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Anil Bilgin

Publications and source records attributed to Anil Bilgin.

3 recordsLinked to original sources

Distilling Knowledge from Search: Decoder Model Factory for Quantum LDPC Codes

We introduce GraphMP, a learning-based message-passing decoder for quantum low-density parity-check codes that transfers without fine-tuning across code families, code sizes, physical error rates, and noise models. GraphMP uses local message passing to keep computation scalable as the decoding graph grows. Guided by its predictions, beam search progressively refines candidate error patterns, trading additional decoding time for lower logical error rates. We develop the decoder model factory as a paradigm for training successive models on experience generated by earlier models during decoding. Model-guided search supplies verified trajectories for knowledge distillation, folding computation spent on decoding into reusable training data. Repeated collection and distillation improve the decoder across generations and adapt its strategy as the noise changes. These results motivate a coupled quantum--classical architecture with two interacting cycles: rapid decoding protects quantum information, while slower learning renews the models from operating experience. The long-term vision is a scalable decoder model factory that produces high-performance, low-latency decoders and continually adapts them to evolving quantum hardware.

quant-ph↗

Donor-Acceptor Pairs near Silicon Carbide surfaces

Donor-acceptor pairs (DAPs) in wide-bandgap semiconductors are promising platforms for the realization of quantum technologies, due to their optically controllable, long-range dipolar interactions. Specifically, Al-N DAPs in bulk silicon carbide (SiC) have been predicted to enable coherent coupling over distances exceeding 10 nm. However, their practical implementations require an understanding of the properties of these pairs near surfaces and interfaces. Here, using first principles calculations we investigate how the presence of surfaces influence the stability and optical properties of Al-N DAPs in SiC, and we show that they retain favorable optical properties comparable to their bulk counterparts, despite a slight increase in electron-phonon coupling. Furthermore, we introduce the concept of surface-defect pairs (SDPs), where an electron-hole pair is generated between a near-surface defect and an occupied surface state located in the bandgap of the material. We show that vanadium-based SDPs near OH-terminated 4H-SiC surfaces exhibit dipoles naturally aligned perpendicular to the surface, greatly enhancing dipole-dipole coupling between SDPs. Our results also reveal significant polarization-dependent modulation in the stimulated emission and photoionization cross sections of V-based SDPs, which are tunable by two orders of magnitude via the polarization angle of the incident laser light. The near-surface defects investigated here provide novel possibilities for the development of hybrid quantum-classical interfaces, as they can be used to mediate information transfer between quantum nodes and integrated photonic circuits.

physics.comp-ph↗

Donor-Acceptor Pairs in Wide-Bandgap Semiconductors for Quantum Technology Applications

We propose a quantum science platform utilizing the dipole-dipole coupling between donor-acceptor pairs (DAPs) in wide bandgap semiconductors to realize optically controllable, long-range interactions between defects in the solid state. We carry out calculations based on density functional theory (DFT) to investigate the electronic structure and interactions of DAPs formed by various substitutional point defects in diamond and silicon carbide (SiC). We determine the most stable charge states and evaluate zero phonon lines using constrained DFT and compare our results with those of simple donor-acceptor pair (DAP) models. We show that polarization differences between ground and excited states lead to unusually large electric dipole moments for several DAPs in diamond and SiC. We predict radiative lifetimes and photoluminescence spectra for selected substitutional atoms and show that while B-N pairs in diamond are challenging to control due to their large electron-phonon coupling, DAPs in SiC, especially Al-N pairs, are suitable candidates to realize long-range optically controllable interactions.

quant-ph↗