to the conclusion that different mechanisms are at play in the different studies reported so far. We then outline studies that can help answer open questions on the effect and achieve control over it, which is key for applications. We finally give insights into the impact that the GCS effect can have towards high-performance computing with low-energy dissipation and quantum technologies.

cond-mat.supr-con↗

arXiv2024

Tutorial: From Topology to Hall Effects -- Implications of Berry Phase Physics

The Berry phase is a fundamental concept in quantum mechanics with profound implications for understanding topological properties of quantum systems. This tutorial provides a comprehensive introduction to the Berry phase, beginning with the essential mathematical framework required to grasp its significance. We explore the intrinsic link between the emergence of a non-trivial Berry phase and the presence of topological characteristics in quantum systems, showing the connection between the Berry phase and the band structure as well as the phase's gauge-invariant nature during cyclic evolutions. The tutorial delves into various topological effects arising from the Berry phase, such as the quantum, anomalous, and spin Hall effects, which exemplify how these quantum phases manifest in observable phenomena. We then extend our discussion to cover the transport properties of topological insulators, elucidating their unique behaviour rooted in Berry phase physics. This tutorial aims at equipping its readers with a robust understanding of the basic theory around the Berry phase and its pivotal role in the realm of topological quantum phenomena.

cond-mat.mes-hall↗

arXiv2024

High-performance gate-controlled superconducting switches: large output voltage and reproducibility

Logic circuits consist of devices that can be controlled between two distinct states. The recent demonstration that a superconducting current flowing in a constriction can be controlled via a gate voltage ($V_G$) - can lead to superconducting logic with better performance than existing logics. However, before such logic is developed, high reproducibility in the functioning of GCS devices and optimization of their performance must be achieved. Here, we report an investigation of gated Nb devices showing GCS with unprecedently-high reproducibility. Based on the investigation of a statistically-significant number of devices, we demonstrate that the GCS is independent of the constriction width, in contrast with previous reports, and confirm a strong correlation between the GCS and the leakage current ($I_{leak}$) induced by $V_G$. We also achieve a voltage output in our devices larger than the typical values reported to date by at least one order of magnitude, which is relevant for the future interconnection of devices, and show that $I_{leak}$ can be used as a tool to modulate the operational $V_G$ of devices on a $SiO_2$ substrates. These results altogether represent an important step forward towards the optimization of reproducibility and performance of GCS devices, and the future development of a GCS-based logic.

cond-mat.supr-con↗

arXiv2024

Single-crystalline YIG flakes with uniaxial in-plane anisotropy and diverse crystallographic orientations

We study Y3Fe5O12 (YIG) flakes that we produce via mechanical cleaving and exfoliation of YIG single crystals. By characterizing their structural and magnetic properties, we find that these YIG nanoflakes have surfaces oriented along unusual crystallographic axes and uniaxial in-plane magnetic anisotropy due to their shape, both of which are not commonly available in YIG thin films. These physical properties, combined with the possibility of picking up the YIG flakes and stacking them onto flakes of other van der Waals materials or pre-patterned electrodes or waveguides, open unexplored possibilities for magnonics and for the realization of novel YIG-based heterostructures and devices.

cond-mat.mtrl-sci↗

arXiv2024

Signature of long-ranged spin triplets across a two-dimensional superconductor/helimagnet van der Waals interface

The combination of a superconductor with a magnetically inhomogeneous material has been established as an efficient mechanism for the generation of long-ranged spin-polarized (spin-triplet) Cooper pairs. Evidence for this mechanism, however, has been established based on studies done on three-dimensional systems, where the strong bonds existing at the interface between the superconductor and the magnetic material should in principle enhance proximity effects and strengthen any electronic correlations. Here, we fabricate devices based on van der Waals stacks of flakes of the two-dimensional superconductor $NbS_2$ combined with flakes of $Cr_{1/3}NbS_2$, which has a built-in magnetic inhomogeneity due to its helimagnetic spin texture at low temperatures. We find that the critical temperature of these vdW bilayers is strongly dependent on the magnetic state of $Cr_{1/3}NbS_2$, whose degree of magnetic inhomogeneity can be controlled via an applied magnetic field. Our results demonstrate evidence for the generation of long-ranged spin-triplet pairs across the $Cr_{1/3}NbS_2$/$NbS_2$ vdW interface.

cond-mat.supr-con↗

arXiv2024

Unveiling unconventional magnetism at the surface of Sr$_2$RuO$_4$

Materials with strongly correlated electrons exhibit physical properties that are often difficult to predict as they result from the interactions of large numbers of electrons combined with several quantum degrees of freedom. The layered oxide perovskite Sr$_2$RuO$_4$ is a strongly correlated electron material that has been intensively investigated since its discovery due to its unusual physical properties. Whilst recent experiments have reopened the debate on the exact symmetry of the superconducting state in Sr$_2$RuO$_4$, a deeper understanding of the Sr$_2$RuO$_4$ normal state appears crucial as this is the background in which electron pairing occurs. Here, by using low-energy muon spin spectroscopy we discover the existence of magnetism at the surface of Sr$_2$RuO$_4$ in its normal state. We detect static weak dipolar fields yet manifesting below a relatively high onset temperature larger than 50 K, which reveals the unconventional nature of the observed magnetism. We relate the origin of this phase breaking time reversal symmetry to electronic ordering in the form of orbital loop currents that originate at the reconstructed Sr$_2$RuO$_4$ surface. Our observations set a reference for the discovery of the same magnetic phase in other materials and unveil an electronic ordering mechanism that can influence unconventional electron pairing with broken time reversal symmetry in those materials where the observed magnetic phase coexists with superconductivity.

cond-mat.str-el↗

arXiv2024

Critical temperature of triplet superconductor-ferromagnet bilayers as a probe for pairing symmetry

Identifying superconducting materials with spin-polarized Cooper pairs is an important objective both for exploration of new fundamental physics and for cryogenic applications in spintronics and quantum sensing. We here compute the critical temperature $T_c$ of the superconducting transition in a bilayer comprised of a superconductor with an intrinsic spin-triplet order parameter and a ferromagnet. We determine how $T_c$ varies both with the thickness of the ferromagnet and its magnetization direction. We show that both the orbital and spin part of the triplet superconducting order parameter leave clear signatures in $T_c$ which do not appear in a bilayer of a conventional s-wave superconductor and a ferromagnet. In particular, the dependence of $T_c$ on these variables changes depending on whether or not the superconducting order parameter features Andreev bound-states and also changes qualitatively when the magnetization is rotated in the plane of the ferromagnetic film. Measurements of $T_c$ in such bilayers are therefore useful to identify the pairing symmetry of intrinsic triplet superconductors.

cond-mat.supr-con↗

arXiv2023

Gate-controlled supercurrent effect in dry-etched Dayem bridges of non-centrosymmetric niobium rhenium

The application of a gate voltage to control the superconducting current flowing through a nanoscale superconducting constriction, named as gate-controlled supercurrent (GCS), has raised great interest for fundamental and technological reasons. To gain a deeper understanding of this effect and develop superconducting technologies based on it, the material and physical parameters crucial for GCS must be identified. Top-down fabrication protocols should be also optimized to increase device scalability, although studies suggest that top-down fabricated devices are more resilient to show GCS. Here, we investigate gated superconducting nanobridges made with a top-down fabrication process from thin films of the non-centrosymmetric superconductor NbRe. Unlike other devices previously reported, our NbRe devices systematically exhibit GCS, when made in specific conditions, which paves the way for higher device scalability. Our results also suggest that surface properties of NbRe nanobridges and their modification during fabrication are key for GCS.

cond-mat.supr-con↗

arXiv2023

Effects of fabrication routes and material parameters on the control of superconducting currents by gate voltage

The control of a superconducting current via the application of a gate voltage has been recently demonstrated in a variety of superconducting devices. Although the mechanism underlying this gate-controlled supercurrent (GCS) effect remains under debate, the GCS effect has raised great interest for the development of the superconducting equivalent of conventional metaloxide semiconductor electronics. To date, however, the GCS effect has been mostly observed in superconducting devices made by additive patterning. Here, we show that devices made by subtractive patterning show a systematic absence of the GCS effect. Doing a microstructural analysis of these devices and comparing them to devices made by additive patterning, where we observe a GCS, we identify some material and physical parameters that are crucial for the observation of a GCS. We also show that some of the mechanisms proposed to explain the origin of the GCS effect are not universally relevant.

cond-mat.supr-con↗