arXiv subjects

Anirudh Chandrasekaran

Publications and source records attributed to Anirudh Chandrasekaran.

8 recordsLinked to original sources

arXiv2026

Triplet superconductivity supported by an X$_9$ high-order Van Hove singularity

We study a four-fold symmetric dispersion relation of a quantum material, which exhibits a single high-order Van Hove singularity of X$_9$ type at the Fermi energy. First, we analyze in detail its form, type and density of states when the energy dispersion is in its canonical form. Subsequently, we study the possibility of a superconducting state when Hubbard repulsive interactions are taken into account. By solving the gap equation, it is shown that triplet state superconductivity with power-law dependence of the critical temperature T$_c$ on the interaction strength can be formed when a single singularity is present in the Brillouin zone. We discuss the effects of fluctuations and provide an upper bound of a possible superconducting critical temperature for the ruthenate Sr$_3$Ru$_2$O$_7$ which has been shown to exhibit this type of singularity.

cond-mat.supr-con↗

arXiv2025

Designing Topological High-Order Van Hove Singularities: Twisted Bilayer Kagomé

The interplay of high-order Van Hove singularities and topology plays a central role in determining the nature of the electronic correlations governing the phase of a system with unique signatures characterising their presence. Layered van der Waals heterostuctures are ideal systems for band engineering through the use of twisting and proximity effects. Here, we use symmetry to demonstrate how twisted Kagomé bilayers can host topological high-order Van Hove singularities. We study a commensurate system with a large twist angle and demonstrate how the initial choice of high-symmetry stacking order can greatly influence the electronic structure and topology of the system. We, furthermore, study the sublattice interference in the system. Our results illustrate the rich energy landscape of twisted Kagomé bilayers and unveil large Chern numbers (of order 10), establishing twisted bilayer Kagomé as a natural playground for probing the mixing of strong correlations and topology.

cond-mat.str-el↗

arXiv2025

On the engineering of higher-order Van Hove singularities in two dimensions

The properties of correlated electron materials are often intricately linked to Van Hove singularities (VHS) in the vicinity of the Fermi energy. The class of these VHS is of great importance, with higher-order ones -- with power-law divergence in the density of states -- leaving frequently distinct signatures in physical properties. We use a new theoretical method to detect and analyse higher-order VHS (HOVHS) in two-dimensional materials and apply it to the electronic structure of the surface layer of Sr$_2$RuO$_4$. We then constrain a low energy model of the VHS of the surface layer of Sr$_2$RuO$_4$ against angle-resolved photoemission spectroscopy and quasiparticle interference data to analyse the VHS near the Fermi level. We show how these VHS can be engineered into HOVHS.

cond-mat.str-el↗

arXiv2024

Resonant inelastic X-ray scattering in the topological semimetal FeSi

The energy spectrum of topological semimetals contains protected degeneracies in reciprocal space that correspond to Weyl, Dirac, or multifold fermionic states. To exploit the unconventional properties of these states, one has to access the electronic structure of the three-dimensional bulk. In this work, we present the first joint theory-experiment study of the electronic structure of a candidate topological semimetal with resonant inelastic X-ray scattering (RIXS). We resolve the bulk electronic states of FeSi using momentum-dependent RIXS at the Fe $L_3$ edge. We observe a broad excitation continuum devoid of sharp features, consistent with particle-hole scattering in an underlying electronic band structure. Using density functional theory (DFT), we calculate the electronic structure of FeSi and derive a band theory formulation of RIXS in the fast collision approximation to model the scattering process with zero adjustable parameters. While band theory predicts an excitation continuum with broad spectral features similar to the observed ones, discrepancies between theory and experiment suggest the presence of low-energy processes that DFT alone does not account for. This first study of RIXS in a topological semimetal shows that RIXS is a useful tool for revealing unanticipated behavior of bulk electronic states in this class of materials.

cond-mat.str-el↗

arXiv2023

Single monkey-saddle singularity of a Fermi surface and its instabilities

Fermi surfaces can undergo sharp transitions under smooth changes of parameters. Such transitions can have a topological character, as is the case when a higher-order singularity, one that requires cubic or higher-order terms to describe the electronic dispersion near the singularity, develops at the transition. When time-reversal and inversion symmetries are present, odd singularities can only appear in pairs within the Brillouin zone. In this case, the combination of the enhanced density of states that accompany these singularities and the nesting between the pairs of singularities leads to interaction driven instabilities. We present examples of single $n=3$ (monkey saddle) singularities when time-reversal and inversion symmetries are broken. We then turn to the question of what instabilities are possible when the singularities are isolated. For spinful electrons, we find that the inclusion of repulsive interactions destroys any isolated monkey-saddle singularity present in the noninteracting spectrum by developing Stoner or Lifshitz instabilities. In contrast, for spinless electrons and at the mean-field level, we show that an isolated monkey-saddle singularity can be stabilized in the presence of short-range repulsive interactions.

cond-mat.str-el↗

arXiv2023

A practical method to detect, analyse and engineer higher order Van Hove singularities in multi-band Hamiltonians

We present a practical method to detect, diagnose and engineer higher order Van Hove singularities in multiband systems, with no restrictions on the number of bands and hopping terms. The method allows us to directly compute the Taylor expansion of the dispersion of any band at arbitrary points in momentum space, using a generalised extension of the Feynman Hellmann theorem, which we state and prove. Being fairly general in scope, it also allows us to incorporate and analyse the effect of tuning parameters on the low energy dispersions, which can greatly aid the engineering of higher order Van Hove singularities. A certain class of degenerate bands can be handled within this framework. We demonstrate the use of the method, by applying it to the Haldane model.

cond-mat.str-el↗

arXiv2022

Effect of disorder on density of states and conductivity in higher order van Hove singularities in two dimensional bands

We study systems with energy bands in two dimensions, hosting higher order Van Hove singularities (HOVHS) in the presence of disorder, using standard diagrammatic techniques for impurity averaging. In the clean limit, such singularities cause power-law divergence in the density of states (DOS), and this is expected to strongly affect electronic correlation. In order to analyse the signatures of these singularities in disordered systems, we employ various Born approximations, culminating in the self-consistent (non) Born approximation. Although the divergence of the DOS is smeared, we find that the shape of the DOS, as characterized by the power law tail and the universal ratio of prefactors, is retained slightly away from the singularity. This could help us to understand current and future experiments on materials that can be tuned to host HOVHS. The impurity induced smearing is calculated and analysed for several test cases of singularities. We also study the effects of impurities on electrical conductivity and determine the regimes where the quantitative features of the power law DOS manifest in the conductivity.

cond-mat.str-el↗

arXiv2019

Catastrophe theory classification of Fermi surface topological transitions in two dimensions

We classify all possible singularities in the electronic dispersion of two-dimensional systems that occur when the Fermi surface changes topology, using catastrophe theory. For systems with up to seven control parameters (i.e., pressure, strain, bias voltage, etc), the theory guarantees that the singularity belongs to to one of seventeen standard types. We show that at each of these singularities the density of states diverges as a power law, with a universal exponent characteristic of the particular catastrophe, and we provide its universal ratio of amplitudes of the prefactors of energies above and below the singularity. We further show that crystal symmetry restricts which types of catastrophes can occur at the points of high symmetry in the Brillouin zone. For each of the seventeen wallpaper groups in two-dimensions, we list which catastrophes are possible at each high symmetry point.

cond-mat.str-el↗