arXiv subjects

Anna N. Morozovska

Publications and source records attributed to Anna N. Morozovska.

At least 145 records · Page 8Linked to original sources

arXiv2017

Piezoresponse of ferroelectric films in ferroionic states: time and voltage dynamics

The interplay between electrochemical surface charges and bulk ferroelectricity in thin films gives rise to a continuum of coupled ferro-ionic states. These states are exquisitely sensitive to chemical and electric conditions at the surfaces, applied voltage, and oxygen pressure. Using the analytical approach combining the Ginzburg-Landau-Devonshire description of the ferroelectricity with Langmuir adsorption isotherm for the ions at the film surface, we have studied the temperature-, time- and field- dependent polarization changes and electromechanical response of the ferro-ionic states. The responses are found to be inseparable in thermodynamic equilibrium and at low frequencies of applied voltage. The states become separable in high frequency dynamic mode due to the several orders of magnitude difference in the relaxation times of ferroelectric polarization and surface ions charge density. These studies provide an insight into dynamic behavior of nanoscale ferroelectrics with open surface exposed to different kinds of electrochemically active gaseous surrounding.

cond-mat.mtrl-sci↗

arXiv2017

Ferroionic states in ferroelectric thin films

The electric coupling between surface ions and bulk ferroelectricity gives rise to a continuum of mixed states in ferroelectric thin films, exquisitely sensitive to temperature and external factors, such as applied voltage and oxygen pressure. Here we develop the comprehensive analytical description of these coupled ferroelectric and ionic ("ferroionic") states by combining the Ginzburg-Landau-Devonshire description of the ferroelectric properties of the film with Langmuir adsorption model for the electrochemical reaction at the film surface. We explore the thermodynamic and kinetic characteristics of the ferroionic states as a function of temperature, film thickness, and external electric potential. These studies provide a new insight into mesoscopic properties of ferroelectric thin films, whose surface is exposed to chemical environment as screening charges supplier.

cond-mat.mtrl-sci↗

arXiv2017

Tuning the Polar States of Ferroelectric Films via Surface Charges and Flexoelectricity

Using the self-consistent Landau-Ginzburg-Devonshire approach we simulate and analyze the spontaneous formation of the domain structure in thin ferroelectric films covered with the surface screening charge of the specific nature (Bardeen-type surface states). Hence we consider the competition between the screening and the domain formation as alternative ways to reduce the electrostatic energy and reveal unusual peculiarities of distributions of polarization, electric and elastic fields conditioned by the surface screening length and the flexocoupling strength. We have established that the critical thickness of the film and its transition temperature to a paraelectric phase strongly depend on the Bardeen screening length, while the flexocoupling affects the polarization rotation and closure domain structure and induces ribbon-like nano-scale domains in the film depth far from the top open surface. Hence the joint action of the surface screening (originating from e.g. the adsorption of ambient ions or surface states) and flexocoupling may remarkably modify polar and electromechanical properties of thin ferroelectric films.

cond-mat.mtrl-sci↗

arXiv2017

P-N junctions dynamics in graphene channel induced by ferroelectric domains motion

The p-n junctions dynamics in graphene channel induced by stripe domains nucleation, motion and reversal in a ferroelectric substrate is explored using self-consistent approach based on Landau-Ginzburg-Devonshire phenomenology combined with classical electrostatics. We revealed the extrinsic size effect in the dependence of the graphene channel conductivity on its length. For the case of perfect electric contact between the ferroelectric and graphene, relatively low gate voltages are required to induce the pronounced hysteresis of ferroelectric polarization and graphene charge in response to the periodic gate voltage. Pronounced nonlinear hysteresis of graphene conductance with a wide memory window corresponds to high amplitudes of gate voltage. We predict that the considered nano-structure "top gate/dielectric layer/graphene channel/ferroelectric substrate" can be a promising candidate for the fabrication of new generation of modulators and rectifiers based on the graphene p-n junctions.

cond-mat.mtrl-sci↗

arXiv2017

Size Effects of Ferroelectric and Magnetoelectric Properties of Semi-ellipsoidal Bismuth Ferrite Nanoparticles

Bismuth ferrite (BiFeO3) is one of the most promising multiferroics with a sufficiently high ferroelectric (FE) and antiferromagnetic transition temperatures, and magnetoelectric (ME) coupling coefficient at room temperature, and thus it is highly sensitive to the impact of cross-influence of applied electric and magnetic fields. According to the urgent demands of nanotechnology miniaturization for ultra-high density data storage in advanced nonvolatile memory cells, it is very important to reduce the sizes of multiferroic nanoparticles in the self-assembled arrays without serious deterioration of their properties. We study size effects of the phase diagrams, FE and ME properties of semi-ellipsoidal BiFeO3 nanoparticles clamped to a rigid conductive substrate. The spatial distribution of the spontaneous polarization vector inside the nanoparticles, phase diagrams and paramagnetoelectric (PME) coefficient were calculated in the framework of modified Landau-Ginzburg-Devonshire (LGD) approach. Analytical expressions were derived for the dependences of the FE transition temperature, average polarization, linear dielectric susceptibility and PME coefficient on the particle sizes for a general case of a semi-ellipsoidal nanoparticles with three different semi-axes a, b and height c. The analyses of the obtained results leads to the conclusion that the size effect of the phase diagrams, spontaneous polarization and PME coefficient is rather sensitive to the particle sizes aspect ratio in the polarization direction, and less sensitive to the absolute values of the sizes per se.

cond-mat.mtrl-sci↗

arXiv2016

Missed surface waves in non-piezoelectric solids

The physical processes taking place at the surface and near the surface of solids is so rich and versatile that sometimes they seem to be the inexhaustible subject of fundamental research. In particular, since the discovery by Lord Rayleigh surface waves in solids focus increased attention of scientists, because their experimental and theoretical studies can serve as the source of unique information about the surface impact on the dynamics and structure of the atomic lattice, structural instabilities and phase transitions induced by the surface, and explore the properties of phonons in spatially-confined systems The existence of purely shear surface wave is impossible in non-piezoelectrics within the framework of the classical theory of elasticity, because the Rayleigh surface waves have different polarization and are the mixture of shear and dilatational waves. We showed that the "forbidden" shear surface wave (shortly Flexo-SW) can propagate near the surface of all crystalline dielectrics due to the omnipresent flexoelectric coupling. The appearance and penetration depth of the Flexo-SW is ruled by the flexocoupling strength. In particular the penetration depth of transverse acoustic mode diverges in the absence of the flexoelectric coupling and so these waves become indistinguishable from the bulk waves. For paraelectrics such as strontium titanate with typical flexoeletric coefficients (~2V) the penetration depth of the Flexo-SW can reach more than tens microns at THz frequencies. The circumstances can explain the absence of experimental observations of the missed surface waves in thick layers and bulk materials. However we predict that the peaks of neutron intensity corresponding to the surface Flexo-SW and bulk phonon modes can be separated in non-piezoelectric thin films of thickness ~(20 - 50)nm.

cond-mat.mtrl-sci↗

arXiv2016

Limits for the graphene on ferroelectric domain wall p-n-junction rectifier for different regimes of current

Here we present the theory of the conductivity of pn junction (pnJ) in graphene channel, placed on ferroelectric substrate, caused by ferroelectric domain wall (FDW) for the case of arbitrary current regime: from ballistic to diffusive one. We calculated the ratio of the pnJ conductions for opposite polarities of voltages, applied to source and drain electrodes of the channel,G+/G- as the function of the graphene channel length L, electron mean free path λ and ferroelectric substrate permittivity. We have demonstrated, that the small values of G+/G-(0.1 and smaller), which correspond to efficient graphene pnJ based rectifier, can be obtained for the ferroelectrics with high and for the ratios of L/λ~1 or smaller. However, for ferroelectrics with extremely high permittivity(relaxor or PbZrxTi1-xO3 with composition x near the morphotropic phase boundary x=0.52) the ratio G+/G- can be essentially smaller then unity for the case of a pronounced diffusive regime of current as well. This makes the ferroelectric substrates with high permittivity excellent candidates for the fabrication of new generation of rectifiers based on the graphene pnJ. Temperature effect on ratio was studied within Landau-Ginzburg-Devonshire approach. We have demonstrated that rectifying properties of the graphene pnJ become better in the vicinity of Curie temperature. However, for the temperatures higher than Curie temperature the rectifying effect vanishes due to the ferroelectric polarization disappearance.

cond-mat.mtrl-sci↗

arXiv2016

Hysteretic phenomena in GFET: general theory and experiment

We propose a general theory for the analytical description of versatile hysteretic phenomena in a graphene field effect transistor (GFET) allowing for the existence of the external dipoles on graphene free surface and the localized states at the graphene-surface interface. We demonstrated that the absorbed dipole molecules (e.g. dissociated or highly polarized water molecules) can cause hysteretic form of carrier concentration as a function of gate voltage and corresponding dependence of graphene conductivity in GFET on the substrate of different types, including the most common SiO2 and ferroelectric ones. It was shown that the increase of the gate voltage sweeping rate leads to the complete vanishing of hysteresis for GFET on SiO2 substrate, as well as for GFET on ferroelectric substrate for applied electric fields E less than the critical value Ec. For E>Ec the crossover from the hysteresis to antihysteresis takes place. These results well correlate with the available experimental data up to the quantitative agreement. Proposed model takes into consideration the carriers trapping from the graphene channel by the interface states and describes the antihysteresis in GFET on PZT substrate well enough. Obtained results clarify the fundamental principles of GFET operation as well as can be directly applied to describe the basic characteristics of advanced nonvolatile ultra-fast memory devices using GFET on versatile substrates.

cond-mat.mes-hall↗

arXiv2016

Flexocoupling impact on the kinetics of polarization reversal

The impact of flexoelectric coupling on polarization reversal kinetics and space charge dynamics in thin films of ferroelectric-semiconductors has been theoretically studied. The relaxation-type Landau-Khalatnikov equation together with the Poisson equation and the theory of elasticity equations have been used to calculate in a self-consistent way the spatial-temporal development of ferroelectric polarization, electric potential and space charge, elastic stresses, strains and their gradients. The analysis of the obtained results reveals a moderate increase of the flexocoupling influence on the polarization, elastic strain, electric potential and space charge distribution dynamics with the decrease of a ferroelectric film thickness. In contrast, the dependence of polarization switching time on the applied electric field is strongly affected by the flexocoupling strength. The polarization reversal process consists typically of two stages, the first stage has no characteristic time, while the second one exhibits a switching time strongly dependent on the applied electric field.

cond-mat.mtrl-sci↗

arXiv2016

Extrinsic size effect of pyroelectric response of ferroelectric films

We developed a theoretical model for the calculation of the main characteristics of pyroelectric response of pyroactive multilayer structures, which are basic elements of modern pyroelectric detectors of radiation and other transducers. In the framework of the proposed model, the dependences of the pyroelectric response frequency spectra on the ferroelectric film thickness have been investigated. It was found that a pronounced extrinsic size effect is inherent to the pyroelectric response frequency spectra, such as the strong thickness dependence of the response maximal value and its frequency position. Thickness dependences of the frequency position of the pyroelectric response maximum and the optimal thickness of the pyroactive ferroelectric film are calculated. The frequency spectra of the pyroelectric current and voltage calculated theoretically are in quantitative agreement with experimental ones for Al/P(VDF-TrFE)/Ti/Si pyroactive structure. Developed procedure is important for improving the sensitivity of pyroelectric devices. Obtained analytical expressions allow us to optimize the performances of pyroactive elements using the existence of the size effect, which depend on pyroactive layer and substrate thicknesses, as well as on the conditions of heat transfer and exchange at corresponding boundaries of the pyroactive structure.

cond-mat.mtrl-sci↗

arXiv2016

The influence of elastic strain gradient on the upper limit of flexocoupling strength, spatially-modulated phases and soft phonon dispersion in ferroics

Within the framework of Landau-Ginzburg-Devonshire (LGD) theory we studied the role of the flexocoupling between the order parameter and elastic strain gradients in the stability of a spatially-modulated phase (SMP) in ferroics with commensurate and incommensurate long-range ordered phases under the presence of squired elastic strain gradient. The squired elastic strain gradient is required for the free energy stability to arbitrary strain gradients. Obtained analytical expressions showed that the fundamental upper limit for the magnitude of the static bulk flexoelectric effect strength, established by Yudin and Tagantsev under the absence of squired elastic strain gradient and higher order gradients terms, should be substituted by the temperature-dependent condition on the flexoelectric coupling strength under the presence of the gradient terms. Moreover, we established that the SMP appears and becomes stable in commensurate ferroics if the flexocoupling constant exceeds the critical value, defined by the reduced temperature, strain and order parameter gradients constants, striction and expansion coefficients in the LGD functional. We calculated the soft phonon dispersion in ferroics with commensurate and incommensurate long-range ordered phases allowing for the squired elastic strain gradient, as well as static and dynamic flexocoupling. Appeared that the dispersion for the optic mode is slightly sensitive to the flexocoupling, while the dispersion of acoustic mode strongly depends on the coupling strength. Obtained results demonstrate that the non-trivial differences in the dispersion of optic and acoustic modes appear under the change of flexocoupling constant.

cond-mat.mtrl-sci↗

arXiv2016

Flexocoupling impact on the size effects of piezo- response and conductance in mixed-type ferroelectrics-semiconductors under applied pressure

Flexocoupling impact on the size effects of the spontaneous polarization, effective piezo-response, elastic strain and compliance, carrier concentration and piezo-conductance have been calculated in thin films of ferroelectric semiconductors with mixed-type conductivity under applied pressure. Analysis of the self-consistent calculation results revealed that the thickness dependences of aforementioned physical quantities, calculated at zero and nonzero flexoelectric couplings, are very similar under zero applied pressure, but become strongly different under the application of external pressure pext. At that the differences become noticeably stronger for the film surface under compression than under tension. The impact of the Vegard mechanism on the size effects is weaker in comparison with flexocoupling except for the thickness dependence of the piezo-conductance. Without flexoelectric coupling the studied physical quantities manifest conventional peculiarities that are characteristic of the size-induced phase transitions. Namely, when the film thickness h approaches the critical thickness hcr the transition to paraelectric phase occurs. The combined effect of flexoelectric coupling and external pressure induces polarizations at the film surfaces, which cause the electric built-in field that destroys the thickness-induced phase transition to paraelectric phase at h= hcr and induces the electret-like state with irreversible spontaneous polarization at h<hcr. The built-in field leads to noticeable increase of the average strain and elastic compliance under the film thickness decrease below hcr that scales as 1/h at small thicknesses h. The changes of the electron concentration by several orders of magnitude under positive or negative pressures can lead to the occurrence of high- or low-conductivity states, i.e. the nonvolatile piezo-resistive switching.

cond-mat.mtrl-sci↗

arXiv2016

Ballistic conductivity of graphene channel with p-n junction on ferroelectric domain wall

We study the impact of the ferroelectric domain wall on the ballistic conductance of the single-layer graphene channel in the heterostructure graphene / physical gap / ferroelectric film using Wentzel-Kramers-Brillouin approximation. Both self-consistent numerical modeling of the electric field and space charge dynamics in the heterostructure and approximate analytical theory show that the domain wall contact with the surface creates p-n junction in graphene channel. We calculated that the carriers' concentration induced in graphene by uncompensated ferroelectric dipoles originated from the spontaneous polarization abrupt near the surface can reach the values of 1019 m-2 order, which is in two orders higher than it can be obtained for the gate doped graphene on non-ferroelectric substrates. Therefore we predict that graphene channel with the p-n junction caused by ferroelectric domain wall would be characterized by rather high ballistic conductivity.

cond-mat.mtrl-sci↗

arXiv2015

Reentrant phase in nanoferroics induced by the flexoelectric and Vegard effects

We explore the impact of the flexoelectric effect and Vegard effect (chemical pressure) on the phase diagrams, long-range polar order and related physical properties of the spherical ferroelectric nanoparticles using Landau-Ginzburg-Devonshire phenomenological approach. The synergy of these effects can lead to the remarkable changes of the nanoparticles' phase diagrams. In particular, a commonly expected transition from ferroelectric to paraelectric phase at some small critical size is absent; so that the critical size loses its sense. Contrary, the stabilization of the ferroelectric phase manifests itself by the enhancement of the transition temperature and polarization with the particle size decrease. Ferroelectric phase reentrant phenomenon was observed earlier in the tetragonal BaTiO3 nanospheres of radii 5-50 nm [Zhu et al., JAP 112, 064110 (2012)] and stayed unexplained up to now. Our calculations have shown the physical mechanism of the exciting phenomenon is the flexo-chemo-effect. Since the spontaneous flexoelectric coupling, as well as ion vacancies, should exist in any nanostructured ferroelectrics, obtained analytical results can be valid for many nanoferroelectrics, where reentrant phases appearance can be forecasted.

cond-mat.mtrl-sci↗

arXiv2015

Theoretical description of anomalous properties of novel room temperature multiferroics Pb(Fe1/2Ta1/2)x(Zr0.53Ti0.47)1-xO3 and Pb(Fe1/2Nb1/2)x(Zr0.53Ti0.47)1-xO3

The theoretical description of the anomalous ferroelectric, ferromagnetic and magnetoelectric properties of Pb(Fe1/2Ta1/2)x(Zr0.53Ti0.47)1-xO3 and Pb(Fe1/2Nb1/2)x(Zr0.53Ti0.47)1-xO3 micro-ceramics is given. We performed calculations of temperature, composition and external field dependence of ferroelectric, ferromagnetic and antiferromagnetic phases transition temperatures, remanent polarization, magnetization, hysteresis loops, coercive fields, dielectric permittivity and magnetoelectric coupling. Special attention was paid to comparison of the developed theory with experiments. It appeared possible to describe adequately the main experimental results including a reasonable agreement between the shape of calculated hysteresis loops and remnant polarization value with measured loops and polarization. Information about linear and nonlinear magnetoelectric coupling coefficients was extracted from the experimental data. From the fitting of experimental data with theoretical formula it appeared possible to obtain composition dependence of Curie-Weiss constant that is known to be inversely proportional to harmonic (linear) dielectric stiffness, as well as the strong nonlinear dependence of anharmonic parameters of free energy. Keeping in mind the essential influence of these parameters on the multiferroic properties the obtained results open the way to govern practically all the material properties with the help of suitable choice of composition. The forecast of the strong enough influence of antiferrodistortive order parameter on the transition temperatures and so on the phase diagrams and properties of multiferroics is made on the basis of the developed theory.

cond-mat.mtrl-sci↗

arXiv2015

Self-consistent theory of nanodomain formation on non-polar surfaces of ferroelectrics

We propose a self-consistent theoretical approach capable to describe the peculiarities of the anisotropic nanodomain formation induced by a charged AFM probe on non-polar cuts of ferroelectrics. The proposed semi-phenomenological approach accounts for the difference of the threshold fields required for the domain wall motion along non-polar X- and Y - cuts, and polar Z - cut of LiNbO3. The effect steams from the fact, that the minimal distance between the equilibrium atomic positions of domain wall and the profile of lattice pinning barrier appeared different for different directions due to the crystallographic anisotropy. Using relaxation-type equation with cubic nonlinearity we calculated the polarization reversal dynamics during the probe-induced nanodomain formation for different threshold field values. The different velocity of domain growth and consequently equilibrium domain sizes on X-, Y- and Z-cuts of LiNbO3 originate from the anisotropy of the threshold field. Note that the smaller is the threshold field the larger are the domain sizes, and the fact allows explaining several times difference in nanodomain length experimentally observed on X- and Y-cuts of LiNbO3. Obtained results can give insight into the nanoscale anisotropic dynamics of polarization reversal in strongly inhomogeneous electric field.

cond-mat.mtrl-sci↗

arXiv2015

Flexocoupling impact on the generalized susceptibility and soft phonon modes in the ordered phase of ferroics

Flexoelectric effect impact on the generalized susceptibility and soft phonons dispersion was not studied in the long-range ordered phases of ferroics. The gap in the knowledge motivated us to establish the impact of the flexocoupling on the correlation function of the long-range order parameter fluctuations in ferroelectric phase of ferroics with local disordering sources. Within Landau-Ginzburg-Devonshire approach we obtained analytical expressions for the generalized susceptibility and phonon dispersion relations in the ferroelectric phase. Unexpectedly, the joint action of static and dynamic flexoelectric effect induces non-diagonal components of generalized susceptibility, which amplitude is proportional to the convolution of the spontaneous polarization with flexocoupling constants. The flexocoupling essentially broaden the k-spectrum of generalized susceptibility and so decreases the correlation radii, as well as leads to the additional "pushing away" of the optical and acoustic soft mode phonon branches. The contribution of spontaneous polarization via ferroelectric nonlinearity and electrostriction mechanisms can lead to both broadening and narrowing on the susceptibility k-spectrum. Due to the joint action of flexoelectric coupling and spontaneous polarization the degeneration of the transverse optic and acoustic modes disappears in the soft phonon spectrum in a ferroelectric phase in comparison with the spectra in a paraelectric phase. These effects have been studied quantitatively for ferroelectric lead zirconate titanate using realistic values of static and dynamic flexocouplings and cubic symmetry approximation for the elastic properties. Also we derived general expressions for correlation function for arbitrary symmetry, elastic and electrostrictive anisotropy.

cond-mat.mtrl-sci↗

arXiv2015

Linear roto-antiferromagnetic effect in multiferroics: physical manifestations

Using the theory of symmetry and the microscopic model we predicted the possibility of a linear roto-antiferromagnetic effect in the perovskites with structural antiferrodistortive and antiferromagnetic long-range ordering and found the necessary conditions of its occurrence. The main physical manifestations of this effect are the smearing of the antiferromagnetic transition and the jump of the specific heat near it. In the absence of external fields linear roto-antiferromagnetic coupling can induce a weak antiferromagnetic ordering above the Neel temperature, but below the temperature of antiferrodistortive transition. Therefore, there is the possibility of observing weak antiferromagnetism in multiferroics such as bismuth ferrite (BiFeO3) at temperatures T>TN, for which the Neel temperature TN is about 645 K, and the antiferrodistortive transition temperature is about 1200 K. By quantitative comparison with experiment we made estimations of the linear roto-antiferromagnetic effect in the solid solutions of multiferroic Bi1-xRxFeO3 (R=La, Nd).

cond-mat.mtrl-sci↗