arXiv subjects

Annick Loiseau

Publications and source records attributed to Annick Loiseau.

At least 19 recordsLinked to original sources

arXiv2026

Networking Molecular Quantum Emitters on a Single Chain : From Single to Cooperative Emitters

Engineering light-matter interactions between multiple free-space quantum emitters is a central challenge for scalable quantum photonic technologies. In particular, accessing regimes of coherent emitter-emitter interactions, where several emitters are coupled through a shared electromagnetic environment, is essential for coherent emission and quantum functionalities. Such interactions require precise control over emitter separation and stabilization at sub-wavelength distances, a level of spatial organization that remains extremely difficult to achieve at the molecular scale in solid-state systems. Here we introduce Encoded Quantum Chains (EQC), a one-dimensional architecture in which cooperative radiative behaviour is programmed through spatial encoding of identical molecular emitters. Organic emitters and inert spacer molecules are co-encapsulated inside dielectric boron nitride nanotubes (BNNTs), enabling statistical control of intermolecular spacing from nanometres to micrometres while enforcing dipole alignment and one-dimensional confinement. Time-resolved fluorescence under ambient conditions reveals accelerated radiative decay, enhanced emission rates per emitter, and the emergence of non-mono-exponential dynamics as spacing falls below the optical wavelength, consistent with cooperative radiative states in one dimension. Bundling of EQCs enables coupling between emitters in neighbouring BNNTs, driving a dimensional crossover toward higher-dimensional delocalisation of the excitation. This modular building-block approach provides a scalable route to engineer light-matter interactions and many-body optical phenomena in confined molecular systems, opening new opportunities for distributed single-photon sources, programmable quantum emitters, and photonic architectures for quantum technologies.

cond-mat.mtrl-sci↗

arXiv2025

Straightforward Method to Orient Black Phosphorus from Bulk to Thin Layers using a Standard Green Laser

The crystallographic orientation of anisotropic 2D materials plays a crucial role in their physical properties and device performance. However, standard orientation techniques such as transmission electron microscopy (TEM) or X-ray diffraction (XRD) can be complex and less accessible for routine characterization. In this study, we investigate the orientation of black phosphorus (BP) from bulk crystals to thin layers using angle-resolved polarized Raman spectroscopy (ARPRS) with a single-wavelength (514 nm) Raman setup. By incorporating thickness-dependent interference effects and anisotropic optical indices, this approach provides a reliable framework for orientation determination across different BP thicknesses. The method is validated through direct orientation measurements using TEM and Electron Backscattering Diffraction (EBSD), confirming its applicability to both thick and ultrathin samples. Given its simplicity and compatibility with widely available Raman setups, this approach offers a practical solution for characterizing BP orientation without requiring advanced structural characterization techniques.

cond-mat.mes-hall↗

arXiv2024

High-quality hexagonal boron nitride selectively grown on patterned epigraphene by MOVPE

Hexagonal boron nitride encapsulation is the method of choice for protecting graphene from environmental doping and impurity scattering. It was previously demonstrated that metal-organic vapor phase epitaxy (MOVPE) grows epitaxially ordered, uniform BN layers on epigraphene (graphene grown on SiC). Due to graphene non-wetting properties, h-BN growth starts preferentially from the graphene ledges. We use this fact here to selectively promote growth of high-quality flat h-BN on epigraphene by patterning epigraphene microstructures prior to BN growth. Thin h-BN films (down to 6 nm) grown by MOVPE show smooth and pleated surface morphology on epigraphene, while crumpled BN is observed on the SiC. Cross-sectional high-resolution transmission electron microscopy images and fluorescence imaging confirm the higher BN quality grown on the epigraphene. Transport measurements reveal p-doping as expected from hydrogen intercalation of epigraphene and regions of high and low mobility. This method can be used to produce structurally uniform high-quality h-BN/epigraphene micro/nano scale heterostructure.

cond-mat.mtrl-sci↗

arXiv2024

Benchmarking the integration of hexagonal boron nitride crystals and thin films into graphene-based van der Waals heterostructures

We present a benchmarking protocol that combines the characterization of boron nitride (BN) crystals and films with the evaluation of the electronic properties of graphene on these substrates. Our study includes hBN crystals grown under different conditions and scalable BN films deposited by either chemical or physical vapor deposition (CVD or PVD). We explore the complete process from boron nitride growth, over its optical characterization by time-resolved cathodoluminescence (TRCL), to the optical and electronic characterization of graphene by Raman spectroscopy after encapsulation and Hall bar processing. Within our benchmarking protocol we achieve a homogeneous electronic performance within each Hall bar device through a fast and reproducible processing routine. We find that a free exciton lifetime of 1 ns measured on as-grown hBN crystals by TRCL is sufficient to achieve high graphene room temperature charge carrier mobilities of 80,000 cm$^2$/(Vs) at a carrier density of |n| = 10$^{12}$ cm$^{-2}$, while respective exciton lifetimes around 100 ps yield mobilities up to 30,000 cm$^2$/(Vs). For scalable PVD-grown BN films, we measure carrier mobilities exceeding 10,000 cm$^2$/(Vs) which correlates with a graphene Raman 2D peak linewidth of 22 cm$^{-1}$. Our work highlights the importance of the Raman 2D linewidth of graphene as a critical metric that effectively assesses the interface quality (i.e. surface roughness) to the BN substrate, which directly affects the charge carrier mobility of graphene. Graphene 2D linewidth analysis is suitable for all BN substrates and is particularly advantageous when TRCL or BN Raman spectroscopy cannot be applied to specific BN materials such as amorphous or thin films. This underlines the superior role of spatially-resolved spectroscopy in the evaluation of BN crystals and films for the use of high-mobility graphene devices.

cond-mat.mtrl-sci↗

arXiv2024

Exciton self-trapping in twisted hexagonal boron nitride homostructures

One of the main interests of 2D materials is their ability to be assembled with many degrees of freedom for tuning and manipulating excitonic properties. There is a need to understand how the structure of the interfaces between atomic layers influences exciton properties. Here we use cathodoluminescence and time-resolved cathodoluminescence experiments to study how excitons interact with the interface between two twisted hexagonal boron nitride (hBN) crystals with various angles. An efficient capture of free excitons by the interface is demonstrated, which leads to a population of long-lived and interface-localized (2D) excitons. Temperature dependent experiments indicate that for high twist angles, these excitons localized at the interface further undergo a selftrapping. It consists in a distortion of the lattice around the exciton on which the exciton traps itself. Our results suggest that this exciton-interface interaction causes the broad 4-eV optical emission of highly twisted hBN-hBN structures. Exciton self-trapping is finally discussed as a common feature of sp2 hybridized boron nitride polytypes and nanostructures due to the ionic nature of the B-N bond and the small size of their excitons.

cond-mat.mtrl-sci↗

arXiv2023

Surface recombination and out of plane diffusivity of free excitons in hexagonal boron nitride

We present a novel experimental protocol using Cathodoluminescence measurements as a function of the electron incident energy to study both exciton diffusion in a directional way and surface exciton recombination. Our approach overcomes the challenges of anisotropic diffusion and the limited applicability of existing methods to the bulk counterparts of 2D materials. The protocol is then applied at room and at cryogenic temperatures to four bulk hexagonal boron nitride crystals grown by different synthesis routes. The exciton diffusivity depends on the sample quality but not on the temperature, indicating it is limited by defect scattering even in the best quality crystals. The lower limit for the diffusivity by phonon scattering is 0.2 cm$^{2}$.s$^{-1}$. Diffusion lengths were as much as 570 nm. Finally, the surface recombination velocity exceeds 10$^{5}$ cm$^{2}$.s$^{-1}$, at a level similar to silicon or diamond. This result reveals that surface recombination could strongly limit light-emitting devices based on 2D materials.

cond-mat.mtrl-sci↗

arXiv2023

Distinguishing different stackings in layered materials via luminescence spectroscopy

Despite its simple crystal structure, layered boron nitride features a surprisingly complex variety of phonon-assisted luminescence peaks. We present a combined experimental and theoretical study on ultraviolet-light emission in hexagonal and rhombohedral bulk boron nitride crystals. Emission spectra of high-quality samples are measured via cathodoluminescence spectroscopy, displaying characteristic differences between the two polytypes. These differences are explained using a fully first-principles computational technique that takes into account radiative emission from ``indirect'', finite-momentum, excitons via coupling to finite-momentum phonons. We show that the differences in peak positions, number of peaks and relative intensities can be qualitatively and quantitatively explained, once a full integration over all relevant momenta of excitons and phonons is performed.

cond-mat.mtrl-sci↗

arXiv2022

Quantum well confinement and competitive radiative pathways in the luminescence of black phosphorus layers

Black phosphorus (BP) stands out from other 2D materials by the wide amplitude of the band-gap energy (Delta(Eg)) that sweeps an optical window from Visible (VIS) to Infrared (IR) wavelengths, depending on the layer thickness. This singularity made the optical and excitonic properties of BP difficult to map. Specifically, the literature lacks in presenting experimental and theoretical data on the optical properties of BP on an extended thickness range. Here we report the study of an ensemble of photoluminescence spectra from 79 passivated BP flakes recorded at 4 K with thicknesses ranging from 4 nm to 700 nm, obtained by mechanical exfoliation. We observe that the exfoliation steps induce additional defects states that compete the radiative recombination from bound excitons observed in the crystal. We also show that the evolution of the photoluminescence energy versus thickness follows a quantum well confinement model appreciable from a thickness predicted and probed at 25 nm. The BP slabs placed in different 2D heterostructures show that the emission energy is not significantly modulated by the dielectric environment. Introduction Confinement effects

cond-mat.mes-hall↗

arXiv2022

Colloidal Synthesis of Nanoparticles: from Bimetallic to High Entropy Alloys

At the nanometric scale, the synthesis of a random alloy (i.e. without phase segregation, whatever the composition) by chemical synthesis remains a not easy task, even for simple binary type systems. In this context, a unique approach based on the colloidal route is proposed enabling the synthesis of face-centred cubic and monodisperse bimetallic, trimetallic, tetrametallic and pentametallic nanoparticles with diameters around 5 nm as solid solutions. The Fe-Co-Ni-Pt-Ru alloy and its subsets are considered which is a challenging task as each element has fairly different physico-chemical properties. Nanoparticles are prepared by temperature-assisted co-reduction of metal acetylacetonate precursors in the presence of surfactants. It is highlighted how the correlation between precursors' degradation temperatures and reduction potentials values of the metal cations is the driving force to achieve a homogenous distribution of all elements within the nanoparticles.

cond-mat.mtrl-sci↗

arXiv2022

From the synthesis of hBN crystals to their use as nanosheets for optoelectronic devices

In the wide world of 2D materials, hexagonal boron nitride (hBN) holds a special place due to its excellent characteristics. In addition to its thermal, chemical and mechanical stability, hBN demonstrates high thermal conductivity, low compressibility, and wide band gap around 6 eV, making it promising candidate for many groundbreaking applications and more specifically for optoelectronic devices. Millimeters scale hexagonal boron nitride crystals are obtained through a disruptive dual method (PDC/PCS) consisting in a complementary coupling of the Polymer Derived Ceramics route and a Pressure-Controlled Sintering process. In addition to their excellent chemical and crystalline quality, these crystals exhibit a free exciton lifetime of 0.43 ns, as determined by time-resolved cathodoluminescence measurements, confirming their interesting optical properties. To go further in applicative fields, hBN crystals are then exfoliated, and resulting Boron Nitride NanoSheets (BNNSs) are used to encapsulate transition metal dichalcogenides (TMDs). Such van der Waals heterostructures are tested by optical spectroscopy. BNNSs do not luminesce in the emission spectral range of TMDs and the photoluminescence width of the exciton at 4K is in the range 2-3 meV. All these results demonstrate that these BNNSs are relevant for future opto-electronic applications.

cond-mat.mtrl-sci↗

arXiv2021

Ultrasonication-Induced Extraction of Inner Shells from Double-Wall Carbon Nanotubes Characterized via In Situ Spectroscopy after Density Gradient Ultracentrifugation

Even though ultrasonication is considered to be an effective method to disperse carbon nanotubes (CNTs), its devastating effects on the nanotubes are often neglected. Here, even mild ultrasonication is found to rapidly extract the inner single-wall CNTs (SWCNTs) from the outer shells of the double-wall CNTs (DWCNTs). As-synthesized DWCNTs are gently solubilized in a surfactant solution, strictly avoiding any ultrasonication, followed by two consecutive density gradient ultracentrifugation (DGU) steps to obtain a purified colloidal solution of isolated DWCNTs. The latter is carefully selected based on in situ resonant Raman (RRS) and fluorescence (PL) spectroscopy, measured as a function of depth directly in the ultracentrifuge tube after DGU. These purified DWCNTs are ultrasonicated in successive time steps while intermittently probing the sample via RRS and PL spectroscopy. These results unravel the very fast increasing yet saturating extraction mechanism that leads to the formation of fluorescing SWCNTs. A statistical high-resolution transmission electron microscopy study confirms the drastic increase in SWCNTs after ultrasonication, and evidences that ultrasonication forms SWCNTs from both the inner and outer shells of the DWCNTs. This study demonstrates how easily ultrasonication extracts SWCNTs from individually solubilized DWCNTs, unavoidably complicating any further spectroscopic studies on DWCNTs severely.

cond-mat.mes-hall↗

arXiv2021

Radiative lifetime of free excitons in hexagonal boron nitride

Using a new time-resolved cathodoluminescence system dedicated to the UV spectral range, we present a first estimate of the radiative lifetime of free excitons in hBN at room temperature. This is carried out from a single experiment giving both the absolute luminescence intensity under continuous excitation and the decay time of free excitons in the time domain. The radiative lifetime of indirect excitons in hBN is equal to 27 ns, which is much shorter than in other indirect bandgap semiconductors. This is explained by the close proximity of the electron and the hole in the exciton complex, and also by the small energy difference between indirect and direct excitons. The unusually high luminescence efficiency of hBN for an indirect bandgap is therefore semi-quantitatively understood.

cond-mat.mtrl-sci↗

arXiv2020

Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition

Realizing high-performance nanoelectronics requires control of materials at the nanoscale. Methods to produce high quality epitaxial graphene (EG) nanostructures on silicon carbide are known. The next step is to grow Van der Waals semiconductors on top of EG nanostructures. Hexagonal boron nitride (h-BN) is a wide bandgap semiconductor with a honeycomb lattice structure that matches that of graphene, making it ideally suited for graphene-based nanoelectronics. Here, we describe the preparation and characterization of multilayer h-BN grown epitaxially on EG using a migration-enhanced metalorganic vapor phase epitaxy process. As a result of the lateral epitaxial deposition (LED) mechanism, the grown h-BN/EG heterostructures have highly ordered epitaxial interfaces, as desired in order to preserve the transport properties of pristine graphene. Atomic scale structural and energetic details of the observed row-by-row, growth mechanism of the 2D epitaxial h-BN film are analyzed through first-principles simulations, demonstrating one-dimensional nucleation-free-energy-barrierless growth. This industrially relevant LED process can be applied to a wide variety of van der Waals materials.

cond-mat.mtrl-sci↗

arXiv2020

Excitons in bulk black phosphorus evidenced by photoluminescence at low temperature

Atomic layers of Black Phosphorus (BP) present unique opto-electronic properties dominated by a direct tunable bandgap in a wide spectral range from visible to mid-infrared. In this work, we investigate the infrared photoluminescence of BP single crystals at very low temperature. Near-bandedge recombinations are observed at 2 K, including dominant excitonic transitions at 0.276 eV and a weaker one at 0.278 eV. The free-exciton binding energy is calculated with an anisotropic Wannier-Mott model and found equal to 9.1 meV. On the contrary, the PL intensity quenching of the 0.276 eV peak at high temperature is found with a much smaller activation energy, attributed to the localization of free excitons on a shallow impurity. This analysis leads us to attribute respectively the 0.276 eV and 0.278 eV PL lines to bound excitons and free excitons in BP. As a result, the value of bulk BP bandgap is refined to 0.287 eV at 2K.

cond-mat.mes-hall↗

arXiv2020

Assessing the reliability of the Raman peak counting method for the characterization of SWCNT diameter distributions: a cross-characterization with TEM

Resonant Raman spectroscopy is a widely used technique for single-walled carbon nanotube (SWCNT) characterization, in particular in the radial breathing mode (RBM) range which provides direct information on the structure of the nanotube in resonance. The RBM peak counting method, i.e. acquiring Raman spectrum grids on a substrate with a select set of discrete laser lines and counting RBM peaks as single nanotubes, is frequently used to characterize SWCNT growth samples, despite the many factors that can induce errors in the results. In this work, we cross-characterize the diameter distributions obtained through this methodology with diameter distributions obtained by counting SWCNT diameters in transmission electron microscopy (TEM) and discuss the different results and biases between the techniques. This study is performed on a broad diameter distribution sample, and on two chirality-enriched samples whose chirality distributions are determined by photoluminescence excitation spectroscopy (PLE) and statistical analysis of high resolution TEM (HRTEM) images. We show that the largest differences between the Raman peak counting and TEM diameter distributions stem from the chirality-dependence of SWCNT Raman cross-sections and the patchy vision offered by the use of only a few discrete excitation wavelengths. The effect of the substrate and TEM-related biases are also discussed.

cond-mat.mes-hall↗

arXiv2019

Exciton-exciton annihilation in hBN

Known as a prominent recombination path at high excitation densities, exciton-exciton annihilation (EEA) is evidenced in bulk hexagonal boron nitride (hBN) by cathodoluminescence at low temperature. Thanks to a careful tune of the the exciton density by varying either the current or the focus of the incident electron beam, we could estimate an EEA rate of 2$\times$10$^{-6}$ cm$^{3}$.s$^{-1}$ at $T=10$ K, the highest reported so far for a bulk semiconductor. Expected to be even stronger in nanotubes or atomic layers, EEA probablly contributes to the luminescence quenching observed in low-dimensionality BN materials.

cond-mat.mes-hall↗

arXiv2019

Bright luminescence from indirect and strongly bound excitons in hBN

A quantitative analysis of the excitonic luminescence efficiency in hexagonal boron nitride (hBN) is carried out by cathodoluminescence in the ultraviolet range and compared with zinc oxide and diamond single crystals. A high quantum yield value of ~50% is found for hBN at 10 K comparable to that of direct bandgap semiconductors. This bright luminescence at 215 nm remains stable up to room temperature, evidencing the strongly bound character of excitons in bulk hBN. Ab initio calculations of the exciton dispersion confirm the indirect nature of the lowest-energy exciton whose binding energy is found equal to 300 meV, in agreement with the thermal stability observed in luminescence. The direct exciton is found at a higher energy but very close to the indirect one, which solves the long debated Stokes shift in bulk hBN.

cond-mat.mtrl-sci↗

arXiv2018

Tuning bimetallic catalysts for a selective growth of SWCNTs

Recent advances in structural control during the synthesis of SWCNTs have in common the use of bimetallic nanoparticles as catalysts, despite the fact that their exact role is not fully understood. We therefore analyze the effect of the catalyst' s chemical composition on the structure of the resulting SWCNTs by comparing three bimetallic catalysts (FeRu, CoRu and NiRu). A specific synthesis protocol is designed to impede the catalyst nanoparticle coalescence mechanisms and stabilize their diameter distributions throughout the growth. Owing to the ruthenium component which has a limited carbon solubility, tubes grow in tangential mode and their diameter is close to that of their seeding nanoparticle. By using as-synthesized SWCNTs as a channel material in field effect transistors, we show how the chemical composition of the catalysts and temperature can be used as parameters to tune the diameter distribution and semiconducting-to-metallic ratio of SWCNT samples. Finally, a phenomenological model, based on the dependence of the carbon solubility as a function of catalyst nanoparticle size and nature of the alloying elements, is proposed to interpret the results.

physics.app-ph↗