arXiv subjects

Aniruddha Konar

Publications and source records attributed to Aniruddha Konar.

14 recordsLinked to original sources

arXiv2015

Carrier transport in layered nanolaminated films

Analyzing {\it{ab-initio}} electronic and phonon band structure, temperature-dependent carrier transport in layered Ti$_{2}$AlC is investigated. It is found that cylindrical Fermi surface is the origin of the anisotropic carrier effective mass (infinite effective mass along $c$ axis ) leading to strong anisotropic (insulator along $c$ axis and metallic along the layer) carrier transport in these films. Using electronic and phonon bandstructures, we develop an analytical model of electron-phonon interaction as well as in-plane carrier conductivity originating from strong inter-valley (s$\rightarrow$d) scattering in Ti$_{2}$AlC. We invoke density functional theory to calculate the deformation potential corresponding to acoustic phonon vibration. The calculated deformation potential is in well agreement with the extracted deformation potential value from the transport data. Extracted deformation potential will be useful for prediction of transport quantities for application of these metals at elevated temperatures.

cond-mat.mtrl-sci↗

arXiv2015

Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors

Ability to understand and model the performance limits of nanowire transistors is the key to design of next generation devices. Here, we report studies on high-mobility junction-less gate-all-around nanowire field effect transistor with carrier mobility reaching 2000 cm2/V.s at room temperature. Temperature-dependent transport measurements reveal activated transport at low temperatures due to surface donors, while at room temperature the transport shows a diffusive behavior. From the conductivity data, the extracted value of sound velocity in InAs nanowires is found to be an order less than the bulk. This low sound velocity is attributed to the extended crystal defects that ubiquitously appear in these nanowires. Analyzing the temperature-dependent mobility data, we identify the key scattering mechanisms limiting the carrier transport in these nanowires. Finally, using these scattering models, we perform drift-diffusion based transport simulations of a nanowire field-effect transistor and compare the device performances with experimental measurements. Our device modeling provides insight into performance limits of InAs nanowire transistors and can be used as a predictive methodology for nanowire-based integrated circuits.

cond-mat.mes-hall↗

arXiv2013

Raman and Photoluminescence Study of Dielectric and Thermal Effects on Atomically Thin MoS2

Atomically thin two-dimensional molybdenum disulfide (MoS2) sheets have attracted much attention due to their potential for future electronic applications. They not only present the best planar electrostatic control in a device, but also lend themselves readily for dielectric engineering. In this work, we experimentally investigated the dielectric effect on the Raman and photoluminescence (PL) spectra of monolayer MoS2 by comparing samples with and without HfO2 on top by atomic layer deposition (ALD). Based on considerations of the thermal, doping, strain and dielectric screening influences, it is found that the red shift in the Raman spectrum largely stems from modulation doping of MoS2 by the ALD HfO2, and the red shift in the PL spectrum is most likely due to strain imparted on MoS2 by HfO2. Our work also suggests that due to the intricate dependence of band structure of monolayer MoS2 on strain, one must be cautious to interpret its Raman and PL spectroscopy.

cond-mat.mtrl-sci↗

arXiv2012

Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior

We report the realization of field-effect transistors (FETs) made with chemically- synthesized layered two dimensional (2D) crystal semiconductor WS2. The 2D Schottky-barrier FETs demonstrate ambipolar behavior and a high (~105x) on/off current ratio at room temperature with current saturation. The behavior is attributed to the presence of an energy bandgap in the 2D crystal material. The FETs show clear photo response to visible light. The promising electronic and optical characteristics of the devices combined with the layered 2D crystal flexibility make WS2 attractive for future electronic and optical devices.

cond-mat.mes-hall↗

arXiv2011

Interband absorption in single layer hexagonal boron nitride

Monolayer of hexagonal boron nitride (h-BN), commonly known as "white graphene" is a promising wide bandgap semiconducting material for deep-ultaviolet optoelectronic devices. In this report, the light absorption of a single layer hexagonal boron nitride is calculated using a tight-binding Hamiltonian. The absorption is found to be monotonically decreasing function of photon energy compared to graphene where absorption coefficient is independent of photon energy and characterized by the effective fine-structure constant.

cond-mat.mes-hall↗

arXiv2011

High field transport in graphene

In this work, high field carrier transport in two dimensional (2D) graphene is investigated. Analytical models are applied to estimate the saturation currents in graphene, based on the high scattering rate of optical phonon emission. Non-equilibrium (hot) phonon effect was studied by Monte Carlo (MC) simulations. MC simulation confirms that hot phonon effects play a dominant role in current saturation in graphene. Current degradation due to elastic scattering events is much smaller compared to the hot phonon effect. Transient phenomenon as such as velocity overshoot was also studied using MC simulation. The simulation results shows promising potential for graphene to be used in high speed electronic devices by shrinking the channel length below 100nm if electrostatic control can be exercised in the absence of a band gap.

cond-mat.mtrl-sci↗

arXiv2011

Dielectric environment mediated quantum screening of one dimensional electron gas

Relaxing the assumption of "infinite and homogenous background" the dielectric response function of one-dimensional (1D) semiconducting nanowires embedded in a dielectric environment is calculated. It is shown that high-k (higher than semiconductor dielectric constant) dielectric environment reduces the screening by the free carriers inside the nanostructure whereas, low dielectric environment increases the Coulombic interaction between free carriers and enhances the strength of screening function. In long wavelength limit, dielectric screening and collective excitation of electron gas are found to be solely determined by the environment instead of the semiconductor. Behavior of static dielectric function is particularly addressed at a specific wavevector q=2k_F; a wavevector ubiquitously appears in charge transport in nanostructures

cond-mat.mes-hall↗

arXiv2010

Charged basal stacking fault (BSF) scattering in nitride semiconductors

A theory of charge transport in semiconductors in the presence of basal stacking faults is developed. It is shown that the presence of basal stacking faults leads to anisotropy in carrier transport. The theory is applied to carrier transport in non-polar GaN films consisting of a large number BSFs, and the result is compared with experimental data.

cond-mat.mes-hall↗

arXiv2010

Effect of high-K dielectrics on charge transport in graphene

The effect of various dielectrics on charge mobility in single layer graphene is investigated. By calculating the remote optical phonon scattering arising from the polar substrates, and combining it with their effect on Coulombic impurity scattering, a comprehensive picture of the effect of dielectrics on charge transport in graphene emerges. It is found that though high-$κ$ dielectrics can strongly reduce Coulombic scattering by dielectric screening, scattering from surface phonon modes arising from them wash out this advantage. By comparing the room-temperature transport properties with narrow-bandgap III-V semiconductors, strategies to improve the mobility in single layer graphene are outlined.

cond-mat.mtrl-sci↗

arXiv2010

Anisotropic charge transport in non-polar GaN QW: polarization induced charge and interface roughness scattering

Charge transport in GaN quantum well (QW) devices grown in non-polar direction has been theoretically investigated . Emergence of anisotropic line charge scattering mechanism originating as a result of anisotropic rough surface morphology in conjunction with in-plane built-in polarization has been proposed. It has shown that in-plane growth anisotropy leads to large anisotropic carrier transport at low temperatures. At high temperatures, this anisotropy in charge transport is partially washed out by strong isotropic optical phonon scattering in GaN QW.

cond-mat.mes-hall↗

arXiv2009

Tailoring the carrier mobility of semiconducting nanowires by remote dielectrics

The dielectric environment of thin semiconductor nanowires can affect the charge transport properties inside the wire. In this work, it is shown that Coulomb impurity scattering inside thin nanowires can be damped strongly by coating the wire with a high-k dielectric. This will lead to an increase in the mobility of free charges inside the wire.

cond-mat.mes-hall↗

arXiv2008

Mobility in Semiconducting Graphene Nanoribbons: Phonon, Impurity, and Edge Roughness Scattering

The transport properties of carriers in semiconducting graphene nanoribbons are studied by comparing the effects of phonon, impurity, and line-edge roughness scattering. It is found that scattering from impurities located at the surface of nanoribbons, and from acoustic phonons are as important as line edge roughness scattering. The relative importance of these scattering mechanisms varies with the temperature, Fermi level location, and the width of the ribbons. Based on the analysis, strategies for improvement of low-field mobility are described.

cond-mat.mtrl-sci↗

arXiv2007

Carrier Statistics and Quantum Capacitance of Graphene Sheets and Ribbons

In this work, fundamental results for carrier statistics in graphene 2-dimensional sheets and nanoscale ribbons are derived. Though the behavior of intrinsic carrier densities in 2d graphene sheets is found to differ drastically from traditional semiconductors, very narrow (sub-10 nm) ribbons are found to be similar to traditional narrow-gap semiconductors. The quantum capacitance, an important parameter in the electrostatic design of devices, is derived for both 2d graphene sheets and nanoribbons.

cond-mat.mtrl-sci↗

arXiv2007

Enhancement of Carrier Mobility in Semiconductor Nanostructures by Dielectric Engineering

We propose a technique for achieving large improvements in carrier mobilities in 2- and 1-dimensional semiconductor nanostructures by modifying their dielectric environments. We show that by coating the nanostructures with high-$κ$ dielectrics, scattering from Coulombic impurities can be strongly damped. Though screening is also weakened, the damping of Coulombic scattering is much larger, and the resulting improvement in mobilities of carriers can be as much as an order of magnitude for thin 2D semiconductor membranes, and more for semiconductor nanowires.

cond-mat.mtrl-sci↗