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Anna N. Morozovska

Publications and source records attributed to Anna N. Morozovska.

At least 109 records · Page 6Linked to original sources

Causal analysis of competing atomistic mechanisms in ferroelectric materials from high-resolution Scanning Transmission Electron Microscopy data

Machine learning has emerged as a powerful tool for the analysis of mesoscopic and atomically resolved images and spectroscopy in electron and scanning probe microscopy, with the applications ranging from feature extraction to information compression and elucidation of relevant order parameters to inversion of imaging data to reconstruct structural models. However, the fundamental limitation of machine learning methods is their correlative nature, leading to extreme susceptibility to confounding factors. Here, we implement the workflow for causal analysis of structural scanning transmission electron microscopy (STEM) data and explore the interplay between physical and chemical effects in ferroelectric perovskite across the ferroelectric-antiferroelectric phase transitions. The combinatorial library of the Sm-doped BiFeO3 is grown to cover the composition range from pure ferroelectric BFO to orthorhombic 20% Sm-doped BFO. Atomically resolved STEM images are acquired for selected compositions and are used to create a set of local compositional, structural, and polarization field descriptors. The information-geometric causal inference (IGCI) and additive noise model (ANM) analysis are used to establish the pairwise causal directions between the descriptors, ordering the data set in the causal direction. The causal chain for IGCI and ANM across the composition is compared and suggests the presence of common causal mechanisms across the composition series. Ultimately, we believe that the causal analysis of the multimodal data will allow exploring the causal links between multiple competing mechanisms that control the emergence of unique functionalities of morphotropic materials and ferroelectric relaxors.

cond-mat.mtrl-sci↗

Electric Field Control of Three-Dimensional Vortex States in Core-Shell Ferroelectric Nanoparticles

In the framework of the Landau-Ginzburg-Devonshire approach coupled with electrostatic equations, we performed finite element modeling of the polarization behavior in a ferroelectric barium titanate core covered with a tunable paraelectric strontium titanate shell placed in a polymer or liquid medium. A stable two-dimensional vortex is formed in the core after a zero-field relaxation of an initial random or poly-domain distribution of the polarization, where the vortex axis is directed along one of the core crystallographic axes. Subsequently, sinusoidal pulses of a homogeneous electric field with variable period, strength, and direction are applied. The field-induced changes of the vortex structure consist in the appearance of an axial kernel in the form of a prolate nanodomain, the kernel growth, an increasing orientation of the polarization along the field, and the onset of a single-domain state. We introduced the term "kernel" to name the prolate nanodomain developed near the vortex axis and polarized perpendicular to the vortex plane. In ferromagnetism, this region is generally known as the vortex core. The vortex states with a kernel possess a manifold degeneracy, appearing from three equiprobable directions of vortex axis, clockwise and counterclockwise directions of polarization rotation along the vortex axis, and two polarization directions in the kernel. This multitude of the vortex states in a single core are promising for applications of core-shell nanoparticles and their ensembles as multi-bit memory and related logic units. The rotation of a vortex kernel over a sphere, possible for the core-shell nanoparticles in a soft matter medium with controllable viscosity, may be used to imitate qubit features.

cond-mat.mes-hall↗

Dynamic manipulation in piezoresponse force microscopy: creating non-equilibrium phases with large electromechanical response

Domains walls and topological defects in ferroelectric materials have emerged as a powerful new paradigm for functional electronic devices including memory and logic. Similarly, wall interactions and dynamics underpin a broad range of mesoscale phenomena ranging from giant electromechanical responses to memory effects. Exploring the functionalities of individual domain walls, their interactions, and controlled modifications of the domain structures is crucial for applications and fundamental physical studies. However, the dynamic nature of these features severely limits studies of their local physics since application of local biases or pressures in piezoresponse force microscopy induce wall displacement as a primary response. Here, we introduce a fundamentally new approach for the control and modification of domain structures based on automated experimentation whereby real space image-based feedback is used to control the tip bias during ferroelectric switching, allowing for modification routes conditioned on domain states under the tip. This automated experiment approach is demonstrated for the exploration of domain wall dynamics and creation of metastable phases with large electromechanical response.

cond-mat.mes-hall↗

Phase Diagrams of Single Layer Two-Dimensional Transition Metal Dichalcogenides: Landau Theory

Single layer (SL) two-dimensional transition metal dichalcogenides (TMDs), such as MoS2, ReS2, WSe2, and MoTe2 have now become the focus of intensive fundamental and applied researches due to their intriguing and tunable physical properties. These materials exhibit a broad range of structural phases that can be induced via elastic strain, chemical doping, and electrostatic field effect. These transitions in turn can open and close the band gap of SL-TMDs, leading to metal-insulator transitions, and lead to emergence of more complex quantum phenomena. These considerations necessitate detailed understanding of the mesoscopic mechanisms of these structural phase transitions. Here we develop the Landau-type thermodynamic description of SL-TMDs on example of SL-(MoS2)1-x-(ReS2)x system and analyze the free energy surfaces, phase diagrams, and order parameter behavior. Our results predict the existence of multiple structural phases with 2-, 6- and 12-fold degenerated energy minima for in-plane and out of plane order parameters. This analysis suggests that out-of-plane ferroelectricity can exist in many of these phases, with the switchable polarization being proportional to the out-of-plane order parameter. We further predict that the domain walls in SL-(MoS2)1-x-(ReS2)x should become conductive above a certain strain threshold.

cond-mat.mtrl-sci↗

Melting of Spatially Modulated Phases in La-doped BiFeO3 at Surfaces and Surface-Domain Wall Junctions

The interplay between the surface and domain wall phenomena in multiferroic LaxBi1-xFeO3 in the vicinity of morphotropic phase transition is explored on the atomic level. Scanning Transmission Electron Microscopy (STEM) has enabled mapping of atomic structures of the material with picometer-level precision, providing direct insight into the spatial distribution of the order parameters in this material and their behavior at surfaces and interfaces. Here, we use the thermodynamic Landau-Ginzburg-Devonshire (LGD) approach to explain the emergence of spatially modulated phases (SMP) in La0.22Bi0.78FeO3 films, and establish that the change of polarization gradient coefficients caused by La-doping is the primary driving mechanisms. The suppression, or "melting", of the SMP in the vicinity of the domain wall surface junction is observed experimentally and simulated in the framework of LGD theory. The melting originated from the system tendency to minimize electrostatic energy caused by long-range stray electric fields outside the film and related depolarization effects inside it. The observed behavior provides insight to the origin of surface and interface behaviors in multiferroics.

cond-mat.mtrl-sci↗

Gate Voltage Control of Transition Metal Dichalcogenide Monolayers Quantum Yield

Two-dimensional transition metal dichalcogenide (2D-TMD) monolayers, which reveal remarkable semiconductor properties, are the subject of active experimental research.Recently it has been shown experimentally that quantum yield in MoS2 and WSe2 monoatomic layers can reach values close to unity when electrostatic doping makes them intrinsic semiconductors. However, the available theoretical description does not give an understanding of the physical mechanisms underlying in the gate voltage control of quantum yield.This work is an attempt to propose a consistent semi-phenomenological theory of photo-induced charge carriers relaxation in 2D-TMDs, which allows obtaining an analytical dependence of the quantum yield on the voltage applied to the FET gate. We consider a standard experimental situation, when the 2D-TMD monolayer and the metal gate are plates of a flat capacitor, and the capacitor charge is proportional to the gate voltage. The dependences of the TMD monolayers quantum yield on the gate voltage and the carrier generation rate have been calculated for the cases of the prevailing recombination of free electrons and holes (radiative and non-radiative Auger recombination) and recombination of excitons (radiative and Auger recombination). In both cases analytical expressions were derived for the dependence of quantum yield on the gate voltage and photo-induced carriers generation rate at a fixed gate voltage. Quantitative agreement with experiment allows concluding about the relevance of the proposed theoretical model for the description of carriers photo-generation and recombination in 2D-TMD monolayers. Obtained results demonstrate the possibilities of 2D-TMD quantum yield control by the gate voltage and indicate that 2D-TMDs are promising candidates for modern optoelectronics devices.

cond-mat.mtrl-sci↗

Controlling the domain structure of ferroelectric nanoparticles using tunable shells

The possibility of controlling the domain structure in spherical nanoparticles of uniaxial and multiaxial ferroelectrics using a shell with tunable dielectric properties is studied in the framework of Landau-Ginzburg-Devonshire theory. Finite element modeling and analytical calculations are performed for Sn2P2S6 and BaTiO3 nanoparticles covered with high-k polymer, temperature dependent isotropic paraelectric strontium titanate, or anisotropic liquid crystal shells with a strongly temperature dependent dielectric permittivity tensor. It appeared that the tunable paraelectric shell with a temperature dependent high dielectric permittivity (~300 - 3000) provides much more efficient screening of the nanoparticle polarization than the polymer shell with a much smaller (~10) temperature-independent permittivity. The tunable dielectric anisotropy of the liquid crystal shell (~ 1 - 100) adds a new level of functionality for the control of ferroelectric domains morphology (including a single-domain state, domain stripes and cylinders, meandering and labyrinthine domains, and polarization flux-closure domains and vortexes) in comparison with isotropic paraelectric and polymer shells. The obtained results indicate the opportunities to control the domain structure morphology of ferroelectric nanoparticles covered with tunable shells, which can lead to the generation of new ferroelectric memory and advanced cryptographic materials.

cond-mat.mtrl-sci↗

Hierarchy of Domain Reconstruction Processes due to Charged Defect Migration in Acceptor Doped Ferroelectrics

Evolution of a stripe array of polarization domains triggered by the oxygen vacancy migration in an acceptor doped ferroelectric is investigated in a self-consistent manner. A comprehensive model based on the Landau-Ginzburg-Devonshire approach includes semiconductor features due to the presence of electrons and holes, and effects of electrostriction and flexoelectricity especially significant near the free surface and domain walls. A domain array spontaneously formed in the absence of an external field is shown to undergo a reconstruction in the course of the gradual oxygen vacancy migration driven by the depolarization fields. The charge defect accumulation near the free ferroelectric surface causes a series of phenomena: (i) symmetry breaking between the positive and negative c-domains, (ii) appearance of an effective dipole layer at the free surface followed by the formation of a surface electrostatic potential, (iii) tilting and recharging of the domain walls, especially pronounced at higher acceptor concentrations. An internal bias field determined by the gain in the free energy of the structure exhibits dependences of its amplitude on time and dopant concentration well comparable with available experimental results on aging in BaTiO3.

cond-mat.mtrl-sci↗

Analytical description of the size effect on pyroelectric and electrocaloric properties of ferroelectric nanoparticles

Using Landau-Ginzburg-Devonshire theory and effective medium approximation, we analytically calculate typical dependences of the pyroelectric and electrocaloric coefficients on external electric field, temperature and radius for spherical single-domain ferroelectric nanoparticles. The considered physical model corresponds to the nanocomposite with small fraction of ferroelectric nanoparticles. Within the framework of the analytical model we establish how the size changes determine the temperature and field behavior pyroelectric and electrocaloric coefficients on example of BaTiO3 nanoparticles covered by a semiconducting shell and placed in a dielectric polymer. We show that by changing the particle size one can induce maxima of the pyroelectric coefficient and electrocaloric temperature variation, control their width, height and sign. Obtained analytical expressions allow selecting the interval of particle sizes, voltage, and/or temperature for which pyroelectric energy conversion and electrocaloric coefficient are optimal for applications. The observed size effect opens the possibility to control pyroelectric and electrocaloric properties of ferroelectric nanocomposites that can be important for their advanced applications in energy convertors and cooling systems.

cond-mat.mtrl-sci↗

Building Free Energy Functional from Atomically-Resolved Imaging: Atomic Scale Phenomena in La-doped BiFeO3

Scanning Transmission Electron Microscopy (STEM) has enabled mapping of atomic structures of solids with sub-pm precision, providing insight to the physics of ferroic phenomena and chemical expansion. However, only a subset of information is available, due to projective nature of imaging in the beam direction. Correspondingly, the analysis often relies on the postulated known form of macroscopic Landau-Ginzburg energy, and some predefined relationship between experimentally determined atomic coordinates and the order parameter field. Here, we propose an approach for exploring the structure of ferroics using reduced order parameter models constructed based on experimental data only. We develop a four sublattices model (FSM) for the analytical description of A-cation displacement in (anti)ferroelectric-antiferrodistortive perovskites of ABO3-type. The model describes the displacements of cation A in four neighboring unit cells and determines the conditions of different structural phases appearance and stability in ABO3. We show that FSM explains the coexistence of rhombohedral (R), orthorhombic (O) and spatially modulated (SM) phases, observed by atomic-resolution STEM in La-doped BiFeO3. Using this approach, we atomically resolve and theoretically model the sublattice asymmetry inherent to the case of the A-site La/Bi cation sublattice in LaxBi1-xFeO3 polymorphs. This approach allows exploring the ferroics behaviors from experimental data only, without additional assumptions on the nature of the order parameter.

cond-mat.mtrl-sci↗

Magnetic dielectric- graphene- ferroelectric system as a promising non-volatile device for modern spintronics

The conductivity of the system magnetic dielectric (EuO) - graphene channel - ferroelectric substrate was considered. The magnetic dielectric locally transforms the band spectrum of graphene by inducing an energy gap in it and making it spin-asymmetric with respect to the free electrons. The range of spontaneous polarization (2- 5)mC/m2 that can be easily realized in thin films of proper and incipient ferroelectrics, was under examination. It was demonstrated, that if the Fermi level in the graphene channel belongs to energy intervals where the graphene band spectrum, modified by EuO, becomes sharply spin-asymmetric, such a device can be an ideal non-volatile spin filter. Controlling of the Fermi level (e.g. by temperature that changes ferroelectric polarization) can convert a spin filter to a spin valve.

cond-mat.mtrl-sci↗

Symmetry of flexoelectric response in ferroics

Using direct matrix method we establish the structure, including the number of nonzero independent elements, of the static flexoelectric coupling tensor f_ijkl for all 32 point groups. We use the point symmetry of elementary cell, previously known evident index-permutation symmetry (f_ijkl= f_jikl) and recently established "hidden" index-permutation symmetry (f_ijkl= f_ilkj). We compare these results and demonstrated that the hidden symmetry of f_ijkl significantly reduces the number of its nonzero independent elements. Using group theory, we find out the explicit form of the tensor f_ijkl and the flexoelectric coupling energy in the form of Lifshitz invariant for several point symmetries most important for applications. For these symmetries we visualize the effective flexoelectric response of the bended plate allowing for both evident and hidden index-permutation symmetries, analyze its anisotropy, and angular dependences. We discuss how the hidden symmetry can significantly simplify the problem of the flexoelectric constants determination from inelastic neutron and Raman scattering experiments due to the minimization of f_ijkl independent components, opening the way for its unambiguous determination from the scattering experiments.

cond-mat.mtrl-sci↗

Giant negative electrostriction and dielectric tunability in a van der Waals layered ferroelectric

The interest in ferroelectric van der Waals crystals arises from the potential to realize ultrathin ferroic systems owing to the reduced surface energy of these materials and the layered structure that allows for exfoliation. Here, we quantitatively unravel giant negative electrostriction of van der Waals layered copper indium thiophosphate (CIPS), which exhibits an electrostrictive coefficient Q33 as high as -3.2 m4/C2 and a resulting bulk piezoelectric coefficient d33 up to -85 pm/V. As a result, the electromechanical response of CIPS is comparable in magnitude to established perovskite ferroelectrics despite possessing a much smaller spontaneous polarization of only a few uC/cm2. In the paraelectric state, readily accessible owing to low transition temperatures, CIPS exhibits large dielectric tunability, similar to widely-used barium strontium titanate, and as a result both giant and continuously tunable electromechanical response. The persistence of electrostrictive and tunable responses in the paraelectric state indicates that even few layer films or nanoparticles will sustain significant electromechanical functionality, offsetting the inevitable suppression of ferroelectric properties in the nanoscale limit. These findings can likely be extended to other ferroelectric transition metal thiophosphates and (quasi-) two-dimensional materials and might facilitate the quest towards novel ultrathin functional devices incorporating electromechanical response.

cond-mat.mtrl-sci↗

Ferromagnetic-like behavior of Bi0.9La0.1FeO3-KBr nanocomposites

We studied magnetostatic response of the Bi0.9La0.1FeO3-KBr composites (BLFO-KBr) consisting of nanosized (about 100 nm) ferrite Bi0.9La0.1FeO3 (BLFO) conjugated with fine grinded ionic conducting KBr. When the fraction of KBr is rather small (less than 15 wt percent) the magnetic response of the composite is very weak and similar to that observed for the BLFO (pure KBr matrix without Bi1-xLaxFeO3 has no magnetic response as anticipated). However, when the fraction of KBr increases above 15percent, the magnetic response of the composite changes substantially and the field dependence of magnetization reveals ferromagnetic-like hysteresis loop with a remanent magnetization about 0.14 emu/g and coercive field about 1.8 Tesla (at room temperature). Nothing similar to the ferromagnetic-like hysteresis loop can be observed in BLFO ceramics, which magnetization quasi linearly increases with magnetic field. Different physical mechanisms were considered to explain the unusual experimental results for BLFO-KBr nanocomposites, but only those among them, which are highly sensitive to the interaction of antiferromagnetic Bi0.9La0.1FeO3 with ionic conductor KBr, can be relevant. An appropriate mechanism turned out to be ferro-magneto-ionic coupling.

cond-mat.mtrl-sci↗

Intrinsic structural instabilities of domain walls driven by gradient couplings: meandering anferrodistortive-ferroelectric domain walls in BiFeO3

Using Landau-Ginzburg-Devonshire approach, we predict the intrinsic instability of the ferroelectric-ferroelastic domain walls in the multiferroic BiFeO3 emerging from the interplay between the gradient terms of the antiferrodistortive and ferroelectric order parameters at the walls. These instabilities are the interface analogue of the structural instabilities in the vicinity of phase coexistence in the bulk; and so they do not steam from incomplete polarization screening in thin films or its spatial confinement, electrostrictive or flexoelectric coupling. The effect of BiFeO3 material parameters on the 71 degree, 109 degree, and 180 degree walls is explored, and it is shown that the meandering instability appears at 109 degree, and 180 degree walls for small gradient energies, and the walls become straight and broaden for higher gradients. In contrast to the 180 degree and 109 degree domain walls, uncharged 71 degree walls are always straight, and their width increases with increasing the tilt gradient coefficient. The wall instability and associated intrinsic meandering provide a new insight into the behavior of morphotropic and relaxor materials, wall pinning, and mechanisms of interactions between order parameter fields and local microstructure.

cond-mat.mtrl-sci↗

Size effect of soft phonon dispersion law in nanosized ferroics

Using Landau-Ginsburg-Devonshire theory, we derive and analyze analytical expressions for the frequency dispersion of soft phonon modes in nanosized ferroics and perform numerical calculations for a thin SrTiO3 film. We revealed the pronounced "true" size effect in the dependence of soft phonon spatial dispersion on the film thickness and predict that it can lead to the "apparent" or "false" size effect of dynamic flexoelectric coupling constants

cond-mat.mtrl-sci↗

Possible Electrochemical Origin of Ferroelectricity in HfO2 Thin Films

Recent observations of unusual ferroelectricity in thin films of HfO_2 and related materials have attracted broad interest to the materials and led to the emergence of a number of competing models for observed behaviors. Here we develop the electrochemical mechanism of observed ferroelectric-like behaviors, namely the collective phenomena of elastic and electric dipoles originated from oxygen vacancies formation in the vicinity of film surfaces, as well as from grain boundaries and other types of inhomogeneities inside the film. The ferroelectric phase is induced by the "electrochemical" coupling, that is the joint action of the omnipresent electrostriction and "chemical" pressure, which lead to the sign change of the positive coefficient alfa in the quadratic term alfa*P^2 in the order-disorder type thermodynamic functional depending on polarization P. Negative coefficient alfa becomes the driving force of the transition to the long-range ordered ferroelectric phase with the spontaneous polarization P in the direction normal to the film surface. Using the above ideas, we estimated that the reversible ferroelectric polarization, as high as (0.05 - 0.2) C/m^2, can be induced by oxygen vacancies in HfO_2 films of thickness less than (20 - 30) nm. Semi-quantitative agreement with available experimental data is demonstrated.

cond-mat.mtrl-sci↗

Oxygen vacancies induced ferroelectricity in relaxors with ABO3 structure

The consideration of oxygen vacancies influence on the relaxors with perovskite structure was considered in the framework of Landau-Ginzburg-Devonshire phenomenological theory. The theory applicability for relaxors is based on the existence of some hidden soft phonon polar mode in them, and its frequency could be zero at some negative temperature TC*. Main attention was paid to PZN-PLZT relaxor described by formula 0.3Pb(Zn1/3Nb2/3)O3-0.7(Pb0.96La0.04(ZrxTi1-x)0.99O3) with x = 0.52, where earlier experimental investigation of oxygen vacancies influence on the polar properties was performed and the evidence of oxygen vacancies induced ferroelectricity was obtained. Since the oxygen vacancies are known to be elastic dipoles, they influence upon elastic and electric fields due to Vegard and flexoelectric coupling. We include the vacancies elastic and electrostrictive contribution into free energy functional. The calculations of the vacancies impact on polar properties were performed using their concentration distribution function. It was shown that the negative Curie temperature of a relaxor TC* is renormalized by the elastic dipoles due to the electrostrictive coupling and can become positive at some large enough concentration of the vacancies. We calculated the local polarization and electric field induced by the flexo-chemical coupling in dependence on the concentration of oxygen vacancies. The coexistence of FE phase and relaxor state can take place because of inhomogeneity of vacancies concentration distribution.

cond-mat.mtrl-sci↗