arXiv subjects

Anna Nyáry

Publications and source records attributed to Anna Nyáry.

5 recordsLinked to original sources

arXiv2026

Highly Efficient Functionalization of hBN with Lithium Oxalate: A Multifunctional Platform for Composites, Ion Transport, and Spin Labeling

Multifunctional solid-state materials are crucial for enabling safer and simpler lithium battery architectures. Here we report a scalable, solvent-free mechanochemical strategy to overcome the chemical inertness of hexagonal boron nitride and produce Li$_2$(BN)$_6$C$_2$O$_4$ (LBNCO), a lithium-rich boron nitride nanostructure. High-energy milling simultaneously exfoliates hBN and induces robust covalent oxalate functionalization, yielding a nanocrystalline lamellar compound with intrinsically incorporated lithium. LBNCO exhibits Li$^+$ ionic conductivity, electronic insulation, and thermal stability exceeding $350~^{\circ}$C. Additional mechanochemical processing enables further lithium enrichment without compromising chemical stability, allowing tunable ionic conductivity. By integrating ion transport, mechanical robustness, and thermal stability within a single material, LBNCO establishes a new platform for solid-state lithium batteries and related technologies.

cond-mat.mtrl-sci↗

arXiv2026

Anisotropy, frustration and saddle point in the twisted Kagome antiferromagnet ErPdPb

The kagome lattice, with its inherent geometric frustration, provides a rich platform for exploring intriguing magnetic phenomena and topological electronic structures. In reduced-symmetry structures, such as twisted kagome systems involving rare earth elements, additional anisotropy can arise, enabling intriguing properties including spin-ice states, magnetocaloric effects, noncollinear magnetic ordering, and anomalous Hall effect. Here, we report the synthesis of single crystals of ErPdPb, which features a twisted kagome lattice net of Er atoms within the hexagonal ZrNiAl-type structure, and we investigate its magnetic, electronic, and thermal properties. The material exhibits antiferromagnetic ordering below 2.2 K, consistently observed in magnetic, transport, and heat capacity measurements. Magnetization measurements reveal 1/3 metamagnetic steps along the c-axis below the Néel temperature, suggesting an Ising-spin-like state on the twisted kagome lattice. A pronounced anisotropy between in-plane and out-of-plane resistivity is observed throughout the temperature range of 1.8-300 K, and the compound exhibits a significant frustration index of 13.6 (12.7) along the c-axis (ab-plane). Heat capacity measurements show a broad hump at 2.2 K, with an additional increase below 0.5 K. The anisotropic magnetic properties are further explored through density functional theory (DFT) calculations, which suggest strong easy-axis anisotropy, consistent with experimental magnetic measurements and crystal-field model expectations, and quasi-one-dimensional bands and a spin-split saddle point at the zone center.

cond-mat.str-el↗

arXiv2025

Surface Chemistry-Driven Oxidation Mechanisms in Ti$_{\text{3}}$C$_{\text{2}}$T$_{\textit{x}}$ MXenes

Ti$_3$C$_2$T$_x$ is a leading compound within the MXenes family and can find host in widespread applications. It is synthesized by selectively etching layers from the Ti$_3$AlC$_2$ precursor, and this process typically introduces surface terminations, T$_x$, such as $-$OH, $=$O, or $-$F. However, the aggressive chemical conditions required for its preparation, as well as exposure to air, humidity, and heat, can lead to impurity phases that potentially compromise its desirable properties. We reveal a two-step oxidation process during heat treatment, where initial oxidation occurs between layers without altering the integrity of the Ti$_3$C$_2$ layered structure, followed by the formation of anatase TiO$_2$ at elevated temperatures. The process was carefully monitored using \emph{in situ} Raman spectroscopy and \emph{in situ} microwave conductivity measurements, employed to Ti$_3$C$_2$T$_x$ prepared using various etching techniques involving concentrated HF, LiF + HCl, and HF + HCl mixtures. The oxidation process is heavily influenced by the synthesis route and surface chemistry of Ti$_3$C$_2$T$_x$, with fluoride and oxyfluoride groups playing a pivotal role in stabilizing the anatase phase. The absence of these groups, in contrast, can lead to the formation of rutile TiO$_2$.

cond-mat.mtrl-sci↗

arXiv2024

Benchmarking stochasticity behind reproducibility: denoising strategies in Ta$_2$O$_5$ memristors

Reproducibility, endurance, driftless data retention, and fine resolution of the programmable conductance weights are key technological requirements against memristive artificial synapses in neural network applications. However, the inherent fluctuations in the active volume impose severe constraints on the weight resolution. In order to understand and push these limits, a comprehensive noise benchmarking and noise reduction protocol is introduced. Our approach goes beyond the measurement of steady-state readout noise levels and tracks the voltage-dependent noise characteristics all along the resistive switching $I(V)$ curves. Furthermore, we investigate the tunability of the noise level by dedicated voltage cycling schemes in our filamentary Ta$_2$O$_5$ memristors. This analysis highlights a broad, order-of-magnitude variability of the possible noise levels behind seemingly reproducible switching cycles. Our nonlinear noise spectroscopy measurements identify a subthreshold voltage region with voltage-boosted fluctuations. This voltage range enables the reconfiguration of the fluctuators without resistive switching, yielding a highly denoised state within a few subthreshold cycles.

cond-mat.mes-hall↗

arXiv2023

Voltage-time dilemma and stochastic threshold voltage variation in pure silver atomic switches

The formation and dissolution of silver nanowires plays a fundamental role in a broad range of resistive switching devices, fundamentally relying on the electrochemical metallization phenomenon. It was shown, however, that resistive switching may also appear in pure metallic nanowires lacking any silver-ion-hosting embedding environment, but this pure atomic switching mechanism fundamentally differs from the conventional electrochemical-metallization-based resistive switching. To facilitate the quantitative description of the former phenomenon, we investigate broad range of Ag atomic junctions with a special focus on the frequency-dependence and the fundamentally stochastic cycle-to-cycle variation of the switching threshold voltage. These devices are established in an ultra-high purity environment where electrochemical metallization can be excluded. The measured characteristics are successfully described by a vibrational pumping model, yielding consistent predictions for the weak frequency dependence and the large variance of the switching threshold voltage. We also demonstrate that electrochemical-metallization-based resistive switching and pure atomic switching may appear in the same device structure, and therefore the proper understanding of the pure atomic switching mechanism has a distinguished importance in silver-based electrochemical metallization cells.

cond-mat.mes-hall↗