arXiv subjects

Anna Isaeva

Publications and source records attributed to Anna Isaeva.

At least 19 recordsLinked to original sources

arXiv2026

Disentangling bulk and surface states in the electronic structure of PtBi$_2$(0001)

Recent reports of surface-localized topological superconductivity in trigonal PtBi$_2$ highlight the importance of understanding its surface electronic structure. We investigate the bulk and surface band structure of PtBi$_2$ using angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. Through photon-energy- and polarization-dependent measurements, we disentangle bulk dispersions from surface states on the two distinct surface terminations of PtBi$_2$(0001). For both terminations, we assign several different surface states and find good agreement between experiment and calculations. Based on our calculations, we analyze the orbital composition in the surface and bulk bands and compare the results to polarization-dependent ARPES measurements. Together, our results provide a coherent picture of the surface electronic structure of PtBi$_2$ across both surface terminations.

cond-mat.str-el↗

arXiv2026

Fermiology and spin polarization of topological surface states in PtBi$_2$

Layered PtBi$_2$ is a candidate for topological superconductivity arising in Fermi-arc surface states. Using spin- and angle-resolved photoemission spectroscopy, we demonstrate that the Fermi arcs in PtBi$_2$ are singly degenerate and spin-polarized, which establishes their nontrivial topology and constitutes a necessary condition for topological superconductivity. We further uncover a pronounced surface-termination dependence of the Fermi-arc dispersion, yielding either nearly flat or approximately linear bands in agreement with first-principles calculations. Together, the observed spin polarization and termination-dependent bandwidth of the Fermi-arc surface states identify key ingredients underlying the potential emergence of topological superconductivity in PtBi$_2$.

cond-mat.supr-con↗

arXiv2026

Engineering photomagnetism in collinear van der Waals antiferromagnets

Achieving efficient ultrafast optical control of antiferromagnetic spin dynamics is a central goal for next-generation high-speed THz spintronic and magnonic devices. Resonant optical pumping of crystal-field-split d-d orbital multiplets in magnetic TM ions directly modulates exchange and spin-orbit interactions, inducing large-amplitude coherent spin precession. However, such effects are limited to a handful of systems and there is no general strategy to enhance d-d photomagnetism in antiferromagnets. Here, we demonstrate the engineering of photomagnetism via TM-ion doping in collinear van der Waals antiferromagnets. In Mn$_{1-x}$Ni$_x$PS$_3$, small amounts of Ni$^{2+}$ activate a strong photomagnetic response while largely preserving the N\'eel ground state. Even 10% Ni boosts the response by more than an order of magnitude compared to pure MnPS$_3$, with resonant pumping of Ni$^{2+}$ d-d transitions driving large-amplitude coherent spin precession and providing helicity-dependent phase control. Tuning the pump energy across the full Mn$_{1-x}$Ni$_x$PS$_3$ composition range shows that Ni excitations remain effective across competing N\'eel and zig-zag antiferromagnetic states while supporting tunable-frequency coherent spin precession. These results establish TM-ion doping as a versatile strategy to harness orbital multiplet excitations for ultrafast, low-dissipation spin control in van der Waals antiferromagnets.

cond-mat.mtrl-sci↗

arXiv2025

Giant universal conductance fluctuations in the antiferromagnetic topological insulator MnBi2Te4

Intrinsic magnetic topological insulators can host quantum states with quantized magneto-electric responses, such as the axion and Chern insulators states evidenced in ultra-thin MnBi2Te4 films. Yet, whereas quantization is investigated thoroughly, transport properties related to the phase of charge carriers remains unexplored. Here, we study quantum coherent transport in mesoscopic Hall bars fabricated from thick exfoliated MnBi2Te4 flakes, and reveal the longest phase-coherence length ever observed in a mesoscopic magnet (about 500nm at 1K), associated to 2D topological surface states. In the fully-coherent regime, significant non-local contributions to quantum interference up to the micron scale lead to giant-amplitude universal conductance fluctuations (about 20e2/h). In the self-averaging regime, the statistical properties of conductance fluctuations confirm the 2D nature of quantum interference and different dephasing mechanisms are identified, as due to either magnetism or magnetic flux through coherent loops. Remarkably, the weak decoherence in magnetic topological insulator nanostructures show their potential to realize novel quantum spin interferometers based on dephasing by local magnetic textures at liquid-helium temperatures.

cond-mat.mes-hall↗

arXiv2025

Transport evidence of surface states in magnetic topological insulator MnBi2Te4

Magnetic topological insulators can host chiral 1D edge channels at zero magnetic field, when a magnetic gap opens at the Dirac point in the band structure of 2D topological surface states, leading to the quantum anomalous Hall effect in ultra-thin nanostructures. For thicker nanostructures, quantization is severely reduced by the co-existence of edge states with other quasi-particles, usually considered as bulk states. Yet, surface states also exist above the magnetic gap, but it remains difficult to identify electronic subbands by electrical measurements due to strong disorder. Here we unveil surface states in MnBi2Te4 nanostructures, using magneto-transport in very-high magnetic fields up to 55 T, giving evidence of Shubnikov-de-Haas oscillations above 40 T. A detailed analysis confirms the 2D nature of these quantum oscillations, thus establishing an alternative method to photoemission spectroscopy for the study of topological surface states in magnetic topological insulators, using Landau level spectroscopy.

cond-mat.mes-hall↗

arXiv2025

Intrinsic defects as a source of $\textit{n}$-type conductivity in CrSBr

Understanding and controlling native defects is essential for unlocking the full potential of two-dimensional magnetic semiconductors. Here, angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations are used to explore the electronic properties of bulk CrSBr. ARPES measurements reveal clear signatures of conduction band filling in as-grown crystals, indicative of unintentional doping. An analysis of intrinsic defects based on density functional theory (DFT) identifies chromium interstitials ($Cr_i$) stabilized between CrSBr layers as the most favorable shallow donors. Bromine-on-sulfur antisites ($Br_S$) and bromine vacancies ($V_{Br}$) are also found to act as potential donors, albeit with deeper ionization energies. Our results shed light on the origin of unintentional $\textit{n}$-type doping of CrSBr and pave the way for new strategies for defect control and electronic property tuning in this van der Waals magnet.

cond-mat.mtrl-sci↗

arXiv2024

Roadmap on Quantum Magnetic Materials

Fundamental research on two-dimensional (2D) magnetic systems based on van der Waals materials has been gaining traction rapidly since their recent discovery. With the increase of recent knowledge, it has become clear that such materials have also a strong potential for applications in devices that combine magnetism with electronics, optics, and nanomechanics. Nonetheless, many challenges still lay ahead. Several fundamental aspects of 2D magnetic materials are still unknown or poorly understood, such as their often-complicated electronic structure, optical properties, and magnetization dynamics, and their magnon spectrum. To elucidate their properties and facilitate integration in devices, advanced characterization techniques and theoretical frameworks need to be developed or adapted. Moreover, developing synthesis methods which increase critical temperatures and achieve large-scale, high-quality homogeneous thin films is crucial before these materials can be used for real-world applications. Therefore, the field of 2D magnetic materials provides many challenges and opportunities for the discovery and exploration of new phenomena, as well as the development of new applications. This Roadmap presents the background, challenges, and potential research directions for various relevant topics in the field on the fundamentals, synthesis, characterization, and applications. We hope that this work can provide a strong starting point for young researchers in the field and provide a general overview of the key challenges for more experienced researchers.

cond-mat.mtrl-sci↗

arXiv2024

Bulk and surface electron scattering in disordered Bi$_{2}$Te$_{3}$ probed by quasiparticle interference

We investigated the electronic properties of the topological insulator Bi$_{2}$Te$_{3}$ by scanning tunneling microscopy and spectroscopy at low temperature. We obtained high-resolution quasiparticle interference data of the topological surface Dirac electrons at different energies. Spin-selective joint density of states calculations were performed for surface and bulk electronic states to interpret the observed quasiparticle interference data. The topological properties of our crystals are demonstrated by the absence of backscattering along with the linear energy dispersion of the dominant scattering vector. In addition, we detect non-dispersive scattering modes which we associate with bulk-surface scattering and, thus, allow an approximate identification of the bulk energy gap range based on our quasiparticle interference data. Measurements of differential conductance maps in magnetic fields up to 15 T have been carried out, but no strong modifications could be observed.

cond-mat.mes-hall↗

arXiv2023

Hall-effect in the MnBi_2Te_4 crystal using silicon nitride nanomembrane via contacts

Utilizing an interplay between band topology and intrinsic magnetism, the two-dimensional van der Waals (vdW) system MnBi_2Te_4 provides an ideal platform for realizing exotic quantum phenomena and offers great opportunities in the emerging field of antiferromagnetic spintronic technology. Yet, the fabrication of MnBi_2Te_4-based nanodevices is hindered by the high sensitivity of this material, which quickly degrades when exposed to air or to elevated temperatures. Here, we demonstrate an alternative route of fabricating vdW-MnBi_2Te_4-based electronic devices using the cryogenic dry transfer of a printable circuit embedded in an inorganic silicon nitride membrane. The electrical connections between the thin crystal and the top surface of the membrane are established through via contacts. Our magnetotransport study reveals that this innovative via contact approach enables exploring the MnBi_2Te_4-like sensitive 2D materials and engineering synthetic heterostructures as well as complex circuits based on the two-dimensional vdW systems.

cond-mat.mtrl-sci↗

arXiv2023

Intermixing-driven surface and bulk ferromagnetism in the quantum anomalous Hall candidate MnBi$_6$Te$_{10}$

The recent realizations of the quantum anomalous Hall effect (QAHE) in MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$ benchmark the (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ family as a promising hotbed for further QAHE improvements. The family owes its potential to its ferromagnetically (FM) ordered MnBi$_2$Te$_4$ septuple layers (SL). However, the QAHE realization is complicated in MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$ due to the substantial antiferromagnetic (AFM) coupling between the SL. An FM state, advantageous for the QAHE, can be stabilized by interlacing the SL with an increasing number $n$ of Bi$_2$Te$_3$ layers. However, the mechanisms driving the FM state and the number of necessary QLs are not understood, and the surface magnetism remains obscure. Here, we demonstrate robust FM properties in MnBi$_6$Te$_{10}$ ($n = 2$) with $T_C \approx 12$ K and establish their origin in the Mn/Bi intermixing phenomenon by a combined experimental and theoretical study. Our measurements reveal a magnetically intact surface with a large magnetic moment, and with FM properties similar to the bulk. Our investigation thus consolidates the MnBi$_6$Te$_{10}$ system as perspective for the QAHE at elevated temperatures.

cond-mat.mtrl-sci↗

arXiv2022

Pressure-tuning of $\alpha$-RuCl$_3$ towards the ideal Kitaev-limit

We report the discovery of an intriguing pressure-driven phase transformation in the layered Kitaev-material $\alpha$-RuCl$_3$. By analyzing both the Bragg scattering as well as the diffuse scattering of high-quality single crystals, we reveal a collective reorganization of the layer stacking throughout the crystal. Importantly, this transformation also effects the structure of the RuCl$_3$ honeycomb layers, which acquire a high trigonal symmetry with a single Ru--Ru distance of 3.41\r{A} and a single Ru--Cl--Ru bond angle of 92.8{\deg}. Hydrostatic pressure therefore allows to tune the structure of $\alpha$-RuCl$_3$ much closer to the ideal Kitaev-limit. The high-symmetry phase can also be stabilized by biaxial stress, which can explain conflicting results reported earlier and, more importantly, makes the high-symmetry phase accessible to a variety of experiments.

cond-mat.str-el↗

arXiv2022

Nontrivial gapless electronic states at the stacking faults of weak topological insulators

Lattice defects such as stacking faults may obscure electronic topological features of real materials. In fact, defects are a source of disorder that can enhance the density of states and conductivity of the bulk of the system and they break crystal symmetries that can protect the topological states. On the other hand, in recent years it has been shown that lattice defects can act as a source of nontrivial topology. Motivated by recent experiments on three-dimensional (3D) topological systems such as Bi$_2$TeI and Bi$_{14}$Rh$_3$I$_9$, we examine the effect of stacking faults on the electronic properties of weak topological insulators (WTIs). Working with a simple model consisting of a 3D WTI formed by weakly-coupled two-dimensional (2D) topological layers separated by trivial spacers, we find that 2D stacking faults can carry their own, topologically nontrivial gapless states. Depending on the WTI properties, as well as the way in which the stacking fault is realized, the latter can form a topologically protected 2D semimetal, but also a 2D topological insulator which is embedded in the higher-dimensional WTI bulk. This suggests the possibility of using stacking faults in real materials as a source of topologically nontrivial, symmetry-protected conducting states.

cond-mat.mes-hall↗

arXiv2020

High-field thermal transport properties of the Kitaev quantum magnet alpha-RuCl3: evidence for low-energy excitations beyond the critical field

We investigate the phononic in-plane longitudinal low-temperature thermal conductivity kappa_ab of the Kitaev quantum magnet alpha-RuCl3 for large in-plane magnetic fields up to 33 T. Our data reveal for fields larger than the critical field Bc ~ 8 T, at which the magnetic order is suppressed, a dramatic increase of kappa_ab at all temperatures investigated. The analysis of our data shows that the phonons are not only strongly scattered by a magnetic mode at relatively large energy which scales roughly linearly with the magnetic field, but also by a small-energy mode which emerges near Bc with a square-root-like field dependence. While the former is in striking agreement with recent spin wave theory (SWT) results of the magnetic excitation spectrum at the Gamma point, the energy of the latter is too small to be compatible with the SWT-expected magnon gap at the M point, despite the matching field dependence. Therefore, an alternative scenario based on phonon scattering off the thermal excitation of random-singlet states is proposed.

cond-mat.str-el↗

arXiv2019

Meta-magnetism of weakly-coupled antiferromagnetic topological insulators

The magnetic properties of the van der Waals magnetic topological insulators MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$ are investigated by magneto-transport measurements. We evidence that the relative strength of the inter-layer exchange coupling J to the uniaxial anisotropy K controls a transition from an A-type antiferromagnetic order to a ferromagnetic-like metamagnetic state. A bi-layer Stoner-Wohlfarth model allows us to describe this evolution, as well as the typical angular dependence of specific signatures, such as the spin-flop transition of the uniaxial antiferromagnet and the switching field of the metamagnet.

cond-mat.mes-hall↗

arXiv2019

Topological electronic structure and intrinsic magnetization in MnBi$_4$Te$_7$: a Bi$_2$Te$_3$-derivative with a periodic Mn sublattice

Combinations of non-trivial band topology and long-range magnetic order hold promise for realizations of novel spintronic phenomena, such as the quantum anomalous Hall effect and the topological magnetoelectric effect. Following theoretical advances material candidates are emerging. Yet, a compound with a band-inverted electronic structure and an intrinsic net magnetization remains unrealized. MnBi$_2$Te$_4$ is a candidate for the first antiferromagnetic topological insulator and the progenitor of a modular (Bi$_2$Te$_3$)$_n$(MnBi$_2$Te$_4$) series. For $n$ = 1, we confirm a non-stoichiometric composition proximate to MnBi$_4$Te$_7$ and establish an antiferromagnetic state below 13 K followed by a state with net magnetization and ferromagnetic-like hysteresis below 5 K. Angle-resolved photoemission experiments and density-functional calculations reveal a topological surface state on the MnBi$_4$Te$_7$(0001) surface, analogous to the non-magnetic parent compound Bi$_2$Te$_3$. Our results render MnBi$_4$Te$_7$ as a band-inverted material with an intrinsic net magnetization and a complex magnetic phase diagram providing a versatile platform for the realization of different topological phases.

cond-mat.mtrl-sci↗

arXiv2018

Detuning the Honeycomb of the {\alpha}-RuCl3 Kitaev lattice: A case of Cr3+ dopant

Fine-tuning chemistry by doping with transition metals enables new perspectives for exploring Kitaev physics on a two-dimensional (2D) honeycomb lattice of {\alpha}-RuCl3, which is promising in the field of quantum information protection and quantum computation. The key parameters to vary by doping are both Heisenberg and Kitaev components of the nearest-neighbor exchange interaction between the Jeff = 1/2 Ru3+ spins, depending strongly on the peculiarities of the crystal structure. Here, we successfully grew single crystals of the solid solution series Ru1-xCrxCl3 with Cr3+ ions coupled to the Ru3+ Kitaev host using chemical vapour transport reaction. The Cr3+ substitution preserves the honeycomb type lattice of {\alpha}-RuCl3 with mixed occupancy of Ru/Cr sites, no hints on cationic order within the layers were found by single crystal X-ray diffraction and transmission electron microscopy investigations. In contrast to the high quality single crystals of {\alpha}-RuCl3 with ABAB ordered layers, the ternary compounds demonstrate a significant stacking disorder along the c-axis direction evidenced by X-ray diffraction and high resolution scanning transmission electron microscopy (HR-STEM). Raman spectra of substituted samples are in line with a symmetry conservation of the parent lattice upon chromium doping. At the same time, magnetic susceptibility data indicate that the Kitaev physics of {\alpha}-RuCl3 is increasingly repressed by the dominant spin-only driven magnetism of Cr3+ in Ru1-xCrxCl3.

cond-mat.str-el↗

arXiv2018

Chemical Aspects of the Antiferromagnetic Topological Insulator MnBi$_{2}$Te$_{4}$

Crystal growth of MnBi$_{2}$Te$_{4}$ has delivered the first experimental corroboration of the 3D antiferromagnetic topological insulator state. Our present results confirm that the synthesis of MnBi$_{2}$Te$_{4}$ can be scaled-up and strengthen it as a promising experimental platform for studies of a crossover between magnetic ordering and non-trivial topology. High-quality single crystals of MnBi$_{2}$Te$_{4}$ are grown by slow cooling within a narrow range between the melting points of Bi$_{2}$Te$_{3}$ (586 {\deg}C) and MnBi$_{2}$Te$_{4}$ (600 {\deg}C). Single crystal X-ray diffraction and electron microscopy reveal ubiquitous antisite defects in both cation sites and, possibly, Mn vacancies. Powders of MnBi$_{2}$Te$_{4}$ can be obtained at subsolidus temperatures, and a complementary thermochemical study establishes a limited high-temperature range of phase stability. Nevertheless, quenched powders are stable at room temperature and exhibit long-range antiferromagnetic ordering below 24 K. The expected Mn(II) out-of-plane magnetic state is confirmed by the magnetization, X-ray photoemission, X-ray absorption and linear dichroism data. MnBi$_{2}$Te$_{4}$ exhibits a metallic type of resistivity in the range 4.5-300 K. The compound is an n-type conductor that reaches a thermoelectric figure of merit up to ZT = 0.17. Angle-resolved photoemission experiments provide evidence for a surface state forming a gapped Dirac cone.

cond-mat.mtrl-sci↗

arXiv2018

Possible Experimental Realization of a Basic Z2 Topological Semimetal

We report experimental and theoretical evidence that GaGeTe is a basic $Z_2$ topological semimetal with three types of charge carriers: bulk-originated electrons and holes as well as surface state electrons. This electronic situation is qualitatively similar to the primer 3D topological insulator Bi2Se3, but important differences account for an unprecedented transport scenario in GaGeTe. High-resolution angle-resolved photoemission spectroscopy combined with advanced band structure calculations show a small indirect energy gap caused by a peculiar band inversion in the \textit{T}-point of the Brillouin zone in GaGeTe. An energy overlap of the valence and conduction bands brings both electron- and hole-like carriers to the Fermi level, while the momentum gap between the corresponding dispersions remains finite. We argue that peculiarities of the electronic spectrum of GaGeTe have a fundamental importance for the physics of topological matter and may boost the material's application potential.

cond-mat.mtrl-sci↗