arXiv subjects

Annie G. Wang

Publications and source records attributed to Annie G. Wang.

7 recordsLinked to original sources

arXiv2026

Interface-Confined Superconductivity with Thickness-Independent Superfluid Stiffness in (Pb,Sn)Te/FeTe Bilayers

Interface-induced superconductivity in FeTe-based heterostructures provides a promising route toward topological superconductivity, yet the roles of the neighboring layers topology, symmetry, and electronic structure remain unresolved. In this work, we employ molecular beam epitaxy to grow Pb1-xSnxTe/FeTe bilayers and use angle-resolved photoemission spectroscopy to track the evolution of the Pb1-xSnxTe layer from a trivial insulator to a topological crystalline insulator hosting multiple Dirac surface states. Electrical transport measurements reveal robust superconductivity throughout the entire composition range, with a nearly constant superconducting transition temperature of ~12 K despite substantial changes in the electronic structure and topology of Pb1-xSnxTe. Double-coil mutual-inductance measurements further reveal comparable superfluid stiffness across the topological phase transition and nearly thickness-independent superfluid stiffness despite large variations in the constituent-layer thicknesses, demonstrating that superconductivity is confined near the interface. These results establish that superconductivity in FeTe-based heterostructures is largely insensitive to the topology, crystal symmetry, and detailed electronic structure of the neighboring layer, supporting a primary origin in modifications to the FeTe layer. The coexistence of interface-confined superconductivity and tunable multiple Dirac surface states in Pb1-xSnxTe/FeTe bilayers provides a versatile platform for exploring topological superconductivity and interactions among multiple Majorana zero modes.

cond-mat.supr-con↗

arXiv2025

Boundary-Bulk Interplay in Nonlinear Topological Transport

Nonlinear transport has emerged as a powerful approach to probe the quantum geometry of electronic wavefunctions, such as Berry curvature and quantum metric, in topological materials. While nonlinear responses governed by bulk quantum geometry and band topology are well understood, the role of boundary modes (e.g., edge, surface, and hinge states) in nonlinear transport of topological materials remains largely unexplored. In this work, we demonstrate boundary-bulk interplay in nonlinear transport, including second-harmonic Hall and nonreciprocal longitudinal responses, in molecular beam epitaxy-grown magnetic topological insulator heterostructures. We find that the nonlinear transport is maximized when the sample is tuned slightly away from the well-quantized states, including the quantum anomalous Hall and axion insulator states. The sign and amplitude of the nonlinear transport depend on electrode configuration, magnetic order, and carrier type, establishing boundary mode transport as the dominant contributor. These findings, supported by symmetry analysis and nonlinear Landauer-Büttiker formalism, demonstrate that nonlinear transport in topological materials is governed by the interplay between boundary and bulk states. We further derive a universal relation between different lead voltages from electrode geometry symmetry, which allows us to distinguish nonlinear boundary transport from bulk contributions. Our work highlights the critical role of electrodes in nonlinear transport, which is absent in nonlinear optics, and establishes boundary modes as a key origin of the giant nonlinear response in nearly bulk-insulating topological materials. This insight opens new opportunities for engineering nonlinear transport through boundary-bulk interplay in future device applications of topological materials.

cond-mat.mes-hall↗

arXiv2025

Meissner Effect and Nonreciprocal Charge Transport in Non-Topological 1T-CrTe2/FeTe Heterostructures

Interface-induced superconductivity has recently been achieved by stacking a magnetic topological insulator layer on an antiferromagnetic FeTe layer. However, the mechanism driving this emergent superconductivity remains unclear. Here, we employ molecular beam epitaxy to grow a 1T-CrTe2 layer, a two-dimensional ferromagnet with a Curie temperature up to room temperature, on a FeTe layer. These 1T-CrTe2/FeTe heterostructures show superconductivity with a critical temperature of ~12 K. Through magnetic force microscopy measurements, we observe the Meissner effect on the surface of the 1T-CrTe2 layer. Our electrical transport measurements reveal that the 1T-CrTe2/FeTe heterostructures exhibit nonreciprocal charge transport behavior, characterized by a large magneto-chiral anisotropy coefficient. The enhanced nonreciprocal charge transport in 1T-CrTe2/FeTe heterostructures provides a promising platform for exploring the magnetically controllable superconducting diode effect.

cond-mat.supr-con↗

arXiv2025

Gate-Tunable Ambipolar Josephson Current in a Topological Insulator

Dirac surface states in a topological insulator (TI) with proximity-induced superconductivity offer a promising platform for realizing topological superconductivity and Majorana physics. However, in TIs, the Josephson effect is usually observed in regimes where transport is dominated by either substantial bulk conduction channels or unipolar surface states. In this work, we demonstrate gate-tunable ambipolar Josephson current in lateral Josephson junction (JJ) devices based on bulk-insulating (Bi,Sb)2Te3 thin films grown by molecular beam epitaxy (MBE). For thinner films, the supercurrent exhibits pronounced gate-tunable ambipolar behavior and is significantly suppressed as the chemical potential approaches the Dirac point, yet persists across it. In contrast, thicker films exhibit a much weaker ambipolar response. Moreover, we find that the supercurrent becomes significantly less resilient to external magnetic fields when the chemical potential is tuned near the Dirac point in both thickness regimes. Our numerical simulations demonstrate the ambipolar behavior of these TI JJ devices and attribute the asymmetric supercurrent observed in thicker TI films to the coexistence of Dirac surface states and bulk conduction channels. The demonstration of gate-tunable ambipolar Josephson transport in MBE-grown TI films paves the way for realizing Dirac-surface-state-mediated topological superconductivity and establishes a foundation for future exploration of electrically tunable Majorana modes.

cond-mat.mes-hall↗

arXiv2025

Orbital Hybridization-Induced Ising-Type Superconductivity in a Confined Gallium Layer

In low-dimensional superconductors, the interplay between quantum confinement and interfacial hybridization effects can reshape Cooper pair wavefunctions and induce novel forms of unconventional superconductivity. In this work, we employ a plasma-free, carbon buffer layer-assisted confinement epitaxy method to synthesize trilayer gallium (Ga) sandwiched between a graphene layer and a 6H-SiC(0001) substrate, forming an air-stable graphene/trilayer Ga/SiC heterostructure. In this confined light-element Ga layer, we demonstrate interfacial Ising-type superconductivity driven by atomic orbital hybridization between the Ga layer and the SiC substrate. Electrical transport measurements reveal that the in-plane upper critical magnetic field u0Hc2,|| reaches ~21.98T at T=400 mK, approximately 3.38 times the Pauli paramagnetic limit (~6.51T). Angle-resolved photoemission spectroscopy (ARPES) measurements combined with theoretical calculations confirm the presence of split Fermi surfaces with Ising-type spin textures at the K and K' valleys of the confined Ga layer strongly hybridized with SiC. Moreover, by incorporating finite relaxation time induced by impurity scattering into an Ising-type superconductivity model, we reproduce the entire temperature-dependent u0Hc2,|| phase diagram. This work establishes a new strategy to realize unconventional pairing wavefunctions by combining quantum confinement and interfacial hybridization effects in superconducting thin films. It also opens new avenues for designing scalable superconducting quantum electronic and spintronic devices through interfacial engineering.

cond-mat.mes-hall↗

arXiv2024

Coexistence of Superconductivity and Antiferromagnetism in Topological Magnet MnBi2Te4 Films

The interface of two materials can harbor unexpected emergent phenomena. One example is interface-induced superconductivity. In this work, we employ molecular beam epitaxy to grow a series of heterostructures formed by stacking together two non-superconducting antiferromagnetic materials, an intrinsic antiferromagnetic topological insulator MnBi2Te4 and an antiferromagnetic iron chalcogenide FeTe. Our electrical transport measurements reveal interface-induced superconductivity in these heterostructures. By performing scanning tunneling microscopy and spectroscopy measurements, we observe a proximity-induced superconducting gap on the top surface of the MnBi2Te4 layer, confirming the interaction between superconductivity and antiferromagnetism in the MnBi2Te4 layer. Our findings will advance the fundamental inquiries into the topological superconducting phase in hybrid devices and provide a promising platform for the exploration of chiral Majorana physics in MnBi2Te4-based heterostructures.

cond-mat.supr-con↗

arXiv2024

Engineering Plateau Phase Transition in Quantum Anomalous Hall Multilayers

The plateau phase transition in quantum anomalous Hall (QAH) insulators corresponds to a quantum state wherein a single magnetic domain gives way to multiple magnetic domains and then re-converges back to a single magnetic domain. The layer structure of the sample provides an external knob for adjusting the Chern number C of the QAH insulators. Here, we employ molecular beam epitaxy (MBE) to grow magnetic topological insulator (TI) multilayers with an asymmetric layer structure and realize the magnetic field-driven plateau phase transition between two QAH states with odd Chern number change ΔC. In multilayer structures with C=+-1 and C=+-2 QAH states, we find two characteristic power-law behaviors between temperature and the scaling variables on the magnetic field at transition points. The critical exponents extracted for the plateau phase transitions with ΔC=1 and ΔC=3 in QAH insulators are found to be nearly identical, specifically, k1~0.390+-0.021 and k2~0.388+-0.015, respectively. We construct a four-layer Chalker-Coddington network model to understand the consistent critical exponents for the plateau phase transitions with ΔC=1 and ΔC=3. This work will motivate further investigations into the critical behaviors of plateau phase transitions with different ΔC in QAH insulators and provide new opportunities for the development of QAH chiral edge current-based electronic and spintronic devices.

cond-mat.mes-hall↗